CN110993756A - LED chip and method of making the same - Google Patents
- ️Fri Apr 10 2020
CN110993756A - LED chip and method of making the same - Google Patents
LED chip and method of making the same Download PDFInfo
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- CN110993756A CN110993756A CN201911311574.XA CN201911311574A CN110993756A CN 110993756 A CN110993756 A CN 110993756A CN 201911311574 A CN201911311574 A CN 201911311574A CN 110993756 A CN110993756 A CN 110993756A Authority
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
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Abstract
The invention provides an LED chip and a manufacturing method thereof, wherein the LED chip comprises: a substrate; the light limiting layer is positioned on the back surface of the substrate and is provided with a light outlet window; the light-emitting epitaxial structure is positioned on the front surface of the substrate and at least comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and the light-emitting epitaxial structure is provided with an electrode step penetrating to the surface of the N-type semiconductor layer; the current expansion layer is positioned on the P-type semiconductor layer; the reflecting layer covers the electrode steps and the front and the side of the light-emitting epitaxial structure; the N electrode passes through the reflecting layer at the electrode step and is in contact with the N-type semiconductor layer; and a P electrode contacting the current spreading layer through the reflective layer. The invention can effectively reduce the light-emitting angle of the LED chip, and greatly reduce the problems of color cast and color crosstalk among pixels of an LED display screen made of the LED chip under a large deflection angle viewing angle.
Description
Technical Field
The invention belongs to the technical field of LED manufacturing, and particularly relates to an LED chip and a manufacturing method thereof.
Background
With the increasing indoor Display application technology, currently used Display application products such as projection, DLP (Digital light processing), LCD (Liquid Crystal Display), PDP (plasma Display Panel), and the like cannot completely meet the market application requirements. There are also some drawbacks in various aspects that make it impossible to break through the technological development. And the LED (Light Emitting Diode) full-color display screen overcomes the defects of the products, and becomes the first choice for indoor and outdoor large-screen display, such as occasions of command centers, outdoor advertising screens, conference centers and the like.
Generally, the LED display screen is seamlessly spliced into a large-sized display screen by a certain number of small-sized display screen modules. The manufacturing method of the small-spacing display screen module comprises the following steps: 1. discrete devices (SMDs); 2. the IMD is used for packaging the Mini LED in four-in-one mode; 3. chip On Board (COB for short). The Mini LED is also called a sub-millimeter LED, and the size of the Mini LED is usually 80 to 200 micrometers. At present, the minimum point distance of the LED display screen is 0.9375mm, but the market has wide requirements on the LED display screen with the smaller point distance. The picture can be clearer due to the small dot spacing. However, when the dot pitch is smaller than 0.7mm, both the SMD method and the IMD method cannot meet the requirements, and only the COB method can manufacture an LED display screen with a smaller dot pitch.
In the current process of manufacturing the small-spacing LED display screen module by using a COB method, the used chip is an inverted MiniLED chip. Three kinds of Mini LED chips of red, green and blue are needed to realize full-color display. Due to the inconsistency of the three chip materials and the light-emitting wavelength, the light-emitting angles of the three chips are inconsistent, for example, the light-emitting angle of red light is 120 degrees, the light-emitting angles of green light and blue light are 140 degrees, so that the LED display screen has an obvious color cast phenomenon under the condition of viewing at a large deflection angle. In addition, due to the limitation of the packaging structure, the existence of the side light of the chip is difficult to avoid, so that the color crosstalk problem of different degrees exists among the pixels of the LED display screen, and the problem is more serious when the distance is smaller.
Therefore, how to provide an LED chip with less side light to alleviate the color shift and color crosstalk between pixels of an LED display screen made of such a chip under a large off-angle viewing angle is an important technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an LED chip and a method for manufacturing the same, which are used to solve the problems of color cast and color crosstalk between pixels of an LED display screen under a large off-angle viewing angle in the prior art.
To achieve the above and other related objects, the present invention provides an LED chip, comprising: a substrate; the light limiting layer is positioned on the back surface of the substrate and is provided with a light outlet window; the light-emitting epitaxial structure is positioned on the front surface of the substrate and at least comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and the light-emitting epitaxial structure is provided with an electrode step penetrating to the surface of the N-type semiconductor layer; the current expansion layer is positioned on the P-type semiconductor layer; the reflecting layer covers the electrode steps and the front and the side faces of the light-emitting epitaxial structure; an N electrode which passes through the reflective layer at the electrode step and contacts the N-type semiconductor layer; a P electrode contacting the current spreading layer through the reflective layer.
