CN104935257B - The double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier - Google Patents

本发明的硅基低漏电流双固支梁可动栅MOSFET倍频器，由硅衬底，N型增强型MOSFET，以及外接的低通滤波器，压控振荡器，除法器、高频扼流圈构成。MOSFET的栅极是两个悬浮在栅氧化层上的固支梁，下拉电压设计为MOSFET的阈值电压，由直流偏置控制。参考信号和反馈信号加载在两个固支梁可动栅上。两个固支梁可动栅均悬浮不与栅氧化层接触时，MOSFET截止，能减小栅极漏电流。两个固支梁可动栅均下拉与栅氧化层接触时，MOSFET导通，参考信号和反馈信号输入到MOSFET实现相乘，通过外接电路最终输出参考频率的倍频信号。另外，单个固支梁可动栅下拉后，可实现对单个选通信号的放大，使电路具有多功能。本发明降低漏电流，体积更小，且实现多功能。

The silicon-based low-leakage current dual solid beam movable gate MOSFET frequency multiplier of the present invention consists of a silicon substrate, an N-type enhanced MOSFET, and an external low-pass filter, a voltage-controlled oscillator, a divider, and a high-frequency choke circle composition. The gate of the MOSFET is two fixed beams suspended on the gate oxide layer, and the pull-down voltage is designed as the threshold voltage of the MOSFET, which is controlled by a DC bias. The reference signal and the feedback signal are loaded on the movable grid of two fixed beams. When the movable gates of the two fixed beams are both suspended and not in contact with the gate oxide layer, the MOSFET is turned off, which can reduce the gate leakage current. When the movable gates of the two fixed beams are both pulled down and in contact with the gate oxide layer, the MOSFET is turned on, the reference signal and the feedback signal are input to the MOSFET for multiplication, and the frequency multiplied signal of the reference frequency is finally output through an external circuit. In addition, after the movable grid of a single fixed beam is pulled down, the amplification of a single strobe signal can be realized, so that the circuit has multiple functions. The invention reduces leakage current, has smaller volume and realizes multiple functions.

硅基低漏电流双固支梁可动栅倍频器Silicon-based low-leakage current dual-solid support beam movable gate frequency doubler

技术领域technical field

本发明提出了硅基低漏电流双固支梁可动栅MOSFET(金属氧化物半导体场效应晶体管)倍频器，属于微电子机械系统的技术领域。The invention provides a silicon-based low-leakage current dual-solid beam movable gate MOSFET (metal oxide semiconductor field-effect transistor) frequency multiplier, which belongs to the technical field of micro-electromechanical systems.

背景技术Background technique

倍频器是将一参考信号的频率经过功能电路的作用,产生参考频率N倍的频率信号。目前，倍频器广泛应用于通信、信号处理等领域。传统倍频器存在结构复杂，尺寸较大的缺点。更重要的是，电路中MOSFET器件栅极漏电流的存在增大了电路的功耗。The frequency multiplier is the function of passing the frequency of a reference signal through a functional circuit to generate a frequency signal that is N times the reference frequency. At present, frequency multipliers are widely used in communication, signal processing and other fields. The traditional frequency multiplier has the disadvantages of complex structure and large size. More importantly, the gate leakage current of MOSFET devices in the circuit increases the power consumption of the circuit.

相比之下，MEMS技术具有体积小、功耗低、价格低廉等优点,另外，MEMS固支梁结构的发展也日益成熟。本发明的目的正是要提出一种硅基低漏电流双固支梁可动栅MOSFET倍频器。In contrast, MEMS technology has the advantages of small size, low power consumption, and low price. In addition, the development of MEMS fixed beam structure is becoming more and more mature. The purpose of the present invention is to propose a silicon-based low-leakage current dual-solid support beam movable gate MOSFET frequency multiplier.

