CN103441151A - Low forward voltage drop diode - Google Patents
- ️Wed Dec 11 2013
CN103441151A - Low forward voltage drop diode - Google Patents
Low forward voltage drop diode Download PDFInfo
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- CN103441151A CN103441151A CN2013103801844A CN201310380184A CN103441151A CN 103441151 A CN103441151 A CN 103441151A CN 2013103801844 A CN2013103801844 A CN 2013103801844A CN 201310380184 A CN201310380184 A CN 201310380184A CN 103441151 A CN103441151 A CN 103441151A Authority
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Abstract
The invention discloses a low forward voltage drop diode. An N type accumulation type MOSFET is adopted, the bulk effect of the MOSFET acts to reduce the potential barrier of the diode. When low forward voltage is added externally, thin layers where electrons are accumulated are formed below an N+ heavily doped region and on a gate oxidation layer and an interface of an N type lightly doped region and an electron current is formed. The forward voltage drop of the diode is further reduced. A PiN diode formed by a P+ heavily doped region, an N- epitaxial region and an N+ substrate is started along with increasing of externally added voltage to provide large currents. When reverse blocking is carried out, the MOSFET is cut off, a PN junction is rapidly consumed, and the reversal of biasing PN junction is used for bearing reverse voltage. The channel length of the N type accumulation type MOSFET is determined by the length of the N+ heavily doped region and the length of the N type lightly doped region of the N- epitaxial region. With a groove-gate structure, the area of the device is saved. In addition, one or more cells are used for integration, multiple parallel-connection cells can share the same terminal and can easily integrate with an ordinary circuit, the layout area is greatly reduced and the technology cost is reduced.
Description
Technical field
The invention belongs to the semiconductor power device technology field, relate to a kind of diode of low forward voltage drop.
Background technology
Diode is to use the earliest and most basic power electronic device, it promotes generation and the development of power electronic technology, is can not lack power diode in modern high-voltage power semiconductor device igbt (Insulated Gate Bipolar Transistor is called for short IGBT) or early stage thyristor control system.Current business-like power diode be take PiN power diode and Schottky barrier power diode (Schottky Barrier Diode) as main.The advantage of PiN has high pressure resistant, large electric current, low current leakage and low conduction loss, the intrinsic region doping content of PiN is lower, easily form large the injection when forward conduction, a large amount of minority carriers that conductivity modulation effect produces in drift region have reduced the turn-off speed of device, have limited power electronic system to the high frequency future development.The metal-semiconductor junction principle that Schottky diode utilizes metal to contact with semiconductor and forms is made, the forward cut-in voltage is less, and owing to being the majority carrier conduction, forward current is larger, and the not few sub-storage effect of Schottky barrier power diode, high switching frequency is arranged.But the drift zone resistance of its series connection has the contradictory relation that becomes 2.5 powers with device withstand voltage, hindered the high-voltage great-current application of Schottky barrier power diode, the hot properties of Schottky barrier power diode extreme difference, large leakage current and soft breakdown characteristic, make silicon Schotty potential barrier power diode usually only be operated in the following voltage range of 250V in addition.In order to improve the power diode performance, Junction Barrier Controlled diode (Junction Barrier controlled Schottky is called for short JBS) has been proposed in the industry, mix PiN/ Schottky diode (Merged P-i-N/Schottky is called for short MPS), MOS controls the devices such as diode (Metal Oxide Semiconductor Controlled Diode), these devices combine the advantage of PN junction diode and Schottky diode, have reduced to a certain extent the cut-in voltage of diode.
Summary of the invention
The present invention has announced a kind of diode structure of low forward voltage drop, adopts N-type accumulation type MOSFET, and drain electrode and the polysilicon gate short circuit of this N-type accumulation type MOSFET form the anode of low forward voltage drop diode, N jointly +substrate forms the negative electrode of low forward diode.Bulk effect effect by MOSFET makes the potential barrier of this diode low than general-purpose diode.When additional very little forward voltage, at N +heavily doped region below and oxide layer and N-type light doping section interface form the thin layer of electron accumulation, form electronic current, make the diode forward pressure drop greatly reduce; Along with the increase of applied voltage, P +heavily doped region, N -epitaxial region and N +substrate forms the PiN diode, makes device that large electric current can be provided.While blocking in the time of oppositely, the MOSFET cut-off, PN junction exhausts fast, utilizes anti-PN junction partially to bear oppositely withstand voltage.
