CN103187533A - Organic light-emitting device and preparation method thereof - Google Patents
- ️Wed Jul 03 2013
CN103187533A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
-
Publication number
- CN103187533A CN103187533A CN2011104560456A CN201110456045A CN103187533A CN 103187533 A CN103187533 A CN 103187533A CN 2011104560456 A CN2011104560456 A CN 2011104560456A CN 201110456045 A CN201110456045 A CN 201110456045A CN 103187533 A CN103187533 A CN 103187533A Authority
- CN
- China Prior art keywords
- layer
- electrode
- grid
- evaporation
- substrate Prior art date
- 2011-12-30 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000002834 transmittance Methods 0.000 claims description 21
- 238000005401 electroluminescence Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 4
- 210000000481 breast Anatomy 0.000 claims description 3
- 230000001413 cellular effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 424
- 239000011521 glass Substances 0.000 abstract description 29
- 239000002346 layers by function Substances 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 134
- 238000001704 evaporation Methods 0.000 description 134
- 238000000034 method Methods 0.000 description 90
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 72
- 230000005540 biological transmission Effects 0.000 description 48
- 230000027756 respiratory electron transport chain Effects 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 40
- 229920002120 photoresistant polymer Polymers 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 27
- 239000000463 material Substances 0.000 description 20
- 229910052774 Proactinium Inorganic materials 0.000 description 19
- 239000011247 coating layer Substances 0.000 description 19
- 238000004528 spin coating Methods 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- KMQPLEYEXDZOJF-UHFFFAOYSA-N 1-naphthalen-2-ylanthracene Chemical compound C1=CC=C2C=C3C(C4=CC5=CC=CC=C5C=C4)=CC=CC3=CC2=C1 KMQPLEYEXDZOJF-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical class C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
本发明涉及一种有机电致发光器件及其制备方法，有机电致发光器件包括依次层叠的下述层：基板、第一电极层、有机功能层、第二电极层，并且，其还包括一层低折射率栅格层，所述栅格层的折射率为大于1.0且低于所述有机功能层的折射率，所述栅格层置于第一电极层与有机功能层之间，或者所述栅格层置于基板与第一电极层之间。通过该栅格层对光束光路的调节，使部分原来因全反射损失的光束射入到玻璃到达空气中，从而提高有机发光显示器件的亮度及效率。
The present invention relates to an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device comprises the following layers stacked in sequence: a substrate, a first electrode layer, an organic functional layer, and a second electrode layer, and it also includes a A low refractive index grid layer, the refractive index of the grid layer is greater than 1.0 and lower than the refractive index of the organic functional layer, the grid layer is placed between the first electrode layer and the organic functional layer, or The grid layer is placed between the substrate and the first electrode layer. Through the adjustment of the optical path of the light beam by the grid layer, part of the light beam originally lost due to total reflection enters the glass and reaches the air, thereby improving the brightness and efficiency of the organic light-emitting display device.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device (Organic Light Emitting Device, below also be called for short OLED), relate in particular to a kind of organic electroluminescence device that comprises grid layer.The invention still further relates to the preparation method of described organic electroluminescence device.
Background technology
OLED possesses sandwich construction, comprises substrate, anode layer, organic function layer and cathode layer.Substrate makes (for example the refractive index of glass substrate is generally 1.4～1.5) by refractive index less than 1.7 material usually and the refractive index of organic function layer on it is generally 1.7～1.8.Therefore, there is very most light beam total reflection takes place and to be limited in the organic function layer at the organic function layer of high index and than the interface between the substrate of low-refraction, can not inject substrate and arrive in the air, so that OLED is actual to be issued to airborne light and only to have an
appointment20%, and 80% the light of having an appointment is limited to or loss at device inside, can't be removed application.Want to obtain high brightness, high efficiency OLED, must significantly improve the light output efficiency of OLED.
Introduced among the US20040119402 by with substrate manufacture shape and make groove in trapezoidal top in echelon, with the OLED element manufacturing therein, so that be confined in the organic layer, the light beam that injects to device side arrives the substrate front surface by the substrate of trapezoidal shape, thereby improves efficient and the brightness of device.But this method is just taken out the light beam of device marginal portion, and the substrate shape complexity of this structure, makes difficulty, the cost of manufacture height.
