CN103684258A - Integrated low-noise voltage-controlled oscillator - Google Patents
- ️Wed Mar 26 2014
CN103684258A - Integrated low-noise voltage-controlled oscillator - Google Patents
Integrated low-noise voltage-controlled oscillator Download PDFInfo
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- CN103684258A CN103684258A CN201210360745.XA CN201210360745A CN103684258A CN 103684258 A CN103684258 A CN 103684258A CN 201210360745 A CN201210360745 A CN 201210360745A CN 103684258 A CN103684258 A CN 103684258A Authority
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Abstract
本发明提供一种集成低噪声压控振荡器，其中，电流源电路用于产生压控振荡器工作的电流；谐振电路用于产生压控振荡器的振荡信号；所述谐振电路为电感电容式谐振电路，其中的电容采用反向二极管；负阻电路用于产生负阻，以抵消所述谐振电路产生的正阻；所述反馈电路用于将所述谐振电路产生的振荡信号反馈给所述电流源电路，从而为电流源注入新的电流，提高压控振荡器的使用效率。并且，电流源电流采用第一MOS管和第二MOS管，由于第一MOS管和第二MOS管具有较小的阈值电压，因此使本发明实施例的压控振荡器具有更大的输出电压幅度。压控振荡器的输出电压幅度越大，其相位噪声性能便越好。
The invention provides an integrated low-noise voltage-controlled oscillator, wherein the current source circuit is used to generate the working current of the voltage-controlled oscillator; the resonant circuit is used to generate the oscillation signal of the voltage-controlled oscillator; the resonant circuit is an inductance-capacitor A resonant circuit, wherein the capacitor adopts a reverse diode; the negative resistance circuit is used to generate negative resistance to offset the positive resistance generated by the resonant circuit; the feedback circuit is used to feed back the oscillation signal generated by the resonant circuit to the The current source circuit injects new current into the current source and improves the efficiency of the voltage-controlled oscillator. Moreover, the current source uses the first MOS tube and the second MOS tube, and since the first MOS tube and the second MOS tube have a smaller threshold voltage, the voltage-controlled oscillator in the embodiment of the present invention has a larger output voltage amplitude. The larger the output voltage amplitude of a VCO, the better its phase noise performance.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of integrated low-noise voltage controlled oscillator.
Background technology
Voltage controlled oscillator (VCO, voltage-controlled oscillator) refers to that output frequency and input control voltage have the oscillating circuit of corresponding relation.
Voltage controlled oscillator is one of very important basic circuit in integrated circuit, and the implementation of its circuit mainly contains two kinds, is respectively annular voltage controlled oscillator (Ring VCO) and voltage controlled oscillator (LCVCO).Voltage controlled oscillator is widely used in clock synchronous (Clock Synchronization) circuit in microprocessor; Frequency synthesizer in wireless communication transceiver (Frequency Synthesizer); In clock recovery circuitry in optical fiber communication (CRC, Clock Recovery Circuit) and leggy sampling (Multi-phase Sampling) circuit.
Phase noise is one of major parameter of weighing voltage controlled oscillator performance.In most cases, the phase noise performance of voltage controlled oscillator is the main factor that affects integrated receiver sensitivity.The signal spectrum of desirable voltage controlled oscillator output is an impulse function, but owing to there being various noise sources in side circuit, the signal spectrum characteristic of voltage controlled oscillator output is all frequently to cover curve.
Noise source in voltage-controlled oscillator circuit can be divided into two large classes: device noise and external interference noise, and the former mainly comprises thermal noise and flicker noise; The latter mainly comprises substrate and power supply noise.The device noise of voltage controlled oscillator is mainly derived from series connection dead resistance, switch differential pair tube and the tail current source of on-chip inductor and variable capacitance.
Referring to Fig. 1, this figure is a kind of voltage controlled oscillator schematic diagram of the prior art.
The current source of the voltage controlled oscillator shown in Fig. 1 is by DC voltage control, as the voltage VBIAS in Fig. 1 controls triode Q0.