发明内容Contents of the invention

技术问题:传统电路中的MOSFET结构，即便在截止状态也通常会产生一定的栅极漏电流,增加电路功耗。随着微电子技术的发展，栅氧化层厚度随着MOSFET尺寸的缩小进一步变薄，加剧了漏电流的产生。本发明的目的是提供一种硅基低漏电流双固支梁可动栅MOSFET倍频器。使电路降低功耗，结构简单，体积变小。Technical problem: The MOSFET structure in the traditional circuit usually produces a certain gate leakage current even in the off state, which increases the power consumption of the circuit. With the development of microelectronics technology, the thickness of the gate oxide layer becomes thinner with the reduction of MOSFET size, which intensifies the generation of leakage current. The object of the present invention is to provide a silicon-based low leakage current double solid support beam movable gate MOSFET frequency multiplier. The power consumption of the circuit is reduced, the structure is simple, and the volume is reduced.

技术方案：本发明的一种硅基低漏电流双固支梁可动栅倍频器的MOSFET为生长在硅衬底上的N型增强型MOSFET，包括源极，漏极，栅氧化层，锚区，悬臂梁可动栅，下拉极板，绝缘层，通孔，引线,源极接地；Technical solution: The MOSFET of a silicon-based low-leakage current dual-solid support beam movable gate frequency multiplier of the present invention is an N-type enhancement MOSFET grown on a silicon substrate, including a source, a drain, and a gate oxide layer, Anchor area, movable grid of cantilever beam, pull-down plate, insulating layer, via hole, lead wire, source grounding;

MOSFET的栅极是悬浮在栅氧化层之上的两个固支梁可动栅，锚区设置在栅氧化层两侧，固支梁可动栅固定在锚区上，固支梁可动栅的中间悬浮在栅氧化层之上，位于硅衬底上的下拉极板位于锚区与栅氧化层之间，下拉极板接地，绝缘层覆盖在下拉极板之上，直流偏置通过高频扼流圈和锚区作用在固支梁可动栅上，固支梁可动栅的下拉电压设计为MOSFET的阈值电压；引线通过通孔分别接源极，漏极；The gate of the MOSFET is two movable gates with fixed beams suspended above the gate oxide layer. The anchor areas are set on both sides of the gate oxide layer. The middle of the suspension is above the gate oxide layer, the pull-down plate on the silicon substrate is located between the anchor region and the gate oxide layer, the pull-down plate is grounded, the insulating layer is covered on the pull-down plate, and the DC bias is passed through the high frequency The choke coil and the anchor area act on the movable grid of the fixed beam, and the pull-down voltage of the movable grid of the fixed beam is designed as the threshold voltage of the MOSFET; the leads are respectively connected to the source and drain through the through holes;

漏极输出有两种不同的工作方式，一种是经第一端口输入低通滤波器，低通滤波器输出接入压控振荡器，压控振荡器输出通过第三端口接入除法器，除法器的输出作为反馈信号通过锚区加载至一个固支梁可动栅上，参考信号通过锚区加载到另一个固支梁可动栅上，漏极输出的另一种工作方式是经第二端口直接输出放大信号。The drain output has two different working modes. One is to input the low-pass filter through the first port, the output of the low-pass filter is connected to the voltage-controlled oscillator, and the output of the voltage-controlled oscillator is connected to the divider through the third port. The output of the divider is used as a feedback signal to load a fixed beam movable grid through the anchor area, and the reference signal is loaded to another fixed beam movable grid through the anchor area. Another working mode of the drain output is through the first The two ports directly output the amplified signal.

