CN1300934C - Energy gap reference circuit - Google Patents
- ️Wed Feb 14 2007
CN1300934C - Energy gap reference circuit - Google Patents
Energy gap reference circuit Download PDFInfo
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- CN1300934C CN1300934C CNB031424260A CN03142426A CN1300934C CN 1300934 C CN1300934 C CN 1300934C CN B031424260 A CNB031424260 A CN B031424260A CN 03142426 A CN03142426 A CN 03142426A CN 1300934 C CN1300934 C CN 1300934C Authority
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- 230000005669 field effect Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
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- 238000013507 mapping Methods 0.000 description 1
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Abstract
The invention relates to a bandgap reference circuit, which not only can generate a bandgap reference voltage which is not easy to change along with temperature, but also can eliminate the poor bandgap reference voltage caused by the channel modulation effect of a transistor and the leakage current effect at high temperature in the existing bandgap reference circuit by the circuit configuration mode.
Description
(1)技术领域(1) Technical field
本发明有关一种能隙参考电路，尤指一种能隙参考电压较不易随电压源及温度而变化的能隙参考电路。The invention relates to an energy gap reference circuit, in particular to an energy gap reference circuit whose energy gap reference voltage is less likely to change with voltage source and temperature.
(2)背景技术(2) Background technology
现有的能隙参考电路如图1所示，其是由三个P型金属氧化物半导体场效应晶体管(MOSFET)111、112及113，二个N型金属氧化物半导体场效应晶体管121及122，电阻131及132，以及pnp型双载子接面晶体管(BJT)141、142及143所共同耦接而成。其中P型金属氧化物半导体场效应晶体管111、112及113与N型金属氧化物半导体场效应晶体管121及122的通道区(Channel)宽长比(AspectRatio)皆相同，pnp型双载子接面晶体管141及142的pn接面面积亦为相同，而pnp型双载子接面晶体管143的pn接面面积为pnp型双载子接面晶体管141及142的整数倍、且至少为2倍，故pnp型双载子接面晶体管143亦可以由至少两个pn接面面积等同于pnp型双载子接面晶体管141及142的pnp型双载子接面晶体管，以同极端相耦接(射极端连接射极端、基极端连接基极端以及集极端连接集极端)的方式形成。Existing energy gap reference circuit as shown in Figure 1, it is by three P-type metal oxide semiconductor field effect transistors (MOSFET) 111,112 and 113, two N type metal oxide semiconductor field effect transistors 121 and 122 , resistors 131 and 132 , and pnp type BJTs (BJT) 141 , 142 and 143 are jointly coupled. Wherein the P-type MOSFETs 111, 112 and 113 and the N-type MOSFETs 121 and 122 have the same channel area (Channel) aspect ratio (AspectRatio), and the pnp type bicarrier junction The pn junction areas of the transistors 141 and 142 are also the same, and the pn junction area of the pnp type bicarrier junction transistor 143 is an integer multiple of the pnp type bicarrier junction transistors 141 and 142, and is at least twice, Therefore, the pnp-type BJT 143 can also be composed of at least two pnp-type BJTs whose pn-junction areas are equal to those of the pnp-type BJTs 141 and 142, coupled with the same terminal ( The emitter terminal is connected to the emitter terminal, the base terminal is connected to the base terminal, and the collector terminal is connected to the collector terminal).
由于金属氧化物半导体场效应晶体管112、113、121及122是以电流镜的方式耦接，因此电流i111、i112、i113、i121及i122皆为相同，但双载子接面晶体管143的pn接面面积大于双载子接面晶体管141及142，因此双载子接面晶体管141及142射极端与基极端之间的电压差虽彼此相等，但却皆大于双载子接面晶体管143的射极端与基极端之间的电压差，这个电压差(令其表为ΔVBE143)即成为电阻132两端的电压差，并与电流i122具有Since the Mosfets 112, 113, 121 and 122 are coupled in the form of current mirrors, the currents i 111 , i 112 , i 113 , i 121 and i 122 are all the same, but the bicarrier junction The pn junction area of the transistor 143 is larger than that of the bipolar junction transistors 141 and 142, so although the voltage differences between the emitter and base terminals of the bipolar junction transistors 141 and 142 are equal to each other, they are both larger than the bipolar junction transistors 141 and 142. The voltage difference between the emitter terminal and the base terminal of the surface transistor 143, this voltage difference (let it be expressed as ΔV BE143 ) becomes the voltage difference between the two ends of the resistor 132, and has the same relationship with the current i 122
i122＝ΔVBE143/R132 (1)的关系(令电阻132的电阻值表为R132)。The relationship of i 122 =ΔV BE143 /R 132 (1) (let the resistance value of the resistor 132 be R 132 ).