CN1498046A has introduced and added one deck light scattering layer between glass substrate and first electrode layer, make the light beam that is limited in the organic layer owing to total reflection between organic layer and glass substrate interface change light path by scattering, make segment beam enter glass substrate and arrive in the air, improve efficient and the brightness of device.But this method also makes the original light beam that can enter glass substrate be limited in the organic layer owing to scattering changes light path, and the ratio of this method whole raising device efficiency or brightness is lower, and owing to the scattering layer complicated process of preparation, actual application value is not high simultaneously.
CN1571595B has introduced in OLED device inside adding light loss consumption and has prevented layer and microgap layer.Wherein, light loss consumption prevents that layer from being made up of a plurality of diffraction grating that have projection; The microgap layer is filled by gas or vacuum and is formed.But owing to the fineness of diffraction grating is had relatively high expectations, so the manufacturing process complexity, rate of finished products is low.And device inside charges into problems such as gas will produce product stability problems and durability is undesirable, homogeneity of product difference.
Summary of the invention
An object of the present invention is to provide a kind of have the light output performance of improvement and the organic light emitting display that is easy to prepare.
Organic light emitting display of the present invention comprises the following layer that stacks gradually: substrate, first electrode layer, organic function layer, the second electrode lay, and, it also comprises one deck low-refraction grid layer, the refractive index of described grid layer is for greater than 1.0 and be lower than the refractive index of described organic function layer, described grid layer is between first electrode layer and organic function layer, and perhaps described grid layer is between substrate and first electrode layer.
The present invention also provides the preparation method of described organic light emitting display, is included in and forms described low-refraction grid layer on the substrate, deposits first electrode layer, organic function layer and the second electrode lay that is laminated to each other then successively; Perhaps at substrate deposition first electrode layer, form the low-refraction grid layer at first electrode layer, deposit organic function layer and the second electrode lay that is laminated to each other then successively; Encapsulation then.
Organic light emitting display of the present invention is by comprising described low-refraction grid layer, make a part originally at organic function layer with substrate interface because the light beam that the total reflection reason is lost, by the adjusting of this low-refraction grid layer to beam path, thereby and be injected in the substrate and arrive in the air.Therefore, organic light emitting display of the present invention has brightness and the efficient of raising.And because this low-refraction grid layer is less demanding to the processing technology fineness, therefore can by simple technology for example photoetching process make and good product consistency.
Description of drawings
Fig. 1 is the profile of the structure (Comparative Examples 1) of organic light emitting display in the prior art;
Fig. 2 is Comparative Examples 1 light emitting pixel figure figure;
Fig. 3 is the square grid layer pattern of embodiment 1;
The square grid pattern of Fig. 4 for demonstrating in the pixel region of embodiment 1;
Fig. 5 is the profile of a kind of OLED structure of the present invention;
Fig. 6 is the profile of the another kind of OLED structure of the present invention;
Fig. 7 is the comb mesh pattern of the square nested shape that demonstrates in the pixel region;
Fig. 8 is the comb mesh pattern of the nested shape of hexagon that demonstrates in the pixel region;
Fig. 9 is the comb mesh pattern of the circular nested shape that demonstrates in the pixel region;
The hexagonal grid pattern of Figure 10 for arranging in tight adjacent mode in the single pixel region;
Figure 11 is the hexagonal grid pattern of arranging in tight adjacent mode shown in the pixel region.
Embodiment
Organic light emitting display of the present invention comprises the following layer that stacks gradually: substrate, first electrode layer, organic function layer, the second electrode lay, and, it also comprises one deck low-refraction grid layer, the refractive index of described grid layer is for greater than 1.0 and be lower than the refractive index of described organic function layer, described grid layer is between first electrode layer and organic function layer, and perhaps described grid layer is between substrate and first electrode layer.
Described grid layer can have described refractive index and be applicable to that the material of OLED makes with any, for the ease of forming comb mesh pattern thereon, preferably adopts photoresist to prepare described grid layer, and for example contact panel is with photonasty insulation and protective layer photoresist EOC130.
In order to make more light can inject substrate and arrive in the air, preferred described grid layer is between substrate and first electrode layer.
The refractive index of this grid layer is preferably 1.0-1.5.The refractive index of grid layer is more low, and entering into substrate, to arrive airborne light beam more many, and the amplitude that display device brightness improves is just more big.
In order to make the light of regulating light path via grid layer more inject substrate and enter in the air, preferably the light transmittance of this grid layer is 75%-99%.
For ease of making, preferably the thickness of this grid layer is 0.1 μ m～20 μ m, more preferably 0.1 μ m～5 μ m.
