CN103645770A - CMOS integrated temperature sensor circuit - Google Patents
- ️Wed Mar 19 2014
CN103645770A - CMOS integrated temperature sensor circuit - Google Patents
CMOS integrated temperature sensor circuit Download PDFInfo
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- CN103645770A CN103645770A CN201310636808.4A CN201310636808A CN103645770A CN 103645770 A CN103645770 A CN 103645770A CN 201310636808 A CN201310636808 A CN 201310636808A CN 103645770 A CN103645770 A CN 103645770A Authority
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Abstract
The invention discloses a CMOS integrated temperature sensor circuit. The sensor circuit comprises a positive-temperature-coefficient current generating circuit, a current mirror, a current control oscillator and a counter. The positive-temperature-coefficient current generating circuit is connected with an external power supply and generates a current which is directly proportional to the absolute temperature. The current mirror conducts mirror image copy on a positive-temperature-coefficient current to form multiple routes of currents with the same temperature coefficient. The circuit control oscillator conducts oscillation under control of the multiple routes of currents with the same temperature coefficient, and outputs a vibration signal which is directly proportional to the absolute temperature. The counter is used for conducting counting on the vibration signal and outputting the count result. According to the CMOS integrated temperature sensor circuit, the oscillator is controlled to conduct vibration through the current which is directly proportional to the absolute current so as to generate a periodic signal which has an accurate direct proportion relation with the absolute temperature, and therefore accurate temperature information can be obtained. According to the CMOS integrated temperature sensor circuit, the accuracy of a temperature sensor can be effectively improved, and the CMOS integrated temperature sensor circuit is simple in structure and completely compatible with the CMOS process.
Description
Technical field
The present invention relates to CMOS integrated sensor field, relate in particular to a kind of CMOS integrated temperature sensor circuit.
Background technology
Sensor is infrastructure device the most basic in Internet of Things development, the bottom, and object, environment etc. is carried out apperceive identity, completes the key effect of information acquisition.Temperature sensor is one of the most basic sensor type, in commercial production, scientific research and sphere of life, be widely used, especially be applied in all kinds of smart cards and RFID (Radio Frequency Identification, radio-frequency (RF) identification) in label, accurately perception environment temperature of living in, is a gordian technique.All kinds of smart cards of main flow and RFID label all adopt CMOS technique to realize at present, and temperature sensor that can be completely compatible with CMOS technique, due to the mismatch of all kinds of devices, cannot be realized the accurate detection to temperature.
Summary of the invention
For realizing high-precision CMOS integrated temperature sensor, the invention provides a kind of CMOS integrated temperature sensor circuit, can export a digital signal being directly proportional to absolute temperature, provide the high precision of temperature is detected.
A kind of CMOS integrated temperature sensor circuit of the present invention, comprises positive temperature coefficient (PTC) current generating circuit, current mirror, current control oscillator circuit and counting circuit.
Described positive temperature coefficient (PTC) current generating circuit is connected with external power source, the first bias current and the second bias current that output is directly proportional to absolute temperature;
Described current mirror carries out ratio to described the first bias current and the second bias current to be copied, and obtains the synthermal coefficient of described multichannel and controls electric current;
The synthermal coefficient of described multichannel is controlled electric current and is inputted described current control oscillator, the cyclical signal that described current control oscillator output frequency is directly proportional to input control electric current;
Described counting circuit is counted the cyclical signal of described current control oscillator output.
The present invention can export the count value being directly proportional to absolute temperature, through converting, can obtain accurate ambient temperature information.
Accompanying drawing explanation
Fig. 1 is the theory diagram of CMOS integrated temperature sensor of the present invention
Fig. 2 is the more preferably circuit theory diagrams of embodiment of CMOS integrated temperature sensor of the present invention
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described further.
