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Aluminium indium arsenide, the Glossary

Index Aluminium indium arsenide

Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a ternary III-V semiconductor compound with very nearly the same lattice constant as InGaAs, but a larger bandgap.[1]

Table of Contents

  1. 17 relations: Aluminium, Aluminium arsenide, Arsenic, Arsine, Band gap, Cubic crystal system, Gallium arsenide, High-electron-mobility transistor, Indium, Indium arsenide, Indium gallium arsenide, Lattice constant, List of semiconductor materials, Metalorganic vapour-phase epitaxy, Quantum well, Quantum-cascade laser, Trimethylindium.

  2. Arsenides
  3. III-V compounds
  4. III-V semiconductors
  5. Zincblende crystal structure

Aluminium

Aluminium (Aluminum in North American English) is a chemical element; it has symbol Al and atomic number 13.

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Aluminium arsenide

Aluminium arsenide is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. Aluminium indium arsenide and aluminium arsenide are aluminium compounds, arsenides, III-V compounds, III-V semiconductors and Zincblende crystal structure.

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Arsenic

Arsenic is a chemical element with the symbol As and the atomic number 33.

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Arsine

Arsine (IUPAC name: arsane) is an inorganic compound with the formula AsH3.

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Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist.

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Cubic crystal system

In crystallography, the cubic (or isometric) crystal system is a crystal system where the unit cell is in the shape of a cube.

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Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Aluminium indium arsenide and Gallium arsenide are arsenides, III-V compounds, III-V semiconductors and Zincblende crystal structure.

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High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).

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Indium

Indium is a chemical element; it has symbol In and atomic number 49.

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Indium arsenide

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. Aluminium indium arsenide and indium arsenide are arsenides, III-V compounds, III-V semiconductors, indium compounds and Zincblende crystal structure.

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Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Aluminium indium arsenide and indium gallium arsenide are arsenides, III-V compounds, III-V semiconductors and indium compounds.

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Lattice constant

A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal.

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List of semiconductor materials

Semiconductor materials are nominally small band gap insulators.

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Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films.

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Quantum well

A quantum well is a potential well with only discrete energy values.

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Quantum-cascade laser

Quantum-cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jérôme Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.

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Trimethylindium

Trimethylindium, often abbreviated to TMI or TMIn, is the organoindium compound with the formula In(CH3)3. Aluminium indium arsenide and Trimethylindium are indium compounds.

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See also

Arsenides

III-V compounds

III-V semiconductors

Zincblende crystal structure

References

[1] https://en.wikipedia.org/wiki/Aluminium_indium_arsenide

Also known as AlInAs, Aluminum indium arsenide, InAlAs.