Optionally, the LED chip comprises a Mini LED chip.
Optionally, the material of the substrate includes one of sapphire, silicon carbide, and silicon.
Optionally, the light emitting epitaxial structure further includes a buffer layer, an intrinsic semiconductor layer, and an electron blocking layer, the electron blocking layer is located between the light emitting layer and the P-type semiconductor layer, the buffer layer includes one of an aluminum nitride buffer layer and a gallium nitride buffer layer, and the intrinsic semiconductor layer includes a non-doped gallium nitride layer.
Optionally, the N-type semiconductor layer includes an N-type gallium nitride layer, the P-type semiconductor layer includes a P-type gallium nitride layer, and the light emitting layer includes a quantum well superlattice layer.
Optionally, the N electrode includes an N-type bottom electrode and an N-type external electrode, the N-type bottom electrode is located on the surface of the N-type semiconductor layer at the electrode step, and the N-type external electrode passes through the reflective layer and is connected to the N-type bottom electrode; the P-type bottom electrode is positioned on the surface of the current expansion layer, and the P-type external electrode penetrates through the reflecting layer and is connected with the P-type bottom electrode.
Optionally, the N-type bottom electrode is flush with a top surface of the P-type bottom electrode, and the N-type external electrode is flush with a top surface of the P-type external electrode.
Optionally, the LED chip further includes a peripheral step, the peripheral step is annular and penetrates through the P-type semiconductor layer, the light emitting layer and the N-type semiconductor layer, and exposes a part of the surface of the substrate, and the reflective layer covers the electrode step and the front surface of the light emitting epitaxial structure, and covers the side surface of the light emitting epitaxial structure with the peripheral step.
Optionally, the light limiting layer includes a metal layer, and a material of the metal layer includes a lamination of one or more of chromium, silver, gold, and copper.
Optionally, the shape of the light exit window comprises one of a rectangle, a circle and an ellipse.
The invention also provides an LED display screen which comprises the LED pixel array made of the LED chip.
The invention also provides a manufacturing method of the LED chip, which comprises the following steps: 1) providing a substrate, and forming a light-emitting epitaxial structure on the substrate, wherein the light-emitting epitaxial structure at least comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer; 2) etching an electrode step penetrating to the N-type semiconductor layer in the light-emitting epitaxial structure; 3) forming a current spreading layer on the P-type semiconductor layer; 4) forming an N-type bottom electrode and a P-type bottom electrode on the electrode step and the current spreading layer respectively; 5) forming a reflecting layer on the electrode step and the front surface and the side surface of the light-emitting epitaxial structure; 6) forming the second through hole and the first through hole in the reflective layer, wherein the second through hole exposes the N-type bottom electrode, and the first through hole exposes the P-type bottom electrode; 7) manufacturing an N-type external electrode and a P-type external electrode based on the second through hole and the first through hole; 8) thinning the back of the substrate; 9) and manufacturing a light limiting layer on the back surface of the substrate, and forming a light outlet window in the light limiting layer.
Optionally, steps 2) to 3) further include: etching a peripheral step in the light-emitting epitaxial structure, wherein the peripheral step is annular and penetrates through the P-type semiconductor layer, the light-emitting layer and the N-type semiconductor layer and exposes partial surface of the substrate, and 5) the reflecting layer covers the side face of the light-emitting epitaxial structure through the peripheral step.
Optionally, the LED chip comprises a Mini LED chip.
Optionally, the light emitting epitaxial structure further includes a buffer layer, an intrinsic semiconductor layer, and an electron blocking layer, the electron blocking layer is located between the light emitting layer and the P-type semiconductor layer, the buffer layer includes one of an aluminum nitride buffer layer and a gallium nitride buffer layer, and the intrinsic semiconductor layer includes a non-doped gallium nitride layer.
Optionally, the N-type semiconductor layer includes an N-type gallium nitride layer, the P-type semiconductor layer includes a P-type gallium nitride layer, and the light emitting layer includes a quantum well superlattice layer.
Optionally, the N-type bottom electrode is flush with a top surface of the P-type bottom electrode, and the N-type external electrode is flush with a top surface of the P-type external electrode.
Optionally, the light limiting layer includes a metal layer, and a material of the metal layer includes a lamination of one or more of chromium, silver, gold, and copper.
Optionally, the shape of the light exit window comprises one of a rectangle, a circle and an ellipse.