Fig. 1 is the structural drawing of a kind of CMOS integrated temperature sensor of the present invention.As shown in Figure 1, CMOS integrated temperature sensor of the present invention consists of positive temperature coefficient (PTC) current generating circuit 1,
current mirroring circuit2, current control oscillator 3 and counting circuit.Wherein positive temperature coefficient (PTC) current generating circuit 1 results from the bias current that absolute temperature is directly proportional, and this bias current, after
current mirroring circuit2 mirror images, obtains the synthermal coefficient control electric current that multichannel is directly proportional to absolute temperature.The synthermal coefficient of multichannel that
current mirroring circuit2 is produced is controlled in electric current access current control oscillator circuit 3, produces the certain cyclical signal of frequency, and this cyclical signal frequency is directly proportional to input control electric current, and then is directly proportional to absolute temperature.Utilize the cyclical signal of 4 pairs of current control oscillator circuit of counting circuit, 3 outputs to count, this count value size is directly proportional to absolute temperature, by counting duration is regulated, can improve the precision of temperature detection.
Figure 2 shows that the more preferably circuit theory diagrams of embodiment of CMOS integrated temperature sensor of the present invention.As shown in Figure 2, positive temperature coefficient (PTC) current generating circuit 1 comprises PMOS pipe PM1, PM2, resistance R 1, PNP triode Q1, Q2 and operational amplifier U1.The emitter of PNP triode Q1, Q2 is all connected with base stage, receives ground; PNP triode Q1 collector is connected with operational amplifier U1 one end, connects PMOS pipe PM1 drain electrode simultaneously; Resistance R 1 is connected between the PM2 drain electrode of PMOS pipe and PNP triode Q2 collector; The operational amplifier U1 other end is connected between resistance R 1 and PMOS pipe PM2 drain electrode; PMOS pipe PM1, PM2 are all connected with operational amplifier U1 output terminal; PMOS pipe PM1, PM2 source electrode and substrate are all connected with external power source.The first bias current (I1) is flowed out in PMOS pipe PM1 drain electrode, and the second bias current (I2) is flowed out in PMOS pipe PM2 drain electrode, and described the first bias current (I1) and the second bias current (I2) equate, and be directly proportional to absolute temperature.
In Fig. 2,
current mirroring circuit2 consists of PMOS pipe PM3, PM4, PM5, the grid of PMOS pipe PM3, PM4, PM5 is all connected with the output terminal of operational amplifier U1 in positive temperature coefficient (PTC) current generating circuit 1, PM3, PM4, PM5 source electrode and substrate are all connected with external power source, PM3 drain terminal output the 3rd bias current (I3), PM4 drain terminal output the 4th bias current (I4), PM5 drain terminal output the 5th bias current (I5).
In Fig. 2, current control oscillator circuit 3 is by Current Control phase inverter U2, U3, U4, and capacitor C 1, C2, C3 and phase inverter U5 form.Wherein Current Control phase inverter U2, U3, U4 join end to end, capacitor C 1 is connected between Current Control phase inverter U2 output terminal and ground,
capacitor C2 is connected between Current Control phase inverter U3 output terminal and ground, capacitor C 3 is connected between Current Control phase inverter U4 output terminal and ground, and phase inverter U5 input end is connected with Current Control phase inverter U4 output terminal.Current Control phase inverter U2, U3, U4 and capacitor C 1, C2, C3 form current control oscillator circuit, output cyclical signal frequency and the 3rd bias current I3, and the 4th bias current I4 and the 5th bias current I5 are directly proportional.Phase inverter U5 carries out shaping to above-mentioned cyclical signal.
In Fig. 2, the cyclical signal of 4 pairs of phase inverter U5 outputs of counting circuit is counted, and before each counting,
counting circuit4 is resetted.Each reset, a count results is upgraded in the output of counting circuit, restarts counting simultaneously, like this count value of counting circuit output just and temperature be directly proportional, thereby the accurate detection of realization to temperature.
By strengthening counter capacity, the prolongation gate time of counting circuit, can improve the temperature detecting precision of CMOS integrated temperature sensor of the present invention, be applied to high precision and detect occasion; Meanwhile, reduce current control oscillator circuit 3 oscillation frequency, reduce the size of current that positive temperature coefficient (PTC) current generating circuit 1 produces, can significantly reduce the power consumption of temperature sensor of the present invention, be applied to low-power consumption occasion.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all within principle of design of the present invention, technical scheme, any modification of making, be equal to replacement, improvement etc., be all included in protection domain of the present invention.