The minimum voltage of voltage controlled oscillator output (POUT and NOUT) is collector electrode-emitter voltage drop sum of two bipolar transistors (Q0 and Q1), because the junction voltage sum of two HBT is less, therefore causes voltage controlled oscillator to have less output.
Therefore, there is higher phase noise in the voltage controlled oscillator shown in Fig. 1, and phase noise performance is lower.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of integrated low-noise voltage controlled oscillator, has larger output voltage amplitude, can reduce the phase noise of whole circuit, improves phase noise performance.
The invention provides a kind of integrated low-noise voltage controlled oscillator, comprising: resonant circuit, negative resistance circuit, current source circuit and feedback circuit;
Described resonant circuit, for generation of the oscillator signal of voltage controlled oscillator, described resonant circuit is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described negative resistance circuit, for generation of negative resistance, the just resistance producing to offset described resonant circuit;
Described feedback circuit, feeds back to described current source circuit for the oscillator signal that described resonant circuit is produced;
Described current source circuit, the electric current for generation of voltage controlled oscillator work, comprising: the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 5th resistance, the 6th resistance, the 9th electric capacity and the tenth electric capacity;
The grid of described the first metal-oxide-semiconductor connects the 9th electric capacity of ground connection, the input of the first feedback signal that described grid is feedback circuit, the source ground of the first metal-oxide-semiconductor;
The grid of described the second metal-oxide-semiconductor connects the tenth electric capacity of ground connection, the input of the second feedback signal that described grid is feedback circuit, the source ground of the second metal-oxide-semiconductor;
The drain electrode of the drain electrode of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is joined, and the node joining is as the input of negative resistance circuit and the output phase contact of current source circuit;
One end of described the 5th resistance connects the grid of described the first metal-oxide-semiconductor, and the other end connects the 3rd and controls voltage;
One end of described the 6th resistance connects the grid of described the second metal-oxide-semiconductor, and the other end connects the 3rd and controls voltage.
Preferably, described resonant circuit comprises: differential inductance, the first backward diode, the second backward diode, the 3rd electric capacity, the 4th electric capacity, the first resistance, the second resistance;
One end of described differential inductance connects first node, and the other end connects Section Point;
The anodic bonding of described the first backward diode the 3rd node, negative electrode connects first and controls voltage;
The anodic bonding of described the second backward diode the 4th node, negative electrode connects described first and controls voltage;
One end of described the first resistance connects described the 3rd node, other end ground connection;
One end of described the second resistance connects described the 4th node, other end ground connection;
The two ends of described the 3rd electric capacity connect respectively described first node and the 3rd node, and the two ends of described the 4th electric capacity connect respectively described Section Point and the 4th node;
Described first node is the first-phase contact of described resonant circuit and negative resistance circuit, output the first resonance signal, and described Section Point is the second-phase contact of described resonant circuit and negative resistance circuit, output the second resonance signal.
Preferably, described negative resistance circuit comprises: the first bipolar transistor, the second bipolar transistor, the 3rd resistance, the 4th resistance, the 5th electric capacity, the 6th electric capacity and the 11 electric capacity;
The base stage of the first bipolar transistor connects the 5th node, and collector electrode connects first node, and described first node is the first-phase contact of described negative resistance circuit and resonant circuit;
The base stage of the second bipolar transistor connects the 6th node, and collector electrode connects Section Point, and described Section Point is the second-phase contact of described negative resistance circuit and resonant circuit;
The emitter of the emitter of described the first bipolar transistor and described the second bipolar transistor joins, and the node joining is as the input of described negative resistance circuit and the output phase contact of current source circuit;
One end of the 3rd resistance connects the 5th node, and the other end connects second and controls voltage;
One end of the 4th resistance connects the 6th node, and the other end connects second and controls voltage;
One end of the 5th electric capacity connects described first node, and the other end connects described the 6th node;
One end of the 6th electric capacity connects described Section Point, and the other end connects described the 5th node;
The two ends of the 11 electric capacity connect respectively described second and control voltage and ground.
