CN108206244A - Organic light-emitting display device and preparation method thereof - Google Patents

Specific embodiment

For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein Described embodiment.On the contrary, the purpose of providing these embodiments is that make to understand more the disclosure Add thorough and comprehensive.

Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention The normally understood meaning of technical staff is identical.Term used herein is intended merely to the mesh of description specific embodiment , it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more relevant Listed Items Arbitrary and all combination.

For example, a kind of preparation method of organic light-emitting display device, including：Substrate is provided；Sun is formed on the substrate Pole layer；Organic luminous layer is formed on the anode layer；Cathode layer is formed on the organic luminous layer；Pass through opening for mask plate Mouthful, using plasma bombardment mode will be described in part corresponding with the opening on the substrate cathode layer and part Organic luminous layer etching removal；Cover board with glass outer material and inner layer glass material is provided；By the substrate and the cover board The glass outer material and the inner layer glass material are sintered by fitting, form outer envelope layer and internal layer encapsulated layer so that described Substrate is connect with the cover plate for sealing；The substrate and the cover board are punched in position in the internal layer encapsulated layer, Form organic light-emitting display device with holes.

It in above-described embodiment, is etched compared to conventional laser, plasma bombardment mode along internal layer encapsulated layer without carrying out Etching so that highly efficient to the etching of organic material so that production efficiency higher；It is etched by plasma bombardment mode, Etching precision higher, and pixel region will not be caused to scald, in addition, without increasing laser equipment in etch step, can cause It is relatively low to etch cost, effectively reduces production cost.

In one embodiment, as shown in Figure 1, providing a kind of preparation method of organic light-emitting display device, including：

Step 102, substrate is provided.

Specifically, which is the substrate with back plane circuitry, for example, the substrate is array substrate.

For example, provide the array substrate for including circuit layer and thin film transistor (TFT).For example, the thin film transistor (TFT) include grid, Interlayer insulating film and source/drain.Specifically, which includes substrate, circuit layer and thin film transistor (TFT), which is glass Substrate, for another example, the substrate are flexible base board.For example, the array substrate is with LTPS (Low Temperature Poly- Silicon, low temperature polycrystalline silicon) substrate.

The circuit layer is used to implement circuit logic, powers for organic electroluminescence device, which is used to control The work of organic electroluminescence device, for example, the thin film transistor (TFT) includes grid, interlayer insulating film and source/drain, for example, should Array substrate includes that substrate, the circuit layer being formed on substrate, the gate insulating layer being formed on circuit layer, to be formed in grid exhausted Grid and formation and the interlayer insulating film on grid, the interlayer insulating film in edge layer offer via, which also wraps Include the source/drain to be formed in via.

For example, further include step before step 102：Prepare array substrate.

For example, circuit layer is formed on substrate, for example, thin film transistor (TFT) is formed on substrate, for example, the shape on circuit layer Into gate insulating layer, interlayer insulating film is formed on gate insulating layer, etching forms via on interlayer insulating film, in via Form source/drain.

It should be understood that prior art realization can be used in the array substrate.The grid of the array substrate, layer insulation Layer and source/drain can be realized by evaporation process, and InkJet printing processes realization can also be used.For example, using evaporation process in base Each layer of thin film transistor (TFT) is formed on plate, for another example, forms each layer of thin film transistor (TFT) on substrate using InkJet printing processes.

Step 104, anode layer is formed on the substrate.

For example, the material of anode layer is tin indium oxide (ITO) and metallic silver (Ag), the anode layer including stack gradually the One indium tin oxide layer, silver layer and the second indium tin oxide layer.For example, the thickness of anode layer is 100~300nm, and for another example, the anode Thickness be 200nm.The source/drain of the anode layer and thin film transistor (TFT) connects.

Step 106, organic luminous layer is formed on the anode layer.

For example, the light-emitting zone in anode layer forms organic luminous layer.For example, for example, organic material is deposited on the anode layer Material forms organic luminous layer.For example, it is deposited to form organic luminous layer using fine mask plate.It is noted that the substrate has There are pixel region and bore area, which is formed in pixel region and bore area.The pixel region for showing, use by bore area Through-hole is formed after drilling.