由图1可看出，所要求的能隙参考电压Vref与电阻131(令其电阻值表为R131)及双载子接面晶体管141射极端与基极端间的电压差VBE141具有It can be seen from FIG. 1 that the required energy gap reference voltage V ref has a relationship with the voltage difference V BE141 between the emitter terminal and the base terminal of the resistor 131 (let its resistance value be R 131 ) and the bipolar junction transistor 141.
Vref＝VB141+i111R131 (2)V ref = V B141 + i 111 R 131 (2)
的关系，由于i111与i122相等，因此若将(1)式代入(2)式，可将(2)式表为Since i 111 is equal to i 122 , if formula (1) is substituted into formula (2), formula (2) can be expressed as
Vref＝VBE141+ΔVBE143(R131/R132) (3)V ref =V BE141 +ΔV BE143 (R 131 /R 132 ) (3)
由于VBE141与ΔVBE143皆具有随温度的增加而变化的特性，其变化率分别约为-2mV/℃及+0.2mV/℃，因此经由适当的设计R131与R132的阻值，且令其比值成为10，则可得到一不随温度的增加而变化的能隙参考电压Vref。Since both V BE141 and ΔV BE143 have the characteristics of changing with the increase of temperature, the rate of change is about -2mV/°C and +0.2mV/°C respectively, so by properly designing the resistance values of R 131 and R 132 , and making When the ratio becomes 10, a bandgap reference voltage V ref that does not change with the increase of temperature can be obtained.
然而，上述的能隙参考电路却有如下的两个问题：However, the above bandgap reference circuit has the following two problems:
(1)晶体管的通道调变效应(Channel Length Modulation)造成Vref会随VDD而变：(1) The channel modulation effect (Channel Length Modulation) of the transistor causes V ref to change with V DD :
由图1中可看出，金属氧化物半导体场效应晶体管122漏极端的电压是由金属氧化物半导体场效应晶体管113源极端与栅极端的电压差所决定，然而，金属氧化物半导体场效应晶体管121漏极端的电压却是由本身源极端与栅极端的电压差以及双载子接面晶体管142射极端与基极端间的电压差所共同决定，这个差异对于金属氧化物半导体场效应晶体管112及113所构成的电流镜来说是一个电流映射不对称的因素，也造成了Vref会随VDD而变化的缺憾。It can be seen from FIG. 1 that the voltage at the drain terminal of the MOSFET 122 is determined by the voltage difference between the source terminal and the gate terminal of the MOSFET 113. However, the MOSFET The voltage at the drain terminal of 121 is determined by the voltage difference between the source terminal and the gate terminal itself and the voltage difference between the emitter terminal and the base terminal of the bicarrier junction transistor 142. This difference is for the metal oxide semiconductor field effect transistor 112 and For the current mirror formed by 113, it is a factor of current mapping asymmetry, which also causes the defect that V ref will vary with V DD .
(2)高温时晶体管的漏流效应(Leakage Effect)造成Vref产生飘移：(2) The leakage effect of the transistor at high temperature (Leakage Effect) causes V ref to drift:
在图1中，金属氧化物半导体场效应晶体管121及122的漏极端对于基体(Substrate)来说，分别相当于一反相操作的二极管pn接面，此一pn接面因为漏流效应的关系会有一漏电流(Leakage Cueernt)产生，此一漏电流在低温时效应极低，因此能隙参考电压Vref尚可表现如图2(a)所示的较为理想的状态，然后在高温时，漏电流会造成i121及i122的增加，藉由电流镜映射到电阻131的后果则是i111的增加，造成能隙参考电压Vref产生飘移现象，如图2(b)所示。In FIG. 1, the drain terminals of MOSFETs 121 and 122 are respectively equivalent to a pn junction of diodes operating in reverse to the substrate. This pn junction is due to the leakage current effect. There will be a leakage current (Leakage Cueernt), the effect of this leakage current is extremely low at low temperature, so the bandgap reference voltage V ref can still show a relatively ideal state as shown in Figure 2(a), and then at high temperature, Leakage current will cause the increase of i 121 and i 122 , and the consequence of being mapped to the resistor 131 by the current mirror is the increase of i 111 , causing the bandgap reference voltage V ref to drift, as shown in FIG. 2( b ).
(3)发明内容(3) Contents of the invention
本发明的主要目的为设计一种能隙参考电路，不仅可以产生不易随温度而变化的能隙参考电压，同时以增加晶体管元件及变更晶体管的电压操作点的方式，消除现有的能隙参考电路中因为晶体管的通道调变效应与高温时的漏流效应，所造成的能隙参考电压不佳的情形。The main purpose of the present invention is to design an energy gap reference circuit, which can not only generate an energy gap reference voltage that is not easy to change with temperature, but also eliminate the existing energy gap reference voltage by adding transistor elements and changing the voltage operating point of the transistor. In the circuit, due to the channel modulation effect of the transistor and the leakage current effect at high temperature, the energy gap reference voltage is not good.