Preferably,
Described feedback circuit comprises: the 7th electric capacity and the 8th electric capacity;
One end of described the 7th electric capacity connects the first output of resonant circuit, the other end connects the first signal input of current source circuit, the first resonance signal by described the 7th capacitive feedback to current source circuit, the first output that the other end of described the 7th electric capacity is voltage controlled oscillator;
One end of described the 8th electric capacity connects the second output of resonant circuit, the other end connects the secondary signal input of current source circuit, the second resonance signal by described the 8th capacitive feedback to current source circuit, the second output that the other end of described the 8th electric capacity is voltage controlled oscillator.
Preferably, the capacitance of described the 3rd electric capacity and the 4th electric capacity is than the capacitance of the first backward diode and the second backward diode at least large 10 times.
Preferably, described the first backward diode and the second backward diode work in reverse operation district.
Preferably, described the first bipolar transistor and the second bipolar transistor are in forward service area.
Preferably, described the first metal-oxide-semiconductor and the second metal-oxide-semiconductor are in saturation region.
Preferably, the capacitance of described the 7th electric capacity and described the 8th electric capacity is 1/10th of the first backward diode or the second backward diode capacitance.
Compared with prior art, the present invention has the following advantages:
In integrated low-noise voltage controlled oscillator provided by the invention, current source circuit is for generation of the electric current of voltage controlled oscillator work; Resonant circuit is for generation of the oscillator signal of voltage controlled oscillator; Described resonant circuit is inductance and capacitance type resonant circuit, and electric capacity wherein adopts backward diode; Negative resistance circuit is for generation of negative resistance, to offset the just resistance of described resonant circuit generation; Described feedback circuit feeds back to described current source circuit for the oscillator signal that described resonant circuit is produced, thereby for current source injects new electric current, improves the service efficiency of voltage controlled oscillator.And current source current adopts the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, because the first metal-oxide-semiconductor and the second metal-oxide-semiconductor have less threshold voltage, therefore make the voltage controlled oscillator of the embodiment of the present invention there is larger output voltage amplitude.The output voltage amplitude of voltage controlled oscillator is larger, and its phase noise performance is just better.
Accompanying drawing explanation
Fig. 1 is a kind of voltage controlled oscillator schematic diagram of the prior art;
Fig. 2 is integrated low-noise voltage controlled oscillator embodiment provided by the invention mono-schematic diagram;
Fig. 3 is integrated low-noise voltage controlled oscillator embodiment provided by the invention bis-schematic diagrames.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Referring to Fig. 2, this figure is the schematic diagram of integrated low-noise voltage controlled oscillator embodiment mono-provided by the invention.
The embodiment of the present invention provides a kind of integrated low-noise voltage controlled oscillator, comprising:
resonant circuit100,
negative resistance circuit200,
current source circuit300 and
feedback circuit400;
Described
resonant circuit100, for generation of the oscillator signal of voltage controlled oscillator, described
resonant circuit100 is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described
negative resistance circuit200, for generation of negative resistance, the just resistance producing to offset described
resonant circuit100;
Described
feedback circuit400, feeds back to described
current source circuit300 for the oscillator signal that described
resonant circuit100 is produced;
Described
current source circuit300, for generation of the electric current of voltage controlled oscillator work; Specifically comprise: the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 5th resistance R 5, the 6th resistance R 6, the 9th capacitor C 9 and the tenth capacitor C 10;
The grid of described the first metal-oxide-semiconductor M1 connects the 9th capacitor C 9 of ground connection, and described grid is the input of the first feedback signal of
feedback circuit400, the source ground of the first metal-oxide-semiconductor M1;
The grid of described the second metal-oxide-semiconductor M2 connects the tenth capacitor C 10 of ground connection, and described grid is the input of the second feedback signal of
feedback circuit400, the source ground of the second metal-oxide-semiconductor M2;
The drain electrode of the drain electrode of described the first metal-oxide-semiconductor M1 and described the second metal-oxide-semiconductor M2 is joined, and the node joining is as the input of
negative resistance circuit200 and the output phase contact of
current source circuit300;
One end of described the 5th resistance R 5 connects the grid of described the first metal-oxide-semiconductor M1, and the other end connects the 3rd and controls voltage VBIAS;
One end of described the 6th resistance R 6 connects the grid of described the second metal-oxide-semiconductor M2, and the other end connects the 3rd and controls voltage VBIAS.
