CN103943664B - Image display system - Google Patents

The invention discloses an image display system. The image display system includes a self-luminous display device, which includes: the pixel structure comprises a substrate, and a first secondary pixel unit and a second secondary pixel unit which are arranged on the substrate. Each pixel unit comprises: a light emitting element, a power supply line, and an electrode. The power line is electrically connected to the light emitting element. The electrode is electrically connected to the power line. The second sub-pixel unit is adjacent to the first sub-pixel unit, wherein the electrodes in the first and second sub-pixel units are formed by continuous conductive layers, so that the two power lines are electrically connected with each other through the continuous conductive layers.

影像显示系统Image display system

本申请文件是2009年5月13日提交的发明名称为“影像显示系统”的第200910136730.3号发明专利申请的分案申请。This application document is a divisional application of the invention patent application No. 200910136730.3 filed on May 13, 2009 with the title of "image display system".

技术领域technical field

本发明涉及一种平面显示器技术，特别是涉及一种自发光显示器，其中利用定义薄膜晶体管的有源层或栅极电极的材料层来电性连接用于发光元件的电源线。The present invention relates to a flat panel display technology, in particular to a self-luminous display, wherein a material layer defining an active layer or a gate electrode of a thin film transistor is used to electrically connect a power supply line for a light-emitting element.

背景技术Background technique

近年来，平面显示装置的需求快速的增加，例如自发光显示装置。自发光显示装置通常利用有机发光二极管(organic light-emitting diode,OLED)作为像素区中用于影像显示的发光元件，例如有源式阵列有机发光二极管(active matrix OLED,AMOLED)显示器。在自发光显示装置的次像素阵列中，每个次像素(sub-pixel)单元通常包括：由数据线DL、扫描线SL、电源线PL、开关薄膜晶体管SW、驱动薄膜晶体管DR、储存电容C、以及发光二极管D所构成的次像素单元电路，如图1所示。In recent years, the demand for flat panel display devices, such as self-luminous display devices, has increased rapidly. Self-luminous display devices generally use organic light-emitting diodes (organic light-emitting diodes, OLEDs) as light-emitting elements for image display in pixel regions, such as active matrix OLEDs (AMOLED) displays. In the sub-pixel array of a self-luminous display device, each sub-pixel unit usually includes: a data line DL, a scan line SL, a power line PL, a switching thin film transistor SW, a driving thin film transistor DR, a storage capacitor C , and a sub-pixel unit circuit composed of a light emitting diode D, as shown in FIG. 1 .

在AMOLED产品中，为了降低大电流流经电源线时所产生的压降，都是尽可能地加宽电源线的宽度。再者，为了改善每一驱动薄膜晶体管的源极端电压均一性(voltageuniformity)，通常会将电源线制作成网状结构，使像素阵列每一列中不同栏的次像素的电源线能够电性连接在一起。In AMOLED products, in order to reduce the voltage drop generated when a large current flows through the power line, the width of the power line is widened as much as possible. Furthermore, in order to improve the voltage uniformity of the source terminals of each driving thin film transistor, the power lines are usually made into a mesh structure, so that the power lines of sub-pixels in different columns in each column of the pixel array can be electrically connected to the Together.

由于网状结构的电源线与数据线由同一金属层制作而成，因此部分的网状结构的电源线会跨越数据线。因此，在电路设计上，必须在网状结构的电源线与数据线的交点额外制作架桥(至少含二个接触孔)。如此一来，会增加电路布局以及工艺的复杂度。再者，网状结构的电源线所需的空间会限制像素尺寸，使显示器中像素的解析度(pixel per inch,ppi)无法提升。Since the power lines and the data lines of the mesh structure are made of the same metal layer, part of the power lines of the mesh structure will cross the data lines. Therefore, in terms of circuit design, an additional bridge (including at least two contact holes) must be made at the intersection of the power line and the data line in the mesh structure. In this way, the complexity of circuit layout and process will be increased. Furthermore, the space required by the power lines of the mesh structure will limit the pixel size, so that the pixel resolution (pixel per inch, ppi) in the display cannot be improved.