Adopt the present invention, on the one hand, introduce N in drift region +heavily doped region, provide electronics, forms electronic current.On the other hand, accumulation type MOSFET channel length is by N +heavily doped region and N -n-type light doping section length between epitaxial region determines, is easy to control; P type island region adopts heavy doping, and a large amount of holes are provided when forming heavily doped ohmic contact.In addition, the present invention adopts slot grid structure, and it is less that structure cell can be done, and saves device area.Simultaneously, the present invention can adopt single or multiple cellulars integrated, and a plurality of cellulars in parallel can share same terminal, not only is easy to custom circuit integratedly, and greatly reduces chip area, further reduces process costs.
The present invention for achieving the above object, adopts following technical scheme:
A kind of diode of low forward voltage drop is characterized in that: comprise N +substrate, the metallization negative electrode is by N +substrate is drawn, N +above substrate, be N --epitaxial loayer; N -the epitaxial loayer top has a P type heavily doped region, and a side of P type heavily doped region has N +heavily doped region, wherein the degree of depth of P type heavily doped region is greater than N +the degree of depth of heavily doped region; One side of P type heavily doped region also has a N-type light doping section, described N +heavily doped region is adjacent with the N-type light doping section; P type heavily doped region and N -epitaxial loayer forms PN junction; N -the epitaxial loayer top has by the polygate electrodes of gate oxide and its isolation, N +heavily doped region and N-type light doping section are by gate oxide and polysilicon gate isolation; The metallization anode is positioned at top device, covers all P type heavily doped regions, N +heavily doped region, gate oxide and polysilicon gate.
This device adopts N-type accumulation type MOSFET, and drain electrode and the polysilicon gate short circuit of this N-type accumulation type MOSFET form the anode of low forward voltage drop diode, N jointly +substrate forms the negative electrode of low forward diode.N wherein +the drain electrode that heavily doped region is MOSFET, the grid that polysilicon gate is MOSFET, N +the source electrode that substrate is MOSFET.
It is further characterized in that: N +heavily doped region, N-type light doping section, N -epitaxial region and N +substrate forms the electronics path of N-type accumulation type MOSFET.P type heavily doped region and N -epitaxial region and N +substrate forms diode structure.
Further: the channel length of N-type accumulation type MOSFET is by N +heavily doped region and N -n-type light doping section length between epitaxial region determines.
Further: N-type light doping section junction depth can require flexible according to withstand voltage and cut-in voltage.
Further: described P type heavily doped region doping content is greater than 5 * 10 17cm -3.
A kind of diode extended structure of low forward voltage drop: described N -epitaxial loayer and N +also there is the N-type buffering area between substrate.
The diode extended structure of another low forward voltage drop: described N-type light doping section is replaceable is p type island region, and according to different voltage and current requirements, the degree of depth and the concentration of adjusting subregion P trap meet the demands.
Advantage of the present invention is as follows:
1, the present invention can integrated single or multiple structure cells, and the cellular of a plurality of parallel connections can share same terminal structure, are easy to custom circuit integratedly, greatly reduce chip area simultaneously.
2, the present invention can be the structures such as planar gate, groove grid.
3, the present invention adopts N-type accumulation type MOSFET, and the bulk effect effect by MOSFET makes the potential barrier of this diode low than general-purpose diode.When additional very little forward voltage, at N +heavily doped region below and oxide layer and N-type light doping section interface form the thin layer of electron accumulation, form electronic current, make the diode forward pressure drop greatly reduce; Along with the increase of applied voltage, P +heavily doped region, N -epitaxial region and N +substrate forms the PiN diode, makes device that large electric current can be provided.While blocking in the time of oppositely, the MOSFET cut-off, PN junction exhausts fast, utilizes anti-PN junction partially to bear oppositely withstand voltage.Emulated data shows, cut-in voltage is less than 0.3V, and reverse breakdown voltage can reach 140V.
