CN101839941A - signal sense amplifier - Google Patents
- ️Wed Sep 22 2010
CN101839941A - signal sense amplifier - Google Patents
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- CN101839941A CN101839941A CN 201010190431 CN201010190431A CN101839941A CN 101839941 A CN101839941 A CN 101839941A CN 201010190431 CN201010190431 CN 201010190431 CN 201010190431 A CN201010190431 A CN 201010190431A CN 101839941 A CN101839941 A CN 101839941A Authority
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Abstract
本发明公开了一种信号感测放大器,包括差分跨导输入电路、差分共源共栅转导放大电路和有源负载电路;差分跨导输入电路为一个具有对称结构能实现宽共模输入范围的电压到电流差分输入级;差分共源共栅转导放大电路包括相同类型和尺寸的晶体管M5和M6,CB3和CB4分别与M5与M6的源极连接并提供直流电流偏置。本发明提供了一种能优先支持CMOS工艺的宽共模输入,特别是能宽于供电电压轨的高速、高精度、低压、低功耗的感测放大器,该电路不受工艺、供电电压、温度(PVT)漂移的影响,既能作为比较器功能又能作为放大器功能来实现电流检测或感测电路。
The invention discloses a signal sensing amplifier, which comprises a differential transconductance input circuit, a differential cascode transconductance amplifying circuit and an active load circuit; the differential transconductance input circuit is a symmetrical structure capable of realizing a wide common-mode input range The voltage-to-current differential input stage; the differential cascode transconductance amplifier circuit includes transistors M 5 and M 6 of the same type and size, C B3 and C B4 are respectively connected to the sources of M 5 and M 6 and provide DC current bias. The present invention provides a wide common-mode input that can preferentially support CMOS technology, especially a high-speed, high-precision, low-voltage, low-power sense amplifier that can be wider than the power supply voltage rail. The circuit is not affected by technology, power supply voltage, The effect of temperature (PVT) drift can be implemented as either a comparator function or an amplifier function to implement a current sense or sense circuit.
Description
Affiliated technical field
The present invention relates to a kind of signal sensing amplifier, especially, a kind of low pressure, low-power consumption, common-mode input range can be widened the high speed sense amplifying circuits to the power supply supply voltage rail, and it is used for current status to power supply equipment current delivery passage and detects or the channel current size is carried out sensing.
Background technology
At present, in many consumer electronics, communication apparatus, the computer equipment power supply, often need carry out the direct current conversion process, to satisfy unequally loaded supply voltage demand.In these were used, typical converter was the DC-DC converter, and it has occupied a large amount of volume, power consumption and the costs of electronic equipment.Electronic equipment development in future trend is low pressure, low-power consumption, miniaturization and cost degradation, this just needs the design of DC-DC converter circuit towards low pressure, low-power consumption, high-level efficiency development, the switching frequency of DC-DC converter is towards high frequency development (switching frequency is that the DC-DC converter of ten order of megahertz is a development in future trend), and manufacture craft aspect court is the CMOS technological development cheaply.Transient response speed is fast, control is simple because current-control type DC-DC converter has, be easy to compensate, high-precision output voltage and inherent control and limitation capability to the power switch electric current, therefore the DC-DC converter adopts current control mode more, but in the face of electronic equipment development in future trend, as the necessary current detecting of Current Control or current sensing circuit in low pressure, low-power consumption, at a high speed, be subjected to great challenge aspect the high precision.
In current control mode, controller need be understood the control signal that could determine after the current status information of current channel power switch.This just need carry out the real-time sensing of size of current to current channel, or the channel current state is carried out current detecting (detecting as peak point current state-detection, valley point current state-detection or zero current condition).For the sensing of size of current, its output waveform is passage waveform voltage or the current waveform behind the constant convergent-divergent in proportion.And to the detection of current status, its output waveform is a digital level, and detected waveform is corresponding digital level state with regard to saltus step after sensed current reaches predefined thresholding.
With CMOS technology cheaply is example, and theoretically, current detecting or sensing circuit have signal input and source signal to import dual mode.It is narrow to adopt the structure of grid input signal to be subject to common-mode input range, can not effectively operate in beyond its power supply supply voltage rail, its application scenario be limited in that common mode detects or sensing voltage at the supply voltage rail with interior or slightly wide occasion.Can better describe this situation by Fig. 1 a, described the traditional amplifier with folded common source and common grid structure in Fig. 1 a, this amplifier gain is higher, but its input common-mode range need guarantee to allow difference input pipe M 1, M 2Do not enter linear zone, must guarantee its current offset source C yet B2And C B3Operate as normal, thus make its common-mode input range have a upper limit, and the maximal value of its common-mode input range is:
V CM_MAX=V DD+V TH-V CB23 (1)
Wherein:
V DDIt is supply voltage;
V THBe differential pair tube M1, the threshold voltage of M2;
V CB23Be current source C B2And C B3The minimum voltage difference that its two ends need during operate as normal.
