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AU2001263347A1 - Burst architecture for a flash memory - Google Patents

  • ️Tue Dec 11 2001

AU2001263347A1 - Burst architecture for a flash memory - Google Patents

Burst architecture for a flash memory

Info

Publication number
AU2001263347A1
AU2001263347A1 AU2001263347A AU6334701A AU2001263347A1 AU 2001263347 A1 AU2001263347 A1 AU 2001263347A1 AU 2001263347 A AU2001263347 A AU 2001263347A AU 6334701 A AU6334701 A AU 6334701A AU 2001263347 A1 AU2001263347 A1 AU 2001263347A1 Authority
AU
Australia
Prior art keywords
data
circuit
data word
data words
signal
Prior art date
2000-05-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001263347A
Inventor
Takao Akaogi
Lee Cleveland
Kendra Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Advanced Micro Devices Inc
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
2000-05-31
Filing date
2001-05-21
Publication date
2001-12-11
2001-05-21 Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
2001-12-11 Publication of AU2001263347A1 publication Critical patent/AU2001263347A1/en
Status Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

Landscapes

  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

A burst mode architecture to provide burst mode access to a plurality of data words in a flash memory is described. The burst mode architecture includes a first circuit, a control circuit coupled to the first circuit, and a data buffer selectively coupled to the first circuit by the control circuit. The first circuit accesses a plurality of data words, beginning with an initial access of a first data word and a second data word. The control circuit generates a timing signal having pulses and a second signal. The second signal is generated upon completion of the initial access of the first data word and the second data word. The first circuit follows the initial access with subsequent accesses of the plurality of data words responsively to the second signal and the timing signal. The data buffer has an output and produces the first data word at the output and successively produces, with each successive pulse of the timing signal following an initial period of time, the second data word, and subsequent data words at the output. The subsequent data words correspond to the subsequent accesses of the plurality of data words.

AU2001263347A 2000-05-31 2001-05-21 Burst architecture for a flash memory Abandoned AU2001263347A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20865200P 2000-05-31 2000-05-31
US60208652 2000-05-31
US09829518 2001-04-09
US09/829,518 US6621761B2 (en) 2000-05-31 2001-04-09 Burst architecture for a flash memory
PCT/US2001/016426 WO2001093272A2 (en) 2000-05-31 2001-05-21 Burst architecture for a flash memory

Publications (1)

Publication Number Publication Date
AU2001263347A1 true AU2001263347A1 (en) 2001-12-11

Family

ID=26903366

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001263347A Abandoned AU2001263347A1 (en) 2000-05-31 2001-05-21 Burst architecture for a flash memory

Country Status (11)

Country Link
US (1) US6621761B2 (en)
EP (1) EP1295294B1 (en)
JP (1) JP4737917B2 (en)
KR (1) KR100717412B1 (en)
CN (2) CN100552806C (en)
AT (1) ATE287119T1 (en)
AU (1) AU2001263347A1 (en)
BR (1) BR0111303A (en)
DE (1) DE60108388T2 (en)
TW (1) TW507212B (en)
WO (1) WO2001093272A2 (en)

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GB0122401D0 (en) * 2001-09-17 2001-11-07 Ttp Communications Ltd Interfacing processors with external memory
JP2003223792A (en) * 2002-01-25 2003-08-08 Hitachi Ltd Nonvolatile memory and memory card
ITVA20020016A1 (en) * 2002-02-21 2003-08-21 St Microelectronics Srl WRITING METHOD OF A SET OF BYTES OF DATA IN A STANDARD MEMORY AND RELATED MEMORY DEVICE
JP4469649B2 (en) * 2003-09-17 2010-05-26 株式会社ルネサステクノロジ Semiconductor flash memory
US6973003B1 (en) 2003-10-01 2005-12-06 Advanced Micro Devices, Inc. Memory device and method
JP4708723B2 (en) * 2004-03-30 2011-06-22 ルネサスエレクトロニクス株式会社 Semiconductor memory device
KR100598114B1 (en) * 2005-01-25 2006-07-10 삼성전자주식회사 Semiconductor memory device performing page mode operation
CN101458960B (en) * 2007-12-13 2011-12-07 中芯国际集成电路制造(上海)有限公司 Capacity overlapping memory and control method therefor
KR100915824B1 (en) * 2008-01-07 2009-09-07 주식회사 하이닉스반도체 Input circuit of semiconductor memory device and its control method
KR100935593B1 (en) 2008-02-12 2010-01-07 주식회사 하이닉스반도체 Nonvolatile Memory Devices Controlling Page Buffers
US8285917B2 (en) * 2009-03-26 2012-10-09 Scaleo Chip Apparatus for enhancing flash memory access
CN113409870A (en) * 2021-06-30 2021-09-17 芯天下技术股份有限公司 Flash memory erasing method, sector selection circuit, device and electronic equipment
US12111781B2 (en) * 2022-03-11 2024-10-08 Micron Technology, Inc. Data burst suspend mode using multi-level signaling