Optionally, step 8) comprises: bonding the front surface of the LED chip to the temporary substrate, and then thinning the back surface of the substrate by adopting a grinding and polishing machine; the step 9) is followed by a step of removing the temporary substrate.
Optionally, a temporary bonding glue is used to bond the front surface of the LED chip to the temporary substrate, and the composition of the temporary bonding glue includes acrylic acid.
As described above, the LED chip and the manufacturing method thereof of the present invention have the following advantages:
according to the LED chip, the light limiting layer is formed on the light emitting surface of the LED chip to limit the light emitting angle of the LED chip, and meanwhile, the Bragg reflecting layer covers the side wall of the LED chip, so that crosstalk between light on the side surface of the LED chip can be effectively avoided. The invention can effectively reduce the light-emitting angle of the LED chip, and greatly reduce the problems of color cast and color crosstalk among pixels of an LED display screen made of the LED chip under a large deflection angle viewing angle.
Drawings
Fig. 1 to 13 are schematic structural diagrams of steps of a method for manufacturing an LED chip according to the present invention, wherein fig. 13 is a schematic structural diagram of an LED chip according to the present invention.
Description of the element reference numerals
101 substrate
102 buffer layer
103 intrinsic semiconductor layer
104N type semiconductor layer
105 light-emitting layer
106 electron blocking layer
107P type semiconductor layer
108 current spreading layer
109N type bottom electrode
110P type bottom electrode
111 reflective layer
112a first via hole
112b second through hole
113P type external electrode
114N type external electrode
115 light limiting layer
115a electrode step
115b peripheral step
116 temporary substrate
117 light exit window
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 13, the present embodiment provides an LED chip, for example, the LED chip may be a Mini LED chip (sub-millimeter light emitting diode), the size of the Mini LED chip may be between 80 micrometers and 200 micrometers, and the LED chip includes a
substrate101, a light emitting epitaxial structure, a current spreading
layer108, a
reflective layer111, an N electrode, and a P electrode.
The material of the
substrate101 includes one of sapphire, silicon carbide, and silicon. For example, in the present embodiment, the material of the
substrate101 is selected to be sapphire.
The
light limiting layer115 is located on the back surface of the
substrate101, and the
light limiting layer115 is provided with a
light outlet window117. The light-limiting
layer115 is an opaque material, and may be a metal layer, for example, the material of the metal layer includes one or more than two stacked layers of chromium, silver, gold, and copper. As shown in fig. 12, the shape of the
light exit window117 includes one of a rectangle, a circle and an ellipse. Of course, the light-limiting
layer115 may also be other opaque materials, and is not limited to the examples listed herein, and the shape of the light-exiting
window117 may also be a rounded rectangle or any other desired shape, and is not limited to the examples listed herein. The light-limiting
layer115 can reduce the light-emitting angle of the LED chip, and greatly reduce the color cast and color crosstalk between pixels of an LED display screen made of the LED chip at a large deflection angle viewing angle.
The light emitting epitaxial structure is located on the front surface of the
substrate101, and comprises a
buffer layer102, an
intrinsic semiconductor layer103, an N-
type semiconductor layer104, a
light emitting layer105, an
electron blocking layer106 and a P-
type semiconductor layer107, and has an
electrode step115a penetrating to the surface of the N-
type semiconductor layer104. The
buffer layer102 includes one of an aluminum nitride buffer layer and a gallium nitride buffer layer, the thickness range of the buffer layer is 10-30 nanometers, such as 15 nanometers and 20 nanometers, the
intrinsic semiconductor layer103 includes an undoped gallium nitride layer, the N-
type semiconductor layer104 includes an N-type gallium nitride layer, the P-
type semiconductor layer107 includes a P-type gallium nitride layer, and the
light emitting layer105 includes a quantum well superlattice layer.
The LED chip further includes an annular
peripheral step115b, wherein the
peripheral step115b penetrates through the P-
type semiconductor layer107, the
light emitting layer105 and the N-
type semiconductor layer104, and exposes a portion of the surface of the
substrate101.
The current spreading
layer108 is positioned on the P-
type semiconductor layer107; the current spreading
layer108 may be a transparent conductive layer made of, but not limited to, Indium Tin Oxide (ITO), and the thickness of the transparent conductive layer is 10 to 100 nm, for example, 30 nm. The current spreading
layer108 can effectively improve the uniformity of the injected current and improve the utilization efficiency of the current.