From formula (1) as can be seen, the highest input common mode voltage of this circuit is limited by the threshold voltage of its supply voltage, differential pair crystal and current source minimum operationg pressure differential.Aspect speed, the common source circuit can influence its response speed owing to the Miller phenomenon of differential pair tube mostly.
So operate in power supply supply voltage rail situation in addition for common mode detection or sensing voltage, generally use common gate mode by the source electrode input signal, though general common grid input method can produce the differential mode computing and circuit is simple, low in energy consumption, but the asymmetry of its structure, particularly under CMOS technology, make its performance be subjected to the influence of technology, supply voltage and temperature (PVT) drift serious, robustness is relatively poor, especially it is simple in structure, be difficult to improve its gain bandwidth product, cause its speed and precision limited.Can better describe this situation by Fig. 1 b, describe the both-end that adopts the source electrode input signal among Fig. 1 b and arrive single-ended differential mode amplifier, wherein M 1The employing diode connects, with V 1NSignal is coupled to M 2Grid and M 2Source signal V IPForm the differential mode computing, but because the asymmetry of this structure, on the one hand when this circuit when device uses as a comparison its threshold value to be subjected to the influence of PVT drift serious, on the other hand when this structure is used as amplifier, owing to M 2Drain electrode as output, make the direct current fluctuation of output voltage can cause M 1And M 2The dc point of drain voltage does not match, and this will worsen input offset voltage.And this structure output terminal equals M to the common mode admittance of input end 2Mutual conductance, cause its common-mode rejection ratio extremely low.Its gain characteristic is subject to M 2The highest-gain characteristic be M 2Self mutual conductance g m(M 2) divided by its source stray admittance g Ds(M 2), if will strengthen its gain or common-mode rejection ratio or M 1And M 2Match condition then need connect commonsource amplifier in back level, but like this can be because the Miller phenomenon that common source is introduced and seriously limit its bandwidth.
Summary of the invention
Drawback in view of prior art, the object of the present invention is to provide a kind of wide common-mode input range that can preferentially support CMOS technology, particularly can be wider than high speed, high precision, the low pressure of supply voltage rail, the sensing amplifier of low-power consumption, this circuit is not subjected to the influence of technology, supply voltage, temperature (PVT) drift, and the device function realizes that current detection circuit can realize current sensing circuit as the amplifier function again as a comparison.
Therefore, the technical scheme of sensing amplifier of the present invention comprises differential transconductance input circuit, difference cascode transduction amplifying circuit and active pull-up circuit as shown in Figure 2.Described differential transconductance input circuit is one and has voltage that symmetrical structure can realize wide common-mode input range to the current-differencing input stage, comprises (M 1, M 2) and (M of the generation difference current that constitutes 3, M 4) another of the generation difference current that constitutes, M 1~M 4Be the transistor of same type, wherein, M 1With M 4Measure-alike, M 2And M 3Measure-alike.And M 1And M 4All adopt diode to connect and respectively by C B1And C B2Provide the DC current biasing, M 1With M 3Source electrode (or emitter) link together, constitute an input end of differential input stage, M 4With M 2Source electrode (or emitter) link together, constitute another input end of differential input stage, M 2And M 3Drain electrode (or collector) link to each other with the next stage input end as the output terminal of difference current; Described difference cascode transduction amplifying circuit comprises the transistor M of same type and size 5And M 6, C B3And C B4Respectively with M 5And M 6Source electrode (or emitter) connect and DC current biasing be provided, this tie point is as the difference current input end of the corresponding levels, M 5And M 6Grid (or base stage) has common DC voltage biasing V B, M 5And M 6Drain electrode separately links to each other with active pull-up circuit and forms the output terminal of signal amplification as sensing amplifier of the present invention.
The present invention utilizes source electrode (or emitter) input differential signal, has the input common mode voltage of wide region, and circuit adopts symmetrical structure to have robustness preferably, and internal signal transmits with current system, can realize that high gain-bandwidth is long-pending with miniwatt, and response speed is fast.Below explain detailedly with the specific embodiment conjunction with figs. so that be easier to understand purpose of the present invention, technology contents, characteristics and effect thereof.