In each pixel region, the pattern that the bossing of described grid layer constitutes is preferably: the n-shaped of a plurality of identical sizes of arranging in tight adjacent mode (being all shared each limits of adjacent n-shaped with other of each n-shaped that is not positioned at most peripheral), make the grid layer pattern be netted, and wherein each limit of n-shaped is bossing; Or a series of with concentric form identical and a plurality of n-shapeds or circle that size is different of nested shape layer by layer, wherein the border of each pixel region with interior, maximum n-shaped or circular beyond the ratio of region area and this pixel region gross area be preferably greater than 0 and be not higher than 1/4.N 〉=3 wherein, and described n-shaped is preferably equilateral triangle, square or regular hexagon.
The width on each limit of the above-mentioned n-shaped of arranging in tight adjacent mode, perhaps in the above-mentioned nested pattern layer by layer each maximum n-shaped or circular in the width d1 of each bossing be preferably 0.05 μ m～20 μ m, the circumradius in each n-shaped space in the n-shaped cellular grid of above-mentioned tight adjacent arrangement, layer by layer in the nested pattern each maximum n-shaped or circular in the width d2 in each space (space that does not comprise the bosom) be preferably 1 μ m～30 μ m, the width in the space in described bosom preferably less than maximum n-shaped or circular in two times of other each gap length d2.The size of d1 and d2 influences the brightness of device.In order to improve the brightness of device, d1 is 0.05 μ m to 5 μ m more preferably, 0.05 μ m to 3 μ m especially, and d2 is 1 μ m to 10 μ m more preferably.
The zone of described grid layer beyond the pixel region can have comb mesh pattern, also can not have comb mesh pattern and all as bossing.
Described OLED can have insulating barrier and the insulated column layer forms to define pixel region, and described insulating barrier and insulated column layer are laminated to each other and between grid layer and the organic function layer or between first electrode layer and the organic function layer.Yet when described grid layer did not have comb mesh pattern in the part beyond the pixel region, described OLED can not comprise described insulating barrier in addition.Insulating barrier and insulated column layer can adopt conventional material and the method making that is used for making insulating barrier and insulated column layer in this area, for example adopt photoetching process to make with photoresist.
Among the described OLED, can adopt the first transparent electrode layer and possess the second electrode lay of reflection function, also can adopt first electrode layer that possesses reflection function and transparent the second electrode lay, perhaps adopt the first transparent electrode layer and transparent the second electrode lay.
In the embodiment of this paper, any one can be anode in first electrode layer and the second electrode lay, and another person is negative electrode, and can adopt conventional material preparation for the manufacture of electrode layer, for example ITO (tin indium oxide) or Ag or Al.
Organic function layer generally includes hole transmission layer, luminescent layer and electron transfer layer, and it all can adopt the material preparation that is usually used in making these layers in the prior art.As the material of hole transmission layer, for example can use the low molecular material of arylamine class material etc., N for example, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-xenyl-4,4 '-diamines (NPB); As the material of electron transfer layer, can use for example metal organic complex, aromatic condensed ring class or o-phenanthroline class etc., for example three (oxine) aluminium (Alq 3).Luminescent layer can be made up of the material that is usually used in luminescent layer in this area, for example can be made up of luminescent layer material of main part and luminescent layer dyestuff.The luminescent layer material of main part can adopt in this area the conventional material that is used for this purpose, for example small molecule material such as metal organic complex, carbazole derivates, anthracene derivant etc., for example 9,10-two (naphthalene-2-yl) anthracene (ADN).The luminescent layer dyestuff can adopt in this area the conventional material that is used for this purpose, for example contains atomic number greater than 36 compound or perylene derivatives less than 84 at least a atom, as 2,5,8,11-, four uncle Ding Ji perylenes (TBPe).The ratio of luminescent layer material of main part and luminescent layer dyestuff can be used its conventional ratio in the art.
In addition, described organic function layer also can further comprise hole injection layer and/or electron injecting layer, and hole injection layer and electron injecting layer all can adopt the material that is usually used in hole injection layer or electron injecting layer in the prior art.The hole injection layer material can be for example m-MTDATA, and the electron injecting layer material can be for example LiF.
The thickness of above-mentioned each layer all can adopt its conventional thickness in OLED.
Fig. 5 illustrates the profile of a kind of OLED structure of the present invention.Wherein, 10 is substrate; 20 is first electrode layer; 30 is the low-refraction grid layer; 40 is organic function layer, can comprise hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer; 50 is the second electrode lay.