It should be noted that, can make M1 and M2 in saturation region by controlling the 3rd voltage swing of controlling voltage VBIAS.
It should be noted that, C9 and C10 strobe, the high-frequency signal that filtering Q3 and Q4 produce.
In integrated low-noise voltage controlled oscillator provided by the invention,
current source circuit300 is for generation of the electric current of voltage controlled oscillator work;
Resonant circuit100 is for generation of the oscillator signal of voltage controlled oscillator; Described
resonant circuit100 is inductance and capacitance type resonant circuit, and electric capacity wherein adopts backward diode;
Negative resistance circuit200 is for generation of negative resistance, to offset the just resistance of described
resonant circuit100 generations; Described
feedback circuit400 feeds back to described
current source circuit300 for the oscillator signal that described
resonant circuit100 is produced, thereby is that
current source circuit300 injects new electric current, improves the service efficiency of voltage controlled oscillator.And current source current adopts the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, because the first metal-oxide-semiconductor and the second metal-oxide-semiconductor have less threshold voltage, therefore make the voltage controlled oscillator of the embodiment of the present invention there is larger output voltage amplitude.The output voltage amplitude of voltage controlled oscillator is larger, and its phase noise performance is just better.
Below in conjunction with accompanying drawing, introduce the concrete structure of the integrated low-noise voltage controlled oscillator that the embodiment of the present invention provides.
Referring to Fig. 3, this figure is the schematic diagram of integrated low-noise voltage controlled oscillator embodiment bis-provided by the invention.
The voltage controlled oscillator that the present embodiment provides, comprising: resonant circuit, negative resistance circuit, current source circuit and feedback circuit;
Described resonant circuit comprises: differential inductance L0, the first backward diode C1, the second backward diode C2, the 3rd capacitor C 3, the 4th capacitor C 4, the first resistance R 1, the second resistance R 2;
The tap of differential inductance L0 connects power supply.
One end of described differential inductance L0 connects first node A, and the other end connects Section Point B;
The anodic bonding of described the first backward diode C1 the 3rd node C, negative electrode connects first and controls voltage ATUNE;
The anodic bonding of described the second backward diode C2 the 4th node D, negative electrode connects described first and controls voltage ATUNE; This voltage controlled oscillator can be by regulating the size of the first control voltage ATUNE to regulate the operating frequency of voltage controlled oscillator.
One end of described the first resistance R 1 connects described the 3rd node C, other end ground connection;
One end of described the second resistance R 2 connects described the 4th node D, other end ground connection;
The two ends of described the 3rd capacitor C 3 connect respectively described first node A and the 3rd node C, and the two ends of described the 4th capacitor C 4 connect respectively described Section Point B and the 4th node D.
The first-phase contact that described first node A is described resonant circuit and negative resistance circuit, output the first resonance signal, the second-phase contact that described Section Point B is described resonant circuit and negative resistance circuit, output the second resonance signal.
It should be noted that, C1 and C2 work in reverse operation district.
At least large 10 times than the capacitance of the first backward diode C1 and the second backward diode C2 of the capacitances of described the 3rd capacitor C 3 and the 4th capacitor C 4, can guarantee that the voltage controlled oscillator that the embodiment of the present invention provides has wider frequency tuning range like this.
