CN1922496A - Current detecting circuit, load drive, and storage - Google Patents
- ️Wed Feb 28 2007
CN1922496A - Current detecting circuit, load drive, and storage - Google Patents
Current detecting circuit, load drive, and storage Download PDFInfo
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Publication number
- CN1922496A CN1922496A CN 200580005619 CN200580005619A CN1922496A CN 1922496 A CN1922496 A CN 1922496A CN 200580005619 CN200580005619 CN 200580005619 CN 200580005619 A CN200580005619 A CN 200580005619A CN 1922496 A CN1922496 A CN 1922496A Authority
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Abstract
A current detecting circuit for stably detecting the current flowing through a load at all times with high accuracy by greatly reducing the power loss due to the detection of the current. The power supply voltage and a switch signal are supplied commonly to a power transistor and a current detecting transistor. An idling current is supplied to the output node of the current detecting transistor. A buffer circuit is provided so that the output voltages of both transistors may be the same virtual potentials. As a result, the buffer circuit is operated as a class-A amplifier circuit at all times.
Description
Technical field
The present invention relates to stable and detect current detection circuit accurately, use the load driving circuits of this current detection circuit and have memory storage by the motor of this load driving circuits driving at HDD or FDD mobile electric current in the load that waits memory storage with Spindle Motor etc.
Background technology
As the current detection circuit that is used for detecting the electric current that flows by the load of drivings such as transistor, current sense resistor is connected in series in this transistor or load, directly detect electric current by the voltage drop that causes by this current sense resistor, generally, this current detection circuit as the spy open flat 11-299292 communique (to call
patent documentation1 in the following text) or spy open in the 2003-174766 communique (to call
patent documentation2 in the following text) disclosed and use.
And, known to the disclosed current detection circuit of No. 2570523 communique of patent (to call patent documentation 3 in the following text), it makes detection flow through steady current with transistor, this detection is applied in the control voltage identical with the transistor that is connected in series in load with transistor, compare these two transistorized output voltages, thereby detect the intensity of load current.
In the current detection circuit of in the
past patent documentation1,2,, therefore cause power efficiency to reduce because the loss that caused by current sense resistor always takes place.And, when in the load driving circuits that bridgt circuit constitutes, when PWM drives load, PWM end during can not carry out current detecting itself.
And, in the current detection circuit of patent documentation 3, though less than the power attenuation that causes by current sense resistor, whether be the above intensity detection of setting owing to carry out load current, so, can not detect continuous load current.
Summary of the invention
Therefore, the objective of the invention is to, provide a kind of and can reduce the power attenuation of following current detecting significantly, and can often carry out current detecting, and can stablize, detect with low current loss accurately the current detection circuit of electric current and the load driving circuits that has used this current detection circuit.
Current detection circuit of the present invention comprises:
The 1st transistor, it is used for to load supply load electric current;
Current detecting transistor, its control electrode are applied in the control signal identical with the control signal that is applied to the 1st transistorized control electrode, are used for supplying with and the proportional proportional current of described load current;
Buffer circuit, its no-load current that has regulation supplies to the zero load current source of this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting move with the mode that the voltage of transistorized described output node equates, and output is with the detection electric current after described proportional current and the described no-load current addition; With
Translation circuit, its conversion is from the described detection electric current of this buffer circuit output, as output signal.
And current detection circuit of the present invention comprises:
The Current Control transistor, its control electrode is connected with output electrode;
The Control current of electric current changeable type is supplied with and is used current source, and it is used to make controlled electric current this Current Control transistor of flowing through;
The 1st transistor, it is connected with the transistor current mirror with described Current Control, is used for to load supply load electric current;
The current detecting transistor, it is connected with the transistor current mirror with described Current Control, is used for supplying with and the proportional proportional current of described load current;
Buffer circuit, its no-load current that has regulation supplies to the zero load current source of this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting move with the mode that the voltage of transistorized described output node equates, and output is with the detection electric current after described proportional current and the described no-load current addition; With
Translation circuit, its conversion is from the described detection electric current of this buffer circuit output, as output signal.
And described buffer circuit has: amplifier, and it is transfused to the described the 1st transistorized output voltage and the described current detecting voltage with transistorized output node; With the 3rd transistor, it is arranged on described current detecting with between transistorized output node and the described translation circuit, by the output control of described amplifier.
And, supply to described unloaded zero load supply voltage with current source, be than supplying to described the 1st transistor and described current detecting with high voltage of transistorized the 1st supply voltage or equal voltage.
And described current detection circuit has: on-off circuit, and it is arranged on described zero load current source; And comparer, it with described output signal and reference value relatively produces relatively output in described output signal during greater than described reference value, disconnects described on-off circuit by described relatively output.
And described comparer has the hysteresis characteristic of Rack.
In addition, described current detection circuit has: on-off circuit, and it is arranged on described zero load and uses current source, connects by airborne signals; And sequential circuit, it only exports described airborne signals in the 1st stipulated time according to the input of control command signal, and, begin through exporting described control signal after the 2nd stipulated time than described the 1st stipulated time weak point from described control command signal.
Load driving circuits of the present invention, has the 1st transistor AND gate the 2nd transistorized series circuit more than two groups of numbers part, described the 1st transistor is connected the 1st supply voltage and between the output point of load output, is switched on according to switching signal and ends, and is used for to the load supplying electric current; Described the 2nd transistor is connected between the output point and the 2nd supply voltage point of described load output, is switched into conducting by pwm switching signal and ends, and described load driving circuits forms single-phase or heterogeneous bridgt circuit, and the single-phase or multiphase load of PWM driving,
Corresponding to described each the 1st transistor, have: the current detecting transistor of described group of number part, it is applied in and is applied to the identical switching signal of the described the 1st transistorized switching signal, is used for supplying with and the proportional proportional current of described load current; With described group of number part buffer circuit, it has the zero load current source of supplying with the no-load current of regulation to this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting are moved with the mode that the voltage of transistorized described output node equates, and export detection electric current after described proportional current and the no-load current addition
Comprise translation circuit, it will gather from the described detection electric current of each buffer circuit output of described group of number part and be transformed to output signal.