Fig. 6 illustrates the profile of the another kind of device architecture of the present invention.Wherein, 10 is substrate; 30 is grid layer; 20 is first electrode layer; 40 is organic function layer, can comprise hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer; 50 is the second electrode lay.
The preparation of organic light emitting display of the present invention is included in and forms described low-refraction grid layer on the substrate, deposits first electrode layer, organic function layer and the second electrode lay that is laminated to each other then successively; Perhaps at substrate deposition first electrode layer, form the low-refraction grid layer at first electrode layer, deposit organic function layer and the second electrode lay that is laminated to each other then successively; Encapsulation then.
Described grid layer can for example be prepared by photoetching process, or by other any appropriate methodologies preparations well known by persons skilled in the art.When described grid layer was prepared by photoetching process, its preparation process mainly comprised: the photoresist that described refractive index is arranged at applying implenent on the substrate or on first electrode layer; Oven dry; The mask that use has required pattern exposes; And develop.
Described deposition can adopt any suitable method that the inventive method desired substance can be covered on the whole target surface well known by persons skilled in the art, for example vacuum vapour deposition.Encapsulation can be adopted any suitable method well known by persons skilled in the art.
By the following examples the present invention is further specified.Wherein brightness is measured with silicon photo diode.Among each embodiment, the refractive index of formed low-refraction grid layer is identical with the refractive index of the material that is used to form it.
Comparative Examples 1
Be substrate with the ITO electro-conductive glass, etch ITO first electrode pattern, wherein ITO thickness is 200nm, prepares insulating barrier and the insulated column layer that thickness is 1-3 μ m by photoetching process, makes that pixel size is 0.28mm * 0.28mm.This ITO conducting glass substrate is put into the evaporation chamber, and evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa.The thick N of evaporation 40nm at first, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-diamines (NPB) is as hole transmission layer; The method evaporation 30nm that steams altogether with double source thick 9,10-two (naphthalene-2-yl) anthracene (ADN) and 2,5,8,11-, four uncle Ding Ji perylenes (TBPe) are as luminescent layer, the ratio of through-rate control TBPe in ADN is 7%; Three (oxine) aluminium (Alq of evaporation 20nm 3) as electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Fig. 1 is the profile of Comparative Examples 1 device architecture.Wherein, 10 is substrate; 20 is the first electrode layer ITO; 40 is organic function layer, comprises hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer; 50 is the second electrode lay.
Fig. 2 is the light emitting pixel figure figure of Comparative Examples 1.
Embodiment 1:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: spin coating layer of transparent photoresist on the ITO figure (contact panel insulate and protective layer photoresist EOC130 with photonasty, and light transmittance is greater than 80%, and refractive index is 1.5).After the oven dry, select for use the mask of the continuous figure of square net anyway with 150mj/cm 2Exposure exposure; The developing liquid developing that provides simultaneously with the manufacturer of above-mentioned photoresist obtains the grid layer of special pattern (d2 as hereinbefore defined and be 8 μ m) square net, d1 as hereinbefore defined and be 1 μ m, after 100 seconds.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Fig. 3 is the grid layer pattern of embodiment 1;
The comb mesh pattern of Fig. 4 for demonstrating in the pixel region of embodiment 1;
Embodiment 2:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 0.05 μ m, and d2 is 1 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 3:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, but d1 is 1 μ m, d2 is 4 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 4:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 2 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 5:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 8 μ m, and d2 is 25 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 6:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing the ITO layer, adopt lithographic method to etch ito anode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as second electrode.
Embodiment 7:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of the figure of square nested shape anyway with 150mj/cm 2Exposure exposure; It is (a series of with concentric form nested a plurality of foursquare grid layer by layer in each pixel region to obtain special pattern after developing with the method identical with embodiment 1, wherein the largest square in each pixel region is identical with the pixel region size, d1 is 1 μ m, and d2 is 4 μ m) grid layer.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Fig. 7 is the comb mesh pattern of square nested shape of the pixel region of embodiment 7.
Embodiment 8:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square anyway nested shape figure with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (figure similar to Example 7, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing ITO first electrode layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 9:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of the nested shape figure of anti-hexagon with 150mj/cm 2Exposure exposure; It is (a series of with concentric form nested a plurality of hexagonal grid layer by layer in each pixel region to obtain special pattern after developing with the method identical with embodiment 1, wherein the spacing of maximum hexagonal two parallel edges equals the pixel region length of side in each pixel region, d1 is 1 μ m, and d2 is 4 μ m) grid layer.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing ITO first electrode layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Fig. 8 is the comb mesh pattern of the nested shape of hexagon of the pixel region of embodiment 9.