Step 108, cathode layer is formed on the organic luminous layer.

For example, evaporation cathode material forms cathode layer on the organic luminous layer.For example, using OPEN MASK in institute State evaporation cathode layer on organic luminous layer.

In the present embodiment, anode layer, organic luminous layer and cathode layer composition organic electroluminescence device.It is worth mentioning It is that in the present embodiment, prior art preparation, array base all can be used in array substrate, anode layer, organic luminous layer and cathode layer Connection structure between plate, anode layer, organic luminous layer and cathode layer is also that the prior art can be realized, and between each layer Insulating layer and each layer between connection structure prior art realization, not burdensome description in the present embodiment can also be used.

In addition, other functional layers are further included in the organic electroluminescence device, such as flatness layer, passivation layer and protection Layer, organic luminous layer include cavitation layer, electron transfer layer etc., are not described to the greatest extent in the present embodiment, and prior art reality can be used It is existing.Those skilled in the art should understand that the organic electroluminescence device and organic light-emitting display device in above-described embodiment are equal Including above-mentioned functional layer.

Step 110, by the opening of mask plate, using plasma bombardment mode, by the substrate with the opening The organic luminous layer etching removal of the corresponding part cathode layer and part.

Specifically, as shown in Fig. 2, the mask plate 310 in the present embodiment offers opening 311, the position of the opening 311 with The position of the bore area 211 of substrate 210 corresponds to.The plasma moves under the action of electric field, in plasma high-speed motion Cathode layer on substrate 210 is bombarded into removal, and organic luminous layer 220 is bombarded so that organic material of organic luminous layer 220 Expect the removal that is etched.

During etching, mask plate 310 with substrate 210 is aligned, passes through blocking for the mask plate 310 so that plasma is only Pass through from the opening 311 of mask plate 310 so that cathode layer corresponding with the position of opening 311 on plasma bombardment substrate 210 Part and organic luminous layer 220 part, and the cathode layer and organic luminous layer 220 in pixel region are by mask plate 310 Block and will not be etched, that is to say, that using plasma bombard mode, by the cathode layer on substrate 210 in bore area Part and organic luminous layer 220 partial etching removal.

It is noted that when using plasma bombardment mode performs etching substrate, the protective layer in bore area Etc. functional layers be also etched away, not burdensome description in the present embodiment.

It should be understood that in traditional laser ablation, using single laser head, laser head is needed along drilling The side in area removes organic luminous layer etching in bore area, and the stroke of laser head is longer, causes to etch inefficiency, influences to produce Efficiency, also, be limited to the kinematic accuracy and etching precision of laser head, laser are easily burnt the pixel region outside bore area so that Organic light-emitting display device is destroyed.And in the present embodiment, the mode of plasma bombardment performs etching organic luminous layer, By the opening of mask plate, the etching to organic luminous layer is entire etching, that is to say, that compared to traditional laser ablation Line etching be improved to face etching, etching efficiency is effectively increased, so as to improve production efficiency.In addition, plasma bombardment Mode pixel region will not be caused to burn, can effectively avoid damage organic light-emitting display device, and plasma bombardment side Equipment cost needed for the etching of formula is lower compared to the cost of laser equipment.

Step 112, the cover board with glass outer material and inner layer glass material is provided.

For example, the glass outer material and inner layer glass material are formed in the same face of cover board, and inner layer glass material position is in outer layer The inside of frit.Frit can be described as Frit again, for package substrate and cover board.The inside of the inner layer glass material is drilling Area, the bore area of counterpart substrate.Pixel region between glass outer material and inner layer glass material on counterpart substrate.

For example, it is further included before step 112：Using silk screen printing process, glass outer material and internal layer are formed on the cover board Frit, for example, silk-screen forms glass outer material and inner layer glass material on the cover board, for example, the glass outer material and interior The shape of layer frit is round, and therefore, glass outer material and inner layer glass material can be described as outer ring frit and inner ring frit again.