该倍频器的固支梁可动栅的下拉或悬浮通过直流偏置控制，当两个固支梁可动栅均在达到或大于下拉电压的直流偏置下实现下拉，与栅氧化层接触时，MOSFET导通，参考信号和反馈信号通过MOSFET实现相乘，漏极输出包含两信号的相位差信息，选择第一端口输入低通滤波器，低通滤波器滤除高频部分，输出包含相位差信息的直流电压，直流电压输入压控振荡器，作为控制电压调节压控振荡器的输出频率，调节频率后的信号经第三端口传输至除法器，除法器输出信号作为反馈信号加载到固支梁可动栅上，环路循环反馈的结果是反馈信号与参考信号的频率相等，压控振荡器第四端口输出频率f_o为参考信号频率的N倍：N×f_ref,实现参考信号的倍频；The pull-down or suspension of the fixed-beam movable grid of the frequency doubler is controlled by DC bias. When the two fixed-beam movable grids are pulled down under the DC bias that reaches or exceeds the pull-down voltage, they are in contact with the gate oxide layer. When the MOSFET is turned on, the reference signal and the feedback signal are multiplied by the MOSFET, the drain output contains the phase difference information of the two signals, the first port is selected to input the low-pass filter, the low-pass filter filters out the high-frequency part, and the output contains The DC voltage of the phase difference information, the DC voltage is input into the voltage-controlled oscillator, and used as the control voltage to adjust the output frequency of the voltage-controlled oscillator. The signal after adjusting the frequency is transmitted to the divider through the third port, and the output signal of the divider is loaded into the On the movable gate of the fixed beam, the result of loop feedback is that the frequency of the feedback signal is equal to the reference signal, and the output frequency f _o of the fourth port of the voltage-controlled oscillator is N times the frequency of the reference signal: N×f _ref , realizing the reference frequency multiplication of the signal;

当直流偏置小于下拉电压，两个固支梁可动栅均不下拉处于悬浮状态，不与栅氧化层接触时，MOSFET截止，栅电容较小，能够有效的减小漏电流，降低功耗；When the DC bias is less than the pull-down voltage, the movable gates of the two fixed beams are not pulled down and are in a suspended state, and when they are not in contact with the gate oxide layer, the MOSFET is turned off, and the gate capacitance is small, which can effectively reduce leakage current and power consumption ;

当只有一个固支梁可动栅下拉，另一个固支梁可动栅处于悬浮状态时，下拉的固支梁可动栅下方形成沟道，未被下拉的固支梁可动栅下方形成高阻区，沟道与高阻区串联的结构有利于提高MOSFET的反向击穿电压，只有被下拉的固支梁可动栅上的选通信号可以通过MOSFET放大，放大信号选择端口输出，当只有加载参考信号的固支梁可动栅下拉时，参考信号通过MOSFET放大，第二端口输出参考信号频率f_ref的放大信号，当只有加载反馈信号的固支梁可动栅下拉时，反馈信号通过MOSFET放大，反馈信号频率为压控振荡器输出频率f_o经除法器后除以N的结果：f_o/N，第二端口输出频率为f_o/N的放大信号。When only one movable grid of the fixed beam is pulled down and the other movable grid of the fixed beam is suspended, a channel is formed under the movable grid of the pulled down fixed beam, and a high channel is formed under the movable grid of the fixed beam that has not been pulled down. The resistance area, the structure of the channel and the high resistance area in series is conducive to improving the reverse breakdown voltage of the MOSFET. Only the strobe signal on the movable gate of the pulled-down fixed beam can be amplified by the MOSFET, and the amplified signal selects the port output. When When only the movable grid of the fixed beam loaded with the reference signal is pulled down, the reference signal is amplified by the MOSFET, and the second port outputs the amplified signal of the frequency f _ref of the reference signal. When only the movable grid of the fixed beam loaded with the feedback signal is pulled down, the feedback signal Through MOSFET amplification, the feedback signal frequency is the result of dividing the output frequency f _o of the voltage controlled oscillator by N after the divider: f _o /N, and the second port outputs an amplified signal with the frequency f _o /N.

