CN103466538A - Infrared and millimeter wave frequency division micro nano structure film device - Google Patents
- ️Wed Dec 25 2013
CN103466538A - Infrared and millimeter wave frequency division micro nano structure film device - Google Patents
Infrared and millimeter wave frequency division micro nano structure film device Download PDFInfo
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- CN103466538A CN103466538A CN201310407841XA CN201310407841A CN103466538A CN 103466538 A CN103466538 A CN 103466538A CN 201310407841X A CN201310407841X A CN 201310407841XA CN 201310407841 A CN201310407841 A CN 201310407841A CN 103466538 A CN103466538 A CN 103466538A Authority
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- infrared
- millimeter wave
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Abstract
The invention relates to an infrared and millimeter wave frequency division micro nano structure film device and belongs to the technical field of vacuum film coating. A micro nano multilayer film structure is adopted to design an infrared and millimeter wave frequency division device, the thickness design of three kinds of films and substrates forming the device meets the electromagnetic wave interference condition, the film device of the micro nano structure can achieve infrared band high reflection and millimeter wave transmission, the films are low in surface roughness, fewer in layer, small in physical thickness, small in film integral stress, low in cost and easy to manufacture.
Description
Technical field
The present invention relates to technical field of vacuum plating, be specifically related to a kind of infrared and millimeter wave frequency division micro nano structure thin-film device.
Background technology
Along with the development of multi-mode complex probe and imaging technique, it is one of important directions of development at present that infrared and millimeter wave is total to the bore Detection Techniques.Bore is compound altogether is the system of common bore that infrared system and millimeter wave antenna are designed to for infrared and millimeter wave, can launch the millimeter wave energy, hold concurrently simultaneously and receive infrared and millimeter wave backward energy, then by common bore discrete device, by infrared, with millimeter wave, transfer to respectively Infrared Detectors and millimeter wave receiver.In this technology, by the infrared device separated with millimeter wave, be one of critical component, the infrared electromagnetism spectral coverage with two high spans of millimeter wave can be separated, adopting thin film technique is unique scheme.The structure of optical thin film is generally micro-nano-scale, after reaching electromagnetic interference condition, can realize frequency separation and the amplitude adjustment of electromagnetic spectral band.
At home and abroad in the research and design of Infrared/Millimeter Waves frequency division device, mainly with three kinds of methods, realize infrared and millimeter wave frequency division: the first is the medium infrared reflection film, it has mainly utilized the performance of dielectric thin-film material in the millimeter wave transmission, combination by high low refractive index film realizes the height reflection at infrared band, its shortcoming is film than thick and stress is large, easily breaks; The second is the frequency-selective surfaces on foam substrate, the layering directrix plane structure formed by certain specific distribution mode periodic arrangement by a large amount of parasitic elements, electromagnetic transmission and reflecting properties are had good selective, its shortcoming is that the surface made is not as medium infrared film smooth surface, causes infrared reflectivity to be difficult for improving; The third is the method that adopts diffraction optical element, the a large amount of diffraction grating in the device surface etching of millimeter wave transmission, realize the reflection of infrared band, this method has that volume is little, efficiency is high, design flexibility is large and the characteristics such as easy of integration, high and higher to the required precision of process equipment but it designs and produces cost.
Therefore, how to design a kind of infrared and millimeter-wave frequency discrete device, should guarantee the transmitance of infrared reflectivity and millimere-wave band, meet again thin being easy to of thicknesses of layers and prepare, lower-cost requirement, become technical problem urgently to be resolved hurrily.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: how to design a kind of transmitance that can guarantee infrared reflectivity and millimere-wave band, can meet again thicknesses of layers thin, be easy to preparation, the low infrared and millimeter-wave frequency discrete device required of cost.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of infrared and millimeter wave frequency division micro nano structure thin-film device, described device comprises substrate, first medium film, metallic film and second medium film from bottom to top; The thickness of described substrate is (4.25/n) mm, and n means the refractive index of the material of substrate in millimere-wave band; Described first medium film is identical with the thickness of second medium film, is 20～50nm; The design considerations of described metallic film minimum thickness is: guarantee that infrared waves can not be transmitted to the interface of described metallic film and first medium film; Described infrared waves is realized infraredly with millimeter-wave frequency, separating from the upper surface incident of described second medium film.
Preferably, the material of described substrate is the material transparent in millimere-wave band.