Claims (6)
1. a CMOS integrated temperature sensor circuit, is characterized in that, described temperature sensor circuit comprises positive temperature coefficient (PTC) current generating circuit, current mirror, current control oscillator circuit and counting circuit, wherein:
Described positive temperature coefficient (PTC) current generating circuit is connected with external power source, the electric current that output is directly proportional to absolute temperature;
Described current mirror copies the electric current being directly proportional to absolute temperature in proportion, the synthermal coefficient image current of multichannel that output is directly proportional to absolute temperature;
Described current control oscillator circuit is worked under the synthermal coefficient image current of described multichannel is controlled, the cyclical signal that output frequency is directly proportional, is directly proportional to absolute temperature to control electric current simultaneously;
Described counting circuit is counted the cyclical signal of described current control oscillator output, before each counting, counting circuit is resetted, a count results is upgraded in the output of counting circuit, restart counting simultaneously, thereby realize the accurate detection to temperature, this count value size is directly proportional to absolute temperature, by counting duration is regulated, improve the precision of temperature detection.
2. circuit according to claim 1, it is characterized in that, described positive temperature coefficient (PTC) current generating circuit comprises PNP triode Q1 and PNP triode Q2, resistance R 1, operational amplifier U1 and PMOS pipe PM1, PM2, and the emitter of PNP triode Q1, Q2 is all connected with base stage, receives ground; PNP triode Q1 collector is connected with operational amplifier U1 one end, connects PMOS pipe PM1 drain electrode simultaneously; Resistance R 1 is connected between the PM2 drain electrode of PMOS pipe and PNP triode Q2 collector; The operational amplifier U1 other end is connected between resistance R 1 and PMOS pipe PM2 drain electrode; PMOS pipe PM1, PM2 are all connected with operational amplifier U1 output terminal; PMOS pipe PM1, PM2 source electrode and substrate are all connected with external power source; The first bias current I1 is flowed out in PMOS pipe PM1 drain electrode, and the second bias current I2 is flowed out in PMOS pipe PM2 drain electrode, and described the first bias current I1 and the second bias current I2 equate, and be directly proportional to absolute temperature.
3. circuit according to claim 2, is characterized in that, the operational amplifier of described operational amplifier U1 for adopting CMOS technique to make.
4. circuit according to claim 2, it is characterized in that, the current mirror of described current mirroring circuit for adopting CMOS technique to make, described current mirror output multi-channel is controlled electric current, and described multichannel control electric current and described the first bias current I1, the second bias current I2 are proportional.
5. circuit according to claim 1, is characterized in that, described current control oscillator adopts a plurality of Current Control revertive delays unit formation that joins end to end, and described Current Control revertive delay element number is odd number.
6. circuit according to claim 5, is characterized in that, described Current Control revertive delay unit consists of Current Control phase inverter and electric capacity, and described electric capacity is connected between described Current Control inverter output and ground.
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| CN201310636808.4A CN103645770A (en) | 2013-12-03 | 2013-12-03 | CMOS integrated temperature sensor circuit |
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| CN201310636808.4A CN103645770A (en) | 2013-12-03 | 2013-12-03 | CMOS integrated temperature sensor circuit |
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Cited By (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107463200A (en) * | 2017-07-31 | 2017-12-12 | 苏州大学 | Temperature frequency change-over circuit on a kind of whole CMOS piece |
| CN111106829A (en) * | 2019-12-20 | 2020-05-05 | 睿兴科技(南京)有限公司 | High-precision ring oscillation circuit and micro control system |
| CN113049973A (en) * | 2021-06-02 | 2021-06-29 | 河南工学院 | A power battery detection device |
| CN113125024A (en) * | 2019-12-31 | 2021-07-16 | 钜泉光电科技(上海)股份有限公司 | Low-noise temperature detection circuit and method |
| CN113834578A (en) * | 2021-10-18 | 2021-12-24 | 英韧科技(上海)有限公司 | Temperature sensor circuit |
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* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
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Application publication date: 20140319 |