And load driving circuits of the present invention has the current output circuit more than two groups of numbers part, and this current output circuit comprises: the Current Control transistor, and its control electrode is connected with output electrode; The Control current of electric current changeable type is supplied with and is used current source, and it is used to make controlled electric current this Current Control transistor of flowing through; The 1st transistor, it is connected with the transistor current mirror with described Current Control, is arranged on the 1st supply voltage and between the output point of load output, is used for to load supply load electric current; With the 2nd transistor, it is connected between the output point and the 2nd supply voltage point of described load output, is switched by switching signal, and described load driving circuits forms single-phase or heterogeneous bridgt circuit, and drives single-phase or multiphase load according to described Control current,
Corresponding to each described each the 1st transistor, have:
The current detecting transistor of described group of number part, it is connected with the transistor current mirror with described Current Control, is used for supplying with and the proportional proportional current of described load current;
Buffer circuit with described group of number part, it has the zero load current source of supplying with the no-load current of regulation to this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting are moved with the mode that the voltage of transistorized described output node equates, and export detection electric current after described proportional current and the no-load current addition
Comprise translation circuit, it will gather from the described detection electric current of each buffer circuit output of described group of number part and be transformed to output signal.
And described buffer circuit has: amplifier, and it is transfused to the described the 1st transistorized output voltage and the described current detecting voltage with transistorized output node; With the 3rd transistor, it is arranged on described current detecting with between transistorized output node and the described translation circuit, by the output control of described amplifier.
And described load driving circuits has: on-off circuit, and it is arranged at described zero load current source; And comparer, it with described output signal and reference value relatively produces relatively output in described output signal during greater than described reference value, disconnects described on-off circuit by described relatively output.
And described load driving circuits has: on-off circuit, and it is arranged at described zero load and uses current source, is switched on by airborne signals; And sequential circuit, it only exports described airborne signals in the 1st stipulated time according to the input of control command signal, and begins through exporting described switching signal after the 2nd stipulated time than described the 1st stipulated time weak point from described control command signal.
Memory storage of the present invention has: any described load driving circuits of the present invention; With motor by this load driving circuits drove.
According to the present invention, as the 1st transistor AND gate current detecting transistor of power transistor, common source voltage and switching signal, output voltage becomes imaginary same potential.When transistor is P type MOS, grid, the public connection of source electrode, drain electrode becomes imaginary same potential.Therefore,, compare, can reduce consumed power with direct detection in the past owing to utilize current detecting can detect load current with transistorized little electric current (N/one).
And, even in the load driving circuits of being controlled by PWM that bridge joint constitutes, when ending, PWM also can detect load current.Therefore, irrelevant with the PWM driving, can the continuous detecting load current.
And according to the present invention, the Control current that is provided with the electric current changeable type is supplied with and to be used current source, its be used to make controlled electric current to flow through Current Control transistor that control electrode is connected with output electrode.This Current Control is with transistor, connect into current mirror configuration as the 1st transistor and the current detecting of power transistor with transistor.The 1st transistor AND gate current detecting is with transistor common source voltage and control voltage, and their output voltage becomes imaginary same potential.When transistor is P type MOS, grid, the public connection of source electrode, drain electrode becomes imaginary same potential.Therefore,, compare, can reduce consumed power with direct detection in the past owing to utilize current detecting can detect load current with transistorized little electric current (N/one).
And, control with the current value of current source by Control current being supplied with according to the output signal of translation circuit, load current can be set at setting.Therefore, even Current Control than in comprises error with transistor AND gate the 1st transistorized current mirror, can the size of load current not exerted an influence yet.Thus, with respect to the 1st transistorized size, can make Current Control with transistorized size extremely little (for example, 1000: 1).
And because stepless control the 1st transistorized conducting degree and control load electric current, therefore, even in the load driving circuits that bridge joint constitutes, situation about driving with PWM is different, also can the continuous detecting load current.
And, because the no-load current that buffer circuit has regulation supplies to the zero load current source of current detecting with transistorized output node, so that the 1st transistorized output voltage and current detecting are moved with the mode that the voltage of transistorized output node equates, and output is with the detection electric current after proportional current and the no-load current addition, so, move as A level amplifying circuit.Thus, even when switch conduction initial, also can stably carry out current detecting.And,, can both stablize and carry out current detecting even when control action initial, hour at load current.And because load current and rectilinearity (linearity) raising that detects electric current, thereby can carry out current detecting accurately.
In addition, owing to become regulation when above (setting or after the stipulated time) and, therefore, can further reduce consumed power detecting electric current by no-load current.
Description of drawings
Fig. 1 is the pie graph of the current detection circuit of expression the 1st embodiment;
Fig. 2 shows the not equivalent circuit diagram of the current detection circuit of Fig. 1;
Fig. 3 is the pie graph of the current detection circuit of expression the 2nd embodiment;
Fig. 4 is the pie graph of the current detection circuit of expression the 3rd embodiment;
Fig. 5 is the performance plot that is used for the action of key diagram 4;
Fig. 6 is other performance plot that is used for the action of key diagram 4;
Fig. 7 is the pie graph of the current detection circuit of expression the 4th embodiment;
Fig. 8 is the pie graph of the current detection circuit of expression the 5th embodiment;
Fig. 9 is the sequential chart that is used for the action of key diagram 8;
Figure 10 is the pie graph of the current detection circuit of expression the 6th embodiment;
Figure 11 is the pie graph of the load driving circuits of expression the 7th embodiment;
Figure 12 is the pie graph of the load driving circuits of expression the 8th embodiment.
Embodiment
Below, with reference to accompanying drawing, current detection circuit of the present invention, the embodiment that uses the load driving circuits of this current detection circuit and have a memory storage of the motor that is driven by this load driving circuits are described.
Fig. 1 represents the current detection circuit of the 1st embodiment.Because drive load by this current detection circuit, so, also the current detection circuit of Fig. 1 can be called load driving circuits or load drive device.
Among Fig. 1, be connected in series with
load50, be connected in the 1st supply voltage V as the 1st transistorized P
type MOS transistor11 CCAnd between the ground.The
1st transistor11 flows through load current (output current) I1 in switching signal S1 (L level) conducting when putting on grid as control signal.In addition, under the situation of not specially provided in this manual, voltage is represented the current potential with respect to ground voltage.
Since establish current detecting with
transistor12 by definite N/one who is of a size of the size of the
1st transistor11 of channel width W and channel length L, so, by to its source electrode and the 1st identical supply voltage V of grid supply CCWith switching signal S1, can flow through the
electric current I1/N of N/ratio of load current I1.But situation is unequal mostly because this current detecting is used the drain voltage of
transistor12 and the drain voltage (output voltage) of the
1st transistor11, so, can not obtain correct proportional current I1/N under this situation.