The
reflective layer111 covers the
electrode step115a and the front and side surfaces of the light emitting epitaxial structure. In this embodiment, the
reflective layer111 covers the
electrode step115a and the front surface of the light emitting epitaxial structure, and covers the side surface of the light emitting epitaxial structure by the
peripheral step115 b. Through the
peripheral step115b, potential leakage channels can be effectively reduced, and the antistatic performance of the chip is improved.
The reflective layer may be a bragg reflective layer, and the bragg
reflective layer111 is formed by multiple layers of SiO2/Ti3O5And stacking the materials. In this embodiment, a thin silicon dioxide layer is further disposed on the lower surface of the
bragg reflector111 to provide better insulation performance and improve the adhesion of the
bragg reflector111.
The N-electrode contacts the N-
type semiconductor layer104 through the
reflective layer111 at the
electrode step115a, and the P-electrode contacts the current spreading
layer108 through the
reflective layer111. The N-type electrode comprises an N-
type bottom electrode109 and an N-type
external electrode114, the N-
type bottom electrode109 is located on the surface of the N-
type semiconductor layer104 at the
electrode step115a, and the N-type
external electrode114 passes through the
reflective layer111 and is connected with the N-
type bottom electrode109; the P-type electrode includes a P-
type bottom electrode110 and a P-type
external electrode113, the P-
type bottom electrode110 is located on the surface of the current spreading
layer108, and the P-type
external electrode113 passes through the
reflective layer111 and is connected to the P-
type bottom electrode110. The N-
type bottom electrode109 is flush with the top surface of the P-
type bottom electrode110, and the N-type
external electrode114 is flush with the top surface of the P-type
external electrode113.
The embodiment also provides an LED display screen, which includes an LED pixel array made of the LED chip as described above.
As shown in fig. 1 to 13, this embodiment further provides a method for manufacturing an LED chip, where the LED chip may be a Mini LED chip, and the size of the Mini LED chip may be between 80 micrometers and 200 micrometers, and the method includes the steps of:
as shown in fig. 1, step 1) is first performed, a
substrate101 is provided, and a light emitting epitaxial structure including a
buffer layer102, an
intrinsic semiconductor layer103, an N-
type semiconductor layer104, a
light emitting layer105, an
electron blocking layer106, and a P-
type semiconductor layer107 is formed on the
substrate101.
Specifically, the
sapphire substrate101 or the
silicon carbide substrate101 may be fed into a magnetron sputtering station, and an AlN buffer layer may be deposited on the
sapphire substrate101 or the
silicon carbide substrate101, and the thickness of the AlN buffer layer may be 10 to 20 nanometers, such as 15 nanometers. The
sapphire substrate101 or the
silicon carbide substrate101 may also be fed into an MOCVD (metal oxide chemical vapor deposition) reaction chamber, and a low temperature gallium nitride buffer layer may be deposited on the
sapphire substrate101 or the
silicon carbide substrate101, and may have a thickness of 10 to 30 nm, such as 20 nm.
Then, the
substrate101 on which the
buffer layer102 is grown may be fed into an MOCVD reaction chamber, and the
intrinsic semiconductor layer103, the N-
type semiconductor layer104, the
light emitting layer105, the
electron blocking layer106, and the P-
type semiconductor layer107 may be sequentially grown thereon to form a wafer.
As shown in fig. 2 to 3, step 2) is then performed, and an
electrode step115a penetrating to the N-
type semiconductor layer104 is etched in the light emitting epitaxial structure.
Specifically, the
electrode step115a may be etched by using an inductively coupled plasma etching (ICP) process, so that a portion of the N-
type semiconductor layer104 is exposed.
In this embodiment, as shown in fig. 3, the method further includes the steps of: and etching a
peripheral step115b in the light-emitting epitaxial structure by using an Inductively Coupled Plasma (ICP) etching process, wherein the
peripheral step115b is annular and penetrates through the P-
type semiconductor layer107, the light-emitting
layer105 and the N-
type semiconductor layer104, and a part of the surface of the
substrate101 is exposed.
As shown in fig. 4, step 3) is then performed to form a current spreading
layer108 on the P-
type semiconductor layer107.
For example, the current spreading
layer108 may be formed on the P-
type semiconductor layer107 by sputtering, and the current spreading
layer108 may be a transparent conductive layer made of, but not limited to, Indium Tin Oxide (ITO), and the thickness of the transparent conductive layer is in a range of 10 to 100 nm, for example, 30 nm. The current spreading
layer108 can effectively improve the uniformity of the injected current and improve the utilization efficiency of the current.