根据本发明的构想，提出一种能隙参考电路，其包括：一第一晶体管，其一第一端连接于一第一电压；一第一电阻，其一端连接于该第一晶体管的一第二端；一第二晶体管，其一第一端连接于该第一电阻的另一端，其一第二端及控制端共同连接于一第二电压；一第三晶体管，其一第一端连接于该第一电压，其控制端连接于该第一晶体管的控制端；一第四晶体管，其一第一端连接于该第一电压，其控制端连接于该第三晶体管的控制端；一第五晶体管，其一第一端连接于该第三晶体管的一第二端，其控制端连接于该第四晶体管的一第二端；一第六晶体管，其一第一端及控制端共同连接于该第五晶体管的控制端；一第二电阻，其一端连接于该第六晶体管的一第二端；一第七晶体管，其一第一端连接于该第五晶体管的一第二端，其一第二端及控制端共同连接于该第二电压；一第八晶体管，其一第一端连接于该第二电阻的另一端，其一第二端及控制端共同连接于该第二电压；一第九晶体管，其一第一端连接于该第一电压，其一第二端及控制端共同连接于该第四晶体管的控制端；一第十晶体管，其一第一端连接于该第九晶体管的该第二端，其控制端连接于该第五晶体管的该第一端；一第十一晶体管，其一第一端连接于该第十晶体管的一第二端，其一第二端及控制端共同连接于该第二电压；以及一第十二晶体管，其一第一端及一第二端共同连接于该第一晶体管的该第二端，其控制端连接于该第二电压；利用该第一、第三、第四、第五及第六晶体管的耦接，使得流经该第二电阻的电流映射至该第一电阻，并在该第一电阻与该第一晶体管的该第二端连接处输出一能隙参考电压。According to the idea of the present invention, a bandgap reference circuit is proposed, which includes: a first transistor, a first terminal of which is connected to a first voltage; a first resistor, one terminal of which is connected to a first transistor of the first transistor Two terminals; a second transistor, a first terminal of which is connected to the other end of the first resistor, a second terminal and a control terminal of which are commonly connected to a second voltage; a third transistor, a first terminal of which is connected At the first voltage, its control terminal is connected to the control terminal of the first transistor; a fourth transistor, its first terminal is connected to the first voltage, and its control terminal is connected to the control terminal of the third transistor; A fifth transistor, a first end of which is connected to a second end of the third transistor, and a control end of which is connected to a second end of the fourth transistor; a sixth transistor, a first end and a control end of which are in common connected to the control terminal of the fifth transistor; a second resistor, one terminal of which is connected to a second terminal of the sixth transistor; a seventh transistor, a first terminal of which is connected to a second terminal of the fifth transistor , a second end and a control end of which are commonly connected to the second voltage; an eighth transistor, a first end of which is connected to the other end of the second resistor, and a second end and a control end thereof are commonly connected to the first Two voltages; a ninth transistor, a first end of which is connected to the first voltage, a second end and a control end of which are commonly connected to the control end of the fourth transistor; a tenth transistor, a first end of which is connected At the second terminal of the ninth transistor, its control terminal is connected to the first terminal of the fifth transistor; a first terminal of an eleventh transistor is connected to a second terminal of the tenth transistor, and its A second terminal and a control terminal are commonly connected to the second voltage; and a twelfth transistor, a first terminal and a second terminal are commonly connected to the second terminal of the first transistor, and a control terminal is connected to The second voltage; using the coupling of the first, third, fourth, fifth and sixth transistors, the current flowing through the second resistor is mapped to the first resistor, and between the first resistor and the A bandgap reference voltage is output from the connection of the second terminal of the first transistor.
根据上述构想，其中该第一电压大于该第二电压。According to the above idea, wherein the first voltage is greater than the second voltage.
根据上述构想所述的能隙参考电路还具有一补偿电容，其一端连接于该第十晶体管的控制端，其另一端连接于该第二电压。According to the above idea, the bandgap reference circuit further has a compensation capacitor, one end of which is connected to the control end of the tenth transistor, and the other end of which is connected to the second voltage.
根据上述构想所述的能隙参考电路，其中该第一、第三、第四及第九晶体管为相同的P型金属氧化物半导体场效应晶体管(MOSFET)，该第一端皆为源极端，该第二端皆为漏极端，控制端皆为栅极端。According to the bandgap reference circuit described above, the first, third, fourth and ninth transistors are the same P-type metal oxide semiconductor field effect transistor (MOSFET), and the first terminals are all source terminals, The second terminals are all drain terminals, and the control terminals are all gate terminals.
根据上述构想，其中该第五、第六、第十及第十二晶体管为相同的N型金属氧化物半导体场效应晶体管(MOSFET)，该第一端皆为漏极端，该第二端皆为源极端，控制端皆为栅极端。According to the above concept, wherein the fifth, sixth, tenth and twelfth transistors are the same N-type metal oxide semiconductor field effect transistor (MOSFET), the first terminals are all drain terminals, and the second terminals are all The source terminal and the control terminal are both gate terminals.