Preferably, the material of described substrate is pottery, zinc sulphide, sapphire or vitreous silica.
Preferably, n means the refractive index of base material at the 8.5mm ripple.
Preferably, the material of described first medium film is Al 2o 3or ZnS, the material of described second medium film is identical with the first medium film.
Preferably, the material of described metallic film is gold or silver-colored, and thickness is [100,150] nm.
Preferably, be coated with medium-wave infrared conducting film in described substrate.
(3) beneficial effect
The present invention adopts micro-nano multi-layer film structure to design a kind of infrared and millimeter-wave frequency discrete device, form three kinds of films of this device and the physical thickness design of substrate and meet the electromagnetic wave interference condition, make the thin-film device of this micro nano structure can realize the high reflection of infrared band and millimeter wave transmission, and the surface roughness of film is low, the few physical thickness of the number of plies is little, the integrated stress of film is little, and cost is low, is easy to make.
The accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
The structural representation that Fig. 2 is the embodiment of the
present invention1;
The infrared band reflectance spectrum figure of Fig. 3 for the embodiment of the
present invention1 is measured;
The millimeter wave transmitance spectrogram of Fig. 4 for the embodiment of the
present invention1 is measured;
The structural representation that Fig. 5 is the embodiment of the
present invention2;
The infrared band reflectance spectrum figure of Fig. 6 for the embodiment of the
present invention2 is measured;
The millimeter wave transmitance spectrogram of Fig. 7 for the embodiment of the
present invention2 is measured.
The specific embodiment
For making purpose of the present invention, content and advantage clearer, below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.
Consult Fig. 1, the invention provides a kind of infrared and millimeter wave frequency division micro nano structure thin-film device, described device comprises
substrate0,
first medium film1,
metallic film2 and
second medium film3 from bottom to top; The thickness of described
substrate0 is (4.25/n) mm, and n means the refractive index of the material of
substrate0 at the 8.5mm ripple; Described
first medium film1 is identical with the thickness of
second medium film3, is 20～50nm; The design considerations of the minimum thickness of described
metallic film2 is: guarantee that infrared waves can not be transmitted to the interface of described
metallic film2 and
first medium film1, its thickness is determined by infrared reflectivity.Be coated with medium-wave infrared conducting film in described substrate.
Described infrared waves is realized infraredly with millimeter-wave frequency, separating from the upper surface incident of described
second medium film3, infrared waves incident is from top incident, because the minimum thickness of the thickness of metal film of selecting guarantees that infrared light can not be transmitted to the interface of metallic film and first medium film, therefore reflection only occurs in air-first medium film, two interfaces of first medium film-metallic film, light amplitude stack at two boundary reflections, produce the reflection interference enhancement effect.
The material of described
substrate0 is the material transparent in millimere-wave band, can be pottery, zinc sulphide, sapphire or vitreous silica.
The transition zone that described first medium film is metallic film and substrate, strengthen the adhesive force between metallic film and substrate, and material is Al 2o 3or ZnS.The second medium film is diaphragm, is mainly used in preventing the oxidation of metallic film.
The material of described metallic film is gold or silver-colored, and thickness is [100,150] nm.
In the present embodiment, infrared and millimeter wave frequency division micro nano structure is shown in Fig. 2, and
substrate4 materials are vitreous silica, and the thickness of substrate is chosen as 4.71mm;
In the present embodiment,
first medium film5 is chosen as Al 2o 3, the thickness of film is 20nm;
In the present embodiment,
metallic film6 is chosen as golden film, and thickness is 100nm;
In the present embodiment,
second medium film7 is selected material and the thickness identical with
first medium film5.
Adopt electron beam evaporation ion assisted deposition technology, infraredly be prepared with millimeter wave frequency division micro nano structure aforesaid.Infrared band measurement result after preparation is consulted Fig. 3, and near the measurement result 8.5mm ripple is consulted Fig. 4, and surface roughness is 1.37nm, and film layer structure integral body presents tensile stress, and stress in thin film is 20.8MPa.
In the present embodiment, infrared and millimeter wave frequency division micro nano structure is shown in Fig. 5, and
substrate8 materials are vitreous silica, and the thickness of substrate is chosen as 4.71mm;
In the present embodiment,
first medium film9 is chosen as ZnS, and the thickness of film is 25nm;
In the present embodiment,
metallic film10 is chosen as silverskin, and thickness is 110nm;
In the present embodiment,
second medium film11 is selected material and the thickness identical with the first medium film.