有益效果：本发明的硅基低漏电流双固支梁可动栅MOSFET倍频器具有以下显著的优点：Beneficial effects: the silicon-based low-leakage current double-solid support beam movable gate MOSFET frequency multiplier of the present invention has the following significant advantages:

1、采用固支梁作为栅极，在MOSFET截止状态实现栅极与栅氧化层的脱离，具有减小电路漏电流，降低功耗的优点；1. Using the fixed support beam as the gate, the gate and the gate oxide layer are detached in the cut-off state of the MOSFET, which has the advantages of reducing circuit leakage current and power consumption;

2、下拉单个固支梁可动栅可实现对单个选通信号的放大，使电路多功能化，扩展其应用范围，另一个不被下拉的固支梁可动栅下方形成高阻区，有利于提高MOSFET反向击穿电压；2. Pulling down the movable grid of a single fixed beam can amplify a single strobe signal, making the circuit multi-functional and expanding its application range. A high-resistance area is formed under the movable grid of another fixed beam that is not pulled down. It is beneficial to improve the reverse breakdown voltage of MOSFET;

3、采用MEMS技术，使得电路结构简单化，体积小型化。3. Using MEMS technology, the circuit structure is simplified and the volume is miniaturized.

附图说明Description of drawings

图1为本发明的硅基低漏电流双固支梁可动栅MOSFET倍频器的俯视图。FIG. 1 is a top view of a silicon-based low-leakage current dual-solid support beam movable gate MOSFET frequency doubler of the present invention.

图2为图1硅基低漏电流双固支梁可动栅MOSFET倍频器的A-A’向剖面图。Fig. 2 is an A-A' cross-sectional view of the silicon-based low-leakage current double solid support beam movable gate MOSFET frequency doubler in Fig. 1 .

图3为图1硅基低漏电流双固支梁可动栅MOSFET倍频器的B-B’向剖面图。Fig. 3 is a B-B' cross-sectional view of the silicon-based low-leakage current double solid support beam movable gate MOSFET frequency doubler in Fig. 1 .

图4为图1硅基固支梁可动栅低漏电流MOSFET两个固支梁可动栅均下拉时的沟道示意图。FIG. 4 is a schematic diagram of the channel of the silicon-based fixed-beam movable gate low-leakage current MOSFET in FIG. 1 when the two fixed-beam movable gates are both pulled down.

图5为图1硅基固支梁可动栅低漏电流MOSFET单个固支梁可动栅下拉时的沟道示意图。Fig. 5 is a schematic diagram of the channel when the single fixed beam movable gate of the silicon-based fixed beam movable gate low leakage current MOSFET shown in Fig. 1 is pulled down.

图中有：硅衬底1，源极2，漏极3，栅氧化层4，锚区5，固支梁可动栅6，下拉电极7，绝缘层8，通孔9，引线10，第一端口11，第二端口12，第三端口13，第四端口14。In the figure there are: silicon substrate 1, source electrode 2, drain electrode 3, gate oxide layer 4, anchor region 5, fixed beam movable gate 6, pull-down electrode 7, insulating layer 8, through hole 9, lead wire 10, the A port 11 , a second port 12 , a third port 13 , and a fourth port 14 .

具体实施方式detailed description

本发明的硅基低漏电流双固支梁可动栅MOSFET倍频器。包括硅衬底、N型增强型MOSFET，以及外接的低通滤波器、压控振荡器、除法器、高频扼流圈，其中MOSFET生长在硅衬底上，包括源极、漏极、栅氧化层、两个固支梁可动栅，锚区、下拉电极、绝缘层。MOSFET的栅极是横跨悬浮在栅氧化层之上的两个分立的固支梁，栅氧化层连接在源漏之间，锚区设置在栅氧化层两侧，固支梁可动栅通过各自的锚区横跨栅氧化层之上，下拉电极设置在栅氧化层与锚区之间，下拉电极接地，绝缘层覆盖在下拉电极之上。The invention relates to a silicon-based low-leakage current dual-solid support beam movable gate MOSFET frequency multiplier. Including silicon substrate, N-type enhanced MOSFET, and external low-pass filter, voltage-controlled oscillator, divider, high-frequency choke coil, in which MOSFET is grown on the silicon substrate, including source, drain, gate Oxide layer, two movable gates of fixed beams, anchor area, pull-down electrode, and insulating layer. The gate of the MOSFET is two discrete fixed beams suspended above the gate oxide layer, the gate oxide layer is connected between the source and drain, the anchor regions are set on both sides of the gate oxide layer, and the fixed beam movable gate passes through The respective anchor regions straddle the gate oxide layer, the pull-down electrodes are arranged between the gate oxide layer and the anchor regions, the pull-down electrodes are grounded, and the insulating layer covers the pull-down electrodes.

