CN106841783A - Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors - Google Patents

本发明的硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器，实现结构主要由悬臂梁耦合结构、T型结和间接加热式微波功率传感器和开关构成。悬臂梁耦合结构包括两组悬臂梁，每组悬臂梁由两个对称的悬臂梁构成两个悬臂梁之间CPW传输线的电长度在所测信号频率范围内的中心频率35GHz处为λ/4。为实现未知频率毫米波相位的检测，首先对待测信号的频率进行检测。频率检测通过测量两路在所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号的合成功率实现；相位检测通过将两路在中心频率35GHz处相位差为90度的耦合信号，分别同两路等分后的参考信号合成，同样利用间接加热式微波功率传感器检测合成功率，从而获得待测信号的相位。

The silicon-based cantilever beam T-junction indirect heating millimeter-wave phase detector with unknown frequency has a realization structure mainly composed of a cantilever beam coupling structure, a T-junction, an indirect heating microwave power sensor and a switch. The cantilever beam coupling structure includes two sets of cantilever beams, and each set of cantilever beams is composed of two symmetrical cantilever beams. The electrical length of the CPW transmission line between the two cantilever beams is λ/4 at the center frequency of 35 GHz within the measured signal frequency range. In order to realize the detection of the unknown frequency millimeter wave phase, the frequency of the signal to be tested is firstly detected. Frequency detection is realized by measuring the combined power of two coupled signals with a phase difference of 90 degrees at a center frequency of 35 GHz within the frequency range of the measured signal; phase detection is achieved by combining two coupled signals with a phase difference of 90 degrees at a center frequency of 35 GHz , which are respectively synthesized with two equally divided reference signals, and the synthesized power is also detected by an indirect heating microwave power sensor, so as to obtain the phase of the signal to be measured.

硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器Unknown Frequency Millimeter-Wave Phase Detector with Indirect Heating T-junction of Silicon-Based Cantilever Beam

技术领域technical field

本发明提出了一种硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器，属于微电子机械系统(MEMS)的技术领域。The invention provides a silicon-based cantilever beam T-junction indirectly heated millimeter-wave phase detector with unknown frequency, which belongs to the technical field of micro-electro-mechanical systems (MEMS).

背景技术Background technique

在微波技术领域，相位是微波信号的重要参数之一，微波信号相位检测在微波信号的产生、传播和接收的各个环节中都有着极其重要的作用，是电磁测量不可缺少的一部分。在实际应用中，微波信号相位检测系统可用于测量物体的方位角、提取运动物体的多普勒频移、相控阵雷达以及测量器件的相位特性等。微波信号相位检测的方法主要有两种：信号分解法和矢量合成法。矢量合成法同信号分解法相比，具有结构原理简单、工作频带宽、无源检测等优点，同时易通过已经成熟的MEMS工艺实现，实现微波信号检测系统的小型化和集成化。长为1～10毫米的电磁波称为毫米波，属于较高频率的微波，由于具有较大的带宽和较窄的波束，实现毫米波相位的检测有着重要的意义。In the field of microwave technology, phase is one of the important parameters of microwave signals. Microwave signal phase detection plays an extremely important role in all aspects of microwave signal generation, propagation and reception, and is an indispensable part of electromagnetic measurement. In practical applications, the microwave signal phase detection system can be used to measure the azimuth angle of the object, extract the Doppler frequency shift of the moving object, phased array radar, and measure the phase characteristics of the device. There are two main methods of microwave signal phase detection: signal decomposition method and vector synthesis method. Compared with the signal decomposition method, the vector synthesis method has the advantages of simple structure principle, wide operating frequency range, and passive detection. At the same time, it is easy to realize through the mature MEMS technology, and realizes the miniaturization and integration of the microwave signal detection system. Electromagnetic waves with a length of 1 to 10 millimeters are called millimeter waves, which belong to higher frequency microwaves. Due to their larger bandwidth and narrower beams, it is of great significance to realize the detection of the millimeter wave phase.