4, the concentration ，NXing district that the present invention can adjust the N-type light doping section according to different electric current and voltage scope can lead to donor impurities such as injecting arsenic, phosphorus and obtain.
5, P type heavily doped region and N +the junction depth of heavily doped region is only poor can be different from N-type light doping section junction depth, and N-type light doping section junction depth can require flexible according to withstand voltage and cut-in voltage.
6, the channel length of N-type accumulation type MOSFET is by N +heavily doped region and N -n-type light doping section length between epitaxial region determines, can according to the difference of withstand voltage and cut-in voltage, require to be regulated, and increases the flexibility ratio of device design.
7, the P type heavily doped region that the present invention proposes, provide a large amount of holes when forming heavily doped ohmic contact.
8, the N that the present invention proposes +heavily doped region, be the electronics that provides of MOSFET, and forms electronic current.
The accompanying drawing explanation
Fig. 1 is the diode device structure schematic diagram of a kind of low forward voltage drop of the present invention.
Fig. 2 is the diode component planar gate structure of a kind of low forward voltage drop of the present invention.
Fig. 3 is a kind of extended structure of the diode of low forward voltage drop of the present invention.
Fig. 4 is another kind extended structure of the diode of low forward voltage drop of the present invention.
Fig. 5 is the planar gate structure of extended structure in Fig. 4.
Fig. 6 is the diode component emulation schematic diagram of low forward voltage drop of the present invention.
Fig. 7 is schottky diode device emulation schematic diagram.
Fig. 8 is PiN diode component emulation schematic diagram.
Fig. 9 is at identical N -extension concentration (2.5 * 10 15cm -3) and the comparison of the diode of the lower low forward voltage drop provided by the invention of thickness (10 μ m) and PiN diode, Schottky power diode forward curve.
Figure 10 is in identical N extension concentration (2.5 * 10 15cm -3) and the comparison of the diode of the lower low forward voltage drop provided by the invention of thickness (10 μ m) and PiN diode, Schottky power diode reverse leakage current.
Embodiment
The diode of the low forward voltage drop that the present invention proposes, adopt N-type accumulation type MOSFET, and drain electrode and the polysilicon gate short circuit of this N-type accumulation type MOSFET form the anode of low forward voltage drop diode, N jointly +substrate forms the negative electrode of low forward diode.This device makes the potential barrier of diode low than general-purpose diode by the bulk effect effect of MOSFET.When additional very little forward voltage, at N +heavily doped region below and oxide layer and N-type light doping section interface form the thin layer of electron accumulation, form electronic current, make the diode forward pressure drop greatly reduce; Along with the increase of applied voltage, P +heavily doped region, N -epitaxial region and N +substrate forms PIN diode, makes device that large electric current can be provided.While blocking in the time of oppositely, the MOSFET cut-off, PN junction exhausts fast, utilizes anti-PN junction partially to bear oppositely withstand voltage.
As shown in Figure 1, the diode of described low forward voltage drop comprises that semiconductor comprises N +substrate 7, be positioned at N +the metallization
negative electrode8 at
substrate7 back sides and be positioned at N +the N in
substrate7 fronts -
epitaxial loayer4; N -
epitaxial loayer4 tops have a P type heavily doped
region3, and P type heavily doped
region3 right upper portion are N-type heavily doped
regions2, and the degree of depth of P type heavily doped
region3 is greater than the degree of depth of N-type heavily doped
region2; P type heavily doped
region3 lower right side are N-type
light doping sections9, doping content and the N of the present invention's N-type
light doping section9 in emulation -
epitaxial loayer4 is identical; P type heavily doped
region3 and N -
epitaxial loayer4 forms PN junction; N -
epitaxial loayer4 top right side are polysilicon gates 5, and
gate oxide6 surrounds polygate electrodes 5, and N-type heavily doped
region2 and polysilicon gate 5 are isolated by
gate oxide6;
Metallization anode1 is positioned at the device top layer, covers all P type heavily doped
regions3, N-type heavily doped
region2,
gate oxide6 and polysilicon gate 5.