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (en) * 1992-10-02 1996-03-14 삼성전자주식회사 Semiconductor memory device
US5604884A (en) * 1993-03-22 1997-02-18 Compaq Computer Corporation Burst SRAMS for use with a high speed clock
US5696917A (en) * 1994-06-03 1997-12-09 Intel Corporation Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory
JP2904076B2 (en) * 1995-11-10 1999-06-14 日本電気株式会社 Semiconductor storage device
KR100218734B1 (en) * 1996-05-06 1999-09-01 김영환 Method and device for generating internal pulse signal of synchronomic memory
JP3789173B2 (en) 1996-07-22 2006-06-21 Ｎｅｃエレクトロニクス株式会社 Semiconductor memory device and semiconductor memory device access method
JPH1139871A (en) * 1997-01-10 1999-02-12 Mitsubishi Electric Corp Synchronous semiconductor storage device
US5903496A (en) * 1997-06-25 1999-05-11 Intel Corporation Synchronous page-mode non-volatile memory with burst order circuitry
US5923615A (en) * 1998-04-17 1999-07-13 Motorlola Synchronous pipelined burst memory and method for operating same
US6216180B1 (en) * 1998-05-21 2001-04-10 Intel Corporation Method and apparatus for a nonvolatile memory interface for burst read operations
JP4060442B2 (en) * 1998-05-28 2008-03-12 富士通株式会社 Memory device
JP2000048586A (en) * 1998-07-30 2000-02-18 Fujitsu Ltd Nonvolatile semiconductor memory device
JP4043151B2 (en) * 1998-08-26 2008-02-06 富士通株式会社 High speed random accessible memory device
KR100359157B1 (en) * 1998-12-30 2003-01-24 주식회사 하이닉스반도체 Write command latency circuit and its control method
US6104667A (en) * 1999-07-29 2000-08-15 Fujitsu Limited Clock control circuit for generating an internal clock signal with one or more external clock cycles being blocked out and a synchronous flash memory device using the same
US6111787A (en) * 1999-10-19 2000-08-29 Advanced Micro Devices, Inc. Address transistion detect timing architecture for a simultaneous operation flash memory device
US6285585B1 (en) * 1999-10-19 2001-09-04 Advaned Micro Devices, Inc. Output switching implementation for a flash memory device
US6205084B1 (en) * 1999-12-20 2001-03-20 Fujitsu Limited Burst mode flash memory
US6314049B1 (en) * 2000-03-30 2001-11-06 Micron Technology, Inc. Elimination of precharge operation in synchronous flash memory
US6304510B1 (en) * 2000-08-31 2001-10-16 Micron Technology, Inc. Memory device address decoding

Also Published As

Publication number Publication date
WO2001093272A3 (en) 2002-03-28
US6621761B2 (en) 2003-09-16
WO2001093272A2 (en) 2001-12-06
JP2003535428A (en) 2003-11-25
EP1295294A2 (en) 2003-03-26
CN101345078B (en) 2013-04-10
JP4737917B2 (en) 2011-08-03
DE60108388D1 (en) 2005-02-17
US20020012278A1 (en) 2002-01-31
KR100717412B1 (en) 2007-05-11
ATE287119T1 (en) 2005-01-15
CN101345078A (en) 2009-01-14
TW507212B (en) 2002-10-21
CN1447972A (en) 2003-10-08
CN100552806C (en) 2009-10-21
BR0111303A (en) 2003-06-17
EP1295294B1 (en) 2005-01-12
KR20030014255A (en) 2003-02-15
DE60108388T2 (en) 2005-09-29

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