As shown in fig. 5 to 6, step 4) is performed to form an N-
type bottom electrode109 and a P-
type bottom electrode110 on the
electrode step115a and the current spreading
layer108, respectively.
Specifically, the N-
type bottom electrode109 may be fabricated on the exposed N-
type semiconductor layer104 of the
electrode step115a by thermal evaporation or electron beam evaporation, and has a thickness of 1.4 μm and a composition of Cr/Al/Pt/Cr/Pt/Au/Ti stack; the P-
type bottom electrode110 is then formed on the current spreading
layer108 by thermal evaporation or electron beam evaporation, and has a thickness of about 0.3 μm, and may be a Cr/Al/Ti/Pt/Au/Ti stack. Finally, the top surfaces of the N-
type bottom electrode109 and the P-
type bottom electrode110 are flush by adjusting the thickness, so that the subsequent etching for forming the first through hole and the second through
hole112b can be stopped on the same plane at the same time, thereby greatly reducing the etching difficulty of the first through hole and the second through
hole112b and saving the process cost.
As shown in fig. 7, step 5) is then performed to form a
reflective layer111 on the
electrode step115a and the front and side surfaces of the light emitting epitaxial structure.
Specifically, the
reflective layer111 may be formed on the front surface and the side surface of the light emitting epitaxial structure and the
electrode step115a by, for example, electron beam evaporation, and the reflective layer may be a bragg reflective layer, and the bragg
reflective layer111 may be formed by a plurality of SiO layers2/Ti3O5And stacking the materials. In this embodiment, a thin silicon dioxide layer may be deposited on the bottom surface of the
bragg reflector111 by PECVD (plasma enhanced chemical vapor deposition), for example, to provide better insulating property and improve adhesion of the
bragg reflector111.
In the present embodiment, the
reflective layer111 covers the side surface of the light emitting epitaxial structure by the
peripheral step115 b.
As shown in fig. 8, step 6) is then performed to form the second via 112b and the first via 112a in the
reflective layer111, wherein the second via 112b exposes the N-
type bottom electrode109, and the first via 112a exposes the P-
type bottom electrode110.
Specifically, the second through
hole112b and the first through
hole112a may be formed in the
reflective layer111 by using an inductively coupled plasma etching (ICP) process, and since the top surfaces of the second through
hole112b and the first through
hole112a are flush, the inductively coupled plasma etching (ICP) process may be stopped at the top surfaces of the second through
hole112b and the first through
hole112a at the same time, thereby greatly reducing the process difficulty.
As shown in fig. 9, step 7) is then performed to fabricate the N-type
external electrode114 and the P-type
external electrode113 based on the second via 112b and the first via 112 a.
Specifically, the N-type
external electrode114 and the P-type
external electrode113 are both divided into two parts, including a transition part and an external part. The outer part is layered Sn/In/Au, the thicknesses of all layers are respectively 1.3 micrometers, 0.4 micrometers, 0.1 micrometers or 0.05 micrometers, wherein the outer Sn layer and the In layer are prepared through a thermal evaporation method, and the Au layer is prepared through an electron beam evaporation method. The transition part can be formed by combining Cr, Al, Cu, Ti and Pt multilayer metals.
In this embodiment, the N-type
external electrode114 is flush with the top surface of the P-type
external electrode113, which can facilitate the package connection of the LED chip and other circuits.
As shown in fig. 10, step 8) is then performed to perform backside thinning on the
substrate101.
Specifically, step 8) includes: the front side of the LED chip is bonded to the
temporary substrate116, alternatively, the
temporary substrate116 may be one of a quartz flat sheet, a sapphire flat sheet or a silicon wafer, and the front side of the LED chip may be bonded to the
temporary substrate116 by using a temporary bonding adhesive, and the composition of the temporary bonding adhesive includes acrylic acid. The
substrate101 may then be back-thinned using a grinder-polisher station to a thickness of between 50-150 microns for the
substrate101.
As shown in fig. 11 to 13, step 9) is performed next, in which a light-limiting
layer115 is formed on the back surface of the
substrate101 by thermal evaporation or electron beam evaporation, and a light-
exit window117 is formed in the light-limiting
layer115. Thereafter, the
temporary substrate116 is removed, and dicing and breaking are performed to obtain individual LED chips.