参考信号和反馈信号分别加载在两个固支梁可动栅上，直流偏置通过高频扼流圈和锚区作用在固支梁可动栅上。The reference signal and the feedback signal are loaded on the two movable grids of the fixed beam respectively, and the DC bias acts on the movable grid of the fixed beam through the high frequency choke coil and the anchor area.

固支梁可动栅的下拉电压设计为MOSFET的阈值电压。当直流偏置小于下拉电压，两个固支梁可动栅均悬浮在栅氧化层之上时，MOSFET截止，因栅极不与栅氧化层接触，栅电容较小，能够有效的减小栅极漏电流，降低功耗。The pull-down voltage of the movable gate of the fixed beam is designed as the threshold voltage of the MOSFET. When the DC bias is less than the pull-down voltage and the movable gates of the two fixed beams are suspended above the gate oxide layer, the MOSFET is turned off. Since the gate is not in contact with the gate oxide layer, the gate capacitance is small, which can effectively reduce the gate capacitance. Very low leakage current, reducing power consumption.

当两个固支梁可动栅均通过达到或大于下拉电压的直流偏置下拉，与栅氧化层接触时，MOSFET导通，参考信号和反馈信号通过MOSFET相乘。漏极输出信号包含了参考信号和反馈信号之间的相位差信息。低通滤波器将此信号中的高频分量滤除，并向压控振荡器输送一个直流控制电压，调节压控振荡器输出频率。压控振荡器输出信号经过除法器之后，在频率上对应发生1/N的改变，并作为反馈信号，重新输入MOSFET，经过锁相环环路的作用，反馈信号和参考信号达到频率一致的锁定状态。最终压控振荡器输出的信号频率为参考频率的N倍，实现对参考信号的倍频。When the movable gates of the two fixed beams are both pulled down by a DC bias reaching or greater than the pull-down voltage and contact the gate oxide layer, the MOSFET is turned on, and the reference signal and the feedback signal are multiplied by the MOSFET. The drain output signal contains the phase difference information between the reference signal and the feedback signal. The low-pass filter filters out the high-frequency components in this signal, and sends a DC control voltage to the voltage-controlled oscillator to adjust the output frequency of the voltage-controlled oscillator. After the output signal of the voltage-controlled oscillator passes through the divider, the corresponding 1/N change in frequency occurs, and as a feedback signal, it is re-input into the MOSFET. After the action of the phase-locked loop, the feedback signal and the reference signal achieve a frequency-consistent lock state. Finally, the frequency of the signal output by the voltage-controlled oscillator is N times the reference frequency, so as to realize the frequency multiplication of the reference signal.

当只有一个固支梁可动栅被下拉时，该固支梁可动栅下方形成沟道，另一个未被下拉的固支梁可动栅下方为高阻区，沟道和高阻区串联的结构能有效的提高MOSFET的反向击穿电压。只有选择下拉的固支梁可动栅上的选通信号可以通过MOSFET放大输出，从而通过对一个固支梁可动栅的单独控制，实现对单个信号的频率处理，扩大了电路的应用范围。When only one movable grid of the fixed beam is pulled down, a channel is formed under the movable grid of the fixed beam, and a high-resistance area is formed under the movable grid of the other fixed beam that is not pulled down, and the channel and the high-resistance area are connected in series The structure can effectively improve the reverse breakdown voltage of MOSFET. Only the strobe signal on the movable gate of the fixed beam that is selected to be pulled down can be amplified and output through the MOSFET, so that the frequency processing of a single signal can be realized through the independent control of a movable gate of the fixed beam, and the application range of the circuit is expanded.