因此，有必要寻求一种用于OLED显示器的电源线结构，其可在改善电压均一性的同时，提升显示器解析度。Therefore, it is necessary to seek a power line structure for an OLED display, which can improve the display resolution while improving the voltage uniformity.

发明内容Contents of the invention

本发明实施例提供一种影像显示系统。此系统包括自发光显示装置，自发光显示装置包括基板以及设置于基板上的第一及第二次像素单元。第一次像素单元包括：第一发光元件、第一电源线、以及第一储存电容。第一电源线电性连接至第一发光元件。第一储存电容具有第一电极电性连接至第一电源线。第二次像素单元相邻于第一次像素单元，包括：第二发光元件、第二电源线、以及第二储存电容。第二电源线电性连接至第二发光元件。第二储存电容具有第二电极电性连接至第二电源线，其中第一与第二电极由连续的导电层所构成，使第一电源线经由连续的导电层而电性连接至第二电源线。An embodiment of the present invention provides an image display system. The system includes a self-luminous display device, and the self-luminous display device includes a substrate and first and second sub-pixel units arranged on the substrate. The first pixel unit includes: a first light emitting element, a first power line, and a first storage capacitor. The first power line is electrically connected to the first light emitting element. The first storage capacitor has a first electrode electrically connected to the first power line. The second sub-pixel unit is adjacent to the first-time pixel unit, and includes: a second light emitting element, a second power line, and a second storage capacitor. The second power line is electrically connected to the second light emitting element. The second storage capacitor has a second electrode electrically connected to the second power supply line, wherein the first and second electrodes are formed by a continuous conductive layer, so that the first power supply line is electrically connected to the second power supply through the continuous conductive layer Wire.

本发明另一实施例提供一种影像显示系统，此系统包括自发光显示装置，自发光显示装置包括基板以及设置于基板上的第一及第二次像素单元。第一次像素单元包括：第一发光元件、第一电源线、第一储存电容、及第一驱动晶体管。第一电源线电性连接至第一发光元件及第一储存电容的第一金属电极。第一驱动晶体管具有第一源极掺杂区连接至第一电源线，以驱动第一发光元件。第二次像素单元相邻于第一次像素单元，包括：第二发光元件、第二电源线、第二储存电容、及第二驱动晶体管。第二电源线电性连接至第二发光元件及第二储存电容的第二金属电极。第二驱动晶体管具有第二源极掺杂区电性连接至第二电源线，以驱动第二发光元件。其中，第一与第二源极掺杂区由连续的导电层所构成，使第一电源线经由连续的导电层而电性连接至第二电源线。Another embodiment of the present invention provides an image display system, which includes a self-luminous display device. The self-luminous display device includes a substrate and first and second sub-pixel units disposed on the substrate. The first pixel unit includes: a first light emitting element, a first power line, a first storage capacitor, and a first driving transistor. The first power line is electrically connected to the first light emitting element and the first metal electrode of the first storage capacitor. The first driving transistor has a first doped source region connected to the first power line to drive the first light emitting element. The second sub-pixel unit is adjacent to the first-time pixel unit, and includes: a second light emitting element, a second power line, a second storage capacitor, and a second driving transistor. The second power line is electrically connected to the second light emitting element and the second metal electrode of the second storage capacitor. The second driving transistor has a second source doped region electrically connected to the second power line to drive the second light emitting element. Wherein, the first and second source doped regions are formed by a continuous conductive layer, so that the first power line is electrically connected to the second power line through the continuous conductive layer.