The diode of described low forward voltage drop adopts N-type accumulation type MOSFET, and the drain electrode of this N-type accumulation type MOSFET and polysilicon gate 5 utmost point short circuits form the
anode1 of low forward voltage drop diode, N jointly +
substrate7 forms the
negative electrode8 of low forward diode.N wherein +the drain electrode that heavily doped
region2 is MOSFET, the grid that polysilicon gate 5 is MOSFET, N +the source electrode that
substrate7 is MOSFET.
The diode of described low forward voltage drop, N +heavily doped
region2, N-type
light doping section9, N -
epitaxial region4 and N +substrate 7 forms the electronics path of N-type accumulation type MOSFET.P type heavily doped
region3 and N -
epitaxial region4 and N +substrate 7 forms diode structure.
The diode of described low forward voltage drop, the channel length of N-type accumulation type MOSFET is by N +heavily doped
region2 and N -n-type
light doping section9 length that epitaxial region is 4 determine.
P type heavily doped
region3 and the N of the diode of described low forward voltage drop +the difference of the junction depth of heavily doped
region2 can be different from N-type
light doping section9 junction depths, and N-type
light doping section9 junction depths can require flexible according to withstand voltage and cut-in voltage.
Diode P type heavily doped
region3 doping contents of described low forward voltage drop are higher, are greater than 5 * 10 17cm -, can directly form heavily doped ohmic contact on the one hand, can provide a large amount of holes on the other hand.
The diode of described low forward voltage drop is at N -n is introduced at
epitaxial loayer4 tops +heavily doped
region2, the drain electrode for MOSFET, provide electronics, forms electronic current.
The degree of depth and the concentration of the N-type light doping section that the diode of described low forward voltage drop can be adjusted according to the requirement of different voltage and currents.
The diode of described low forward voltage drop adopts slot grid structure, the longitudinal channel of formation, and channel length is easy to control, and it is less that structure cell can be done, and saves device area.
By the MEDICI simulation software, the diode of provided low forward voltage drop is as shown in Figure 1 carried out to emulation, half structure cell of emulation, the emulation device parameters is: P type heavily doped
region3 concentration are: 1 * 10 19cm -3, from
top metal anode8 to P type heavily doped
region3 bottom thickness, be 2.0 μ m; N +heavily doped
region2 concentration are: 1 * 10 20cm -3, thickness is 0.2 μ m; N-type
light doping section9 width are: 0.12 μ m; Left
side gate oxide6 thickness are: 0.04 μ m, and
downside gate oxide6 thickness are: 0.04 μ m; N -epitaxial layer concentration is: 2.5 * 10 15cm -3, from P type heavily doped
region3 bottoms to N +the
substrate7 top degree of depth are: 10 μ m; N +substrate zone 7 doping contents are: 2.5 * 10 20cm -3, thickness is: 0.5 μ m; Half cellular width of emulation is: 1.44 μ m.
Operation principle of the present invention can be described below:
The diode component of described low forward voltage drop can adopt the structures such as groove grid, planar gate, and the operation principle of these structures is all similar.