Among the present invention, establish current detecting and use the drain voltage of
transistor12 to equate, and be provided with
distinctive buffer circuit100, so that stablize and carry out accurately current detecting with the drain voltage of the
1st transistor11.
This
buffer circuit100, have the voltage (drain voltage) of output node A1 of input the
1st transistor11 and current detecting
usefulness transistor12 output node B1 voltage (drain voltage) amplifier 13 (for example, can be operational amplifier), the output of establishing this
operational amplifier13 is the control signals as the 3rd transistorized N type MOS transistor 14.This
MOS transistor14 is connected between the output node B1 and
detection resistance19 of current detecting with transistor 12.In addition,
capacitor16 is used to prevent vibration and is provided with.
And
buffer circuit100 is connected with
current source15 between zero load is with supply voltage Vid and output node B1, this output node B1 is supplied with the no-load current Iid1 of regulation.
Current source15 is that steady current is good for constant current source, no-load current Iid1.In order to make the reliable in action of constant
current source15, wish that unloaded is than the 1st supply voltage V with supply voltage Vid CCHigh voltage.That is Vid1>V, CCIn addition, as zero load supply voltage Vid, also can use the 1st supply voltage V CC
Detect electric current I 12 from the output of
buffering circuit100, this detections electric current I 12 is with the proportional current I1/N of
transistor12 and the electric current that combines from the no-load current Iid1 of
current source15 from current detecting.
This detection electric current I 12 is flowed through and is detected
resistance19, and output is corresponding to this resistance value Rs and long-pending detection voltage (output signal) Vdet that detects electric current I 12.Detect the effect that
resistance19 plays translation circuit, detect voltage Vdet and supply to not shown control circuit.
In the current detection circuit of this Fig. 1, its action is described with reference to the equivalent circuit diagram of Fig. 2.Before supplying with switching signal S1 from control circuit (omitted diagram, below identical), the
1st transistor11, current detecting are ended with transistor 12.Output node A1 becomes high impedance (Hi-Z) or low-voltage (Low; No-voltage for example).Therefore, voltage ratio the 1st supply voltage V of output node A1 CCOr it is unloaded low with supply voltage Vid.On the other hand, the voltage of output node B1 is determined with supply voltage Vid by zero load.
Because
buffer circuit100 is so that move with the mode that the voltage of output node B1 equates as the voltage of output node A1 of its two inputs, therefore,
MOS transistor14 conductings are so that make the voltage decline of output node B1.By the conducting of
MOS transistor14, no-load current Iid1 flows through as detection electric current I 12 and detects resistance 19.Owing to flow through no-load current Iid1 before supplying with switching signal S1, therefore,
buffer circuit100 begins to move as A level amplifying circuit from the time point of supplying with switching signal S1.This no-load current Iid1 produces the bias voltage Rs * Iid1 that detects voltage Vdet.
If be supplied to switching signal S1, then the
1st transistor11 and current detecting
transistor12 conductings, load current I1 flows to load 50 from the
1st transistor11, corresponding to the conducting resistance r11 of the
1st transistor11 and amassing of load current I1, produces voltage drop in the 1st transistor 11.The voltage of output node A1 becomes the voltage that only hangs down this voltage drop I1 * r11 than the 1st power source voltage Vcc.At this moment, the voltage of output node B1 is controlled as with the voltage of output node A1 by
buffer circuit100 and equates.Current detecting becomes proportional current I1/N and current detecting with the voltage drop of
transistor12, and (=N's * r11) is long-pending with the conducting resistance r12 of transistor 12.Therefore, the
1st transistor11 and current detecting
transistor12, because source voltage, grid voltage and drain voltage are all equal, so, flow through current detecting becomes expection with the proportional current I1/N of
transistor12 value.
In the
1st transistor11 and the initial stage of current detecting with
transistor12 conductings, with this load current I1, proportional current I1/N hour, when supposing not have no-load current Iid1, will take place can not operating stably or proportional current I1/N do not become problems such as correct proportions with load current I1.
But, in the present invention, owing to before the
1st transistor11 and current detecting are with
transistor12 conductings, flow through no-load current Iid1, so
buffer circuit100 is understood and be moved as A level amplifying circuit.Therefore, the
1st transistor11 and current detecting with the initial stage of
transistor12 conductings, with this load current I1, proportional current I1/N hour, but the rectilinearity (linearity) of also operating stably, and load current and detection electric current improves, thereby can detect electric current accurately.
In addition, the
1st transistor11, current detecting also can replace P type MOS transistor with
transistor12, and use N type MOS transistor.And N
type MOS transistor14 also can be used bipolar transistor except that P type MOS transistor.
Fig. 3 represents the current detection circuit of the 2nd embodiment.In Fig. 3, be with the 1st embodiment difference of Fig. 1, as the 1st transistorized P
type MOS transistor11 and as current detecting with transistorized P
type MOS transistor12, can be by the control voltage Vsig control of any intensity.The others of Fig. 3 are identical with Fig. 1.Therefore, be that the center describes with this difference.
In Fig. 3, be connected in series with
load50 as the 1st transistorized P
type MOS transistor11, to flow through the mode of load current I1 in the
load50, be connected in the 1st supply voltage V CCAnd between the ground.Be provided with as current detecting with transistorized P
type MOS transistor12, it is used for supplying with and the proportional proportional current I1/N of this load current I1.
With transistorized P type MOS transistor 10, it is connected with drain electrode as output electrode as the grid of control electrode as Current Control, and supplies with the Control current of electric current changeable type and to be connected in series in the 1st supply voltage V with current source 7 CCAnd between the ground.
Current Control is connected with the grid of current detecting with
transistor12 with the
1st transistor11 with the grid of transistor 10, becomes current-mirror structure.Current Control becomes control voltage Vsig with the grid voltage of transistor 10.Promptly, because Current Control constitutes current mirroring circuit with transistor the 10, the
1st transistor11 and current detecting with
transistor12, therefore, with Current Control with proportional load current I1 of the Control current I0 that flows through in the transistor 10 and proportional current I1/N, in the
1st transistor11 and current detecting with flowing in the transistor 12.Here, Current Control is the remarkable little values of size N with respect to the
1st transistor11 with the size α by channel width W and channel length L decision of transistor 10, for example is set at 1/1000th.
