CN204464968U - Overcurrent protection circuit, switching power supply circuit and electronic equipment based on thick film technology - Google Patents
- ️Wed Jul 08 2015
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Publication number
- CN204464968U CN204464968U CN201420870603.2U CN201420870603U CN204464968U CN 204464968 U CN204464968 U CN 204464968U CN 201420870603 U CN201420870603 U CN 201420870603U CN 204464968 U CN204464968 U CN 204464968U Authority
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- China Prior art keywords
- overcurrent protection
- processor
- palladium
- protection circuit
- capacitor Prior art date
- 2014-12-31 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004224 protection Effects 0.000 title claims abstract description 31
- 238000005516 engineering process Methods 0.000 title claims description 8
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000001514 detection method Methods 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims 13
- 238000001914 filtration Methods 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 4
- 208000031361 Hiccup Diseases 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model is applicable to field of switch power, and provide a kind of current foldback circuit based on thick-film technique, switching power circuit and electronic equipment, this current foldback circuit comprises: processor, switching tube, electric capacity C7, and palladium-silver conduction band; The input of switching tube is connected with the test side of processor, the control end of switching tube is connected with the regulation output end of processor, the output of switching tube is connected with one end of palladium-silver conduction band, the other end ground connection of palladium-silver conduction band, the power input (VP) of processor is connected supply voltage with voltage input end simultaneously, and the voltage input end of processor is also by electric capacity C7 ground connection.The utility model detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
Description
Technical field
The utility model belongs to field of switch power, particularly relates to a kind of current foldback circuit based on thick-film technique, DC/DC switching power circuit and thick-film electronic equipment.
Background technology
Thick film hybrid integrated circuit, on same substrate, make passive network by the thick-film technique such as silk screen printing and sintering, and assemble discrete semiconductor device chip or monolithic integrated circuit or micro element thereon, the hybrid integrated circuit of additional encapsulation again, compared with thin-film hybrid integrated circuit, the design of thick film hybrid integrated circuit is more flexible, simple process, with low cost, and higher voltage, larger power and larger electric current can be tolerated because of it, be particularly suitable for consumer with in the analog switched power supply circuit of industrial electronics.
Usually; based in the DC/DC Switching Power Supply of thick film hybrid integrated circuit technique; need that there is overcurrent protection function; and the mode realizing overcurrent protection is a lot; more employing be that the mode detected by primary current judges overcurrent condition, then control chip turns off the driving of metal-oxide-semiconductor and enters the pattern of hiccup protections.
At present, resistance detection or current transformer is generally adopted to detect for current detecting, but, in current detection circuit, use current sampling resistor or current transformer that power supply product volume can be caused greatly to increase, do not meet the consumption concept that existing market is more and more frivolous to electronic product.
Utility model content
The object of the utility model embodiment is to provide a kind of current foldback circuit based on thick-film technique, is intended to solve adopt resistance detection or current transformer to detect electric current to realize overcurrent protection and cause the problem that thick-film technique small product size is large.
The utility model embodiment is achieved in that a kind of current foldback circuit based on thick-film technique, comprising:
Processor, switching tube, electric capacity C7, and palladium-silver conduction band;
The input of described switching tube is that the test side of described current foldback circuit is connected with the test side (SWN) of described processor, the control end of described switching tube is connected with the regulation output end (NDRV) of described processor, the output of described switching tube is connected with one end of described palladium-silver conduction band, the other end ground connection of described palladium-silver conduction band, the power input (VP) of described processor and voltage input end (VIN) are simultaneously for the power end of described current foldback circuit is connected supply voltage, the voltage input end (VIN) of described processor is also by described electric capacity C7 ground connection, the output that the voltage output end (VOUT) of described processor is described current foldback circuit.
Further, described processor is pulse width modulator.
Further, described switching tube is N-type metal-oxide-semiconductor, and the drain electrode of described N-type metal-oxide-semiconductor is the input of described switching tube, and the source electrode of described N-type metal-oxide-semiconductor is the output of described switching tube, and the grid of described N-type metal-oxide-semiconductor is the control end of described switching tube.