发明内容Contents of the invention

技术问题:本发明的目的是提供一种硅基微机械悬臂梁耦合间接加热式毫米波相位检测器，两组悬臂梁在CPW中央信号线的上方，耦合部分待测信号，两组悬臂梁耦合信号的相位差在所测信号频率范围内的中心频率35GHz处为90度；每组悬臂梁由两个对称的悬臂梁组成，两个悬臂梁耦合的功率相等，其中一个悬臂梁耦合的信号用于耦合功率和频率检测，两种状态转换通过开关实现，另一个悬臂梁耦合的信号用于相位检测，从而完成未知频率毫米波相位的检测。Technical problem: the purpose of this invention is to provide a kind of silicon-based micromechanical cantilever beam coupled indirect heating millimeter-wave phase detector, two groups of cantilever beams are above the CPW central signal line, coupling part of the signal to be measured, two groups of cantilever beams are coupled The phase difference of the signal is 90 degrees at the center frequency of 35 GHz within the frequency range of the measured signal; each group of cantilever beams is composed of two symmetrical cantilever beams, and the power coupled by the two cantilever beams is equal, and the signal coupled by one of the cantilever beams is used For coupled power and frequency detection, the two state transitions are realized through a switch, and the signal coupled by another cantilever beam is used for phase detection, thereby completing the detection of the unknown frequency millimeter wave phase.

技术方案：为解决上述技术问题，本发明提出了一种硅基微机械悬臂梁耦合间接加热式毫米波相位检测器。相位检测器的实现结构选择高阻Si为衬底，由悬臂梁耦合结构、功率合成器/分配器、间接加热式微波功率传感器和开关构成；其中，悬臂梁耦合结构上下、左右对称，由CPW中央信号线、传输线地线、悬臂梁、悬臂梁锚区构成，悬臂梁置于CPW中央信号线的上方，在悬臂梁的下方有一层Si₃N₄介电层覆盖中央信号线；待测信号由悬臂梁耦合结构的第一端口输入，从第二端口输出到下级电路；上方两个悬臂梁耦合的信号由第三端口和第四端口输出，第三端口与第一开关的第七端口相连，第四端口与第二开关的第十端口相连，第一开关的第八端口与第一间接加热式微波功率传感器相连，第九端口与第一T型结的第十三端口相连，第二开关的第十一端口与第二间接加热式微波功率传感器相连，第十二端口与第一功率合成器的第十四端口相连，最后，第一功率合成器的第十五端口接第三间接加热式微波功率传感器；下方两个悬臂梁耦合的信号由第五端口和第六端口输出，第五端口与第三T型结的第十九端口相连，第六端口与第四T型结的第二十二端口相连，待测信号从第二T型结的第十六端口输入，第二T型结的第十七端口与第三T型结的第二十端口相连，第十八端口与第四T型结的第二十三端口相连，第三T型结的第二十一端口接第四间接加热式微波功率传感器，第四T型结的第二十四端口接第五间接加热式微波功率传感器。Technical solution: In order to solve the above technical problems, the present invention proposes a silicon-based micromechanical cantilever coupled indirect heating millimeter-wave phase detector. The implementation structure of the phase detector selects high-resistance Si as the substrate, and is composed of a cantilever beam coupling structure, a power combiner/distributor, an indirect heating microwave power sensor, and a switch; among them, the cantilever beam coupling structure is symmetrical up and down, left and right, and is composed of CPW Central signal line, transmission line ground wire, cantilever beam, and cantilever beam anchorage area. The cantilever beam is placed above the CPW central signal line. There is a layer of Si ₃ N ₄ dielectric layer covering the central signal line under the cantilever beam; the signal to be tested Input from the first port of the cantilever beam coupling structure, output from the second port to the lower circuit; the signals coupled by the two cantilever beams above are output from the third port and the fourth port, and the third port is connected to the seventh port of the first switch , the fourth port is connected to the tenth port of the second switch, the eighth port of the first switch is connected to the first indirect heating microwave power sensor, the ninth port is connected to the thirteenth port of the first T-junction, and the second The eleventh port of the switch is connected to the second indirect heating microwave power sensor, the twelfth port is connected to the fourteenth port of the first power combiner, and finally, the fifteenth port of the first power combiner is connected to the third indirect Heated microwave power sensor; the signals coupled by the two cantilever beams below are output by the fifth port and the sixth port, the fifth port is connected to the nineteenth port of the third T-junction, and the sixth port is connected to the fourth T-junction The twenty-second port is connected, the signal to be tested is input from the sixteenth port of the second T-junction, the seventeenth port of the second T-junction is connected to the twentieth port of the third T-junction, and the eighteenth port It is connected to the twenty-third port of the fourth T-junction, the twenty-first port of the third T-junction is connected to the fourth indirect heating microwave power sensor, and the twenty-fourth port of the fourth T-junction is connected to the fifth indirect Heated microwave power sensor.