Current source 7 is supplied to the error output of error amplifier 8, this error input is that error amplifier 8 amplifies reference voltage V ref1 and detects the poor of these two inputs of voltage (output signal) Vdet, according to this error output, its electric current of may command is the size of Control current I0.
Error amplifier 8 moves when being supplied to switching signal S1, produces the error output corresponding to the difference of two inputs.And, when not being supplied to switching signal S1, owing to do not produce this error output, so the Control current I0 of current source 7 is cut off.In addition, also switching signal S1 can be supplied to current source 7, by the direct Control current of switching signal S1 source 7 action or be failure to actuate.
The action of the current detection circuit of this Fig. 3 is described.Before supplying with switching signal S1 from control circuit (omit diagram, below identical), error amplifier 8 does not produce error output, and current source 7 ends, and Control current I0 is zero.Therefore, Current Control is ended with
transistor12 with transistor the 10, the
1st transistor11, current detecting, and load current I1 and proportional current I1/N also are zero.
If switching signal S1 is fed into error amplifier 8, then error amplifier 8 produces corresponding to reference voltage V ref1 and the error output that detects voltage Vdet.Current source 7 makes corresponding to the Control current I0 of this error output and flows through in transistor 10 in Current Control.According to this Control current I0, at the grid generation control voltage Vsig of Current Control with transistor 10, this control voltage Vsig is applied to the grid of the
1st transistor11 and current detecting
usefulness transistor12, makes Current Control carry out the current mirror action with transistor the 10, the
1st transistor11, current detecting with
transistor12.
In the
1st transistor11, flow to load 50 with the current mirror of transistor 10 than corresponding load current I1 with Current Control.Drain electrode at the
1st transistor11 produces and its conducting degree and the corresponding voltage of load current I1, the i.e. voltage of output node A1.At this moment, current detecting is with the drain voltage of
transistor12, i.e. the voltage of output node B1 is controlled as with the voltage of output node A1 by
buffer circuit100 and equates.Current detecting is used the conducting degree decision of
transistor12 by proportional current I1/N and current detecting with the voltage drop of transistor 12.Therefore, the
1st transistor11 and current detecting
transistor12 are because source voltage, grid voltage and drain voltage are all equal, so current detecting becomes the value of expection with the proportional current I1/N that flows in the
transistor12.
And feedback is based on the detection voltage Vdet that detects electric current I 12, and the mode that becomes setting (=reference voltage V ref1) with detection voltage Vdet is controlled.Therefore, if the
1st transistor11 and current detecting remain specified accuracy with the ratio of the current mirror between the
transistor12, even then Current Control can not impact circuit operation and current detecting with the precision of the current mirror ratio between transistor 10 and the 1st transistor 11 (and current detecting usefulness transistor 12) variation a little yet.Thus, can Current Control is minimum in the 1st transistor 11 (for example, about 1/1000th) with being sized for of transistor 10, same, also the current capacity of current source 7 can be made as minimum.
And, in Fig. 3, make its mode consistent carry out FEEDBACK CONTROL with detection feedback voltage Vdet, but be not to be defined in this with setting, also can constitute and will control the feedforward control that voltage Vsig is set at setting.When being made as feedforward control, for example can in Fig. 3, remove error amplifier 8, and current source 7 is supplied with the command signal of stipulating, and, also can remove Current Control usefulness transistor 10, current source 7, error amplifier 8, the control voltage Vsig of regulation is applied to the grid of the
1st transistor11, current detecting usefulness transistor 12.In addition, this point also is same in other embodiments.
Fig. 4 represents the related current detection circuit of the present invention the 3rd embodiment.Fig. 5 and Fig. 6 are the performance plots that is used for the action of key diagram 4.In the current detection circuit of this Fig. 4, stop the supply of no-load current Iid1 according to the size that detects electric current.
In Fig. 4, and the difference of Fig. 1 is: be provided with
current source15 and on-
off circuit17 between zero load is with supply voltage Vid and output node B1; And being provided with comparer 18, this comparer 18 relatively detects voltage Vdet and reference voltage V ref, when detecting voltage Vdet greater than reference voltage V ref, produces the relatively output that on-
off circuit17 is disconnected.In addition, when
current source15 can connect by the relatively output of comparer 18, when disconnecting, for example when
current source15 is current-mirror structure, also can be by relatively output connection, the turn-off
current source15 of comparer 18.Under this situation, can remove on-
off circuit17.
The action of the 3rd embodiment is described with reference to Fig. 4~Fig. 6.Before being supplied to switching signal S1, on-
off circuit17 is connected.If be supplied to switching signal S1, then same with the situation of Fig. 1, the
1st transistor11, current detecting be with
transistor12 conductings, output from current detecting with the proportional current I1/N of
transistor12, and the detection electric current I 12 that combines from the no-load current Iid1 of
current source15.
Comparer 18 is relatively by detecting detection voltage Vdet and the reference voltage V ref that electric current I 12 produces.When this detection voltage Vdet is zero at load current I1, produce the bias voltage that is equivalent to no-load current Iid1.Along with the increase of load current I1, detect voltage Vdet and also increase.Surpass reference voltage V ref if detect voltage Vdet, then the relatively output of comparer 18 is anti-phase, cut-off switch circuit 17.This reference voltage V ref is set at and that it(?) also can be only carries out the A level by proportional current I1/N even without no-load current Iid1 to amplify the magnitude of voltage of action be good.
Make no-load current Iid1 disappear owing to being disconnected, so the size that detects voltage Vdet has only reduced the size corresponding with no-load current Iid1 by on-off circuit 17.Owing to be set with the hysteresis of Rack (bigger) in the comparer 18, so its output can not fluctuateed than Iid1.
In addition, the relatively output of comparer 18 is supplied to control circuit,, promptly whether be added with biasing so that can judge among the detection voltage Vdet that supplies to control circuit whether contain no-load current Iid1 by control circuit.
Even be cut off because the proportional current I1/N that on-
off circuit17 is disconnected the stage becomes no-load current Iid1, also can not amplify the size that action exerts an influence to the A level, so, obtain on the correct detection electric current no problem.And, by by this no-load current Iid1, can reduce the consumed power of degree of correspondence.