N +heavily doped
region2 provides electronics, assisted depletion N light doping section 9.The formation longitudinal channel is once injected in the heavy doping of P type, the degree of depth that channel length is P type heavily doped region 3.P type heavily doped
region3, when forming the heavy doping ohmic contact, provides a large amount of holes.The present invention adopts N-type accumulation type MOSFET, N +the drain electrode that heavily doped
region2 is MOSFET, the grid that polysilicon gate 5 is MOSFET, N +the source electrode that
substrate zone7 is MOSFET.Drain electrode and the polysilicon gate short circuit of this N-type accumulation type MOSFET, form the
anode1 of low forward voltage drop diode, N jointly +substrate forms the
negative electrode8 of low forward diode.When
metal anode1 adds very little malleation, during
metallic cathode8 ground connection, N +heavily doped
region2 and N -
epitaxial loayer4 is connected, and forms conducting channel.P type heavily doped
region3 adds malleation, and the tagma of N-type accumulation type MOSFET connects high potential, the N be connected with
metallic cathode8 -
epitaxial loayer4 does not pressurize, and the source region of MOSFET is electronegative potential, body source voltage V bSfor just, from bulk effect, the threshold voltage absolute value is larger while than body source voltage, being zero, and it is many that the electric charge in the accumulation type raceway groove becomes, and On current increases, at two N +heavily doped
region2 belows and
gate oxide6 bottoms and N -
epitaxial loayer4 interfaces form the thin layer of electron accumulation, and this is conducive to further reduce the cut-in voltage of device.Work as forward bias and be less than P type heavily doped
region3 and N +during the barrier voltage of the parasitic PN junction between heavily doped
region2, N-type accumulation type MOSFET also can open, and device is in the forward conduction state, so the required cut-in voltage of the diode of low forward voltage drop is lower.
P +heavily doped
region3, N -
epitaxial region4 and N +substrate 7 forms respectively P district, I district, the N district of PIN diode, and along with the increase of applied voltage, the P district in the PIN structure and the electromotive force between the N district are greater than the Built-in potential of PiN diode, P +heavily doped
region3 is to N -
epitaxial region4 injected holes, N simultaneously -
epitaxial region4 is to P +heavily doped
region3 injected holes, the PiN diode is opened, and makes device have a large amount of electric currents to flow through.
When additional reverse bias, there is electrical potential difference between negative electrode and anode, by P type heavily doped
region3 and N -the PN junction that
epitaxial loayer4 forms starts to exhaust.The doping content of P type heavily doped
region3 is much larger than N -the doping content of
epitaxial loayer4, anti-depletion layer partially is mainly to N -
epitaxial loayer4 expansions, the heavy ability doped
region3 of P type exhausts N -epitaxial loayer 4.PN junction exhausts fast, bears reversed bias voltage, and the reverse leakage current that superpotential is built diode is determined by PN junction, can greatly reduce the size of reverse leakage current.
Fig. 2 is the diode component planar gate structure of a kind of low forward voltage drop provided by the invention.Wherein polysilicon gate 5 and
gate oxide6 are made in top device, form planar gate structure.The formation lateral channel of device, channel length is determined by the width of N-type
light doping section9, obtaining under same puncture voltage, the P type heavily doped
region3 that this structure need to be longer, the required Area comparison of device is large.
Fig. 3 is a kind of extended structure of the diode of low forward voltage drop provided by the invention, wherein N -
epitaxial loayer4 and N +also there is N-
type buffering area11 between substrate 7.Equally, this extended structure also can be made planar structure.
Fig. 4 is another kind extended structure of the diode of low forward voltage drop provided by the invention, changes N-type
light doping section9 of the present invention in Fig. 1 into p type island region 10.P type heavily doped
region3 and the common formation subregion of p type island region 10 P trap, can be according to different voltage and current requirements, and the degree of depth and the concentration of adjusting subregion P trap meet the demands, and p type island region can inject and obtain by boron.This extended structure also can be made planar structure.
Fig. 5 is the planar gate structure of extended structure in Fig. 4.Wherein polysilicon gate 5 and
gate oxide6 are made in top device, form planar gate structure.The formation lateral channel of device, channel length is determined by the width of P type
light doping section10, obtaining under same puncture voltage, the P type heavily doped
region3 that this structure need to be longer, the required Area comparison of device is large.
Fig. 6 is the diode component emulation schematic diagram of low forward voltage drop provided by the invention.
Fig. 7 is schottky diode device emulation schematic diagram.Top device adopts Schottky contacts, and work function is 4.9.N extension concentration is 2.5 * 10 15cm -3, thickness is 10 μ m.
Fig. 8 is PiN diode component emulation schematic diagram.Device N extension concentration is 2.5 * 10 15cm -3, thickness is 10 μ m.