T型结由CPW中央信号线、传输线地线以及空气桥构成，其中空气桥用于地线之间的互连，为了方便空气桥的释放，在空气桥上制作了一组小孔阵列。The T-junction is composed of CPW central signal line, transmission line ground wire and air bridge. The air bridge is used for the interconnection between the ground wires. In order to facilitate the release of the air bridge, a set of small hole arrays are made on the air bridge.

待测毫米波信号从第一端口输入，参考信号由第十六端口输入；进行毫米波频率和相位检测时，首先通过开关将耦合信号输入到间接加热式微波功率传感器测出耦合信号的功率大小，接着通过开关将两路所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号输入到T型结，同样使用间接加热式微波功率传感器检测合成信号功率大小，由耦合信号和合成信号的大小可以推算出毫米波信号的频率；另外两路所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号分别和功率等分后的参考信号合成，由间接加热式微波功率传感器检测出两路合成信号功率的大小，联立方程可以求解待测毫米波信号的相位，可实现未知频率毫米波在整个周期范围内相位角的测量。The millimeter-wave signal to be tested is input from the first port, and the reference signal is input from the sixteenth port; when performing millimeter-wave frequency and phase detection, the coupled signal is first input to the indirect heating microwave power sensor through the switch to measure the power of the coupled signal , and then input the coupling signal with a phase difference of 90 degrees at the center frequency of 35 GHz within the frequency range of the two measured signals to the T-junction through the switch, and also use the indirect heating microwave power sensor to detect the power of the synthesized signal, which is determined by the coupling signal and The size of the synthesized signal can be used to calculate the frequency of the millimeter wave signal; the other two coupled signals with a phase difference of 90 degrees at the center frequency of 35 GHz within the frequency range of the measured signal are synthesized with the reference signal after power equalization, and the indirect heating method The microwave power sensor detects the power of the two synthetic signals, and the simultaneous equation can solve the phase of the millimeter wave signal to be measured, and can realize the measurement of the phase angle of the unknown frequency millimeter wave in the entire period range.

有益效果：本发明相对于现有的相位检测器具有以下优点：Beneficial effect: Compared with the existing phase detector, the present invention has the following advantages:

1.本发明的相位检测器采用悬臂梁耦合方式，能够实现在线式的相位检测，待测信号经过检测后可以继续输出到下一级使用；1. The phase detector of the present invention adopts a cantilever beam coupling method, which can realize online phase detection, and the signal to be tested can continue to be output to the next level after being detected;

2.同时可以进行频率检测，从而能够实现未知频率信号的相位检测；2. At the same time, frequency detection can be performed, so that phase detection of unknown frequency signals can be realized;

3.原理和结构简单，版图面积较小，全部由无源器件组成因而不存在直流功耗；3. The principle and structure are simple, the layout area is small, and all of them are composed of passive components, so there is no DC power consumption;

4.本发明的相位检测由于采用间接加热式微波功率传感器实现耦合功率测量，线性度好，动态范围大。4. Since the phase detection of the present invention uses an indirect heating microwave power sensor to realize coupling power measurement, the linearity is good and the dynamic range is large.