Fig. 7 represents the related current detection circuit of the present invention the 4th embodiment.In this Fig. 7, as the 1st transistorized P
type MOS transistor11 and as current detecting with transistorized P
type MOS transistor12, can be by the control voltage Vsig control of any intensity, this point is different with the 3rd embodiment of Fig. 4.The others of Fig. 7 are identical with Fig. 4.
And, in Fig. 7,, identical with situation illustrated among the 2nd embodiment of Fig. 3 for aspect by control voltage Vsig control.
Fig. 8 represents the related current detection circuit of the present invention the 5th embodiment.Fig. 9 is the sequential chart that is used for the action of key diagram 8.In the current detection circuit of this Fig. 8, only during the driven initial specification of load, supply with no-load current Iid1, supply with through stopping after this time.
In Fig. 8, and the difference of Fig. 1 is: be provided with
current source15 and on-
off circuit17 between zero load is with supply voltage Vid and output node B1; And being provided with sequential circuit 17A, it accepts action command signal S0, produces airborne signals Sid and switching signal S1.In addition, when
current source15 can connect by airborne signals Sid, when disconnecting, for example when
current source15 be current-mirror structure, also can be by airborne signals Sid connection, turn-off current source 15.Under this situation, can remove on-
off circuit17.
The action of the 5th embodiment is described with reference to Fig. 8, Fig. 9.Before action command signal S0 was fed into sequential circuit 17A, the
1st transistor11, current detecting were all ended with
transistor12, on-off circuit 17.If the action command signal is supplied to sequential circuit 17A by S0, then sequential circuit 17A produces airborne signals Sid immediately, connects on-
off circuit17, makes it flow through no-load current Iid1.Be supplied to before the switching signal S1 identical among this state and Fig. 1.
When sequential circuit 17A is supplied to action command signal S0, for example begin to measure the elapsed time that begins from this moment t1 by counter.Moment t2 during only having measured since moment t1 behind the T2 has produced switching signal S1 (L level), makes the
1st transistor11, current detecting
transistor12 conductings.By making the
1st transistor11, current detecting
transistor12 conductings, same with the situation of Fig. 1, can export the detection electric current I 12 of the electric current that combines with the proportional current I1/N of
transistor12, with no-load current Iid1 from current detecting from
current source15.
Sequential circuit 17A continue to measure the elapsed time, since moment t1 through during T1 (moment t3 behind the T1>T2) stops to supply with airborne signals Sid, cut-off switch circuit 17.In addition, if stop to supply with action command signal S0 at moment t4, then switching signal S1 also disappears (H level), makes the action of current detection circuit stop.Preferred T1 during this period is set at: even without no-load current Iid1, the size of proportional current I1/N also will become can make
buffer circuit100 carry out the time that the A level is amplified the current value of action.
In addition, Sid supplies to control circuit with airborne signals, so that can judge among the detection voltage Vdet that supplies to control circuit whether contain no-load current Iid1 by control circuit, promptly whether is added with biasing.
Make no-load current Iid1 disappear owing to being disconnected by on-
off circuit17, therefore, the size that detects voltage Vdet only reduces the size corresponding with no-load current Iid1.But, even, also can not amplify the size that action impacts to the A level because the proportional current I1/N in the stage of T1 after the time of being disconnected of on-
off circuit17 becomes no-load current Iid1 is cut off, therefore obtain on the correct detection electric current no problem.And, same with Fig. 5, by by this no-load current Iid1, can reduce the consumed power of degree of correspondence.
Figure 10 represents the related current detection circuit of the present invention the 6th embodiment.In this Figure 10, as the 1st transistorized P
type MOS transistor11 and as current detecting with transistorized P
type MOS transistor12, can be by the control voltage Vsig control of any intensity, this point is different with the 5th embodiment of Fig. 8.The others of Figure 10 are identical with Fig. 8.
And, in Figure 10,, identical with situation illustrated among the 2nd embodiment of Fig. 3 for the aspect of controlling by control voltage Vsig.
Figure 11 represents the present invention the 7th embodiment load driving circuits related, that drive the Spindle Motor even load of HDD or FDD.
The load driving circuits of this Figure 11 has: the 1st series circuit of the
1st transistor11 and the 2nd transistor 51, described the
1st transistor11 is connected in the 1st power source voltage Vcc and between the output node A1 of
load50 output, be switched on according to switching signal S1 and end, be used for to load 50 supplying electric currents, described the 2nd transistor 51 be connected in to the output node A1 of
load50 output and the 2nd supply voltage point () between, be converted into conducting, end by pwm switching signal S3; The 2nd series circuit with the 1st transistor 21 and the 2nd transistor 61, described the 1st transistor 21 is connected in the 1st power source voltage Vcc and between the output node A2 of
load50 output, be switched on according to switching signal S2 and end, be used for to load 50 supplying electric currents, described the 2nd transistor 61 be connected in to the output node A2 of
load50 output and the 2nd supply voltage point () between, be converted into conducting, end by pwm switching signal S4.
Because this Figure 11 is the example of single-phase bridge connection circuit, therefore, the 1st transistor AND gate the 2nd transistorized series circuit group number is two groups.In the time of in applying the present invention to three-phase bridge circuit, the 1st transistor AND gate the 2nd transistorized series circuit group number is three groups.And then, can be applicable to heterogeneous situation too.
Like this, described series circuit with two groups of above group numbers, form single-phase or heterogeneous bridgt circuit, to drive in the load driving circuits of single-phase or multiphase load at PWM, with respect to each the
1st transistor11,21, the mode that comprises described circuit be provided with Fig. 1 in same current detection circuit, constitute the load driving circuits of Figure 11.
That is, current detecting
transistor12 is set, it is applied in the switching signal S1 identical with the switching signal S1 that is applied to the 1st transistor 11.The current detecting proportional proportional current I1/N of load current I1 that flows in
transistor12 supplies and the 1st transistor 11.
Buffer circuit100 has
current source15, it supplies with the no-load current Iid1 of regulation with the output node B1 of
transistor12 to this current detecting, so that the voltage of the output node A1 of the
1st transistor11 and current detecting are moved with the mode that the voltage of the output node B1 of
transistor12 equates, and, the detection electric current I 12 after export ratio electric current I 1/N and the no-load current Iid1 addition.Buffer circuit 200 also is the structure same with
buffer circuit100, an is-symbol difference (for example, relative 12 is 22).