MOSFET漏极3输出区分为两种工作方式，一种通过第一端口11接入低通滤波器，低通滤波器输出接入压控振荡器，压控振荡器输出经第三端口13接入除法器，除法器输出作为反馈信号通过锚区5加载到一个固支梁可动栅6上，参考信号通过锚区5加载到另一个固支梁可动栅6上。MOSFET漏极3输出的另一种工作方式是选择第二端口12直接输出放大信号。The MOSFET drain 3 output is divided into two working modes, one is connected to the low-pass filter through the first port 11, the output of the low-pass filter is connected to the voltage-controlled oscillator, and the output of the voltage-controlled oscillator is connected to the third port 13 A divider, the output of the divider is loaded on a fixed beam movable grid 6 through the anchor area 5 as a feedback signal, and the reference signal is loaded on another fixed beam movable grid 6 through the anchor area 5 . Another working mode for the output of the MOSFET drain 3 is to select the second port 12 to directly output the amplified signal.

直流偏置通过高频扼流圈和锚区5作用在固支梁可动栅6上，高频扼流圈起到交直流隔开的作用。固支梁可动栅6的下拉电压设置为MOSFET的阈值电压。当直流偏置小于下拉电压，两个固支梁可动栅6均悬浮不与栅氧化层接触时，MOSFET截止，栅电容相比于传统的MOSFET较小，能够有效的减小漏电流，降低功耗。The DC bias acts on the movable grid 6 of the fixed beam through the high-frequency choke coil and the anchor area 5, and the high-frequency choke coil plays the role of separating AC and DC. The pull-down voltage of the movable gate 6 of the fixed beam is set as the threshold voltage of the MOSFET. When the DC bias is less than the pull-down voltage, and the movable gates 6 of the two fixed beams are both suspended and not in contact with the gate oxide layer, the MOSFET is turned off, and the gate capacitance is smaller than that of the traditional MOSFET, which can effectively reduce the leakage current and reduce the power consumption.

当直流偏置达到或大于下拉电压，两个固支梁可动栅6均下拉与栅氧化层4接触时，沟道形成，如图4所示，MOSFET导通，参考信号和反馈信号通过MOSFET实现相乘，漏极3输出包含了两信号之间的相位差信息，选择端口11传输到低通滤波器，低通滤波器将此信号中的高频分量滤除，并向压控振荡器输送一个包含相位差信息的直流电压，直流电压可以采用下式来表示：When the DC bias reaches or exceeds the pull-down voltage, and the movable gates 6 of the two fixed beams are pulled down and contact the gate oxide layer 4, a channel is formed, as shown in Figure 4, the MOSFET is turned on, and the reference signal and feedback signal pass through the MOSFET To achieve multiplication, the output of drain 3 contains the phase difference information between the two signals, select port 11 to transmit to the low-pass filter, the low-pass filter will filter out the high-frequency components in this signal, and send it to the voltage-controlled oscillator A DC voltage containing phase difference information is transmitted, and the DC voltage can be expressed by the following formula:

其中K为MOSFET增益系数，f_ref为参考信号频率，f_back为反馈信号频率，φ为固有相位差。压控振荡器在直流电压的控制下，调节输出信号频率的大小。压控振荡器输出频率可以通过以下微分表示式表达：Among them, K is the MOSFET gain coefficient, f _ref is the reference signal frequency, f _back is the feedback signal frequency, and φ is the inherent phase difference. The voltage-controlled oscillator adjusts the frequency of the output signal under the control of the DC voltage. The VCO output frequency can be expressed by the following differential expression:

其中，f_o为压控振荡器输出频率，K_v为压控振荡器灵敏度。经过除法器后，输出频率变为压控振荡器输出频率的1/N，并作为反馈信号，重新输入MOSFET。也就是：Among them, f _o is the output frequency of the voltage-controlled oscillator, and K _v is the sensitivity of the voltage-controlled oscillator. After the divider, the output frequency becomes 1/N of the output frequency of the voltage-controlled oscillator, and is used as a feedback signal to re-input the MOSFET. That is:

经过环路的反馈循环作用，反馈信号的频率最终和参考信号一致。即：After the feedback loop function of the loop, the frequency of the feedback signal is finally consistent with the reference signal. which is:

所以，最终压控振荡器端口14输出的信号频率为参考频率的N倍,实现参考信号的倍频。Therefore, finally, the signal frequency output by the voltage-controlled oscillator port 14 is N times of the reference frequency, so as to realize the frequency multiplication of the reference signal.