Embodiment 10:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of anti-circular nested shape figure with 150mj/cm 2Exposure exposure; It is (a series of with the concentric form grid of nested a plurality of circles layer by layer in each pixel region to obtain special pattern after developing with the method identical with embodiment 1, wherein the greatest circle in each pixel region is inscribed within pixel region, d1 is 1 μ m, and d2 is 4 μ m) grid layer.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing ITO first electrode layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Fig. 9 is the comb mesh pattern of circular nested shape of the pixel region of
embodiment10.
Embodiment 11:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: spin coating layer of transparent photoresist on the ITO figure (light transmittance is greater than 80%, and refractive index is 1.3).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 12:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: spin coating layer of transparent photoresist on the substrate substrate (light transmittance is greater than 80%, and refractive index is 1.3).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing ITO first electrode layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 13:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: spin coating layer of transparent photoresist on the ITO figure (light transmittance is greater than 80%, and refractive index is 1.7).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Embodiment 14:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of the continuous figure of hexagonal mesh anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (regular hexagon grid, d1 are 1 μ m, and d2 is 5 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively, evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa.In the present embodiment, organic layer at first the thick NPB of evaporation 40nm as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Figure 10 is the interior hexagonal mesh pattern of single pixel region of embodiment 14.
Figure 11 is the hexagonal grid pattern of the pixel region of embodiment 14.
Embodiment 15:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of hexagonal mesh figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (regular hexagon grid similar to Example 14, d1 are 1 μ m, and d2 is 5 μ m) after developing with the method identical with embodiment 1.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing the ITO layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The LiF of evaporation 0.5nm as the Al of electron injecting layer and 150nm as the second electrode lay.
Comparative Examples 2:
Be substrate with the clear glass, adopt sputter or evaporation coating method to make the silver of one deck 100nm as first electrode thereon.Behind etching silver first electrode pattern, prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.Put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Embodiment 16:
Be substrate with the clear glass, adopt sputter or evaporation coating method to make the silver of one deck 100nm as first electrode.Behind etching silver first electrode pattern, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on silver-colored figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of hexagonal mesh figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (regular hexagon grid similar to Example 14, d1 are 1 μ m, and d2 is 5 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Embodiment 17:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of hexagonal mesh figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (regular hexagon grid similar to Example 14, d1 are 1 μ m, and d2 is 5 μ m) after developing with the method identical with embodiment 1.The back adopts sputter or evaporation coating method to make the silver of one deck 100nm as first electrode.Behind etching silver first electrode pattern.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.Put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa.In the present embodiment, organic layer at first the thick NPB of evaporation 40nm as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Comparative Examples 3:
With the ITO electro-conductive glass identical with Comparative Examples 1 as substrate, etch ITO first electrode after, prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.Put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Embodiment 18:
Be substrate with the ITO electro-conductive glass identical with Comparative Examples 1, etch ITO first electrode pattern after, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid preparation process is as follows: and spin coating layer of transparent photoresist on the ITO figure (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Embodiment 19:
Be substrate with the clear glass, prepare one deck low-refraction grid layer thereon, thick about 2 μ m.Low-refraction grid layer preparation process is as follows: and spin coating layer of transparent photoresist on the substrate substrate (photoresist identical with embodiment 1, light transmittance is greater than 80%, refractive index is 1.5).After the oven dry, select for use the mask of square net figure anyway with 150mj/cm 2Exposure exposure; Obtain the grid layer of special pattern (square net similar to Example 1, d1 are 1 μ m, and d2 is 4 μ m) after developing with the method identical with embodiment 1.On grid layer, adopt direct current magnetron sputtering process to prepare ITO first electrode layer of 150nm, the ITO target is indium stannum alloy, its composition ratio In: Sn=90%: 10%.Partial pressure of oxygen is 0.4Sccm in the preparation process, and argon partial pressure is 20Sccm.After preparing the ITO layer, adopt lithographic method to etch ITO first electrode.Prepare insulating barrier and insulated column layer in the same manner with Comparative Examples 1 thereon, make that pixel size is 0.28mm * 0.28mm.After put into evaporation chamber evaporation hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, the second electrode lay successively.Evaporate process middle chamber pressure is lower than 5.0 * 10 -3Pa, at first the thick NPB of evaporation 40nm is as hole transmission layer; The ADN that the method evaporation 30nm that steams altogether with double source is thick and TBPe are as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm 3As electron transfer layer; The Li of evaporation 0.5nm is as electron injecting layer, and the back adopts sputtering method to make the ITO of 150nm as the second electrode lay.