附图说明Description of drawings

图1为绘示出自发光显示装置的次像素单元电路示意图；1 is a schematic diagram illustrating a sub-pixel unit circuit of a self-luminous display device;

图2为绘示出根据本发明实施例的具有自发光显示装置的影像显示系统平面示意图；2 is a schematic plan view illustrating an image display system with a self-luminous display device according to an embodiment of the present invention;

图3为绘示出沿图2中3-3’线的剖面示意图；Fig. 3 is a schematic sectional view along the line 3-3' in Fig. 2;

图4为绘示出根据本发明另一实施例的具有自发光显示装置的影像显示系统平面示意图；4 is a schematic plan view illustrating an image display system with a self-luminous display device according to another embodiment of the present invention;

图5为绘示出沿图4中5-5’线的剖面示意图；Fig. 5 is a schematic sectional view along 5-5' line in Fig. 4;

图6为绘示出根据本发明另一实施例的具有自发光显示装置的影像显示系统平面示意图；6 is a schematic plan view illustrating an image display system with a self-luminous display device according to another embodiment of the present invention;

图7a为绘示出沿图6中7a-7a’线的剖面示意图；Figure 7a is a schematic cross-sectional view along the line 7a-7a' in Figure 6;

图7b为绘示出沿图6中7b-7b’线的剖面示意图；以及Figure 7b is a schematic cross-sectional view along the line 7b-7b' in Figure 6; and

图8为绘示出根据本发明另一实施例的具有影像显示系统方块示意图。FIG. 8 is a schematic block diagram illustrating a system with image display according to another embodiment of the present invention.

附图标记说明Explanation of reference signs

已知A known

C～储存电容 D～发光二极管C～storage capacitor D～light-emitting diode

DR～驱动薄膜晶体管 DL～数据线DR～drive thin film transistor DL～data line

PL～电源线 SL～扫描线PL～power line SL～scanning line

SW～开关薄膜晶体管SW～switching thin film transistor

实施例Example

100～基板 102～下电极100～substrate 102～bottom electrode

104～电容介电层 106～上电极104～capacitor dielectric layer 106～upper electrode

107～储存电容 108～绝缘层107～storage capacitor 108～insulation layer

109～驱动薄膜晶体管 110～电源线109～drive thin film transistor 110～power line

111～发光元件 112～数据线111～light emitting element 112～data line

114～扫描线 115～源极掺杂区114～scanning line 115～source doped region

200～自发光显示装置 200a～第一次像素单元200～self-luminous display device 200a～the first pixel unit

200b～第二次像素单元 300～平面显示器装置200b～second pixel unit 300～flat panel display device

400～输入单元 500～电子装置400～input unit 500～electronic device

200c～第三次像素单元 D～漏极200c～third pixel unit D～drain

G～栅极 P1、P2、P3～导电插塞 S～源极G～gate P1, P2, P3～conductive plug S～source

具体实施方式detailed description

以下说明本发明实施例的制作与使用。然而，可轻易了解本发明所提供的实施例仅用于说明以特定方法制作及使用本发明，并非用以局限本发明的范围。The manufacture and use of the embodiments of the present invention are described below. However, it can be easily understood that the embodiments provided in the present invention are only used to illustrate the making and use of the present invention in a specific way, and are not intended to limit the scope of the present invention.

以下说明根据本发明实施例的影像显示系统。请参照图2及图3，其中图2为绘示出根据本发明实施例的具有自发光显示装置的影像显示系统平面示意图，而图3为绘示出沿图2中3-3’线的剖面示意图。自发光显示装置200包括：基板100以及设置于基板100上排列成阵列的多次像素单元。为了简化附图，此处仅绘示出二相邻且用以显示不同主色的第一次像素单元200a及第二次像素单元200b。基板100可由玻璃、石英、或其它透明材料所构成。再者，典型的次像素单元中包括：驱动薄膜晶体管(driving TFT)用于驱动发光元件、开关薄膜晶体管(switching TFT)用于切换次像素单元的状态、储存电容用于储存影像数据、扫描线用于控制开关薄膜晶体管、数据线用于传送影像数据、以及电源线透过驱动薄膜晶体管将电压施加于发光元件。An image display system according to an embodiment of the present invention will be described below. Please refer to FIG. 2 and FIG. 3 , wherein FIG. 2 is a schematic plan view of an image display system with a self-luminous display device according to an embodiment of the present invention, and FIG. 3 is a schematic view along line 3-3' in FIG. Sectional schematic. The self-luminous display device 200 includes: a substrate 100 and multiple pixel units disposed on the substrate 100 and arranged in an array. In order to simplify the drawing, only two adjacent first-time pixel units 200 a and second second-pixel unit 200 b for displaying different primary colors are shown here. The substrate 100 may be made of glass, quartz, or other transparent materials. Furthermore, a typical sub-pixel unit includes: a driving TFT for driving a light-emitting element, a switching TFT for switching the state of the sub-pixel unit, a storage capacitor for storing image data, a scanning line The data line is used to control the switching thin film transistor, the data line is used to transmit image data, and the power line is used to apply voltage to the light emitting element through the driving thin film transistor.