只有一个固支梁可动栅6被下拉，另一个固支梁可动栅6处于悬浮状态时，下拉的固支梁可动栅6下方形成沟道，未被下拉的固支梁可动栅6下方为高阻区，如图5所示，沟道与高阻区串联，有利于提高MOSFET反向击穿电压。只有下拉的固支梁可动栅6上的选通信号可以通过MOSFET放大，放大信号选择端口12输出。当只有加载参考信号的固支梁可动栅6下拉时，参考信号通过MOSFET放大，端口12输出参考频率f_ref的放大信号。当只有加载反馈信号的固支梁可动栅6下拉时，反馈信号频率为压控振荡器频率f_o经过除法器后的结果，即f_o/N，端口12输出频率为f_o/N的放大信号。从而通过对一个固支梁可动栅6的单独控制，实现对单个信号的放大，电路具有多功能，扩大了电路的应用范围。Only one movable grid 6 of the fixed beam is pulled down, and when the other movable grid 6 of the fixed beam is in a suspended state, a channel is formed under the movable grid 6 of the pulled down fixed beam, and the movable grid of the fixed beam that has not been pulled down Below 6 is a high-resistance area, as shown in Figure 5, the channel is connected in series with the high-resistance area, which is beneficial to increase the reverse breakdown voltage of the MOSFET. Only the strobe signal on the movable gate 6 of the pull-down fixed support beam can be amplified by the MOSFET, and the amplified signal selects port 12 for output. When only the movable gate 6 of the fixed beam loaded with the reference signal is pulled down, the reference signal is amplified by the MOSFET, and the port 12 outputs the amplified signal of the reference frequency f _ref . When only the movable gate 6 of the fixed support beam loaded with the feedback signal is pulled down, the frequency of the feedback signal is the result of the voltage-controlled oscillator frequency f _o passing through the divider, that is, f _o /N, and the output frequency of port 12 is f _o /N Amplify the signal. Therefore, the amplification of a single signal is realized through the separate control of a movable grid 6 of a fixed beam, and the circuit has multiple functions, which expands the application range of the circuit.

本发明的基于固支梁可动栅MOSFET的倍频器的制备方法如下：The preparation method of the frequency multiplier based on the fixed beam movable gate MOSFET of the present invention is as follows:

1)准备P型Si衬底；1) Prepare a P-type Si substrate;

2)底氧生长2) Bottom oxygen growth

3)沉积氮化硅；3) deposition of silicon nitride;

4)光刻、刻蚀氮化硅形成MOSFET源极和漏极；4) Photolithography and etching silicon nitride to form MOSFET source and drain;

5)场氧化；5) field oxidation;

6)去除氮化硅和底氧层；6) removing silicon nitride and bottom oxide layer;

7)进行栅氧化，调节阈值电压，使MOSFET为增强型；7) Perform gate oxidation, adjust the threshold voltage, and make the MOSFET an enhancement type;

8)沉积多晶硅，并光刻，保留固支梁的锚区位置的多晶硅；8) Depositing polysilicon, and photolithography, retaining the polysilicon at the anchor region position of the fixed beam;

9)电镀蒸发生长Al；9) Electroplating evaporation growth Al;

10)涂覆光刻胶，保留下拉电极上方的光刻胶；10) Coating photoresist, retaining the photoresist above the pull-down electrode;

11)反刻Al，形成下拉电极；11) Anti-etching Al to form a pull-down electrode;

12)淀积绝缘层，外延生长0.1μm的Si_xN_1-x绝缘层；12) deposit an insulating layer, and epitaxially grow a 0.1 μm Si _x N _1-x insulating layer;

13)光刻窗口，刻蚀掉多余的Si_xN_1-x：13) Photolithography window, etch away excess Si _x N _1-x :