Description of drawings
The collapsible common source and common grid amplifier of Fig. 1 a tradition grid input signal
The sensing amplifier of Fig. 1 b tradition source electrode input signal
Fig. 2 sensing amplifier block diagram of the present invention
An example circuit diagram of Fig. 3 a sensing amplifier of the present invention
Another example circuit diagram of using of device as a comparison of Fig. 3 b sensing amplifier of the present invention
Fig. 4 a adopts one of them typical case of the current sensing circuit of Fig. 3 a example circuit to use
The simulation waveform that Fig. 4 b adopts one of them typical case of the current sensing circuit of Fig. 3 a example circuit to use
The specific embodiment of the present invention
(1) invention block diagram technology is set forth
The technical scheme of sensing amplifier of the present invention comprises differential transconductance input circuit, difference cascode transduction amplifying circuit and active pull-up circuit as shown in Figure 2.Described differential transconductance input circuit is one and has voltage that symmetrical structure can realize wide common-mode input range to the current-differencing input stage, comprises (M 1, M 2) and (M of the generation difference current that constitutes 3, M 4) another of the generation difference current that constitutes, M 1~M 4Be the transistor of same type, wherein, M 1With M 4Measure-alike, M 2And M 3Measure-alike, M 1Or M 4With M 2Or M 3Equivalent breadth length ratio be M: N.And M 1And M 4All adopt diode to connect and respectively by C B1And C B2Provide the DC current biasing, M 1With M 3Source electrode (or emitter) link together, constitute an input end V of differential input stage IP, M 4With M 2Source electrode (or emitter) link together, constitute another input end V of differential input stage IN, V at this moment IPAC portion pass through M 1Be directly coupled to M 2Grid (or base stage), V INAC portion pass through M 4Be directly coupled to M 3Grid (or base stage), M 2And M 3Drain electrode (or collector) as difference current (Δ i D1, Δ i D2)Output terminal, and satisfy:
Δ i D 2 = - Δ i D 1 = Δv · g m ( M 2 , M 3 ) - - - ( 2 )
Δ v is the pressure reduction of input end.
It is the common-mode input range that can not had the upper limit in theory that this input stage adopts the advantage of source electrode (emitter) input signal, and its minimum input common mode voltage is:
V CM _ MIN = V SG ( M 1 , 4 ) + V C B 1.2 - - - ( 3 )
Wherein:
Be current source C B1And C B2The minimum voltage difference that its two ends need during operate as normal.
Difference current (Δ i D1, Δ i D2) output terminal link to each other with the input end of described difference cascode transduction amplifying circuit, comprise the transistor M of same type and size 5And M 6, C B3And C B4Respectively with M 5And M 6Source electrode (or emitter, preferred FET) connect and the DC current biasing be provided, this tie point is as the difference current input end of the corresponding levels, M 5And M 6Grid (or base stage) has common DC voltage biasing V B, especially work as V BWhen adopting the cascode structure that gain strengthens, make M 5And M 6The node impedance that the source electrode place is arranged lower, make the inferior limit of this point at high frequency treatment, thereby obtain good frequency response.M 5And M 6Drain electrode separately links to each other with active pull-up circuit and forms the output terminal of signal amplification as sensing amplifier of the present invention.Active load generally adopts the current mirror mode, thereby especially the cascade interface that strengthens of cascode structure or gain can obtain high output impedance and obtains high output gain, and its every dc bias current is:
I active _ load = I C B 3.4 - N M I C B 1.2 - - - ( 4 )
So C B3And C B4Bias current must be enough greatly, to satisfy the direct current biasing demand of active load.
Bias voltage V BMust be enough high to satisfy cascade transduction amplifier operate as normal, with respect to power rail V PS2, V BThe condition that needs to satisfy is:
V B > V GS ( M 5,6 ) + V C B 3.4 - - - ( 5 )
Wherein:
V GS (M5,6)Be M 5, M 6Grid source (base-emitter) driving voltage
Be C B3, C B4Minimum
Simultaneously, the simulation output area of sensing amplifier is subjected to V BWith the restriction of active pull-up circuit structure, its minimum output voltage is by V BBe restricted to:
V O(min)=V B-V TH (5)
Wherein:
V THThreshold voltage for MOSFET.