根据上述构想，其中该第二、第七及第十一晶体管为相同的pnp型双载子接面晶体管(BJT)，该第一端皆为射极端，该第二端皆为集极端，控制端皆为基极端。According to the above idea, wherein the second, seventh and eleventh transistors are the same pnp bipolar junction transistor (BJT), the first terminals are all emitter terminals, and the second terminals are all collector terminals, controlling Both ends are base ends.
根据上述构想，其中该第八晶体管为pnp型双载子接面晶体管，该第一端为射极端，该第二端为集极端，控制端皆为基极端。According to the above idea, the eighth transistor is a pnp bipolar junction transistor, the first terminal is the emitter terminal, the second terminal is the collector terminal, and the control terminals are all base terminals.
根据上述构想，其中该第八晶体管的pn接面面积为该第二、第七及第十一晶体管的pn接面面积的整数倍，且至少为2倍。According to the above concept, the pn junction area of the eighth transistor is an integer multiple of the pn junction areas of the second, seventh and eleventh transistors, and is at least twice.
根据上述构想，其中该第八晶体管是由至少2个与该第二、第七及第十一晶体管相同的pnp型双载子接面晶体管耦接而成。According to the above idea, the eighth transistor is formed by coupling at least two pnp bijunction transistors which are the same as the second, seventh and eleventh transistors.
本发明通过下列附图及详细说明而可获得一更深入的了解：A deeper understanding of the present invention can be obtained through the following drawings and detailed description:
(4)附图说明(4) Description of drawings
图1是现有的能隙参考电路的电路示意图；1 is a schematic circuit diagram of an existing energy gap reference circuit;
图2(a)是低温时的能隙参考电压对温度变化的关系图；Fig. 2 (a) is the relationship diagram of energy gap reference voltage to temperature change at low temperature;
图2(b)是高温时的能隙参考电压对温度变化的关系图；Fig. 2 (b) is the relationship diagram of the energy gap reference voltage to the temperature change at high temperature;
图3是本发明的能隙参考电路的电路示意图。FIG. 3 is a schematic circuit diagram of the energy gap reference circuit of the present invention.
(5)具体实施方式(5) specific implementation
本发明所述的能隙参考电路一较佳实施样态如图3所示，其是由相同的P型金属氧化物半导体场效应晶体管311、312、313及314，相同的N型金属氧化物半导体场效应晶体管321、322、323及324，相同的pnp型双载子接面晶体管331、332及334，电阻34及35，以及电容36互相耦接而成，而pnp型双载子接面晶体管333的pn接面面积为pnp型双载子接面晶体管331、332及334的整数倍、且至少为2倍。其中P型金属氧化物半导体场效应晶体管311、312、313及314的源极端皆连接至高电压VDD，且P型金属氧化物半导体场效应晶体管311的栅极端、P型金属氧化物半导体场效应晶体管312的栅极端、P型金属氧化物半导体场效应晶体管313的栅极端以及P型金属氧化物半导体场效应晶体管314的栅极端与漏极端亦皆互相连接在一起，N型金属氧化物半导体场效应晶体管321的源极端与漏极端连接至P型金属氧化物半导体场效应晶体管311的漏极端、栅极端则连接至接地端，电阻34的一端连接至P型金属氧化物半导体场效应晶体管311的漏极端、另一端则连接至pnp型双载子接面晶体管331的射极端，而pnp型双载子接面晶体管331的基极端与集极端共同连接至接地端。另外，P型金属氧化物半导体场效应晶体管312的漏极端连接至N型金属氧化物半导体场效应晶体管322的漏极端，P型金属氧化物半导体场效应晶体管313的漏极端与N型金属氧化物半导体场效应晶体管323的栅极端及漏极端互相连接在一起，而N型金属氧化物半导体场效应晶体管322的栅极端则与N型金属氧化物半导体场效应晶体管323的栅极端连接在一起，N型金属氧化物半导体场效应晶体管322的源极端则与pnp型双载子接面晶体管332的射极端连接在一起，而电阻35的一端连接至N型金属氧化物半导体场效应晶体管323的源极端后、另一端则与pnp型双载子接面晶体管333的射极端相互连接，而pnp型双载子接面晶体管332及333的基极端与集极端则共同连接至接地端。最后，N型金属氧化物半导体场效应晶体管324的漏极端连接至P型金属氧化物半导体场效应晶体管314的漏极端、栅极端连接至P型金属氧化物半导体场效应晶体管312的漏极端、源极端则与pnp型双载子接面晶体管334的射极端相互连接，而pnp型双载子接面晶体管334的基极端与集极端共同连接至接地端，至于补偿电容36则接在N型金属氧化物半导体场效应晶体管324的栅极端与接地端之间。A preferred implementation of the bandgap reference circuit according to the present invention is shown in Figure 3, which consists of the same P-type metal oxide semiconductor field effect transistors 311, 312, 313 and 314, and the same N-type metal oxide Semiconductor field effect transistors 321, 322, 323 and 324, the same pnp type bicarrier junction transistors 331, 332 and 334, resistors 34 and 35, and capacitor 36 are mutually coupled, and the pnp type bicarrier junction transistors The pn junction area of the transistor 333 is an integer multiple of the pnp type bicarrier junction transistors 331 , 332 and 334 , and is at least twice. The source terminals of the PMOSFETs 311, 312, 313 and 314 are all connected to the high voltage V DD , and the gate terminal of the PMOSFET 311, the PMOSFET The gate terminal of the transistor 312, the gate terminal of the PMOS