Electronic Structures of Oxo-Metal Ions
- ️Sat Jan 01 2011
Abstract
The dianionic oxo ligand occupies a very special place in coordination chemistry, owing to its ability to donate π electrons to stabilize high oxidation states of metals. The ligand field theory of multiple bonding in oxo-metal ions, which was formulated in Copenhagen 50 years ago, predicts that there must be an “oxo wall” between Fe–Ru–Os and Co–Rh–Ir in the periodic table. In this tribute to Carl Ballhausen, we review this early work as well as new developments in the field. In particular, we discuss the electronic structures of beyond-the-wall (groups 9 and 10) complexes containing metals multiply bonded to O- and N-donor ligands.
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Notes
- 1.
IUPAC defined a radical as a group of atoms which occurs repeatedly in a number of different compounds.
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Acknowledgments
We dedicate this paper to the memory of Carl Ballhausen, a great scientist and a dear friend (Fig. 5). We note in closing that the B&G model is providing a firm foundation for structure/reactivity correlations in our current work on oxo-metal complexes [oxidative enzymes P450 and nitric oxide synthase (NIH DK019038, GM068461); water oxidation catalysts (NSF CCI Solar Program, CHE-0947829); and trans-dioxo osmium(VI) electrochemistry and photochemistry (BP)]. We thank the Gordon and Betty Moore Foundation and the Arnold and Mabel Beckman Foundation for support of our research programs.
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Beckman Institute, California Institute of Technology, Pasadena, CA, 91125, USA
Jay R. Winkler & Harry B. Gray
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Correspondence to Harry B. Gray .
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St. Edmund Hall, Oxford, OX1 4AR, United Kingdom
David Michael P. Mingos
The Royal Institution of Great Britain, Albermarle Street 21, London, W1X 4BS, United Kingdom
Peter Day
Technical University of Denmark, Copenhagen, Denmark
Jens Peder Dahl
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Winkler, J.R., Gray, H.B. (2011). Electronic Structures of Oxo-Metal Ions. In: Mingos, D., Day, P., Dahl, J. (eds) Molecular Electronic Structures of Transition Metal Complexes I. Structure and Bonding, vol 142. Springer, Berlin, Heidelberg. https://doi.org/10.1007/430_2011_55
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DOI: https://doi.org/10.1007/430_2011_55
Published: 06 October 2011
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-27369-8
Online ISBN: 978-3-642-27370-4
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