Fig. 9 is in identical N extension concentration (2.5 * 10 15cm -3) and the comparison of the diode of the lower low forward voltage drop provided by the invention of thickness (10 μ m) and diode, Schottky power diode forward curve.Because the unlatching of the diode of low forward voltage drop is mainly that raceway groove conducting by N-type accumulation type MOSFET but electric current pass through, so cut-in voltage is lower.By contrast, can find out, the cut-in voltage of the diode of low forward voltage drop provided by the invention is about 2.5V, obviously is better than the forward characteristic of PiN diode and Schottky diode.
Figure 10 is in identical N extension concentration (2.5 * 10 15cm -3) and the comparison of the diode of the lower low forward voltage drop provided by the invention of thickness (10 μ m) and PiN diode, Schottky power diode reverse leakage current.The diode of low forward voltage drop provided by the present invention when OFF state, by anti-PN junction partially exhaust bear withstand voltagely, reduced the reverse leakage current of diode.
Claims (7)
1. the diode of a low forward voltage drop, is characterized in that: comprise N +substrate (7), metallization negative electrode (8) is by N +substrate (7) is drawn, N +above substrate (7), be N -epitaxial loayer (4); N -epitaxial loayer (4) top has a P type heavily doped region (3), and a side of P type heavily doped region (3) has N +heavily doped region (2), wherein the degree of depth of P type heavily doped region (3) is greater than N +the degree of depth of heavily doped region (2); One side of P type heavily doped region (3) also has a N-type light doping section (9), described N +heavily doped region (2) is adjacent with N-type light doping section (9); P type heavily doped region (3) and N -epitaxial loayer (4) forms PN junction; N -epitaxial loayer (4) top has the polygate electrodes (5) with its isolation by gate oxide (6), N +heavily doped region (2) and N-type light doping section (9) are by gate oxide (6) and polysilicon gate (5) isolation; Metallization anode (1) is positioned at top device, covers all P type heavily doped regions (3), N +heavily doped region (2), gate oxide (6) and polysilicon gate (5).
2. the diode of low forward voltage drop as claimed in claim 1, is characterized in that: N +heavily doped region (2), N-type light doping section (9), N -epitaxial region (4) and N +substrate (7) forms the electronics path of N-type accumulation type MOSFET; P type heavily doped region (3) and N -epitaxial region (4) and N +substrate (7) forms the PiN diode structure.
3. the diode of low forward voltage drop as claimed in claim 2, it is characterized in that: described N-type accumulation type MOSFET channel length is by N +heavily doped region (2) and N -n-type light doping section (9) length between epitaxial region (4) determines.
4. the diode of low forward voltage drop as claimed in claim 1 or 2, is characterized in that: P type heavily doped region (3) and N +the difference of the junction depth of heavily doped region (2) and N-type light doping section (9) junction depth are identical or different, and N-type light doping section (9) junction depth requires to regulate according to withstand voltage and cut-in voltage.
5. as the diode of claim 1,2 or 3 described low forward voltage drops, it is characterized in that: described P type heavily doped region (3) doping content is greater than 5 * 10 17cm -3.
6. the diode of low forward voltage drop as claimed in claim 1 or 2, is characterized in that: described N -epitaxial loayer (4) and N +also there is N-type buffering area (11) between substrate (7).
7. the diode of low forward voltage drop as claimed in claim 1, it is characterized in that: described N-type light doping section (9) replaces with as p type island region (10), P type heavily doped region (3) and p type island region (10) form subregion P trap jointly, meet different voltage and current requirements by the degree of depth and the concentration of adjusting subregion P trap, described p type island region (10) comprises that by injection the acceptor impurity of boron obtains.