And, being provided with and detecting resistance (translation circuit) 19, it will gather from detection electric current I 12, the I22 that the buffer circuit 100,200 that is set to many groups is respectively exported, and converts detection voltage (output signal) Vdet to.And, being provided with error amplifier 71, it is transfused to the indicated value Vtarget and detection voltage Vdet of indication speed and torque or electric current, and output is based on the error signal of the differences of these two inputs.This error signal is fed into the control circuit (omitting diagram) of control motor even load.
From the load driving circuits of the single-phase bridge connection circuit of this Figure 11, it is same to detect situation illustrated among the action of load current I1, I2 of each the
1st transistor11,21 and Fig. 1 etc.But, among the 7th embodiment of Figure 11,, therefore, the peculiar current detecting effect of following PWM control is described owing to be the load driving circuits that PWM drives.
In Figure 11, exist: 11 conductings of the 1st transistor, the 2nd transistor 61 is switched to the situation of conduction and cut-off by pwm switching signal S4; With 21 conductings of the 1st transistor, the 2nd transistor 51 is switched to the situation of conduction and cut-off by pwm switching signal S3.
If consider 11 conductings of the 1st transistor, the 2nd transistor 61 is switched to the situation of conduction and cut-off by pwm switching signal S4, and then when the 2nd transistor 61PWM conducting, load current I1 is shown in solid line among the figure, from the 1st supply voltage V CCThe 1st transistor 11-load 50-the 2nd transistor 61-ground begins to flow through.On the other hand, the 2nd transistor 61PWM by the time, load current I1 as shown in phantom in FIG., the path of parasitic diode-
Di1
transistor11 of the 1st transistor 11-load 50-the 1st transistor 21 of flowing through.
In the direct detection mode of in the past being undertaken by resistance, the load current I1 during the PWM conducting can't be detected.But, in the present invention, if load current I1 the
1st transistor11 of flowing through, then certainly detect during the PWM conducting, though PWM by the time also can continuous coverage proportional current I1/N.On the contrary, 21 conductings of the 1st transistor, the situation that the 2nd transistor 51 is switched into conduction and cut-off by pwm switching signal S3 is too.
In the load driving circuits of Figure 11, when for example Spindle Motor to memory storage carried out speed control, indicated value Vtarget was the torque indicated value.This torque indicated value Vtarget forms according to the speed setting value of Spindle Motor and the difference of its speed actual value.
When this Spindle Motor is carried out speed control, wish to detect the variation of electric current in order to carry out stable speed control, the variation that promptly detects voltage Vdet is continuous.Therefore, Once you begin after the speed control of Spindle Motor, it is good not interrupting no-load current Iid1, Iid2 and continuing to flow.Even continue flow no-load current Iid1, Iid2,, therefore can not exert an influence to load current I1, I2 owing to itself be steady state value.
Like this, continue to flow, can keep the degree of stability of motor speed control higher by not interrupting no-load current.
And no-load current Iid1, Iid2 also flow when stopping Spindle Motor, make that detecting voltage Vdet produces constant bias voltage, and on the other hand, the torque indicated value is zero.Under this situation, because therefore torque indicated value Vtarget, can eliminate the driving force (torque) of the motor when stopping reliably only than detecting low this bias voltage of voltage Vdet.
Under the state that does not have based on the bias voltage of this no-load current Iid1, Iid2, by influences such as noises, torque indicated value Vtarget etc. can be affected, and might produce torque in motor.But, continue to flow and apply bias voltage by not blocking no-load current ground, for example under noise circumstance, also can prevent the malfunction of motor mistake rotation.For this malfunction, be not to be defined in speed control, the situation of other control (for example, Current Control) can realize too.
And in the 7th embodiment of Figure 11, no-load current Iid1, Iid2 are also controlled to be made: only flow through any one party that needs conducting in the
1st transistor11 or 21.This control by be associated from the switching signal S1 of control circuit, the generation of S2, be used to control with output no-load current Iid1, Iid2 signal mode and realize.For example, be associated with switching signal S1, S2, it is good making
current source15,25 conductings or ending.
And, in the load driving circuits of Figure 11, also can add: as the cutoff control circuit the 3rd embodiment, that used the no-load current of on-
off circuit17 and comparer 18 of Fig. 4; Or as the 5th embodiment of Fig. 8, used the sequential control circuit of on-
off circuit17 with the no-load current of sequential circuit 17A.Under these situations, be preferably disposed on the on-off circuit of respectively using mutually in the driving
circuit17, make its conducting simultaneously or end (as the situation of Fig. 4) by relatively output, or make its conducting simultaneously or end (as the situation of Fig. 8) by airborne signals Sid from sequential circuit 17A from comparer 18.
Like this, according to 1 conducting of the 1st, the
2nd transistor11,2 or by and conducting or by no-load current Iid1, Iid2, or as Fig. 4 and Fig. 8, end control according to detecting voltage Vdet and elapsed time, for example be applicable to high precision and carry out by the load current I1 of Current Control drive shaft motor etc., the detection of I2.In addition, during by this Current Control CD-ROM drive motor, indicated value Vtarget becomes current instruction value.
Figure 12 represents the present invention the 8th embodiment load driving circuits related, that drive the Spindle Motor even load of HDD or FDD.
The load driving circuits of this Figure 12 is the example that drives the three-phase bridge circuit of three-
phase Spindle Motor50, has U and uses driving circuit 1W mutually with driving circuit 1V and W mutually with driving circuit 1U, V mutually.
Observe U and use driving circuit 1U mutually, be with its difference of Fig. 3 comparison of the 2nd embodiment: U is fed into Control current with control signal S1u mutually and supplies with current source 7, corresponding with it, control voltage Vsigu is fed into the grid of the
1st transistor11, current detecting
usefulness transistor12; The 2nd transistor 9 is connected between output node A1 and the ground; U is fed into the grid of the 2nd transistor 9 mutually with switching signal S2u; Output node A1 is connected the U phase coil terminal U of three-
phase Spindle Motor50 etc.The circuit of others and Fig. 3 is same.