It is noted that step 112 can before step 102 to step 110 or between carry out, step 112 Execution sequence can't impacting to step 102 to step 110, in the present embodiment, only with the step in step 110 Perform citing later, those skilled in the art can be readily apparent that the step 112 can before step 102 to step 110 or It is carried out between person, belongs to protection scope of the present invention

Step 114, the substrate with the cover board is bonded, the glass outer material and the inner layer glass material is burnt Knot forms outer envelope layer and internal layer encapsulated layer so that the substrate is connect with the cover plate for sealing.

In the present embodiment, as shown in figure 3, cover board 400 to be had to the one side of glass outer material 410 and inner layer glass material 420 The one side that organic luminescent device is formed with substrate 210 is bonded.It is bonded for example, the substrate is aligned with the cover board, works as cover board After being bonded with substrate, the region alignment on the inside of inner layer glass material is in the bore area of substrate, for example, the bore area of cover board is aligned in The bore area of substrate is bonded.For example, being sintered the glass outer material and the inner layer glass material by laser, formed outer Layer encapsulated layer and internal layer encapsulated layer so that the substrate is connect with the cover plate for sealing, i.e. glass outer material is sintered to form outer layer Encapsulated layer, inner layer glass material are sintered to form internal layer encapsulated layer, the substrate by outer envelope layer and internal layer encapsulated layer with it is described Cover plate for sealing connects.

Specifically, it is melted after glass outer material and the sintering of inner layer glass material, after cooling, forms outer envelope layer and internal layer envelope Fill layer so that be tightly connected between substrate and cover board by outer envelope layer and internal layer encapsulated layer.

Step 116, the substrate and the cover board are punched in the position in the internal layer encapsulated layer, is formed with holes Organic light-emitting display device.

For example, as shown in Figure 4 and Figure 5, the position in the internal layer encapsulated layer 421 is aligned in the substrate 210 and institute It states cover board 400 to be punched, forms the organic light-emitting display device 20 with through-hole 201, internal layer encapsulated layer 421 and outer envelope It is the viewing area of organic light-emitting display device 20 between layer 411.Specifically, the position in the internal layer encapsulated layer 421 is base The bore area 211 of plate 210, the bore area are also the bore area of organic light-emitting display device simultaneously.In the present embodiment, it has been aligned in The substrate and the cover board are punched in the bore area of machine luminous display unit, for example, being aligned in organic light emitting display dress The bore area put is punched by the side of a lateral cover board of the substrate, for another example, is aligned in organic light emitting display dress The bore area put is punched by the side of a lateral substrate of the cover board.

For example, using laser cutting mode, to the position in the internal layer encapsulated layer to the substrate and the cover board into Row punching；For example, by the cutting of numerically-controlled machine tool, to the position in the internal layer encapsulated layer to the substrate and the cover board into Row punching.

It in above-described embodiment, is etched compared to conventional laser, plasma bombardment mode along internal layer encapsulated layer without carrying out Etching so that highly efficient to the etching of organic material so that production efficiency higher；It is etched by plasma bombardment mode, Etching precision higher, and pixel region will not be caused to scald, in addition, without increasing laser equipment in etch step, can cause It is relatively low to etch cost, effectively reduces production cost.

It is in one embodiment, described to pass through in order to realize the etching to the plasma bombardment mode of organic luminous layer The opening of mask plate, using plasma bombardment mode, by the part cathode layer corresponding with the opening on the substrate The step of organic luminous layer etching removal described with part, includes：In the plasma process chamber for being filled with argon gas, use Radio-frequency drive argon gas generates plasma, and plasma bombardment is carried out to the substrate by the opening of the mask plate, By the organic luminous layer etching removal of part corresponding with the opening on the substrate cathode layer and part.

In the present embodiment, radio frequency (RF, Radio Frequency), also referred to as electromagnetic wave, the electromagnetic wave are used to excite argon gas Generate plasma, argon gas (Ar₂) under the excitation of radio frequency, heavy ion will be generated, the heavy type plasma is in electric field action Lower high-speed motion, bombards cathode layer and organic luminous layer, since the chemical bond of the organic material of organic luminous layer is weaker, Therefore, the chemical bond of organic material is easily broken under the bombardment of plasma, so that organic material of organic luminous layer Material is efficiently etched.