field effect transistor 313, and the gate terminal and the drain terminal of the PMOS field effect transistor 314 are also connected to each other, and the NMOS field effect transistor The source terminal and the drain terminal of the effect transistor 321 are connected to the drain terminal of the PMOS field effect transistor 311, the gate terminal is connected to the ground terminal, and one end of the resistor 34 is connected to the PMOS field effect transistor 311. The drain terminal and the other terminal are connected to the emitter terminal of the pnp type BJT 331 , and the base terminal and the collector terminal of the pnp type BJT transistor 331 are both connected to the ground terminal. In addition, the drain terminal of the PMOSFET 312 is connected to the drain terminal of the NMOSFET 322, and the drain terminal of the PMOSFET 313 is connected to the drain terminal of the NMOSFET. The gate terminal and the drain terminal of the semiconductor field effect transistor 323 are connected together, and the gate terminal of the NMOS field effect transistor 322 is connected together with the gate terminal of the NMOS field effect transistor 323, N The source terminal of the NMOSFET 322 is connected to the emitter terminal of the pnp bicarrier junction transistor 332, and one end of the resistor 35 is connected to the source terminal of the NMOSFET 323. The rear end and the other end are connected to the emitter end of the pnp type BJT 333, and the base ends and collector ends of the pnp type BJT transistors 332 and 333 are connected to the ground end. Finally, the drain terminal of the NMOSFET 324 is connected to the drain terminal of the PMOSFET 314, the gate terminal is connected to the drain terminal of the PMOSFET 312, and the source The terminal is connected to the emitter terminal of the pnp type bipolar junction transistor 334, and the base terminal and the collector terminal of the pnp type bipolar junction transistor 334 are commonly connected to the ground terminal, and the compensation capacitor 36 is connected to the N-type metal Between the gate terminal of the oxide semiconductor field effect transistor 324 and the ground terminal.
首先，由于金属氧化物半导体场效应晶体管311、312、313、314、321、322、323及324是以电流镜的方式耦接，因此电流i311、i312、i313、i314、i322、i323及i324皆为相同，而双载子接面晶体管333的pn接面面积大于双载子接面晶体管331及332，因此双载子接面晶体管331及332射极端与基极端之间的电压差虽彼此相等，但却皆大于双载子接面晶体管333的射极端与基极端之间的电压差，这个电压差(令其表为ΔVBE333)即成为电阻35两端的电压差，并与电流i323具有Firstly, since the MOSFETs 311, 312, 313, 314, 321, 322, 323, and 324 are coupled in the form of current mirrors, the currents i 311 , i 312 , i 313 , i 314 , i 322 , i 323 and i 324 are all the same, and the pn junction area of the bipolar junction transistor 333 is larger than that of the bipolar junction transistors 331 and 332, so the distance between the emitter terminal and the base terminal of the bipolar junction transistor 331 and 332 Although the voltage differences between them are equal to each other, they are all larger than the voltage difference between the emitter terminal and the base terminal of the bicarrier junction transistor 333. This voltage difference (let it be expressed as ΔV BE333 ) becomes the voltage difference between the two ends of the resistor 35 , and with the current i323 having
i323＝ΔVBE333/R35 (4)的关系(令电阻35的电阻值表为R35)。The relationship of i 323 =ΔV BE333 /R 35 (4) (let the resistance value of the resistor 35 be R 35 ).
由图3可看出，所要求的能隙参考电压Vref与电阻34(令其电阻值表为R34)及双载子接面晶体管331射极端与基极端间的电压差VBE331具有It can be seen from FIG. 3 that the required bandgap reference voltage V ref has a relationship with the voltage difference V BE331 between the emitter terminal and the base terminal of the resistor 34 (let its resistance value be R 34 ) and the bipolar junction transistor 331.