附图说明Description of drawings

图1为本发明硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器的实现结构示意图；1 is a schematic diagram of the realization structure of a silicon-based cantilever beam T-junction indirect heating type unknown frequency millimeter-wave phase detector of the present invention;

图2为本发明悬臂梁耦合结构的A-A’向的剖面图；Fig. 2 is the sectional view of the A-A ' direction of cantilever beam coupling structure of the present invention;

图3为本发明T型结的俯视图；Fig. 3 is the top view of T-junction of the present invention;

图4为本发明间接加热式微波功率传感器的俯视图；Fig. 4 is the top view of the indirect heating microwave power sensor of the present invention;

图5为本发明间接加热式微波功率传感器的B-B’向的剖面图；Fig. 5 is the sectional view of B-B ' of indirect heating type microwave power sensor of the present invention;

图6为本发明开关的俯视图；Figure 6 is a top view of the switch of the present invention;

图7为本发明开关的C-C’向的剖面图。Fig. 7 is a cross-sectional view of the C-C' direction of the switch of the present invention.

图中包括：高阻Si衬底1，SiO₂层2，CPW中央信号线3，传输线地线4，悬臂梁5，悬臂梁锚区6，空气桥7，终端电阻8，P型半导体臂9，N型半导体臂10，热电堆金属互连线11，输出Pad12，Si₃N₄介电层13，下拉电极14，悬臂梁耦合结构15，第一开关16，第二开关17，第一端口1-1，第二端口1-2，第三端口1-3，第四端口1-4，第五端口1-5，第六端口1-6，第七端口2-1，第八端口2-2，第九端口2-3，第十端口3-1，第十一端口3-2，第十二端口3-3，第十三端口4-1，第十四端口4-2，第十五端口4-3，第十六端口5-1，第十七端口5-2，第十八端口5-3，第十九端口6-1，第二十端口6-2，第二十一端口6-3，第二十二端口7-1，第二十三端口7-2，第二十四端口7-3。The figure includes: high-resistance Si substrate 1, SiO ₂ layer 2, CPW central signal line 3, transmission line ground wire 4, cantilever beam 5, cantilever beam anchor region 6, air bridge 7, terminal resistor 8, P-type semiconductor arm 9 , N-type semiconductor arm 10, thermopile metal interconnection wire 11, output Pad12, Si ₃ N ₄ dielectric layer 13, pull-down electrode 14, cantilever beam coupling structure 15, first switch 16, second switch 17, first port 1-1, second port 1-2, third port 1-3, fourth port 1-4, fifth port 1-5, sixth port 1-6, seventh port 2-1, eighth port 2 -2, ninth port 2-3, tenth port 3-1, eleventh port 3-2, twelfth port 3-3, thirteenth port 4-1, fourteenth port 4-2, Fifteenth port 4-3, sixteenth port 5-1, seventeenth port 5-2, eighteenth port 5-3, nineteenth port 6-1, twentieth port 6-2, twentieth One port 6-3, twenty-second port 7-1, twenty-third port 7-2, twenty-fourth port 7-3.

具体实施方式detailed description

下面结合附图对本发明的具体实施方式做进一步说明。The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

参见图1-7，本发明提出了一种硅基微机械悬臂梁耦合间接加热式毫米波相位检测器。实现结构主要包括：悬臂梁耦合结构15、T型结、间接加热式微波功率传感器和开关。其中，悬臂梁耦合结构15用于耦合待测信号的部分功率，用于相位检测；T型结为三端口器件，可用于功率分配和功率合成，无需隔离电阻；间接加热式微波功率传感器用于检测微波信号的功率，原理是基于焦耳效应和塞贝克效应；开关用于转换耦合功率检测和频率检测两种状态。Referring to Figures 1-7, the present invention proposes a silicon-based micromachined cantilever coupled indirect heating millimeter-wave phase detector. The realization structure mainly includes: a cantilever beam coupling structure 15, a T-junction, an indirect heating microwave power sensor and a switch. Among them, the cantilever beam coupling structure 15 is used to couple part of the power of the signal to be measured for phase detection; the T-junction is a three-port device, which can be used for power distribution and power synthesis without isolation resistors; the indirect heating microwave power sensor is used for The principle of detecting the power of the microwave signal is based on the Joule effect and the Seebeck effect; the switch is used to switch between two states of coupling power detection and frequency detection.