In order to enable the organic material etching in bore area removes more abundant, in one embodiment, it is being filled with In the plasma process chamber of argon gas and oxygen, plasma is generated using radio-frequency drive argon gas, passes through the mask The opening of plate carries out plasma bombardment to the substrate, by described the moon in part corresponding with the opening on the substrate The organic luminous layer etching removal of pole layer and part, and pass through oxygen pair part organic hair corresponding with the opening Photosphere carries out chemical etching.

In the present embodiment, argon gas and oxygen are filled in plasma process chamber, which is used for the excitation in radio frequency Lower generation plasma, the oxygen chemically carry out the organic material of the organic luminous layer for generating free atom Etching.That is, in the present embodiment, as shown in Fig. 2, not using only plasma Ar to cathode layer and organic luminous layer 220 are bombarded, and realize the etching to the cathode layer in bore area and organic luminous layer 220, the freedom also generated by oxygen Atom O⁺Chemical etching is carried out to organic luminous layer 220 so that organic material etching removes more abundant, more thoroughly, keeps away Exempt from organic material to remain in bore area.

In order to enable plasma bombardment etching and chemical etching are better, and in one embodiment, the plasma The mixed proportion of argon gas and oxygen is 98 in body processing chamber housing：2.That is, contain 98% argon in gas ions processing chamber housing Gas and 2% oxygen since argon content is higher in plasma process chamber, reach 98%, can be plasma bombardment There is provided more plasmas so that plasma is easy to be excited so that plasma bombardment is more efficient, and 2% oxygen Gas can generate enough free atoms and chemical etching, effectively organic material in etching removal bore area are carried out to organic material Material.

In one embodiment, the opening by mask plate, using plasma bombardment mode, will be on the substrate The step of corresponding with opening part cathode layer and the part organic luminous layer etching removal, includes：Described in adjustment Position of the substrate between two pole plates, using plasma bombardment mode, by the substrate with the corresponding portion of the opening Divide the cathode layer and part the organic luminous layer etching removal.

Specifically, two pole plates include anode plate and negative plates, in the present embodiment, as shown in fig. 6, two pole plates 500 include top crown 510 and bottom crown 520, wherein, top crown 510 can be anode plate or negative plates, under Pole plate 520 can be negative plates or anode plate, and two pole plates are opposite and are arranged at intervals, and two pole plates 500 are used for Electric field is generated after powered up, that is to say, that electric field, plasma high speed under the action of electric field are formed between two pole plates 500 Movement, according to movement velocity between two pole plates of plasma, and according to the distance between with two pole plates, by two pole plates Between region division for sheaths area 501 and ionized region 502, position of the substrate 210 between two pole plates 500 for GAP ( Gap) distance, by adjusting position of the substrate 210 between two pole plates 500 so that substrate 210 is located at sheaths area 501 or electricity From in area 502, change the rate of plasma bombardment etch rate and chemical etching, so as to adapt to the cathode layer on substrate with And the bombardment etching demand of organic luminous layer, so that bombardment etching effect is more preferably, and fiting chemical etches, further clear Except organic material remaining in bore area.

In order to enable to the cathode layer in bore area and the etching effect of organic luminous layer more preferably, in one embodiment In, the opening by mask plate, using plasma bombardment mode, by the substrate with the corresponding part of the opening The step of cathode layer and part the organic luminous layer etching remove includes：Adjust the position of the substrate so that described Substrate is located at the sheaths area between two pole plates, using plasma bombardment mode, by the substrate with the opening The corresponding part cathode layer etching removal；Adjust the position of the substrate so that the substrate is located at two pole plates Between ionized region, using plasma bombardment mode, by part corresponding with the opening organic hair on the substrate Photosphere etching removal.