It should be noted that, the electric capacity in the resonant circuit of the embodiment of the present invention adopts backward diode (C1 and C2).Because backward diode works in reverse operation district, the electric capacity of backward diode, its capacitance size is less with the variation of the first control voltage ATUNE, thereby adopts the voltage controlled oscillator of backward diode to have less gain, therefore has good phase noise.
Described negative resistance circuit comprises: the first transistor bipolar transistor Q1, the second bipolar transistor Q2, the 3rd resistance R 3, the 4th resistance R 4, the 5th capacitor C 5, the 6th capacitor C the 6, the 11 capacitor C 11;
The base stage of the first bipolar transistor Q1 connects the 5th node M, and collector electrode connects first node A, the first-phase contact that described first node A is described negative resistance circuit and resonant circuit;
The base stage of the second bipolar transistor Q2 connects the 6th node N, and collector electrode connects Section Point B, the second-phase contact that described Section Point B is described negative resistance circuit and resonant circuit;
The emitter of the emitter of described the first bipolar transistor Q1 and described the second bipolar transistor Q2 joins, and the node joining is as the input of described negative resistance circuit and the output phase contact of current source circuit;
One end of the 3rd resistance R 3 connects the 5th node M, and the other end connects second and controls voltage CDC;
One end of the 4th resistance R 4 connects the 6th node N, and the other end connects second and controls voltage CDC;
One end of the 5th capacitor C 5 connects described first node A, and the other end connects described the 6th node N;
One end of the 6th capacitor C 6 connects described Section Point B, and the other end connects described the 5th node M;
The effect of the 5th capacitor C 5 and the 6th capacitor C 6 is mainly for isolated DC signal, assists Q1 and Q2 to realize the effect of negative resistance simultaneously, thereby compensates the just resistance that resonant circuit produces.
The two ends of the 11 capacitor C 11 connect respectively described second and control voltage CDC and ground.
It should be noted that, can guarantee that Q1 and Q2 are in forward service area by adjusting the second size of controlling voltage CDC.
It should be noted that, described Q1 and Q2 can be heterojunction bipolar transistor (HBT, Heterojunction Bipolar Transistor).
It should be noted that, described M1 and M2 can manage for NMOS.
Described feedback circuit comprises: the 7th capacitor C 7 and the 8th capacitor C 8;
One end of described the 7th capacitor C 7 connects first output (described first node A) of resonant circuit, the other end connects the first signal input of current source circuit, the first resonance signal feeds back to current source circuit by described the 7th capacitor C 7, the first output NOUT that the described other end of described the 7th capacitor C 7 is voltage controlled oscillator;
One end of described the 8th capacitor C 8 connects second output (described Section Point B) of resonant circuit, the other end connects the secondary signal input of current source circuit, the second resonance signal feeds back to current source circuit by described the 8th capacitor C 8, the second output POUT that the described other end of described the 8th capacitor C 8 is voltage controlled oscillator.
The effect of the 7th capacitor C 7 and the 8th capacitor C 8 is mainly isolated DC circuit, AC signal is fed back to current source circuit simultaneously, for current source circuit injects new electric current.Thereby the oscillator signal that resonant circuit is produced has carried out feedback utilization, can improve service efficiency like this.
It should be noted that, POUT and NOUT are two outputs of voltage controlled oscillator, and the oscillator signal of these two output outputs is all signals of positive voltage, but the phase place of the oscillator signal of POUT and NOUT output is contrary.
The capacitance of the 7th capacitor C 7 and the 8th capacitor C 8 be the first backward diode C1 and the second backward diode C2 capacitance 1/10th, thereby guarantee that this voltage controlled oscillator has wider frequency tuning range.
Below in conjunction with Fig. 3, describe the operation principle of voltage controlled oscillator provided by the invention in detail.