悬臂梁耦合结构15由CPW中央信号线3、传输线地线4、悬臂梁5、悬臂梁锚区6构成。两组悬臂梁5悬于CPW中央信号线3上方，中间隔有Si₃N₄介质层13和空气，等效一个双介质层的MIM电容，悬臂梁5末端通过悬臂梁锚区6同耦合分支的CPW中央信号线3相连，每组悬臂梁5包括两个对称设计的悬臂梁5，两组悬臂梁5之间的CPW传输线电长度在所测信号频率范围内的中心频率35GHz处为λ/4。通过调整悬臂梁5附近的传输线地线4的形状，改变CPW传输线的阻抗，用于补偿悬臂梁5的引入带来的电容变化。The cantilever beam coupling structure 15 is composed of the CPW central signal line 3 , the transmission line ground line 4 , the cantilever beam 5 , and the cantilever beam anchor area 6 . Two groups of cantilever beams 5 are suspended above the central signal line 3 of the CPW, separated by a Si ₃ N ₄ dielectric layer 13 and air, which is equivalent to a MIM capacitor with a double dielectric layer. The CPW central signal line 3 is connected to each other, and each group of cantilever beams 5 includes two symmetrically designed cantilever beams 5, and the electrical length of the CPW transmission line between the two groups of cantilever beams 5 is λ/ 4. By adjusting the shape of the ground wire 4 of the transmission line near the cantilever beam 5 , the impedance of the CPW transmission line is changed to compensate for the capacitance change caused by the introduction of the cantilever beam 5 .

T型结由CPW中央信号线3、传输线地线4以及空气桥7构成，其中空气桥用于地线之间的互连，为了方便空气桥的释放，在空气桥上制作了一组小孔阵列。The T-junction is composed of CPW central signal line 3, transmission line ground line 4 and air bridge 7, where the air bridge is used for the interconnection between the ground lines. In order to facilitate the release of the air bridge, a set of small holes are made on the air bridge array.

间接加热式微波功率传感器由CPW中央信号线3、传输线地线4、终端电阻8、P型半导体臂9、N型半导体臂10、热电堆金属互连线11、输出Pad12构成。在终端电阻8和热电堆的下方，高阻Si衬底1被刻蚀形成SiO₂薄膜结构，用于增大热电堆的输出灵敏度。微波信号通过CPW传输到终端电阻8耗散为热，在薄膜上形成一定的温度分布，由于热电堆的冷热两端存在一定的温度差，基于Seebeck效应输出正比于温度差的热电势。The indirect heating microwave power sensor is composed of CPW central signal line 3, transmission line ground line 4, terminal resistor 8, P-type semiconductor arm 9, N-type semiconductor arm 10, thermopile metal interconnection line 11, and output Pad12. Below the terminal resistor 8 and the thermopile, the high-resistance Si substrate 1 is etched to form a SiO ₂ film structure, which is used to increase the output sensitivity of the thermopile. The microwave signal is transmitted to the terminal resistor 8 through the CPW and dissipated as heat, forming a certain temperature distribution on the film. Since there is a certain temperature difference between the hot and cold ends of the thermopile, the thermoelectric potential proportional to the temperature difference is output based on the Seebeck effect.

开关由CPW中央信号线3、传输线地线4、悬臂梁5、悬臂梁锚区6和下拉电极14构成，下拉电极14上覆盖有一层Si₃N₄介电层13，未施加直流电压时，两个支路处于断开状态，通过在下拉电极14上施加一定的直流偏置，可实现对应支路的导通，进一步实现耦合功率检测和频率检测两种状态的转换。The switch is composed of a CPW central signal line 3, a transmission line ground line 4, a cantilever beam 5, a cantilever beam anchor area 6 and a pull-down electrode 14. The pull-down electrode 14 is covered with a layer of Si ₃ N ₄ dielectric layer 13. When no DC voltage is applied, The two branches are in the disconnected state, and by applying a certain DC bias on the pull-down electrode 14, the conduction of the corresponding branch can be realized, and the conversion between the two states of coupling power detection and frequency detection can be further realized.