Vref＝VBE331+i311R34 (5)的关系，由于i311与i323相等，因此若将(4)式代入(5)式，可将(5)式表为V ref =V BE331 +i 311 R 34 (5) relationship, since i 311 and i 323 are equal, if (4) formula is substituted into (5), formula (5) can be expressed as
Vref＝VBE331+ΔVBE333(R34/R35) (6)V ref =V BE331 +ΔV BE333 (R 34 /R 35 ) (6)
由于VBE331与ΔVBE333皆具有随温度的增加而变化的特性，其变化率分别约为-2mV/℃及+0.2mV/℃，因此经由适当的设计R34与R35的阻值，且令其比值成为10，则可得到一不随温度的增加而变化的能隙参考电压Vref。因此，由本发明所述的电路配置方式的能隙参考电路，与现有技术同样具有产生能隙参考电压的功效。Since both V BE331 and ΔV BE333 have the characteristics of changing with the increase of temperature, the rate of change is about -2mV/°C and +0.2mV/°C respectively, so by properly designing the resistance values of R 34 and R 35 , and making When the ratio becomes 10, a bandgap reference voltage V ref that does not change with the increase of temperature can be obtained. Therefore, the bandgap reference circuit configured by the circuit of the present invention has the same effect as the prior art to generate the bandgap reference voltage.
另外，由图3中可看出，金属氧化物半导体场效应晶体管323漏极端的电压是由金属氧化物半导体场效应晶体管322源极端与栅极端的电压差，以及双载子接面晶体管332射极端与基极端间的电压差的总和所决定。然后，由于金属氧化物半导体场效应晶体管324及双载子接面晶体管334的存在，使得金属氧化物半导体场效应晶体管322漏极端的电压是由金属氧化物半导体场效应晶体管324源极端与栅极端的电压差，以及双载子接面晶体管334射极端与基极端间的电压差的总和所决定；但因为i312、i314、i322及i324皆为相同，且金属氧化物半导体场效应晶体管322与324、以及双载子接面晶体管332与334彼此亦皆为相同的元件，因此金属氧化物半导体场效应晶体管324源极端与栅极端的电压差是与金属氧化物半导体场效应晶体管322源极端与栅极端的电压差相同，而双载子接面晶体管334射极端与基极端间的电压差是与双载子接面晶体管332射极端与基极端间的电压差相同，这样，金属氧化物半导体场效应晶体管322漏极端的电压亦可看成是由金属氧化物半导体场效应晶体管322源极端与栅极端的电压差，以及双载子接面晶体管332射极端与基极端间的电压差的总和所决定。因此，由本发明所述的电路配置方式的能隙参考电路，其中金属氧化物半导体场效应晶体管322漏极端的电压操作点以及金属氧化物半导体场效应晶体管323漏极端的电压操作点是完全相同的，所以能够消除现有能隙参考电路中，因为晶体管的通道调变效应而造成Vref会随VDD而变的不佳情形。In addition, it can be seen from FIG. 3 that the voltage at the drain terminal of the MOSFET 323 is determined by the voltage difference between the source terminal and the gate terminal of the MOSFET 322 and the voltage emitted by the BJT 332. It is determined by the sum of the voltage differences between the terminal and the base terminal. Then, due to the presence of the MOSFET 324 and the bicarrier junction transistor 334, the voltage at the drain terminal of the MOSFET 322 is controlled by the source terminal and the gate terminal of the MOSFET 324. The voltage difference, and the sum of the voltage difference between the emitter terminal and the base terminal of the bicarrier junction transistor 334 ; Transistors 322 and 324 and BJTs 332 and 334 are also the same elements, so the voltage difference between the source terminal and the gate terminal of Mosfet 324 is the same as that of Mosfet 322 The voltage difference between the source terminal and the gate terminal is the same, and the voltage difference between the emitter terminal and the base terminal of the bipolar junction transistor 334 is the same as the voltage difference between the emitter terminal and the base terminal of the bipolar junction transistor 332, so that the metal The voltage at the drain terminal of the oxide semiconductor field effect transistor 322 can also be regarded as the voltage difference between the source terminal and the gate terminal of the metal oxide semiconductor field effect transistor 322 and the voltage between the emitter terminal and the base terminal of the BJT 332 determined by the sum of the differences. Therefore, the bandgap reference circuit configured by the circuit of the present invention, wherein the voltage operating point of the drain terminal of the MOSFET 322 and the voltage operating point of the drain terminal of the MOSFET 323 are exactly the same , so it can eliminate the unfavorable situation that V ref changes with V DD due to the channel modulation effect of transistors in the existing bandgap reference circuit.