Table 1
Annotate: the transparent devices brightness of Comparative Examples 3, embodiment 18, embodiment 19 is the luminosity of device substrate face.
By above data as can be seen, by adding low-refraction grid layer of the present invention, device brightness is significantly improved than the device of no grid layer, shows that the use of low-refraction grid layer has increased the output that is limited in the light in the device originally really.Wherein grid layer places the OLED on the substrate to place the brightness of the OLED on first electrode layer higher than grid layer.And the grid layer refractive index is when low, and device brightness is higher, shows to adopt the more grid of low-refraction, the light that more is limited in the device is output arrives in the air.In addition, above embodiment also demonstrates, and the brightness of the d1 of comb mesh pattern and the device of d2 also has tangible influence.
Claims (10)
1. organic electroluminescence device, comprise the following layer that stacks gradually: substrate, first electrode layer, organic function layer, the second electrode lay, and, it also comprises one deck low-refraction grid layer, the refractive index of described grid layer is for greater than 1.0 and be lower than the refractive index of described organic function layer, described grid layer is between first electrode layer and organic function layer, and perhaps described grid layer is between substrate and first electrode layer.
2. the organic electroluminescence device of claim 1 is characterized in that, the refractive index of described grid layer is 1.0-1.5.
3. the organic electroluminescence device of claim 1 is characterized in that, the light transmittance of this grid layer is 75%-99%.
4. the organic electroluminescence device of claim 1 is characterized in that, the thickness of this grid layer is 0.1 μ m～20 μ m, is preferably 0.1 μ m～5 μ m.
5. the organic electroluminescence device of claim 1, it is characterized in that, in each pixel region, the pattern that the bossing of described grid layer constitutes is: the n-shaped of a plurality of identical sizes of arranging in tight adjacent mode, make the grid layer pattern be netted, and wherein each limit of n-shaped is bossing; Or a series of with concentric form identical and a plurality of n-shapeds or circle that size is different of nested shape layer by layer, wherein the border of each pixel region with interior, maximum n-shaped or circular beyond the ratio of region area and this pixel region gross area be preferably greater than 0 and be not higher than 1/4; N 〉=3 wherein.
6. the organic electroluminescence device of claim 5 is characterized in that, described n-shaped is equilateral triangle, square or regular hexagon.
7. the organic electroluminescence device of claim 5, it is characterized in that, the width on each limit of the described n-shaped of arranging in tight adjacent mode, perhaps in the described nested pattern layer by layer each maximum n-shaped or circular in the width d1 of each bossing be 0.05 μ m～20 μ m, the circumradius in each n-shaped space in the n-shaped cellular grid of described tight adjacent arrangement, layer by layer in the nested pattern each maximum n-shaped or circular in the width d2 in each space---space that does not comprise the bosom---be 1 μ m～30 μ m, the width in the space in described bosom preferably less than maximum n-shaped or circular in two times of other each gap length d2.
8. the organic electroluminescence device of claim 7 is characterized in that, d1 is 0.05 μ m to 5 μ m, 0.05 μ m to 3 μ m especially, and d2 is 1 μ m to 10 μ m.
9. the organic electroluminescence device of claim 1, it is characterized in that, described device adopts the first transparent electrode layer and possesses the second electrode lay of reflection function, or adopt and to possess first electrode layer of reflection function and transparent the second electrode lay, perhaps adopt the first transparent electrode layer and transparent the second electrode lay.