Use driving circuit 1W with driving circuit 1V mutually with W mutually for V, only represent its part respectively in Figure 12, but only symbol is corresponding different, other uses driving circuit 1U identical with U mutually.Promptly be with its difference of Fig. 3 comparison of the 2nd embodiment: V is fed into Control current with control signal S1w mutually with control signal S1v, W mutually and supplies with current source 27,37, corresponding with it, control voltage Vsigv, Vsigw are fed into the grid of the 1st transistor 21,31; The 2nd transistor 29,39 is connected between output node A2, A3 and the ground; V is fed into the grid of the 2nd transistor 29,39 mutually mutually with switching signal S2w with switching signal S2v, W; Output node A2, A3 are connected V phase coil terminal V, the W phase coil terminal W etc. of three-
phase Spindle Motor50.
And, gather from each mutually with driving circuit 1U, 1V, 1W obtain respectively detect electric current I 12 ..., supply to and detect
resistance19.
Error amplifier 71 is relatively indicated the indicated value Vtarget of the speed that is transfused to and torque or electric current and is detected voltage Vdet, exports the error signal of these two inputs, supplies to grid control logic circuit 72.Error amplifier 71 moves when being supplied to switching signal S1.In addition, switching signal S1 also can supply to grid control logic circuit 72.
If switching signal S1 supplies to error amplifier 71, the logic used according to three-phase drive of grid control logic circuit 72 then produces each control signal S1u, S1v, the S1w of usefulness and each switching signal S2u, S2v, S2w of usefulness mutually mutually.Should each control signal S1u, S1v, the S1w of usefulness and each switching signal S2u, S2v, S2w of usefulness mutually mutually, be fed into Control current and supply with grid with current source 7,27,37 and the 2nd transistor 9,29,39.The logic of three-phase control usefulness, for example with to the U phase terminal of three-
phase motor50, V phase terminal, W phase terminal according to U → V, U → W, V → W, V → U, W → U, W → V, U → V ... the mode of order power supply, control the conducting degree of the
1st transistor11,21,31, and, open and close conversion the 2nd transistor 9,29,39.This grid control logic circuit 72 also can be contained in the not shown control circuit with other control part.
This Figure 12 is the example of three-phase bridge circuit, and therefore each is three with driving circuit mutually.When applying the present invention to the single-phase bridge connection circuit, each is two with driving circuit mutually.And, under the heterogeneous situation more than the three-phase, can use too.
Like this, the load driving circuits of Figure 12 is: have a plurality of driving circuit, single-phase or heterogeneous bridgt circuits of formation respectively used mutually, in the load driving circuits of the single-phase or multiphase load of Linear Driving, with respect to each the
1st transistor11,21,31 by control voltage Vsig Linear Control, with the mode that comprises described circuit be provided with Fig. 3 in same current detection circuit.
In addition, in the 8th embodiment of Figure 12, wish that each is identical current value with the no-load current Iid1 of driving circuit 1U, 1V, 1W etc. mutually.
In the load driving circuits of Figure 12, when for example Spindle Motor of speed control memory storage, indicated value Vtarget is the torque indicated value.This torque indicated value Vtarget forms according to the speed setting value of Spindle Motor and the difference of its speed actual value.
When this Spindle Motor of speed control, in order to carry out stable speed control, it is continuous that the variation of wishing to detect electric current promptly detects the variation of voltage Vdet.Therefore, Once you begin after the speed control of Spindle Motor, do not interrupt no-load current Iid1 ... it continue to be flowed for good.Even continue the no-load current Iid1 that flows ...,, therefore can not exert an influence to load current I1 owing to itself be steady state value.
Like this, continue to flow with not interrupting no-load current, can keep the degree of stability of the speed control of motor higher by making it.
And, no-load current Iid1 when stopping Spindle Motor ... also flow, make that detecting voltage Vdet produces constant bias voltage, on the other hand, the torque indicated value is zero.Under this situation, because torque indicated value Vtarget is only than detecting low this bias voltage of voltage Vdet, so, can eliminate the driving force (torque) of the motor when stopping reliably.
Do not have based on this no-load current Iid1 ... the state of bias voltage under, by influences such as noises, torque indicated value Vtarget etc. can be affected, and might produce torque in motor.But, continue to flow and apply bias voltage by not interdicting no-load current ground, for example can prevent also under noise circumstance that motor from misrouting moving malfunction.For this malfunction, be not to be defined in speed control, the situation of other control (for example, Current Control) can realize too.
In the load driving circuits of this Figure 12, can also add: as the cutoff control circuit the 4th embodiment, that used the no-load current of on-
off circuit17 and comparer 18 of Fig. 7; Or as the 6th embodiment of Figure 10, used the sequential control circuit of on-
off circuit17 with the no-load current of sequential circuit 17A.Under these situations, be preferably disposed on the on-
off circuit17 that each uses driving circuit mutually, make its conducting simultaneously or end (as the situation of Fig. 7) by relatively output, or make its conducting simultaneously or end (as the situation of Figure 10) by airborne signals Sid from sequential circuit 17A from comparer 18.
Like this, as Fig. 7 and shown in Figure 10,, for example be applicable to high precision and carry out detection by the load current I1 of Current Control drive shaft motor etc. according to detecting voltage Vdet or elapsed time by the control no-load current.In addition, during by this Current Control CD-ROM drive motor, indicated value Vtarget becomes current instruction value.
Industrial utilizability
According to current detection circuit of the present invention or use the load driving circuits of this current detection circuit, Can the storage device that HDD or FDD use etc. often be advanced with the electric current that flows in the main shaft motor even load Row current detecting, and reduce significantly and follow the power attenuation of current detecting, and can stablize, high accuracy Ground and detect electric current with low current loss.
Claims (13)
1. current detection circuit comprises:
The 1st transistor, it is used for to load supply load electric current;
Current detecting transistor, its control electrode are applied in the control signal identical with the control signal that is applied to the 1st transistorized control electrode, are used for supplying with and the proportional proportional current of described load current;
Buffer circuit, its no-load current that has regulation supplies to the zero load current source of this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting move with the mode that the voltage of transistorized described output node equates, and output is with the detection electric current after described proportional current and the described no-load current addition; With
Translation circuit, its conversion is from the described detection electric current of this buffer circuit output, as output signal.