最后，由图3中可看出，金属氧化物半导体场效应晶体管322及323的漏极端对于基体来说，分别相当于一反相操作的二极管pn接面，此一pn接面因为漏流效应的关系会有一漏电流产生，此一漏电流在高温时会造成i322及i323的增加，藉由电流镜映射到电阻131的后果则是i311的增加；然而，本发明的设计却在Vref的输出端多接上了一个与金属氧化物半导体场效应晶体管322及323完全相同、源极端与漏极端共接、栅极端连接于接地端的金属氧化物半导体场效应晶体管321，因此在Vref的输出端亦会产生一股与金属氧化物半导体场效应晶体管322及323完全相同的漏电流，抵消在高温时i322及i323的增加。因此，由本发明所述的电路配置方式的能隙参考电路能够消除高温时因晶体管的漏流效应造成Vref产生飘移的现象产生。Finally, it can be seen from FIG. 3 that the drain terminals of MOSFETs 322 and 323 are respectively equivalent to a pn junction of diodes operating in reverse to the substrate. This pn junction is due to the leakage current effect There will be a leakage current, and this leakage current will cause the increase of i 322 and i 323 at high temperature, and the result of being mapped to the resistor 131 by the current mirror is the increase of i 311 ; however, the design of the present invention is in The output terminal of V ref is connected with a metal oxide semiconductor field effect transistor 321 which is exactly the same as the MOSFETs 322 and 323, the source terminal and the drain terminal are connected in common, and the gate terminal is connected to the ground terminal. Therefore, at V The output of ref will also generate a leakage current exactly the same as that of Mosfets 322 and 323, canceling the increase of i 322 and i 323 at high temperature. Therefore, the energy gap reference circuit with the circuit configuration of the present invention can eliminate the phenomenon of V ref drifting caused by the leakage current effect of the transistor at high temperature.
综上所述，可知本发明的能隙参考电路不但与现有技术同样具有产生能隙参考电压的功效，而且能够消弭现有技术中因为晶体管的通道调变效应以及高温时的漏流效应，所发生能隙参考电压不够稳定的缺点。In summary, it can be seen that the bandgap reference circuit of the present invention not only has the same function of generating bandgap reference voltage as the prior art, but also can eliminate the channel modulation effect of the transistor and the leakage current effect at high temperature in the prior art, The disadvantage that the generated energy gap reference voltage is not stable enough.
Claims (9)
1.一种能隙参考电路，其包括：1. A bandgap reference circuit, comprising: 一第一晶体管，其一第一端连接于一第一电压；a first transistor, a first terminal of which is connected to a first voltage; 一第一电阻，其一端连接于该第一晶体管的一第二端；a first resistor, one end of which is connected to a second end of the first transistor; 一第二晶体管，其一第一端连接于该第一电阻的另一端，其一第二端及控制端共同连接于一第二电压；A second transistor, a first end of which is connected to the other end of the first resistor, a second end and a control end of which are commonly connected to a second voltage; 一第三晶体管，其一第一端连接于该第一电压，其控制端连接于该第一晶体管的控制端；a third transistor, a first terminal of which is connected to the first voltage, and a control terminal of which is connected to the control terminal of the first transistor; 一第四晶体管，其一第一端连接于该第一电压，其控制端连接于该第三晶体管的控制端；a fourth transistor, a first terminal of which is connected to the first voltage, and a control terminal of which is connected to the control terminal of the third transistor; 一第五晶体管，其一第一端连接于该第三晶体管的一第二端，其控制端连接于该第四晶体管的一第二端；a fifth transistor, a first terminal of which is connected to a second terminal of the third transistor, and a control terminal of which is connected to a second terminal of the fourth transistor; 一第六晶体管，其一第一端及控制端共同连接于该第五晶体管的控制端；A sixth transistor, a first terminal and a control terminal of which are commonly connected to the control terminal of the fifth transistor; 一第二电阻，其一端连接于该第六晶体管的一第二端；a second resistor, one end of which is connected to a second end of the sixth transistor; 一第七晶体管，其一第一端连接于该第五晶体管的一第二端，其一第二端及控制端共同连接于该第二电压；a seventh transistor, a first terminal of which is connected to a second terminal of the fifth transistor, a second terminal and a control terminal of which are commonly connected to the second voltage; 一第八晶体管，其一第一端连接于该第二电阻的另一端，其一第二端及控制端共同连接于该第二电压；An eighth transistor, a first end of which is connected to the other end of the second resistor, a second end and a control end of which are commonly connected to the second voltage; 一第九晶体管，其一第一端连接于该第一电压，其一第二端及控制端共同连接于该第四晶体管的控制端；A ninth transistor, a first terminal of which is connected to the first voltage, a second terminal and a control terminal of which are commonly connected to the control terminal of the fourth transistor; 一第十晶体管，其一第一端连接于该第九晶体管的该第二端，其控制端连接于该第五晶体管的该第一端；a tenth transistor, a first terminal of which is connected to the second terminal of the ninth transistor, and a control terminal of which is connected to the first terminal of the fifth transistor; 一第十一晶体管，其一第一端连接于该第十晶体管的一第二端，其一第二端及控制端共同连接于该第二电压；以及an eleventh transistor, a first terminal of which is connected to a second terminal of the tenth transistor, a second terminal and a control terminal of which are commonly connected to the second voltage; and 一第十二晶体管，其一第一端及一第二端共同连接于该第一晶体管的该第二端，其控制端连接于该第二电压；a twelfth transistor, a first terminal and a second terminal of which are commonly connected to the second terminal of the first transistor, and a control terminal of which is connected to the second voltage; 利用该第一、第三、第四、第五及第六晶体管的耦接，使得流经该第二电阻的电流映射至该第一电阻，并在该第一电阻与该第一晶体管的该第二端连接处输出一能隙参考电压。