The phase noise of voltage controlled oscillator can be expressed as:
L { Δω } = 10 · log [ kT · R eff ( 1 + F ) ( ω 0 Δω ) 2 V max 2 / 2 ] - - - ( 1 )
Wherein F is empirical coefficient; K is Boltzmann constant; T is absolute temperature; Δ ω is with respect to carrier frequency ω 0deviation frequency; V maxvoltage amplitude for resonant circuit; R efffor effective resistance.It is pointed out that phase noise is less, the phase noise performance of voltage controlled oscillator is better.
The oscillator signal that resonant circuit and negative resistance resistance produce feeds back to the grid of M1 and M2 in current source circuit by the electric capacity in feedback circuit (C7 and C8).Under identical direct current biasing condition, the current source circuit of the voltage controlled oscillator that the embodiment of the present invention provides has less pressure drop than the current source circuit of voltage controlled oscillator in prior art, thereby makes the voltage controlled oscillator of the embodiment of the present invention have larger output voltage amplitude.
From formula (1), the output voltage amplitude of voltage controlled oscillator is larger, and its phase noise performance is just better.
The minimum output voltage of the voltage controlled oscillator that the embodiment of the present invention provides (POUT and NOUT voltage over the ground) is the threshold voltage of M1 or M2, thereby has increased the peak-to-peak value voltage of voltage controlled oscillator output, has improved the phase noise performance of voltage controlled oscillator.
Voltage controlled oscillator makes HBT(Q1 by feedback circuit) base voltage there is similar phase place with the grid voltage of metal-oxide-semiconductor (M2), and then make the electric current of voltage controlled oscillator reach minimum value in its noise sensitive area, thereby improved the phase noise performance of voltage controlled oscillator.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (9)
1. an integrated low-noise voltage controlled oscillator, is characterized in that, comprising: resonant circuit, negative resistance circuit, current source circuit and feedback circuit;
Described resonant circuit, for generation of the oscillator signal of voltage controlled oscillator, described resonant circuit is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described negative resistance circuit, for generation of negative resistance, the just resistance producing to offset described resonant circuit;
Described feedback circuit, feeds back to described current source circuit for the oscillator signal that described resonant circuit is produced;
Described current source circuit, the electric current for generation of voltage controlled oscillator work, comprising: the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 5th resistance, the 6th resistance, the 9th electric capacity and the tenth electric capacity;
The grid of described the first metal-oxide-semiconductor connects the 9th electric capacity of ground connection, the input of the first feedback signal that described grid is feedback circuit, the source ground of the first metal-oxide-semiconductor;
The grid of described the second metal-oxide-semiconductor connects the tenth electric capacity of ground connection, the input of the second feedback signal that described grid is feedback circuit, the source ground of the second metal-oxide-semiconductor;
The drain electrode of the drain electrode of described the first metal-oxide-semiconductor and described the second metal-oxide-semiconductor is joined, and the node joining is as the input of negative resistance circuit and the output phase contact of current source circuit;
One end of described the 5th resistance connects the grid of described the first metal-oxide-semiconductor, and the other end connects the 3rd and controls voltage;
One end of described the 6th resistance connects the grid of described the second metal-oxide-semiconductor, and the other end connects the 3rd and controls voltage.
2. integrated low-noise voltage controlled oscillator according to claim 1, is characterized in that, described resonant circuit comprises: differential inductance, the first backward diode, the second backward diode, the 3rd electric capacity, the 4th electric capacity, the first resistance, the second resistance;
One end of described differential inductance connects first node, and the other end connects Section Point;
The anodic bonding of described the first backward diode the 3rd node, negative electrode connects first and controls voltage;
The anodic bonding of described the second backward diode the 4th node, negative electrode connects described first and controls voltage;
One end of described the first resistance connects described the 3rd node, other end ground connection;
One end of described the second resistance connects described the 4th node, other end ground connection;
The two ends of described the 3rd electric capacity connect respectively described first node and the 3rd node, and the two ends of described the 4th electric capacity connect respectively described Section Point and the 4th node;
Described first node is the first-phase contact of described resonant circuit and negative resistance circuit, output the first resonance signal, and described Section Point is the second-phase contact of described resonant circuit and negative resistance circuit, output the second resonance signal.