Adopt electron beam evaporation ion assisted deposition technology, infraredly be prepared with millimeter wave frequency division micro nano structure aforesaid.Infrared band measurement result after preparation is consulted Fig. 6, and near the measurement result 8.5mm ripple is consulted Fig. 7, and surface roughness is 1.69nm, and film layer structure integral body presents tensile stress, and stress in thin film is 18.9MPa.
As can be seen from the above embodiments, the present invention adopts micro-nano multi-layer film structure to design a kind of infrared and millimeter-wave frequency discrete device, form three kinds of films of this device and the physical thickness design of substrate and meet the electromagnetic wave interference condition, make the thin-film device of this micro nano structure can realize the high reflection of infrared band (8um-14um) and millimeter wave transmission (8.5mm), and the surface roughness of film is low, the few physical thickness of the number of plies is little, the integrated stress of film is little, cost is low, is easy to make.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and distortion, these improvement and distortion also should be considered as protection scope of the present invention.
Claims (7)
1. one kind infrared and millimeter wave frequency division micro nano structure thin-film device, is characterized in that, described device comprises substrate, first medium film, metallic film and second medium film from bottom to top; The thickness of described substrate is (4.25/n) mm, and n means the refractive index of the material of substrate in millimere-wave band; Described first medium film is identical with the thickness of second medium film, is 20～50nm; The design considerations of described metallic film minimum thickness is: guarantee that infrared waves can not be transmitted to the interface of described metallic film and first medium film; Described infrared waves is realized infraredly with millimeter-wave frequency, separating from the upper surface incident of described second medium film.
2. device as claimed in claim 1, is characterized in that, the material of described substrate is the material transparent in millimere-wave band.
3. device as claimed in claim 2, is characterized in that, the material of described substrate is pottery, zinc sulphide, sapphire or vitreous silica.
4. device as claimed in claim 1, is characterized in that, n means the refractive index of base material at the 8.5mm ripple.
5. device as claimed in claim 1, is characterized in that, the material of described first medium film is Al 2o 3or ZnS, the material of described second medium film is identical with the first medium film.
6. device as claimed in claim 1, is characterized in that, the material of described metallic film is gold or silver-colored, and thickness is [100,150] nm.
7. device as described as any one in claim 1～6, is characterized in that, in described substrate, is coated with medium-wave infrared conducting film.
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| CN201310407841.XA CN103466538B (en) | 2013-09-10 | 2013-09-10 | A kind of infrared with millimeter wave frequency division micro nano structure thin-film device |
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| CN201310407841.XA CN103466538B (en) | 2013-09-10 | 2013-09-10 | A kind of infrared with millimeter wave frequency division micro nano structure thin-film device |
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| US20030128430A1 (en) * | 2002-01-08 | 2003-07-10 | Charles Leu | Indium-tin oxide thin film filter for dense wavelength division multiplexing |
| CN101261333A (en) * | 2008-04-03 | 2008-09-10 | 浙江大学 | All-angle transmission filter composed of metal dielectric periodic film |
| CN101446660A (en) * | 2008-12-24 | 2009-06-03 | 中国兵器工业第二〇五研究所 | Spectrum color separation filter transmitting 0.45 to 1.6 Mum and opposing 8 to 12 Mum |
| CN202003044U (en) * | 2011-02-28 | 2011-10-05 | 中国航天科工集团第三研究院第八三五八研究所 | Reflecting film layer |
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2013
- 2013-09-10 CN CN201310407841.XA patent/CN103466538B/en active Active
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| CN1425555A (en) * | 2001-12-14 | 2003-06-25 | 张会琴 | Transparent metal dielectric composite material |
| US20030128430A1 (en) * | 2002-01-08 | 2003-07-10 | Charles Leu | Indium-tin oxide thin film filter for dense wavelength division multiplexing |
| CN101261333A (en) * | 2008-04-03 | 2008-09-10 | 浙江大学 | All-angle transmission filter composed of metal dielectric periodic film |
| CN101446660A (en) * | 2008-12-24 | 2009-06-03 | 中国兵器工业第二〇五研究所 | Spectrum color separation filter transmitting 0.45 to 1.6 Mum and opposing 8 to 12 Mum |
| CN202003044U (en) * | 2011-02-28 | 2011-10-05 | 中国航天科工集团第三研究院第八三五八研究所 | Reflecting film layer |
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