Utilizing the coupling of the first, third, fourth, fifth and sixth transistors, the current flowing through the second resistor is mapped to the first resistor, and between the first resistor and the first transistor A bandgap reference voltage is output from the connection of the second terminal. 2.如权利要求1所述的能隙参考电路，其特征在于，该第一电压大于该第二电压。2. The bandgap reference circuit as claimed in claim 1, wherein the first voltage is greater than the second voltage. 3.如权利要求1所述的能隙参考电路，其特征在于，还具有一补偿电容，其一端连接于该第十晶体管的控制端，其另一端连接于该第二电压。3. The bandgap reference circuit as claimed in claim 1, further comprising a compensation capacitor, one terminal of which is connected to the control terminal of the tenth transistor, and the other terminal of which is connected to the second voltage. 4.如权利要求1所述的能隙参考电路，其特征在于，该第一、第三、第四及第九晶体管为相同的P型金属氧化物半导体场效应晶体管，该第一端皆为源极端，该第二端皆为漏极端，控制端皆为栅极端。4. The bandgap reference circuit according to claim 1, wherein the first, third, fourth and ninth transistors are the same P-type metal-oxide-semiconductor field-effect transistors, and the first terminals are all The source terminal and the second terminal are all drain terminals, and the control terminal is both a gate terminal. 5.如权利要求1所述的能隙参考电路，其特征在于，该第五、第六、第十及第十二晶体管为相同的N型金属氧化物半导体场效应晶体管，该第一端皆为漏极端，该第二端皆为源极端，控制端皆为栅极端。5. The bandgap reference circuit according to claim 1, wherein the fifth, sixth, tenth and twelfth transistors are the same NMOS field-effect transistors, and the first terminals are both is the drain terminal, the second terminal is both the source terminal, and the control terminal is both the gate terminal. 6.如权利要求1所述的能隙参考电路，其特征在于，该第二、第七及第十一晶体管为相同的pnp型双载子接面晶体管，该第一端皆为射极端，该第二端皆为集极端，控制端皆为基极端。6. The bandgap reference circuit according to claim 1, wherein the second, seventh and eleventh transistors are the same pnp type BJT transistors, the first terminals are all emitter terminals, The second terminals are all set terminals, and the control terminals are all base terminals. 7.如权利要求1所述的能隙参考电路，其特征在于，该第八晶体管为pnp型双载子接面晶体管，该第一端为射极端，该第二端为集极端，控制端皆为基极端。7. The energy gap reference circuit according to claim 1, wherein the eighth transistor is a pnp type bicarrier junction transistor, the first terminal is an emitter terminal, the second terminal is a collector terminal, and the control terminal All are base extremes. 8.如权利要求7所述的能隙参考电路，其特征在于，该第八晶体管的pn接面面积为该第二、第七及第十一晶体管的pn接面面积的整数倍，且至少为2倍。8. The bandgap reference circuit according to claim 7, wherein the pn junction area of the eighth transistor is an integer multiple of the pn junction areas of the second, seventh and eleventh transistors, and at least 2 times. 9.如权利要求7所述的能隙参考电路，其特征在于，该第八晶体管是由至少2个与该第二、第七及第十一晶体管相同的pnp型双载子接面晶体管耦接而成。9. The bandgap reference circuit according to claim 7, wherein the eighth transistor is coupled by at least two pnp-type BJTs identical to the second, seventh and eleventh transistors connected.
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| CN1896900B (en) * | 2005-07-13 | 2010-10-06 | 辉达公司 | Energy-level reference circuit |
| TWI350436B (en) * | 2005-10-27 | 2011-10-11 | Realtek Semiconductor Corp | Startup circuit, bandgap voltage genertor utilizing the startup circuit, and startup method thereof |
| CN103123512B (en) * | 2011-11-21 | 2015-03-25 | 联芯科技有限公司 | Band-gap reference circuit |
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* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472675A (en) * | 1981-11-06 | 1984-09-18 | Mitsubishi Denki Kabushiki Kaisha | Reference voltage generating circuit |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5245273A (en) * | 1991-10-30 | 1993-09-14 | Motorola, Inc. | Bandgap voltage reference circuit |
-
2003
- 2003-06-06 CN CNB031424260A patent/CN1300934C/en not_active Expired - Fee Related
Patent Citations (3)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472675A (en) * | 1981-11-06 | 1984-09-18 | Mitsubishi Denki Kabushiki Kaisha | Reference voltage generating circuit |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5245273A (en) * | 1991-10-30 | 1993-09-14 | Motorola, Inc. | Bandgap voltage reference circuit |
Also Published As
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| CN1553567A (en) | 2004-12-08 |
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