在本实施例中，第一次像素单元200a及第二次像素单元200b分别包括：电源线110、数据线112、扫描线114、储存电容107、驱动薄膜晶体管109、发光元件111、以及开关薄膜晶体管(未标示)。In this embodiment, the first pixel unit 200a and the second pixel unit 200b respectively include: a power line 110, a data line 112, a scan line 114, a storage capacitor 107, a driving thin film transistor 109, a light emitting element 111, and a switch film Transistor (not labeled).

发光元件111，例如有机发光二极管(OLED)，通过导电插塞P2电性连接至驱动薄膜晶体管109的漏极D，再经由电性连接至驱动薄膜晶体管109的源极S的导电插塞P3而与电源线110电性连接。The light-emitting element 111, such as an organic light-emitting diode (OLED), is electrically connected to the drain D of the driving thin film transistor 109 through a conductive plug P2, and then electrically connected to the source S of the driving thin film transistor 109 through a conductive plug P3. It is electrically connected with the power line 110 .

储存电容107包括：下电极102、上电极106、以及位于二电极102及106之间的电容介电层104。在本实施例中，下电极102可由半导体材料所构成，例如掺杂的多晶硅。上电极106可由金属所构成，例如钼(Mo)或钼合金。电容介电层104可由氧化硅、氮化硅、或其组合所构成。下电极102电性连接至开关薄膜晶体管的漏极与驱动薄膜晶体管109的栅极G。再者，上电极106经由上方绝缘层108内的导电插塞P1而电性连接至电源线110，如图3所示。绝缘层108作为保护层、平坦层、中间层、或其组合，且可由氧化硅、氮化硅、或其组合所构成。The storage capacitor 107 includes: a lower electrode 102 , an upper electrode 106 , and a capacitor dielectric layer 104 between the two electrodes 102 and 106 . In this embodiment, the lower electrode 102 can be made of semiconductor material, such as doped polysilicon. The upper electrode 106 can be made of metal, such as molybdenum (Mo) or molybdenum alloy. The capacitor dielectric layer 104 can be made of silicon oxide, silicon nitride, or a combination thereof. The lower electrode 102 is electrically connected to the drain of the switching TFT and the gate G of the driving TFT 109 . Moreover, the upper electrode 106 is electrically connected to the power line 110 through the conductive plug P1 in the upper insulating layer 108 , as shown in FIG. 3 . The insulating layer 108 serves as a protection layer, a planar layer, an intermediate layer, or a combination thereof, and may be composed of silicon oxide, silicon nitride, or a combination thereof.

在本实施例中，特别的是第一次像素单元200a及第二次像素单元200b中储存电容107之的上电极106由连续的导电层所构成，例如连续的金属层。如此一来，第一次像素单元200a及第二次像素单元200b的电源线110可经由构成上电极106的连续的导电层而彼此电性连接。因此，在次像素单元阵列中，同一列的次像素单元，可透过连续的导电层来电性连接至少二个以上的电源线。在其它实施例中，同一列的次像素单元，可透过二个以上的连续的导电层而构成多组电性连接的电源线。在实施例中，至少一部分的连续的导电层大体垂直第一次像素单元200a及第二次像素单元200b的电源线110的延伸方向。In this embodiment, particularly, the upper electrodes 106 between the storage capacitors 107 in the first sub-pixel unit 200a and the second sub-pixel unit 200b are formed by a continuous conductive layer, such as a continuous metal layer. In this way, the power lines 110 of the first sub-pixel unit 200 a and the second sub-pixel unit 200 b can be electrically connected to each other through the continuous conductive layer forming the upper electrode 106 . Therefore, in the sub-pixel unit array, the sub-pixel units in the same column can be electrically connected to at least two or more power lines through a continuous conductive layer. In other embodiments, the sub-pixel units in the same row can form multiple sets of electrically connected power lines through more than two continuous conductive layers. In an embodiment, at least a part of the continuous conductive layer is substantially perpendicular to the extending direction of the power line 110 of the first sub-pixel unit 200 a and the second sub-pixel unit 200 b.