10. the preparation method of organic light emitting display is included in and forms refractive index on the substrate greater than 1.0 and be lower than the low-refraction grid layer of the refractive index of organic function layer, then first electrode layer, organic function layer and the second electrode lay that are laminated to each other of deposition successively; Perhaps at substrate deposition first electrode layer, form the low-refraction grid layer at first electrode layer, deposit organic function layer and the second electrode lay that is laminated to each other then successively; Encapsulation then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110456045.6A CN103187533B (en) | 2011-12-30 | 2011-12-30 | A kind of organic electroluminescence device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110456045.6A CN103187533B (en) | 2011-12-30 | 2011-12-30 | A kind of organic electroluminescence device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103187533A true CN103187533A (en) | 2013-07-03 |
| CN103187533B CN103187533B (en) | 2016-09-28 |
Family
ID=48678600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110456045.6A Active CN103187533B (en) | 2011-12-30 | 2011-12-30 | A kind of organic electroluminescence device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103187533B (en) |
Cited By (8)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715359A (en) * | 2013-10-21 | 2014-04-09 | 昆山维信诺显示技术有限公司 | OLED device and manufacture method thereof |
| CN103928625A (en) * | 2014-04-08 | 2014-07-16 | 陕西科技大学 | Device structure and preparation method of a flexible transparent OLED |
| CN103928635A (en) * | 2014-04-18 | 2014-07-16 | 上海和辉光电有限公司 | OLED device anode structure |
| CN103972262A (en) * | 2013-11-19 | 2014-08-06 | 厦门天马微电子有限公司 | Organic light-emitting display device and manufacture method thereof |
| CN106997928A (en) * | 2016-01-26 | 2017-08-01 | 昆山工研院新型平板显示技术中心有限公司 | OLED and its manufacture method |
| CN108022955A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device |
| WO2018157620A1 (en) * | 2017-03-02 | 2018-09-07 | 京东方科技集团股份有限公司 | Electroluminescent display panel, method for manufacturing same, and display device |
| CN109346006A (en) * | 2018-10-10 | 2019-02-15 | 固安翌光科技有限公司 | A kind of OLED screen body constant current source driving circuit |
Citations (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411325A (en) * | 2001-10-03 | 2003-04-16 | 日本电气株式会社 | Lighting apparatus and preparing process thereof, and display using lighting apparatus |
| CN101647134A (en) * | 2007-03-30 | 2010-02-10 | 密执安州立大学董事会 | OLED with improved light outcoupling |
| US20100182222A1 (en) * | 2008-12-05 | 2010-07-22 | Panasonic Corporation | Light-emitting device, display apparatus and lighting apparatus each including light-emitting device and manufacturing method of light-emitting device |
| US20110115367A1 (en) * | 2009-11-18 | 2011-05-19 | Electronics And Telecommunications Research Institute | Organic light emitting diode using phase separation and method of fabricating the same |
| CN102246064A (en) * | 2008-10-31 | 2011-11-16 | 3M创新有限公司 | Light extraction film with high index backfill layer and passivation layer |
-
2011
- 2011-12-30 CN CN201110456045.6A patent/CN103187533B/en active Active
Patent Citations (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411325A (en) * | 2001-10-03 | 2003-04-16 | 日本电气株式会社 | Lighting apparatus and preparing process thereof, and display using lighting apparatus |
| CN101647134A (en) * | 2007-03-30 | 2010-02-10 | 密执安州立大学董事会 | OLED with improved light outcoupling |
| CN102246064A (en) * | 2008-10-31 | 2011-11-16 | 3M创新有限公司 | Light extraction film with high index backfill layer and passivation layer |
| US20100182222A1 (en) * | 2008-12-05 | 2010-07-22 | Panasonic Corporation | Light-emitting device, display apparatus and lighting apparatus each including light-emitting device and manufacturing method of light-emitting device |
| US20110115367A1 (en) * | 2009-11-18 | 2011-05-19 | Electronics And Telecommunications Research Institute | Organic light emitting diode using phase separation and method of fabricating the same |
Cited By (12)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715359A (en) * | 2013-10-21 | 2014-04-09 | 昆山维信诺显示技术有限公司 | OLED device and manufacture method thereof |
| CN103972262A (en) * | 2013-11-19 | 2014-08-06 | 厦门天马微电子有限公司 | Organic light-emitting display device and manufacture method thereof |
| CN103928625A (en) * | 2014-04-08 | 2014-07-16 | 陕西科技大学 | Device structure and preparation method of a flexible transparent OLED |
| CN103928635A (en) * | 2014-04-18 | 2014-07-16 | 上海和辉光电有限公司 | OLED device anode structure |
| CN106997928A (en) * | 2016-01-26 | 2017-08-01 | 昆山工研院新型平板显示技术中心有限公司 | OLED and its manufacture method |