As shown in fig. 6, in the present embodiment, two pole plates 500 include top crown 510 and bottom crown 520, between two pole plates It is sheaths area 501 close to the region of two pole plates, the region far from pole plate is ionized region 502, that is to say, that between two pole plates It is sheaths area 501 positioned at the region on two sides edge, is ionized region 502, therefore, the sheaths area of both sides between Liang Ge sheaths area 501 501 respectively close to top crown 510 and bottom crown 520, and positioned at intermediate ionized region 502 then far from top crown 510 and bottom crown 520.Plasma has higher movement velocity in sheaths area 501, and the movement velocity in ionized region 502 is slower.Therefore, originally In embodiment, substrate 210 is adjusted to sheaths area 501, by accelerating plasma first so that plasma high velocity bombardment is cloudy Pole layer so that the cathode layer of metal is etched removal, and to organic luminous layer progress high velocity bombardment so that organic luminous layer is carved Etching off removes, and then, substrate 210 is adjusted to ionized region 502 so that plasma bombardment efficiency reduces so that chemical etching Reaction rate is strengthened, and passes through the organic luminous layer under chemical etching cathode layer so that organic luminous layer can obtain fully Etching.

In order to enable to the etching effect of organic luminous layer in bore area more preferably, in one embodiment, the adjustment institute State the position of substrate so that the substrate is located at the ionized region between two pole plates, and using plasma bombardment mode will It is further included after the step of part organic luminous layer etching corresponding with the opening removes on the substrate：Described in adjustment The position of substrate so that the substrate is located at the sheaths area between two pole plates, using plasma bombardment mode, by institute State the part cathode layer etching removal corresponding with the opening on substrate.

It in the present embodiment, is adjusted by substrate to ionized region, after the reaction effect for strengthening chemical etching, adjusts base again The position of plate adjusts substrate to sheaths area, by the way that plasma bombardment is accelerated to carry out organic material remaining in bore area Etching removal so that remaining organic material can be etched remove it is more abundant, more completely.

By the way that in above-described embodiment, position of the adjustment substrate between two pole plates changes plasma bombardment etching speed The rate of rate and chemical etching so that cathode layer and organic luminous layer on substrate in bore area can fully be etched It removes so that etching is more abundant.

The removal in order to enable cathode layer and organic luminous layer in bore area can fully be etched, for example, during etching Between be more than 120s (second, second), for example, etch period is more than 120s, and less than 140s, it is worth mentioning at this point that, it is traditional Laser ablation removes organic luminous layer, needs the time of ten minutes, and using plasma bombardment etching, etch period can shorten To 2 minutes or so, and the removal in order to enable organic luminous layer can fully be etched, in the present embodiment, etch period is more than 120s, and less than 140s, for example, in the plasma process chamber for being filled with argon gas and oxygen, using plasma bangs It hits mode to perform etching the cathode layer in the bore area on substrate and organic luminous layer, etch period is more than 120s, and small In 140s, in such manner, it is possible to which organic luminous layer is enabled fully to be etched, remaining organic material is effectively removed.On for example, It states in embodiment, adjusts position of the substrate between two pole plates, using plasma bombardment mode, using plasma Bombardment mode performs etching the cathode layer in the bore area on substrate and organic luminous layer, and etch period is more than 120s, and Less than 140s, that is to say, that substrate is adjusted to sheaths area and is performed etching, then substrate is adjusted to ionized region and is performed etching, Then substrate is adjusted to sheaths area again and is performed etching, the etching total duration of this process is more than 120s, and be less than 140s, Organic luminous layer is fully etched, effectively removes remaining organic material.

In order to enable the stimulation effect of plasma is more preferably, it is in one embodiment, described using the production of radio-frequency drive argon gas Raw plasma includes：Frequency is used to generate plasma for the radio-frequency drive argon gas of 13.56MHz.In the radio frequency of 13.56MHz Under, argon gas generates the more efficient of plasma, can effectively improve the efficiency of plasma bombardment etching.In order to generate The radio frequency of 13.56MHz, for example, radio-frequency emission power is 800~1200W, for example, the radio-frequency emission power of radio frequency generator For 800~1200W.