当第一端口1-1输入一定功率的微波信号时，待测信号经过CPW传输线，由第二端口1-2进入下一级。位于CPW中央信号线3上方的悬臂梁5会耦合部分功率，由于每组中两个悬臂梁5对称设计，所以耦合的微波功率相等。两组悬臂梁5中各选一路耦合信号，中心频率f₀＝35GHz处相位差为90度，频率f时相位差可表示为：When a microwave signal of a certain power is input to the first port 1-1, the signal to be tested passes through the CPW transmission line and enters the next stage from the second port 1-2. The cantilever beams 5 located above the central signal line 3 of the CPW will couple part of the power. Since the two cantilever beams 5 in each group are designed symmetrically, the coupled microwave power is equal. Each of the two groups of cantilever beams 5 selects one coupling signal, the phase difference at the center frequency f ₀ =35 GHz is 90 degrees, and the phase difference at the frequency f can be expressed as:

两路耦合信号可以表示为：The two coupled signals can be expressed as:

其中，a₁和a₂分别为两路耦合信号的幅度，ω为输入信号的角频率，为初始相位，通过开关使得耦合信号输入到间接加热式微波功率传感器，可以得到a₁和a₂的大小。合成信号的功率可表示为：Among them, a ₁ and a ₂ are the amplitudes of the two coupled signals, ω is the angular frequency of the input signal, is the initial phase, through the switch to make the coupling signal input to the indirect heating microwave power sensor, the size of a ₁ and a ₂ can be obtained. The power of the composite signal can be expressed as:

为获得合成信号的功率P，通过开关使得耦合信号输入到T型结，并由间接加热式微波功率传感器进行功率检测。由(1)和(4)式，信号频率和输出功率的关系可以表示为：In order to obtain the power P of the synthesized signal, the coupling signal is input to the T-junction through a switch, and the power is detected by an indirect heating microwave power sensor. From (1) and (4), the relationship between signal frequency and output power can be expressed as:

根据上式关系，可由间接加热式微波功率传感器的输出得到待测毫米波信号的频率。According to the above relationship, the frequency of the millimeter wave signal to be measured can be obtained from the output of the indirect heating microwave power sensor.

进行相位检测时，另外两路所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号分别和功率等分后的参考信号合成，功率等分后的参考信号可以表示为：When performing phase detection, the coupled signals with a phase difference of 90 degrees at the center frequency of 35 GHz within the frequency range of the other two measured signals are combined with the reference signal after power equalization. The reference signal after power equalization can be expressed as:

v₃＝a₃cos(ωt+φ) (6)v ₃ ＝a ₃ cos(ωt+φ) (6)

则合成信号的功率大小分别为：Then the power of the synthesized signal is:

P₁和P₂的大小由终端的微波功率传感器进行检测，根据(10)和(11)所示待测信号相位和合成信号功率的大小的关系，只存在一个未知量，由间接加热式微波功率传感器的输出热电势可以得到待测毫米波信号的相位，可实现未知频率毫米波在整个周期范围内相位角的测量。The size of P ₁ and P ₂ is detected by the microwave power sensor of the terminal. According to the relationship between the phase of the signal to be tested and the power of the synthesized signal shown in (10) and (11), there is only An unknown quantity, the phase of the millimeter wave signal to be measured can be obtained from the output thermoelectric potential of the indirect heating microwave power sensor, which can realize the measurement of the phase angle of the unknown frequency millimeter wave in the entire period range.