(2) example of sensing amplifier shown in Fig. 3 a and the typical case's application (Fig. 4) in current sense thereof is set forth
Fig. 3 a is depicted as an example of sensing amplifier, measure-alike PMOS transistor M among Fig. 3 a 13, M 14, M 15Be the current offset part on basis, its bias current is 1uA, M 16Respectively and M 5, M 6, M 7, M 8Bias current sources C in the
pie graph2 of pairing back B1, C B2, C B3, C B4, M wherein 16, M 5, M 6Measure-alike, M 7And M 8The equivalence breadth length ratio is
M162 times so that the current offset of 1uA is provided for the active load of back; PMOS transistor M 1~M 4M in the corresponding diagram 2 1~M 4, its size is all identical, and input end is respectively vip and vin.Measure-alike NMOS pipe M 9And M 10M in the
pie graph2 5And M 6, its gate bias is managed M by NMOS 17M is provided 17Equivalent wide ratio be M 161/12; Measure-alike PMOS pipe M 11And M 12Constitute current mirror load.
This circuit is single-ended output, and the highest of output area is than the low 0.2V of supply voltage, and its DC current gain equals 2g M (M2,3)* r O (M12), g wherein M (M2,3)Be M 2And M 3Mutual conductance, r O (M12)Be M 12Output impedance.
Fig. 4 a is for adopting the example that the typical case uses in current sense of this Fig. 3 a amplifier, and is wherein identical with Fig. 3 a amplifier in the frame of broken lines s; Supply voltage V DDBe 5V, M SWBe current switch, M P1Be current sense pipe, M P1Size and M SWRatio be 2: 10 5, they have drive signal V DRVV is worked as in control DRVElectric current is closed during=5V, works as V DRV=0 o'clock electric current I LBy.The static input current of amplifier is I B=2uA, M P2Link to each other with the output of amplifier and back linking to each other constitute negative feedback, M with the negative terminal input vin of amplifier P2Also can make M among Fig. 3 a 11And M 12More symmetrical, work as V DRV, force M at=0 o'clock P1And M SWBoth end voltage is identical, passes through I CCompensation, thereby the electric current I that senses SensBe I L2/10 5, this function of current is to wave filter R SAnd C SAfter output voltage V SenseShown in Fig. 4 b, waveform can satisfy the demand of high frequency switch power less than 50ns Time Created.
(3) sensing amplifier example shown in Fig. 3 b is set forth
Fig. 3 b is depicted as another example of sensing amplifier, measure-alike PMOS transistor M among Fig. 3 b 15, M 16, M 17Be the current offset part on basis, its bias current is 1uA, M 18Respectively and M 5, M 6, M 7, M 8Bias current sources C in the
pie graph2 of pairing back B1, C B2, C B3, C B4, M wherein 18, M 5, M 6Measure-alike, M 7And M 8The equivalence breadth length ratio is
M162 times so that the current offset of 1uA is provided for the active load of back; PMOS transistor M 1~M 4M in the corresponding diagram 2 1~M 4, its size is all identical, and input end is respectively vip and vin.Measure-alike NMOS pipe M 9And M 10M in the
pie graph2 5And M 6, its gate bias is managed M by NMOS 19M is provided 19Equivalent wide ratio be M 181/12; Measure-alike PMOS pipe M 11And M 12, M 13, M 14A, M 14BConstitute the cascade load, M 14AAnd M 14BBiasing circuit be 1uA.
This circuit is single-ended output, has symmetrical structure, and gain reaches g M (M2,3)r O (M12)g M (m13)r O (m13), be suitable as that comparer detects at current detecting such as peak current detection, valley point current, use in the zero passage detection.
Below the useful result of this circuit comprises as can be known:
(a), common-mode input range is big, the minimum value of input common mode voltage is V in theory TH+ 2V OV, there is not higher limit, can reach any high pressure that technology is supported, wherein V THBe transistorized threshold voltage (about 0.7V), V OV(0.1V~0.2V) is generally got in board design for its overdrive voltage;
(b), whole signal flow is by the source electrode or the emitting stage input of differential mode, reduced the Miller phenomenon, response speed is fast, can under miniwatt, realize big gain bandwidth product, and differential mode can make the input dc offset voltage be subjected to the influence of technology, supply voltage, temperature (PVT) drift little, also makes entire circuit have stronger common mode inhibition capacity.