In order to enable etching effect is more preferably, it is in one embodiment, described in the plasma processing chambers for being filled with argon gas Interior generates plasma using radio-frequency drive argon gas, by the opening of the mask plate substrate is carried out etc. from Daughter is bombarded, and part corresponding with the opening on the substrate cathode layer and part the organic luminous layer etching are gone Except the step of before further include：It is 10 to provide vacuum level^-4The vacuum chamber of pa；Argon gas, shape are injected in the vacuum chamber Into the plasma process chamber for being filled with argon gas.For example, injecting argon gas and oxygen in the vacuum chamber, note is formed The plasma process chamber of argon gas and oxygen is entered.For example, 98% argon gas and 2% is injected in the vacuum chamber The mixed gas of oxygen forms the plasma process chamber for being filled with argon gas and oxygen.

In the present embodiment, vacuum chamber is vacuumized first so that the indoor vacuum level of vacuum chamber reaches 10^-4Pa, with Afterwards plasma process chamber is formed to injecting argon gas and nitrogen in vacuum chamber so that in plasma process chamber again Argon gas and nitrogen content are more accurate, other impurities gas are effectively avoided to be mixed into plasma process chamber, due to plasma The indoor gas of body processing chamber is more pure, enables to etching effect more preferably.

In order to enable the organic material etched away can be quickly eliminated, it is in one embodiment, described to use plasma Body bombards mode, and part corresponding with the opening on the substrate cathode layer and the part organic luminous layer are etched It is further included after the step of removal：The organic material of the organic luminous layer for the removal that is etched is taken out using vacuum generator From.

In one embodiment, a kind of organic light-emitting display device is provided, the organic light-emitting display device is using above-mentioned The preparation method of organic light-emitting display device described in any embodiment is prepared.

Here is the specific embodiment of the preparation method of an organic light-emitting display device：

1) according to conventional LTPS techniques, back plane circuitry and anode are made on the glass substrate.Punch position and encapsulated layer position It puts and removes all metal and photoresist.

2) according to conventional OLED techniques, luminous organic material is deposited on backboard, wherein, functional layer and cathode use OPEN MASK is deposited, and organic luminous layer is deposited using FINE MASK.

3) silk-screen Frit (glass dust encapsulation) pattern on cover board, includes outer circular pattern Frit1 and interior circular pattern Frit2.

4) substrate is transmitted to 10^-4PT (plasma treat, corona treatment) chamber of pa grade vacuum environments, is filled with The mixed gas of Ar2+O2, mixed proportion are set as 98%Ar2+2%O2, after the content of mixed gas reaches setting volume (being judged by monitoring chamber air pressures), RF on perform etching inner ring with the plasma of 13.56MHZ stimulating frequencies and seal The organic material in the range of layer is filled, physics exists with chemical etching at this time, and Ar2 generates heavy ion bombardment substrate surface and breaks The chemical bond of organic matter fragility, O2 generate free atom chemically ablation organic matter, and the two combination can improve etching speed.

5) it can be carried out according to the following steps in plasma (plasma) processing：1. pole plate is set to glass baseplate surface Gap distances make substrate 2. bombard a timing in the sheet metal cathode for ion bombardment being accelerated to fall surface close to the sheaths area of pole plate Between after adjust gap distances again substrate made to be in ionized region, the organic layer strengthened under chemical reaction rate etching cathode is 3. chemical Adjustment gap distances make substrate be in sheaths area to etching again after a certain period of time, accelerate bombardment organic layer residual.Pass through this change Gap distances improve whole plasma etch rates in a manner of making substrate in differential responses region, and the power of radio frequency is set It is set to 800~1200W, because plasma handles the thickness per second that can only penetrate several nanometers, entire etch period ensures More than 120s is advisable, according to the processing time of different each steps of thicknesses of layers reasonable distribution.

6) substrate is bonded with the rear cover with frit patterns, circular pattern and outer loop graph out of real estate or cover board face laser Frit1 and Frit2 is sintered, is contacted with substrates into intimate by case.

7) AMOLED punching products are become using punch device to being punched in inner ring, after cutting.

Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, it is all considered to be the range of this specification record.

Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.