3. integrated low-noise voltage controlled oscillator according to claim 1, is characterized in that, described negative resistance circuit comprises: the first bipolar transistor, the second bipolar transistor, the 3rd resistance, the 4th resistance, the 5th electric capacity, the 6th electric capacity and the 11 electric capacity;
The base stage of the first bipolar transistor connects the 5th node, and collector electrode connects first node, and described first node is the first-phase contact of described negative resistance circuit and resonant circuit;
The base stage of the second bipolar transistor connects the 6th node, and collector electrode connects Section Point, and described Section Point is the second-phase contact of described negative resistance circuit and resonant circuit;
The emitter of the emitter of described the first bipolar transistor and described the second bipolar transistor joins, and the node joining is as the input of described negative resistance circuit and the output phase contact of current source circuit;
One end of the 3rd resistance connects the 5th node, and the other end connects second and controls voltage;
One end of the 4th resistance connects the 6th node, and the other end connects second and controls voltage;
One end of the 5th electric capacity connects described first node, and the other end connects described the 6th node;
One end of the 6th electric capacity connects described Section Point, and the other end connects described the 5th node;
The two ends of the 11 electric capacity connect respectively described second and control voltage and ground.
4. integrated low-noise voltage controlled oscillator according to claim 1, is characterized in that,
Described feedback circuit comprises: the 7th electric capacity and the 8th electric capacity;
One end of described the 7th electric capacity connects the first output of resonant circuit, the other end connects the first signal input of current source circuit, the first resonance signal by described the 7th capacitive feedback to current source circuit, the first output that the other end of described the 7th electric capacity is voltage controlled oscillator;
One end of described the 8th electric capacity connects the second output of resonant circuit, the other end connects the secondary signal input of current source circuit, the second resonance signal by described the 8th capacitive feedback to current source circuit, the second output that the other end of described the 8th electric capacity is voltage controlled oscillator.
5. integrated low-noise voltage controlled oscillator according to claim 2, is characterized in that, at least large 10 times than the capacitance of the first backward diode and the second backward diode of the capacitances of described the 3rd electric capacity and the 4th electric capacity.
6. integrated low-noise voltage controlled oscillator according to claim 2, is characterized in that, described the first backward diode and the second backward diode work in reverse operation district.
7. integrated low-noise voltage controlled oscillator according to claim 3, is characterized in that, described the first bipolar transistor and the second bipolar transistor are in forward service area.
8. integrated low-noise voltage controlled oscillator according to claim 1, is characterized in that, described the first metal-oxide-semiconductor and the second metal-oxide-semiconductor are in saturation region.
9. integrated low-noise voltage controlled oscillator according to claim 4, is characterized in that, the capacitance of described the 7th electric capacity and described the 8th electric capacity is 1/10th of the first backward diode or the second backward diode capacitance.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210360745.XA CN103684258A (en) | 2012-09-21 | 2012-09-21 | Integrated low-noise voltage-controlled oscillator |
| PCT/CN2013/072426 WO2014044029A1 (en) | 2012-09-21 | 2013-03-12 | Low-noise voltage-controlled oscillator |
| US14/429,807 US9312808B2 (en) | 2012-09-21 | 2013-03-12 | Low-noise voltage-controlled oscillator |
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| CN201210360745.XA CN103684258A (en) | 2012-09-21 | 2012-09-21 | Integrated low-noise voltage-controlled oscillator |
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| CN103684258A true CN103684258A (en) | 2014-03-26 |
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Cited By (3)
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| CN110690896A (en) * | 2018-07-04 | 2020-01-14 | 三星电子株式会社 | Integrated circuit with a plurality of transistors |
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| CN111628725A (en) * | 2020-06-19 | 2020-09-04 | 南京邮电大学 | A Noise Cyclic LC Voltage Controlled Oscillator Circuit |
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