位于绝缘层108上方的数据线112与电源线110可由图案化同一导电层而成，其材料包括：铝(Al)、钼(Mo)、钛(Ti)、或其组合。The data line 112 and the power line 110 located above the insulating layer 108 can be formed by patterning the same conductive layer, and its material includes aluminum (Al), molybdenum (Mo), titanium (Ti), or a combination thereof.

请参照图4及图5，其中图4为绘示出根据本发明另一实施例的具有自发光显示装置的影像显示系统平面示意图，而图5为绘示出沿图4中5-5’线的剖面示意图，其中相同于图2及图3相同的部件使用相同的标号并省略其说明。在本实施例中，第三次像素单元200c与第一次像素单元200a相邻，且用于显示相同于第一次像素单元200a所显示的主色。再者，上电极106电性连接至开关薄膜晶体管的漏极与驱动薄膜晶体管109的栅极G，而下电极102经由上方绝缘层108内的导电插塞P3而电性连接至电源线110，如图5所示。特别的是第一次像素单元200a及第二次像素单元200b中储存电容107的下电极102由连续的导电层所构成。在本实施例中，第三次像素单元200c中储存电容107的下电极102也可由该连续的导电层所构成。连续的导电层包括半导体材料，例如掺杂的多晶硅。同样地，第一次像素单元200a、第二次像素单元200b、及第三次像素单元200c的电源线110可经由构成下电极102的连续的导电层而彼此电性连接。Please refer to FIG. 4 and FIG. 5, wherein FIG. 4 is a schematic plan view showing an image display system with a self-luminous display device according to another embodiment of the present invention, and FIG. A schematic cross-sectional view of the line, wherein the same components as in FIG. 2 and FIG. 3 use the same reference numerals and their descriptions are omitted. In this embodiment, the third sub-pixel unit 200c is adjacent to the first-time pixel unit 200a, and is used to display the same main color as that displayed by the first-time pixel unit 200a. Moreover, the upper electrode 106 is electrically connected to the drain of the switching thin film transistor and the gate G of the driving thin film transistor 109, and the lower electrode 102 is electrically connected to the power line 110 through the conductive plug P3 in the upper insulating layer 108, As shown in Figure 5. In particular, the lower electrode 102 of the storage capacitor 107 in the first sub-pixel unit 200a and the second sub-pixel unit 200b is formed by a continuous conductive layer. In this embodiment, the lower electrode 102 of the storage capacitor 107 in the third sub-pixel unit 200c may also be formed by the continuous conductive layer. The continuous conductive layer comprises a semiconductor material such as doped polysilicon. Likewise, the power lines 110 of the first sub-pixel unit 200 a , the second sub-pixel unit 200 b , and the third sub-pixel unit 200 c can be electrically connected to each other through the continuous conductive layer forming the lower electrode 102 .

在次像素单元阵列中，同一列及/或同一栏的次像素单元，可透过连续的导电层来电性连接对应的电源线。在其它实施例中，同一列及/或同一栏的次像素单元，可透过二个以上的连续的导电层而构成多组具有电性连接的电源线的次像素单元。在实施例中，至少一部分的连续的导电层大体垂直第一次像素单元200a、第二次像素单元200b、及第三次像素单元200c的电源线110的延伸方向。In the sub-pixel unit array, the sub-pixel units in the same row and/or column can be electrically connected to corresponding power lines through a continuous conductive layer. In other embodiments, the sub-pixel units in the same column and/or the same column can form multiple sets of sub-pixel units with electrically connected power lines through more than two continuous conductive layers. In an embodiment, at least a part of the continuous conductive layer is substantially perpendicular to the extending direction of the power line 110 of the first sub-pixel unit 200a, the second sub-pixel unit 200b, and the third sub-pixel unit 200c.