14)涂覆光刻胶，保留下拉电极的绝缘层；14) Coating photoresist, retaining the insulating layer of the pull-down electrode;

15)利用反应离子刻蚀，形成下拉电极上的氮化硅介质层；15) using reactive ion etching to form a silicon nitride dielectric layer on the pull-down electrode;

16)通过旋涂方式形成PMGI牺牲层，然后光刻牺牲层，仅保留固支梁可动栅下方的牺牲层；16) Form the PMGI sacrificial layer by spin coating, and then photolithography the sacrificial layer, leaving only the sacrificial layer under the movable gate of the fixed beam;

17)电镀蒸发生长Al；17) Electroplating evaporation growth Al;

18)涂覆光刻胶，保留固支梁上方的光刻胶；18) Coating photoresist, retaining the photoresist above the fixed support beam;

19)反刻Al，形成固支梁可动栅；19) Anti-etch Al to form a fixed beam movable grid;

20)涂覆光刻胶，光刻注入孔，注入N+磷离子，形成MOSFET源极和漏极；20) Coating photoresist, photolithography injection hole, implanting N+ phosphorous ions to form MOSFET source and drain;

21)制作通孔和引线，涂覆光刻胶，去除源漏电极接触区的光刻胶，真空蒸发金锗镍/金，剥离，合金化形成欧姆接触；21) Making through holes and leads, coating photoresist, removing the photoresist in the source-drain electrode contact area, vacuum evaporating gold, germanium, nickel/gold, stripping, and alloying to form an ohmic contact;

22)释放PMGI牺牲层，形成悬浮的固支梁；22) release the PMGI sacrificial layer to form a suspended fixed beam;

23)将制备的MOSFET与外部电路连接，构成倍频器。23) Connect the prepared MOSFET to an external circuit to form a frequency multiplier.

区分是否为该结构的标准如下：The criteria for distinguishing whether it is the structure are as follows:

本发明的硅基低漏电流双固支梁可动栅MOSFET倍频器采用两个固支梁作为MOSFET的栅极，并分别作为参考信号和反馈信号的输入。固支梁可动栅通过直流偏置控制，下拉电压设计为MOSFET的阈值电压，当两个固支梁可动栅没有下拉均悬浮在栅氧化层上时，MOSFET截止，能够减小栅极漏电流，降低功耗。当两个固支梁可动栅均下拉和栅氧化层接触时，参考信号和反馈信号通过MOSFET相乘，漏极输出包含相位差信息，经过低通滤波器，压控振荡器、除法器反馈循环后得到参考信号频率N倍的倍频信号。另外，两个固支梁可动栅可以单独控制，下拉的固支梁可动栅下方形成沟道，另一个不被下拉的固支梁可动栅下方形成高阻区，有利于增大反向击穿电压，并实现对单个选通信号的放大，实现电路的多功能性。The silicon-based low-leakage current double solid-beam movable gate MOSFET frequency multiplier of the present invention uses two solid-beams as gates of the MOSFET, which are respectively used as inputs of reference signals and feedback signals. The fixed-beam movable gate is controlled by DC bias, and the pull-down voltage is designed as the threshold voltage of the MOSFET. When the two fixed-beam movable gates are not pulled down and are suspended on the gate oxide layer, the MOSFET is turned off, which can reduce the gate leakage. current, reducing power dissipation. When the movable gates of the two fixed beams are both pulled down and in contact with the gate oxide layer, the reference signal and the feedback signal are multiplied by the MOSFET, and the drain output contains phase difference information, which is fed back through the low-pass filter, voltage-controlled oscillator, and divider After the cycle, a multiplied signal that is N times the frequency of the reference signal is obtained. In addition, the two movable grids of fixed beams can be controlled separately, a channel is formed under the movable grid of the fixed beam that is pulled down, and a high-resistance area is formed under the movable grid of the other fixed beam that is not pulled down, which is beneficial to increase the To the breakdown voltage, and to achieve the amplification of a single strobe signal, to achieve the versatility of the circuit.