The light-limiting
layer115 is an opaque material, and may be a metal layer, for example, the material of the metal layer includes one or more than two stacked layers of chromium, silver, gold, and copper. As shown in fig. 12, the shape of the
light exit window117 includes one of a rectangle, a circle and an ellipse. Of course, the light-limiting
layer115 may also be other opaque materials, and is not limited to the examples listed herein, and the shape of the light-exiting
window117 may also be a rounded rectangle or any other desired shape, and is not limited to the examples listed herein. The light-limiting
layer115 can reduce the light-emitting angle of the LED chip, and greatly reduce the color cast and color crosstalk between pixels of an LED display screen made of the LED chip at a large deflection angle viewing angle.
As described above, the LED chip and the manufacturing method thereof of the present invention have the following advantages:
according to the LED chip, the light limiting layer is formed on the light emitting surface of the LED chip to limit the light emitting angle of the LED chip, and meanwhile, the Bragg reflecting layer covers the side wall of the LED chip, so that crosstalk between light on the side surface of the LED chip can be effectively avoided. The invention can effectively reduce the light-emitting angle of the LED chip, and greatly reduce the problems of color cast and color crosstalk among pixels of an LED display screen made of the LED chip under a large deflection angle viewing angle.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (20)
1.一种LED芯片，其特征在于，包括：1. an LED chip, is characterized in that, comprises: 衬底；substrate; 限光层，位于所述衬底背面，所述限光层具有出光窗口；a light-limiting layer, located on the back of the substrate, and the light-limiting layer has a light exit window; 发光外延结构，位于所述衬底正面上，至少包括N型半导体层、发光层及P型半导体层，所述发光外延结构具有贯穿至所述N型半导体层表面的电极台阶；a light-emitting epitaxial structure, located on the front surface of the substrate, at least comprising an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and the light-emitting epitaxial structure has electrode steps extending through to the surface of the N-type semiconductor layer; 电流扩展层，位于所述P型半导体层上；a current spreading layer, located on the P-type semiconductor layer; 反射层，覆盖于所述电极台阶以及所述发光外延结构的正面与侧面；a reflective layer covering the electrode steps and the front and side surfaces of the light-emitting epitaxial structure; N电极，穿过所述电极台阶处的所述反射层与所述N型半导体层接触；N electrode, contacting the N-type semiconductor layer through the reflective layer at the electrode step; P电极，穿过所述反射层与所述电流扩展层接触。The P electrode is in contact with the current spreading layer through the reflective layer. 2.根据权利要求1所述的LED芯片，其特征在于：所述LED芯片包括Mini LED芯片。2 . The LED chip according to claim 1 , wherein the LED chip comprises a Mini LED chip. 3 . 3.根据权利要求1所述的LED芯片，其特征在于：所述衬底的材料包括蓝宝石、碳化硅及硅中一种。3 . The LED chip according to claim 1 , wherein the material of the substrate comprises one of sapphire, silicon carbide and silicon. 4 . 4.根据权利要求1所述的LED芯片，其特征在于：所述发光外延结构还包括缓冲层、本征半导体层以及电子阻挡层，所述电子阻挡层位于所述发光层及P型半导体层之间，所述缓冲层包括氮化铝缓冲层及氮化镓缓冲层中的一种，所述本征半导体层包括非掺杂氮化镓层。4 . The LED chip according to claim 1 , wherein the light-emitting epitaxial structure further comprises a buffer layer, an intrinsic semiconductor layer and an electron blocking layer, and the electron blocking layer is located on the light-emitting layer and the P-type semiconductor layer. 5 . Meanwhile, the buffer layer includes one of an aluminum nitride buffer layer and a gallium nitride buffer layer, and the intrinsic semiconductor layer includes an undoped gallium nitride layer. 5.根据权利要求1所述的LED芯片，其特征在于：所述N型半导体层包括N型氮化镓层，所述P型半导体层包括P型氮化镓层，所述发光层包括量子阱超晶格层。5 . The LED chip according to claim 1 , wherein the N-type semiconductor layer comprises an N-type gallium nitride layer, the P-type semiconductor layer comprises a P-type gallium nitride layer, and the light-emitting layer comprises a quantum Well superlattice layer. 