在其它的实施例中，次像素单元阵列中有些电源线110可通过构成上电极106的连续的导电层而彼此电性连接(如图2及图3所示)，而有些电源线110则可通过构成下电极102的连续的导电层而彼此电性连接(如图4及图5所示)。In other embodiments, some power lines 110 in the sub-pixel unit array can be electrically connected to each other through the continuous conductive layer forming the upper electrode 106 (as shown in FIG. 2 and FIG. 3 ), while some power lines 110 can be They are electrically connected to each other through the continuous conductive layer forming the bottom electrode 102 (as shown in FIG. 4 and FIG. 5 ).

请参照图6、7a及图7b，其中图6为绘示出根据本发明另一实施例的具有自发光显示装置的影像显示系统平面示意图，而图7a为绘示出沿图6中7a-7a’线的剖面示意图且图7b为绘示出沿图6中7b-7b’线的剖面示意图，其中相同于图2及图3相同的部件使用相同的标号并省略其说明。在本实施例中，储存电容107的下电极102由半导体材料所构成，例如掺杂的多晶硅，而上电极106由金属所构成，例如钼(Mo)或钼合金。上电极106经由上方绝缘层108内的导电插塞P1而电性连接至电源线110。再者，驱动薄膜晶体管109具有源极掺杂区115，其经由上方绝缘层108内的导电插塞P3而电性连接至电源线110。Please refer to FIG. 6, 7a and FIG. 7b, wherein FIG. 6 is a schematic plan view of an image display system with a self-luminous display device according to another embodiment of the present invention, and FIG. 7a' is a schematic cross-sectional view and FIG. 7b is a schematic cross-sectional view along line 7b-7b' in FIG. 6, wherein the same components as those in FIG. 2 and FIG. In this embodiment, the lower electrode 102 of the storage capacitor 107 is made of semiconductor material, such as doped polysilicon, and the upper electrode 106 is made of metal, such as molybdenum (Mo) or molybdenum alloy. The upper electrode 106 is electrically connected to the power line 110 through the conductive plug P1 in the upper insulating layer 108 . Moreover, the driving thin film transistor 109 has a source doped region 115 electrically connected to the power line 110 through the conductive plug P3 in the upper insulating layer 108 .

特别的是，第一次像素单元200a及第二次像素单元200b中驱动薄膜晶体管109的源极掺杂区115由连续的导电层例如掺杂的多晶硅所构成。如此，第一次像素单元200a及第二次像素单元200b的电源线110可经由构成源极掺杂区115的连续的导电层而彼此电性连接，如图6及7b所示。再者，第一次像素单元200a及第二次像素单元200b中储存电容107的上电极106(即，金属电极)也由连续的金属层所构成，如图6及7a所示。如此一来，第一次像素单元200a及第二次像素单元200b的电源线110也经由构成上电极106的连续的金属层而彼此电性连接。在其它实施例中，第一次像素单元200a及第二次像素单元200b的电源线110仅经由构成源极掺杂区115的连续的导电层而彼此电性连接，而第一次像素单元200a及第二次像素单元200b中储存电容107的上电极106则彼此分开，使第一次像素单元200a及第二次像素单元200b的电源线110未经由上电极106而彼此电性连接。在实施例中，至少一部分的连续的导电层以及至少一部分的连续的金属层大体垂直第一次像素单元200a及第二次像素单元200b的电源线110的延伸方向。In particular, the source doped region 115 of the driving thin film transistor 109 in the first sub-pixel unit 200 a and the second sub-pixel unit 200 b is formed of a continuous conductive layer such as doped polysilicon. In this way, the power lines 110 of the first sub-pixel unit 200 a and the second sub-pixel unit 200 b can be electrically connected to each other through the continuous conductive layer forming the source doped region 115 , as shown in FIGS. 6 and 7 b . Moreover, the upper electrodes 106 (ie, metal electrodes) of the storage capacitors 107 in the first sub-pixel unit 200a and the second sub-pixel unit 200b are also formed by a continuous metal layer, as shown in FIGS. 6 and 7 a . In this way, the power lines 110 of the first sub-pixel unit 200 a and the second sub-pixel unit 200 b are also electrically connected to each other through the continuous metal layer forming the upper electrode 106 . In other embodiments, the power lines 110 of the first sub-pixel unit 200a and the second sub-pixel unit 200b are electrically connected to each other only through the continuous conductive layer forming the source doped region 115, while the first sub-pixel unit 200a The upper electrodes 106 of the storage capacitors 107 in the second sub-pixel unit 200b are separated from each other, so that the power lines 110 of the first sub-pixel unit 200a and the second sub-pixel unit 200b are not electrically connected to each other through the upper electrodes 106 . In an embodiment, at least a portion of the continuous conductive layer and at least a portion of the continuous metal layer are substantially perpendicular to the extending direction of the power line 110 of the first sub-pixel unit 200 a and the second sub-pixel unit 200 b.