本发明的硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器实现结构的制备方法如下：The preparation method of the silicon-based cantilever beam T-junction indirect heating type unknown frequency millimeter wave phase detector of the present invention is as follows:

1)准备4英寸高阻Si衬底1，电导率为4000Ωcm，厚度为400μm；1) Prepare a 4-inch high-resistance Si substrate 1 with a conductivity of 4000 Ωcm and a thickness of 400 μm;

2)热生长一层SiO₂层2，厚度为1.2μm；2) Thermally grow a SiO ₂ layer 2 with a thickness of 1.2 μm;

3)化学气相淀积(CVD)生长一层多晶硅，厚度为0.4μm；3) A layer of polysilicon is grown by chemical vapor deposition (CVD) with a thickness of 0.4 μm;

4)涂覆一层光刻胶并光刻，除多晶硅电阻区域暴露以外，其他区域被光刻胶保护，接着注入磷(P)离子，掺杂浓度为10¹⁵cm^-2，形成终端电阻8；4) Coating a layer of photoresist and photolithography, except for the exposed polysilicon resistance area, other areas are protected by photoresist, and then implanting phosphorus (P) ions with a doping concentration of 10 ¹⁵ cm ^-2 to form a terminal resistance 8 ;

5)涂覆一层光刻胶，用P⁺光刻板进行光刻，除P型半导体臂区域暴露以外，其他区域被光刻胶保护，接着注入硼(B)离子，掺杂浓度为10¹⁶cm^-2，形成热电偶的P型半导体臂9；5) Coat a layer of photoresist, and use a P ⁺ photolithography plate for photolithography. Except for the exposed P-type semiconductor arm area, other areas are protected by photoresist, and then boron (B) ions are implanted with a doping concentration of 10 ¹⁶ cm ^-2 , forming a P-type semiconductor arm 9 of a thermocouple;

6)涂覆一层光刻胶，用N⁺光刻板进行光刻，除N型半导体臂区域暴露以外，其他区域被光刻胶保护，接着注入磷(P)离子，掺杂浓度为10¹⁶cm^-2，形成热电偶的N型半导体臂10；6) Coat a layer of photoresist, and use N ⁺ photolithography plate for photolithography. Except for the exposed N-type semiconductor arm area, other areas are protected by photoresist, and then implant phosphorus (P) ions with a doping concentration of 10 ¹⁶ cm ^-2 , forming an N-type semiconductor arm 10 of a thermocouple;

7)涂覆一层光刻胶，光刻热电堆臂和多晶硅电阻图形，再通过干法刻蚀形成热电偶臂和多晶硅电阻；7) Coating a layer of photoresist, photoetching thermopile arms and polysilicon resistance patterns, and then forming thermocouple arms and polysilicon resistances by dry etching;

8)涂覆一层光刻胶，光刻去除传输线、热电堆金属互连线11、下拉电极14以及输出Pad12处的光刻胶；8) Coating a layer of photoresist, removing the photoresist at the transmission line, thermopile metal interconnection line 11, pull-down electrode 14 and output Pad12 by photolithography;

9)电子束蒸发形成第一层金(Au)，厚度为0.3μm，去除光刻胶以及光刻胶上的Au，剥离形成传输线的第一层Au、热电堆金属互连线11、下拉电极14以及输出Pad12；9) Electron beam evaporation forms the first layer of gold (Au) with a thickness of 0.3 μm, removes the photoresist and Au on the photoresist, peels off the first layer of Au forming the transmission line, the thermopile metal interconnection line 11, and the pull-down electrode 14 and output Pad12;

10)LPCVD淀积一层Si₃N₄，厚度为0.1μm；10) LPCVD deposits a layer of Si ₃ N ₄ with a thickness of 0.1 μm;

11)涂覆一层光刻胶，光刻并保留悬臂梁5下方的光刻胶，干法刻蚀Si₃N₄，形成Si₃N₄介电层13；11) Coating a layer of photoresist, photoetching and retaining the photoresist under the cantilever beam 5, dry etching Si ₃ N ₄ to form a Si ₃ N ₄ dielectric layer 13;

12)均匀涂覆一层聚酰亚胺并光刻图形，厚度为2μm，保留悬臂梁5下方的聚酰亚胺作为牺牲层；12) Uniformly coat a layer of polyimide and photolithographically pattern it, with a thickness of 2 μm, and keep the polyimide below the cantilever beam 5 as a sacrificial layer;