6.根据权利要求1所述的LED芯片，其特征在于：所述N电极包括N型底部电极及N型外部电极，所述N型底部电极位于所述电极台阶处的所述N型半导体层表面，所述N型外部电极穿过所述反射层与所述N型底部电极连接；所述P电极包括P型底部电极及P型外部电极，所述P型底部电极位于所述电流扩展层表面，所述P型外部电极穿过所述反射层与所述P型底部电极连接。6 . The LED chip according to claim 1 , wherein the N-electrode comprises an N-type bottom electrode and an N-type outer electrode, and the N-type bottom electrode is located on the N-type semiconductor layer at the electrode step. 7 . On the surface, the N-type external electrode is connected to the N-type bottom electrode through the reflective layer; the P-electrode includes a P-type bottom electrode and a P-type external electrode, and the P-type bottom electrode is located in the current spreading layer On the surface, the P-type external electrode is connected to the P-type bottom electrode through the reflective layer. 7.根据权利要求6所述的LED芯片，其特征在于：所述N型底部电极与所述P型底部电极的顶面齐平，所述N型外部电极与所述P型外部电极的顶面齐平。7 . The LED chip of claim 6 , wherein the N-type bottom electrode is flush with the top surface of the P-type bottom electrode, and the N-type outer electrode is flush with the top of the P-type outer electrode. 8 . face flush. 8.根据权利要求1所述的LED芯片，其特征在于：所述LED芯片还包括外围台阶，所述外围台阶呈环状且贯穿所述P型半导体层、所述发光层及所述N型半导体层，并暴露出所述衬底的部分表面，所述反射层覆盖于所述电极台阶以及所述发光外延结构的正面，并藉由所述外围台阶覆盖于所述发光外延结构的侧面。8 . The LED chip according to claim 1 , wherein the LED chip further comprises a peripheral step, and the peripheral step is annular and penetrates the P-type semiconductor layer, the light-emitting layer and the N-type semiconductor layer. 9 . The semiconductor layer exposes a part of the surface of the substrate, the reflective layer covers the electrode steps and the front surface of the light-emitting epitaxial structure, and covers the side surface of the light-emitting epitaxial structure through the peripheral steps. 9.根据权利要求1所述的LED芯片，其特征在于：所述限光层包括金属层，所述金属层的材质包括铬、银、金及铜中的一种或两种以上的叠层。9 . The LED chip of claim 1 , wherein the light-limiting layer comprises a metal layer, and the material of the metal layer comprises one or more layers of chromium, silver, gold and copper. 10 . . 10.根据权利要求1所述的LED芯片，其特征在于：所述出光窗口的形状包括矩形、圆形及椭圆形中的一种。10 . The LED chip according to claim 1 , wherein the shape of the light exit window comprises one of a rectangle, a circle and an ellipse. 11 . 11.一种LED显示屏，其特征在于，所述LED显示屏包含如权利要求1～10任意一项所述的LED芯片所制成的LED像素阵列。11 . An LED display screen, characterized in that, the LED display screen comprises an LED pixel array made of the LED chip according to any one of claims 1 to 10 . 12.一种LED芯片的制作方法，其特征在于，包括步骤：12. A method for making an LED chip, comprising the steps of: 1)提供衬底，在所述衬底上形成发光外延结构，所述发光外延结构至少包括N型半导体层、发光层及P型半导体层；1) providing a substrate, and forming a light-emitting epitaxial structure on the substrate, the light-emitting epitaxial structure at least comprising an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer; 2)在所述发光外延结构中刻蚀出贯穿至所述N型半导体层的电极台阶；2) Etching electrode steps extending through the N-type semiconductor layer in the light-emitting epitaxial structure; 3)于所述P型半导体层上形成电流扩展层；3) forming a current spreading layer on the P-type semiconductor layer; 4)于所述电极台阶上及所述电流扩展层上分别形成N型底部电极及P型底部电极；4) respectively forming an N-type bottom electrode and a P-type bottom electrode on the electrode steps and the current spreading layer; 5)于所述电极台阶以及所述发光外延结构的正面与侧面形成反射层；5) forming a reflective layer on the front and side surfaces of the electrode steps and the light-emitting epitaxial structure; 6)于所述反射层中形成所述第二通孔及所述第一通孔，所述第二通孔显露所述N型底部电极，所述第一通孔显露所述P型底部电极；6) Form the second through hole and the first through hole in the reflective layer, the second through hole exposes the N-type bottom electrode, and the first through hole exposes the P-type bottom electrode ; 7)基于所述第二通孔及所述第一通孔制作N型外部电极及P型外部电极；7) making N-type external electrodes and P-type external electrodes based on the second through holes and the first through holes; 8)对所述衬底进行背面减薄；8) thinning the back of the substrate; 9)于所述衬底背面制作限光层，并在所述限光层中形成出光窗口。