Claims (4)
1.一种信号感测放大器,用于对电流通道进行电流大小的实时感测,或对通道电流状态进行电流检测,包括差分跨导输入电路、差分共源共栅转导放大电路和有源负载电路;所述差分跨导输入电路为一个具有对称结构能实现宽共模输入范围的电压到电流差分输入级,包括由晶体管M1及M2构成的产生差分电流的一支,和由M3及M4构成的产生差分电流的另一支,M1和M4均采用二极管连接并分别由电流源CB1和CB2提供直流电流偏置,M1与M3的源极连接在一起,构成差分输入级的一个输入端,M4与M2的源极连接在一起,构成差分输入级的另一个输入端,M2和M3的漏极作为差分电流的输出端与下一级输入端相连;所述差分共源共栅转导放大电路包括相同类型和尺寸的晶体管M5和M6,CB3和CB4分别与M5与M6的源极连接并提供直流电流偏置,该连接点作为本级的差分电流输入端,M5和M6栅极具有共同的直流电压偏置VB,M5和M6各自的漏极与有源负载电路相连形成信号放大作为所述感测放大器的输出端。1. A signal sensing amplifier, used for real-time sensing of the current magnitude of the current channel, or current detection of the current state of the channel, including a differential transconductance input circuit, a differential cascode transconductance amplifier circuit and an active Load circuit; the differential transconductance input circuit is a voltage-to-current differential input stage with a symmetrical structure that can realize a wide common-mode input range, including a branch that generates a differential current composed of transistors M1 and M2 , and is formed by M 3 and M 4 constitute another branch that generates differential current. Both M 1 and M 4 are connected by diodes and are respectively provided with DC current bias by current sources C B1 and C B2 . The sources of M 1 and M 3 are connected together , constituting one input end of the differential input stage, M4 and the source of M2 are connected together to form the other input end of the differential input stage, and the drains of M2 and M3 are used as the output end of the differential current to communicate with the next stage The input terminals are connected; the differential cascode transconductance amplifier circuit includes transistors M5 and M6 of the same type and size, and C B3 and C B4 are respectively connected to the sources of M5 and M6 and provide a DC current bias , this connection point is used as the differential current input terminal of this stage, the gates of M5 and M6 have a common DC voltage bias V B , the respective drains of M5 and M6 are connected to the active load circuit to form a signal amplification as the output of the sense amplifier described above. 2.根据权利要求1所述之信号感测放大器,其特征在于,所述晶体管M1,M2,M3,M4为相同类型的晶体管;M1与M4的尺寸相同,M2和M3的尺寸相同。2. The signal sense amplifier according to claim 1, wherein the transistors M 1 , M 2 , M 3 , and M 4 are transistors of the same type; M 1 and M 4 have the same size, M 2 and M 4 M 3 is the same size. 3.根据权利要求1所述之信号感测放大器,其特征在于,所述差分跨导输入电路中,M1与M3的发射极连接在一起,构成差分输入级的一个输入端,M4与M2的发射极连接在一起,构成差分输入级的另一个输入端,M2和M3的集电极作为差分电流的输出端与下一级输入端相连。3. The signal sense amplifier according to claim 1, characterized in that, in the differential transconductance input circuit, the emitters of M1 and M3 are connected together to form an input end of the differential input stage, M4 It is connected with the emitter of M2 to form another input terminal of the differential input stage, and the collectors of M2 and M3 are connected to the input terminal of the next stage as the output terminal of the differential current. 4.根据权利要求1或3所述之信号感测放大器,其特征在于,所述差分共源共栅转导放大电路中,CB3和CB4分别与M5与M6的发射极连接并提供直流电流偏置,该连接点作为本级的差分电流输入端,M5和M6基极具有共同的直流电压偏置VB,M5和M6各自的漏极与有源负载电路相连形成信号放大作为所述感测放大器的输出端。4. The signal sense amplifier according to claim 1 or 3, characterized in that, in the differential cascode transconductance amplifier circuit, C B3 and C B4 are respectively connected to the emitters of M5 and M6 and Provide DC current bias, this connection point is used as the differential current input terminal of this stage, the bases of M5 and M6 have a common DC voltage bias VB , and the respective drains of M5 and M6 are connected to the active load circuit A signal amplified is formed as the output of the sense amplifier.
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CN103604974A (en) * | 2013-11-11 | 2014-02-26 | 浙江工业大学 | Low-power current detection circuit for current mode DC/DC converter |
CN104202062A (en) * | 2014-09-25 | 2014-12-10 | 长沙景嘉微电子股份有限公司 | USB difference receiver in wide common mode input field |
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CN104897943A (en) * | 2015-04-30 | 2015-09-09 | 中国电子科技集团公司第五十八研究所 | High-sensitivity low-power current detection circuit |
CN105116209A (en) * | 2015-07-14 | 2015-12-02 | 电子科技大学 | High voltage zero-crossing detection circuit |
CN105388349A (en) * | 2014-08-26 | 2016-03-09 | 英特希尔美国公司 | Remote differential voltage sensing |
CN105929887A (en) * | 2016-05-18 | 2016-09-07 | 华南理工大学 | Low-power-consumption broad-band current differential circuit |
CN112730957A (en) * | 2020-12-21 | 2021-04-30 | 华中科技大学 | Current detection circuit |
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