根据上述实施例，由于次像素单元阵列中二个或二个以上同列、同栏或不同列且不同栏的次像素单元的电源线彼此电性连接，因此可改善每一驱动薄膜晶体管的源极端电压均一性。再者，由于采用电源线与数据线下方连续的金属层及/或半导体层来电性连接次像素单元的电源线，因此可简化电路布局以及工艺的复杂度，同时不会限制像素尺寸，而可提升显示器中像素的解析度。According to the above-mentioned embodiment, since the power lines of two or more sub-pixel units in the same column, the same column, or different columns and different columns in the sub-pixel unit array are electrically connected to each other, the source terminals of each driving thin film transistor can be improved. Voltage Uniformity. Furthermore, since the power lines of the sub-pixel units are electrically connected by using the continuous metal layer and/or semiconductor layer under the power lines and data lines, the circuit layout and the complexity of the process can be simplified, and the pixel size is not limited at the same time. Increases the resolution of the pixels in the display.

图8为绘示出根据本发明另一实施例的具有影像显示系统方块示意图，其可实施于平面显示(FPD)装置300或电子装置500，例如笔记型电脑、手机、数字相机、个人数字助理(personal digital assistant,PDA)、桌上型电脑、电视机、车用显示器、或携带型DVD播放器。之前所述的自发光显示装置200可并入于平面显示装置300，而平面显示装置300可为OLED显示器。如图8所示，平面显示装置300包括自发光显示装置，如图2至图7中的自发光显示装置200所示。在其它实施例中，自发光显示装置200可并入于电子装置500。如图8所示，电子装置500包括：平面显示装置300及输入单元400。再者，输入单元400耦接至平面显示器装置300，用以提供输入信号(例如，影像信号)至平面显示装置300以产生影像。8 is a schematic block diagram illustrating a system with image display according to another embodiment of the present invention, which can be implemented in a flat panel display (FPD) device 300 or an electronic device 500, such as a notebook computer, a mobile phone, a digital camera, a personal digital assistant (personal digital assistant, PDA), desktop computer, TV, car monitor, or portable DVD player. The aforementioned self-luminous display device 200 can be incorporated into the flat display device 300, and the flat display device 300 can be an OLED display. As shown in FIG. 8 , the planar display device 300 includes a self-luminous display device, as shown in the self-luminous display device 200 in FIGS. 2 to 7 . In other embodiments, the self-luminous display device 200 can be incorporated into the electronic device 500 . As shown in FIG. 8 , the electronic device 500 includes: a flat display device 300 and an input unit 400 . Furthermore, the input unit 400 is coupled to the flat panel display device 300 for providing an input signal (eg, an image signal) to the flat panel display device 300 to generate an image.

虽然本发明已以优选实施例披露如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作更动与润饰，因此本发明的保护范围当视所附的权利要求所界定为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection of the invention should be defined by the appended claims.