9) A light-limiting layer is fabricated on the backside of the substrate, and a light-emitting window is formed in the light-limiting layer. 13.根据权利要求12所述的LED芯片的制作方法，其特征在于：步骤2)～步骤3)之间还包括步骤：于所述发光外延结构中刻蚀出外围台阶，所述外围台阶呈环状且贯穿所述P型半导体层、所述发光层及所述N型半导体层，并暴露出所述衬底的部分表面，步骤5)所述反射层藉由所述外围台阶覆盖于所述发光外延结构的侧面。13 . The manufacturing method of an LED chip according to claim 12 , further comprising a step between steps 2) and 3): etching a peripheral step in the light-emitting epitaxial structure, and the peripheral step is 13 . Ring-shaped and penetrates through the P-type semiconductor layer, the light-emitting layer and the N-type semiconductor layer, and exposes part of the surface of the substrate, step 5) The reflective layer is covered by the peripheral step on the the side surface of the light-emitting epitaxial structure. 14.根据权利要求12所述的LED芯片的制作方法，其特征在于：所述发光外延结构还包括缓冲层、本征半导体层以及电子阻挡层，所述电子阻挡层位于所述发光层及P型半导体层之间，所述缓冲层包括氮化铝缓冲层及氮化镓缓冲层中的一种，所述本征半导体层包括非掺杂氮化镓层。14. The manufacturing method of an LED chip according to claim 12, wherein the light-emitting epitaxial structure further comprises a buffer layer, an intrinsic semiconductor layer and an electron blocking layer, and the electron blocking layer is located on the light-emitting layer and the P Between the type semiconductor layers, the buffer layer includes one of an aluminum nitride buffer layer and a gallium nitride buffer layer, and the intrinsic semiconductor layer includes an undoped gallium nitride layer. 15.根据权利要求12所述的LED芯片的制作方法，其特征在于：所述N型半导体层包括N型氮化镓层，所述P型半导体层包括P型氮化镓层，所述发光层包括量子阱超晶格层。15. The manufacturing method of an LED chip according to claim 12, wherein the N-type semiconductor layer comprises an N-type gallium nitride layer, the P-type semiconductor layer comprises a P-type gallium nitride layer, and the light-emitting The layers include quantum well superlattice layers. 16.根据权利要求12所述的LED芯片的制作方法，其特征在于：所述N型底部电极与所述P型底部电极的顶面齐平，所述N型外部电极与所述P型外部电极的顶面齐平。16 . The manufacturing method of an LED chip according to claim 12 , wherein the N-type bottom electrode is flush with the top surface of the P-type bottom electrode, and the N-type outer electrode is flush with the P-type outer electrode. 17 . The top surface of the electrode is flush. 17.根据权利要求12所述的LED芯片的制作方法，其特征在于：所述限光层包括金属层，所述金属层的材质包括铬、银、金及铜中的一种或两种以上的叠层。17 . The method for manufacturing an LED chip according to claim 12 , wherein the light limiting layer comprises a metal layer, and the material of the metal layer comprises one or more of chromium, silver, gold and copper. 18 . of the stack. 18.根据权利要求12所述的LED芯片的制作方法，其特征在于：所述出光窗口的形状包括矩形、圆形及椭圆形中的一种。18 . The manufacturing method of an LED chip according to claim 12 , wherein the shape of the light exit window comprises one of a rectangle, a circle and an ellipse. 19 . 19.根据权利要求12所述的LED芯片的制作方法，其特征在于：步骤8)包括：将LED芯片正面粘结到临时基板上，然后采用研磨抛光机台对衬底进行背面减薄；步骤9)之后还包括移除所述临时基板的步骤。19. The method for manufacturing an LED chip according to claim 12, wherein step 8) comprises: bonding the front side of the LED chip to a temporary substrate, and then using a grinding and polishing machine to thin the back side of the substrate; step 9) After that, the step of removing the temporary substrate is also included. 20.根据权利要求19所述的LED芯片的制作方法，其特征在于：采用临时键合胶将LED芯片正面粘结到临时基板上，所述临时键合胶的成分包括丙烯酸。20 . The manufacturing method of an LED chip according to claim 19 , wherein the front side of the LED chip is bonded to the temporary substrate by using a temporary bonding glue, and the composition of the temporary bonding glue comprises acrylic acid. 21 .
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| CN117253953B (en) * | 2023-11-16 | 2024-04-05 | 南昌凯捷半导体科技有限公司 | A flip-chip red light Mini-LED chip and its manufacturing method |
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