| CN106997928B (en) * | 2016-01-26 | 2018-12-11 | 昆山工研院新型平板显示技术中心有限公司 | OLED device and its manufacturing method |
| CN108022955A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device |
| CN108022955B (en) * | 2016-10-31 | 2022-03-22 | 乐金显示有限公司 | Organic light emitting display device |
| WO2018157620A1 (en) * | 2017-03-02 | 2018-09-07 | 京东方科技集团股份有限公司 | Electroluminescent display panel, method for manufacturing same, and display device |
| CN108538882A (en) * | 2017-03-02 | 2018-09-14 | 京东方科技集团股份有限公司 | Display panel and display device |
| US11283044B2 (en) | 2017-03-02 | 2022-03-22 | Boe Technology Group Co., Ltd. | Electroluminescent display panel having pixel structure array including sub-pixels with curve-shaped edges |
| CN109346006A (en) * | 2018-10-10 | 2019-02-15 | 固安翌光科技有限公司 | A kind of OLED screen body constant current source driving circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103187533B (en) | 2016-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103187533A (en) | 2013-07-03 | Organic light-emitting device and preparation method thereof |
| JP6930016B2 (en) | 2021-09-01 | OLED device with enhancement layer |
| CN107359268B (en) | 2019-04-30 | Transparent OLED display panel and manufacturing method thereof |
| CN103647026B (en) | 2016-10-19 | Full-color top-emitting OLED device and preparation method thereof |
| US10446798B2 (en) | 2019-10-15 | Top-emitting WOLED display device |
| CN106207013A (en) | 2016-12-07 | For illuminating the electroluminescent device of application |
| CN103346271A (en) | 2013-10-09 | Mask plate, OLED transparent display panel and manufacturing method of OLED transparent display panel |
| CN105206753A (en) | 2015-12-30 | Organic light emitting element |
| CN104241540A (en) | 2014-12-24 | Organic electroluminescent display device, manufacturing method thereof and display unit |
| CN103633251B (en) | 2016-12-21 | Light takes out parts and applies its organic electroluminescence device and preparation method |
| CN103824969B (en) | 2016-03-23 | There is the organic electroluminescence device of multilayer metal compound electrode |
| CN104091895B (en) | 2016-10-05 | Organic Light Emitting Diode substrate and preparation method thereof, display device |
| WO2015149465A1 (en) | 2015-10-08 | Woled back panel and manufacturing method therefor |
| Choi et al. | 2014 | Highly improved light extraction with a reduced spectrum distortion of organic light-emitting diodes composed by the sub-visible wavelength nano-scale periodic (∼ 250 nm) structure and micro-lens array |
| CN104466025B (en) | 2017-10-10 | A kind of reflecting electrode and its preparation method and application |
| WO2020143422A1 (en) | 2020-07-16 | Oled microcavity structure manufacturing method |
| CN107994126A (en) | 2018-05-04 | The preparation method and OLED ray structures of a kind of OLED ray structures |
| CN103972415B (en) | 2015-09-02 | A kind of OLED luminescent device and preparation method thereof, display unit |
| CN103346269A (en) | 2013-10-09 | Semi-transparent electrode and organic light-emitting device comprising same |
| Tsujimura et al. | 2015 | A color-tunable polychromatic organic-light-emitting-diode device with low resistive intermediate electrode for roll-to-roll manufacturing |
| JP6340674B2 (en) | 2018-06-13 | Light extraction substrate for organic light emitting device, manufacturing method thereof, and organic light emitting device including the same |
| CN109659338A (en) | 2019-04-19 | OLED display |
| US20030117067A1 (en) | 2003-06-26 | OLED having improved light extraction efficiency |
| US10923673B2 (en) | 2021-02-16 | Organic light emitting panel, manufacturing method thereof, and organic light emitting device |
| Gedda et al. | 2020 | Work function tunable metal-mesh based transparent electrodes for fabricating indium-free organic light-emitting diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 2013-07-03 | C06 | Publication | |
| 2013-07-03 | PB01 | Publication | |
| 2013-07-31 | C10 | Entry into substantive examination | |
| 2013-07-31 | SE01 | Entry into force of request for substantive examination | |
| 2016-03-16 | C41 | Transfer of patent application or patent right or utility model | |
| 2016-03-16 | TA01 | Transfer of patent application right |
Effective date of registration: 20160224 Address after: 065500 Hebei Langfang emerging industry demonstration area Applicant after: GU'AN YEOLIGHT TECHNOLOGY CO., LTD. Applicant after: Tsinghua University Address before: 215300 Kunshan high tech Zone, Jiangsu Province, Feng Feng Road, No. 188, No. Applicant before: Weixinnuo Display Tech Co., Ltd. Applicant before: Tsinghua University Applicant before: Weixinnuo Science and Technology Co., Ltd., Beijing |
| 2016-09-28 | C14 | Grant of patent or utility model | |
| 2016-09-28 | GR01 | Patent grant |