2. current detection circuit comprises:
The Current Control transistor, its control electrode is connected with output electrode;
The Control current of electric current changeable type is supplied with and is used current source, and it is used to make controlled electric current this Current Control transistor of flowing through;
The 1st transistor, it is connected with the transistor current mirror with described Current Control, is used for to load supply load electric current;
The current detecting transistor, it is connected with the transistor current mirror with described Current Control, is used for supplying with and the proportional proportional current of described load current;
Buffer circuit, its no-load current that has regulation supplies to the zero load current source of this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting move with the mode that the voltage of transistorized described output node equates, and output is with the detection electric current after described proportional current and the described no-load current addition; With
Translation circuit, its conversion is from the described detection electric current of this buffer circuit output, as output signal.
3. current detection circuit according to claim 1 and 2 is characterized in that,
Described buffer circuit has: amplifier, and it is transfused to the described the 1st transistorized output voltage and the described current detecting voltage with transistorized output node; With the 3rd transistor, it is arranged on described current detecting with between transistorized output node and the described translation circuit, by the output control of described amplifier.
4. current detection circuit according to claim 1 and 2 is characterized in that,
Supplying to described unloaded zero load supply voltage with current source, is than supplying to described the 1st transistor and described current detecting with high voltage of transistorized the 1st supply voltage or equal voltage.
5. current detection circuit according to claim 1 and 2 is characterized in that,
Have: on-off circuit, it is arranged on described zero load current source; And comparer, it with described output signal and reference value relatively produces relatively output during greater than described reference value in described output signal,
Disconnect described on-off circuit by described relatively output.
6. current detection circuit according to claim 5 is characterized in that,
Described comparer has the hysteresis characteristic of Rack.
7. current detection circuit according to claim 1 and 2 is characterized in that,
Have: on-off circuit, it is arranged on described zero load and uses current source, is switched on by airborne signals; And sequential circuit, it only exports described airborne signals in the 1st stipulated time according to the input of control command signal, and, begin through exporting described control signal after the 2nd stipulated time than described the 1st stipulated time weak point from described control command signal.
8. load driving circuits; It has the 1st transistor more than two groups of numbers part and the series circuit of the 2nd transistor; Described the 1st transistor is connected the 1st supply voltage and between the output point of load output; Be switched according to the switch signal; Be used for supplying with electric current to load; Described the 2nd transistor is connected between the output point and the 2nd supply voltage point of described load output; Be switched to the conducting cut-off by pwm switching signal; Described load driving circuits forms single-phase or heterogeneous bridge joint circuit; And PWM drives single-phase or multiphase load
Corresponding to described each the 1st transistor, have: the current detecting transistor of described group of number part, it is applied in and is applied to the identical switching signal of the described the 1st transistorized switching signal, is used for supplying with and the proportional proportional current of described load current; Buffer circuit with described group of number part, it has the zero load current source of supplying with the no-load current of regulation to this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting are moved with the mode that the voltage of transistorized described output node equates, and export detection electric current after described proportional current and the described no-load current addition
Comprise translation circuit, it will gather from the described detection electric current of each buffer circuit output of described group of number part, is transformed to output signal.
9. load driving circuits, it has the current output circuit more than two groups of numbers part, and this current output circuit comprises: the Current Control transistor, its control electrode is connected with output electrode; The Control current of electric current changeable type is supplied with and is used current source, and it is used to make controlled electric current this Current Control transistor of flowing through; The 1st transistor, it is connected with the transistor current mirror with described Current Control, is arranged on the 1st supply voltage and between the output point of load output, is used for to load supply load electric current; With the 2nd transistor, it is connected between the output point and the 2nd supply voltage point of described load output, is switched by switching signal, and described load driving circuits forms single-phase or heterogeneous bridgt circuit, and drives single-phase or multiphase load according to described Control current,
Corresponding to described each the 1st transistor, have:
The current detecting transistor of described group of number part, it is connected with the transistor current mirror with described Current Control, is used for supplying with and the proportional proportional current of described load current;
Buffer circuit with described group of number part, it has the zero load current source of supplying with the no-load current of regulation to this current detecting with transistorized output node, so that the described the 1st transistorized output voltage and described current detecting are moved with the mode that the voltage of transistorized described output node equates, and export detection electric current after described proportional current and the described no-load current addition
Comprise translation circuit, it will gather from the described detection electric current of each buffer circuit output of described group of number part, is transformed to output signal.
10. according to Claim 8 or 9 described load driving circuits, it is characterized in that,
Described buffer circuit has: amplifier, and it is transfused to the described the 1st transistorized output voltage and the described current detecting voltage with transistorized output node; With the 3rd transistor, it is arranged on described current detecting with between transistorized output node and the described translation circuit, by the output control of described amplifier.
11. according to Claim 8 or 9 described load driving circuits, it is characterized in that,
Have: on-off circuit, it is arranged on described zero load current source; And comparer, it with described output signal and reference value relatively produces relatively output during greater than described reference value in described output signal,
Disconnect described on-off circuit by described relatively output.
12. according to Claim 8 or 9 described load driving circuits, it is characterized in that,
Have: on-off circuit, it is arranged on described zero load and uses current source, is switched on by airborne signals; And sequential circuit, it only exports described airborne signals in the 1st stipulated time according to the input of control command signal, and, begin through exporting described switching signal after the 2nd stipulated time than described the 1st stipulated time weak point from described control command signal.
13. a memory storage has:
Each described load driving circuits in the claim 8~12; With
By the motor that this load driving circuits drove.
Applications Claiming Priority (3)
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JP2004058573A JP4034279B2 (en) | 2004-03-03 | 2004-03-03 | Current detection circuit, load drive circuit, and storage device |
JP058573/2004 | 2004-03-03 | ||
JP058571/2004 | 2004-03-03 |
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CN1922496A true CN1922496A (en) | 2007-02-28 |
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CN113436663A (en) * | 2020-03-23 | 2021-09-24 | 铠侠股份有限公司 | Storage device |
CN113436663B (en) * | 2020-03-23 | 2024-04-05 | 铠侠股份有限公司 | Storage Devices |
CN112730957A (en) * | 2020-12-21 | 2021-04-30 | 华中科技大学 | Current detection circuit |
CN112730957B (en) * | 2020-12-21 | 2021-11-19 | 华中科技大学 | Current detection circuit |
CN114487544A (en) * | 2021-12-30 | 2022-05-13 | 西安拓尔微电子股份有限公司 | Current detection circuit and load driving device |
CN117783643A (en) * | 2024-02-27 | 2024-03-29 | 无锡力芯微电子股份有限公司 | Load current detection system |
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JP2005249519A (en) | 2005-09-15 |
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