13)涂覆光刻胶，光刻去除悬臂梁5、悬臂梁锚区6、传输线以及输出Pad12位置的光刻胶；13) Coating photoresist, removing the photoresist at the position of cantilever beam 5, cantilever beam anchor region 6, transmission line and output Pad12 by photolithography;

14)蒸发500/1500/300A°的Ti/Au/Ti的种子层，去除顶部的Ti层后再电镀一层厚度为2μm的Au层；14) Evaporate the seed layer of Ti/Au/Ti at 500/1500/300A°, remove the top Ti layer and then electroplate an Au layer with a thickness of 2 μm;

15)去除光刻胶以及光刻胶上的Au，形成悬臂梁5、悬臂梁锚区6、传输线和输出Pad12；15) removing the photoresist and Au on the photoresist to form the cantilever beam 5, the cantilever beam anchor region 6, the transmission line and the output Pad12;

16)深反应离子刻蚀(DRIE)衬底材料背面，制作热电堆下方的薄膜结构；16) Deep Reactive Ion Etching (DRIE) on the back of the substrate material to make a thin film structure under the thermopile;

17)释放聚酰亚胺牺牲层：显影液浸泡，去除悬臂梁5下的聚酰亚胺牺牲层，去离子水稍稍浸泡，无水乙醇脱水，常温下挥发，晾干。17) Release the polyimide sacrificial layer: soak in developer solution, remove the polyimide sacrificial layer under the cantilever beam 5, soak in deionized water for a while, dehydrate with absolute ethanol, volatilize at room temperature, and dry in the air.

区分是否为该结构的标准如下：The criteria for distinguishing whether it is the structure are as follows:

本发明的硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器，结构的衬底材料为高阻Si。待测毫米波信号由端口1-1输入，由端口1-2输出，位于CPW中央信号线3上方的两组悬臂梁5耦合部分待测毫米波信号，每组悬臂梁5包括两个对称设计的悬臂梁5，两个悬臂梁5耦合的功率相等，其中一个悬臂梁5的耦合信号用于耦合功率和频率检测，两种状态转换通过开关实现，另一个悬臂梁5的耦合信号用于相位检测；首先通过开关使得耦合信号直接输入到间接加热式微波功率传感器检测耦合功率大小，接着通过开关使得两路在所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号进行合成并由间接加热式微波功率传感器检测合成功率，从而推算出待测信号的频率；相位检测时，将两路在所测信号频率范围内的中心频率35GHz处相位差为90度的耦合信号，分别同两路等分后的参考信号合成，同样利用间接加热式微波功率传感器检测合成功率，从而获得待测信号的相位。In the silicon-based cantilever beam T-junction indirect heating unknown frequency millimeter wave phase detector of the present invention, the substrate material of the structure is high-resistance Si. The millimeter-wave signal to be tested is input from port 1-1 and output from port 1-2. Two sets of cantilever beams 5 located above the CPW central signal line 3 couple part of the millimeter-wave signal to be tested. Each set of cantilever beams 5 includes two symmetrical designs cantilever beam 5, the coupled power of the two cantilever beams 5 is equal, the coupling signal of one cantilever beam 5 is used for coupling power and frequency detection, the two state transitions are realized by switches, and the coupling signal of the other cantilever beam 5 is used for phase Detection: firstly, through the switch, the coupling signal is directly input to the indirect heating microwave power sensor to detect the coupling power, and then through the switch, two coupling signals with a phase difference of 90 degrees at the center frequency of 35 GHz within the frequency range of the measured signal are synthesized The combined power is detected by the indirect heating microwave power sensor, so as to calculate the frequency of the signal to be tested; during phase detection, two coupled signals with a phase difference of 90 degrees at the center frequency of 35 GHz within the frequency range of the signal to be tested are respectively Combining with the reference signal after two equal divisions, the indirect heating microwave power sensor is also used to detect the combined power, so as to obtain the phase of the signal to be measured.

满足以上条件的结构即视为本发明的硅基悬臂梁T型结间接加热式未知频率毫米波相位检测器。A structure satisfying the above conditions is regarded as the silicon-based cantilever beam T-junction indirect heating millimeter-wave phase detector with unknown frequency of the present invention.