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Cited By (6)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393055A (en) * | 2014-11-10 | 2015-03-04 | 电子科技大学 | Grooved diode with floating island structure |
| CN111403428A (en) * | 2020-03-23 | 2020-07-10 | 中山大学 | Photoelectric sensor, random-readable active pixel circuit, image sensor, and camera device |
| CN112349772A (en) * | 2020-11-05 | 2021-02-09 | 北京工业大学 | Accumulation type MOS channel diode structure |
| CN112992834A (en) * | 2021-02-09 | 2021-06-18 | 捷捷微电(上海)科技有限公司 | Advanced diode packaging structure with indirect electrical connection of source and grid |
| CN116190420A (en) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
| CN111403428B (en) * | 2020-03-23 | 2025-03-28 | 佛山眼图科技有限公司 | Photoelectric sensors, random readout active pixel circuits, image sensors and camera devices |
Citations (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478302A (en) * | 2000-10-03 | 2004-02-25 | ���﹫˾ | Short-channel silicon carbide power MOSFETS and manufacturing method thereof |
| US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
| CN102184939A (en) * | 2011-03-28 | 2011-09-14 | 电子科技大学 | Semiconductor power device with high-K medium tank |
| WO2012083590A1 (en) * | 2010-12-20 | 2012-06-28 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
| CN102544114A (en) * | 2012-02-29 | 2012-07-04 | 电子科技大学 | Accumulation type grooved-gate diode |
-
2013
- 2013-08-27 CN CN201310380184.4A patent/CN103441151B/en active Active
Patent Citations (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478302A (en) * | 2000-10-03 | 2004-02-25 | ���﹫˾ | Short-channel silicon carbide power MOSFETS and manufacturing method thereof |
| US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
| WO2012083590A1 (en) * | 2010-12-20 | 2012-06-28 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
| CN102184939A (en) * | 2011-03-28 | 2011-09-14 | 电子科技大学 | Semiconductor power device with high-K medium tank |
| CN102544114A (en) * | 2012-02-29 | 2012-07-04 | 电子科技大学 | Accumulation type grooved-gate diode |
Cited By (8)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393055A (en) * | 2014-11-10 | 2015-03-04 | 电子科技大学 | Grooved diode with floating island structure |
| CN104393055B (en) * | 2014-11-10 | 2017-03-15 | 电子科技大学 | A kind of groove-shaped diode with chinampa structure |
| CN111403428A (en) * | 2020-03-23 | 2020-07-10 | 中山大学 | Photoelectric sensor, random-readable active pixel circuit, image sensor, and camera device |
| CN111403428B (en) * | 2020-03-23 | 2025-03-28 | 佛山眼图科技有限公司 | Photoelectric sensors, random readout active pixel circuits, image sensors and camera devices |
| CN112349772A (en) * | 2020-11-05 | 2021-02-09 | 北京工业大学 | Accumulation type MOS channel diode structure |
| CN112992834A (en) * | 2021-02-09 | 2021-06-18 | 捷捷微电(上海)科技有限公司 | Advanced diode packaging structure with indirect electrical connection of source and grid |
| CN116190420A (en) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
| CN116190420B (en) * | 2023-02-24 | 2024-03-26 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
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Address after: 518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Patentee after: Shenzhen Xinmao Microelectronics Co.,Ltd. Address before: 214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi Patentee before: Wuxi Chip Hope Micro-Electronics Ltd. |
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Correction item: Patentee|Address Correct: Wuxi Chip Hope Micro-Electronics Ltd.|214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi False: Shenzhen core Dms Microelectronic Ltd|518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Number: 36-02 Volume: 33 |
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Address after: 518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Patentee after: SHENZHEN CHIP HOPE MICRO-ELECTRONICS Ltd. Address before: 214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi Patentee before: Wuxi Chip Hope Micro-Electronics Ltd. |
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Address after: 518129 Guangdong Shenzhen Luohu District Qingshui River street Qingshui River road 116 No. 1 deep 15 tower Patentee after: SHENZHEN CHIP HOPE MICRO-ELECTRONICS Ltd. Address before: 518129 No. 201-29, Rong Hing mansion, Regal Garden, 1007 Longgang section, Bantian District, Shenzhen, Guangdong. Patentee before: SHENZHEN CHIP HOPE MICRO-ELECTRONICS Ltd. |