Further, the sheet resistance of described palladium-silver conduction band and number formulary adjustable.
Another object of the utility model embodiment is, provide a kind of DC/DC switching power circuit based on thick-film technique, described switching power circuit comprises:
Transformer T1, rectification unit, filter unit, electric capacity C4, and the above-mentioned current foldback circuit based on thick-film technique;
The different name end of described transformer T1 first coil N1 is that the input of described switching power circuit is by described electric capacity C4 ground connection, the Same Name of Ends of described transformer T1 first coil N1 is connected with the test side of described rectification unit, the Same Name of Ends of described transformer T1 second coil N2 is connected with the input of described rectification unit, the different name end ground connection of described transformer T1 second coil N2, the output of described rectification unit is connected with the input of described filter unit, and the output of described filter unit is the output of described switching power circuit;
The test side of the described current foldback circuit based on thick-film technique is connected with the Same Name of Ends of described transformer T1 first coil N1; the power end of the described current foldback circuit based on thick-film technique is connected with the different name end of described transformer T1 first coil N1, and the output of the described current foldback circuit based on thick-film technique is connected with the output of described rectification unit.
Further, described rectification unit comprises:
Electric capacity C1 and diode D1;
One end of described electric capacity C1 is that the input of described rectification unit is connected with the anode of described diode D1, and the other end of described electric capacity C1 is the test side of described rectification unit, and the negative electrode of described diode D1 is the output of described rectification unit.
Further, described filter unit comprises:
Electric capacity C2 and electric capacity C3;
One end of described electric capacity C2 is input and the output of described filter unit simultaneously, is connected with one end of described electric capacity C3, the other end of described electric capacity C2 and the other end of described electric capacity C3 ground connection simultaneously.
Another object of the utility model embodiment is, provides a kind of thick-film electronic equipment adopting the above-mentioned current foldback circuit based on thick-film technique.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
Accompanying drawing explanation
The structure chart of the current foldback circuit based on thick-film technique that Fig. 1 provides for the utility model embodiment and the DC/DC switching power circuit based on thick-film technique;
The exemplary circuit structure chart of the current foldback circuit based on thick-film technique that Fig. 2 provides for the utility model embodiment and the DC/DC switching power circuit based on thick-film technique.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.In addition, if below in described each execution mode of the utility model involved technical characteristic do not form conflict each other and just can mutually combine.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
Below in conjunction with specific embodiment, realization of the present utility model is described in detail:
Fig. 1 shows the structure of the current foldback circuit based on thick-film technique that the utility model embodiment provides and the DC/DC switching power circuit based on thick-film technique, for convenience of explanation, illustrate only the part relevant to the utility model.
As the utility model one embodiment, should can be applied to the DC/DC switching power circuit of any thick-film technique and have in the thick-film electronic equipment of overcurrent protection function, particularly in thick film Switching Power Supply based on the current foldback circuit of thick-film technique.
Should comprise based on the current foldback circuit 1 of thick-film technique:
Processor 11, switching tube 12, electric capacity C7, and palladium-silver conduction band 13;
The input of switching tube 12 is that the test side of current foldback circuit 1 is connected with the test side (SWN) of processor 11, the control end of switching tube 12 is connected with the regulation output end (NDRV) of processor 11, the output of switching tube 12 is connected with one end of palladium-silver conduction band 13, the other end ground connection of palladium-silver conduction band 13, the power input (VP) of processor 11 and voltage input end (VIN) are simultaneously for the power end of current foldback circuit 1 is connected supply voltage, the voltage input end (VIN) of processor 11 is also by electric capacity C7 ground connection, the output that the voltage output end (VOUT) of processor 11 is current foldback circuit 1.
In the utility model embodiment, when switching tube 12 conducting, primary current linearly rises, and the voltage of this test point is detected in the test side (SWN) of processor 11.The duty ratio also corresponding increase of the driving voltage that the increase due to load current can make processor 11 provide, the increase of duty ratio can make again the ON time of switching tube elongated, primary current rises to larger peak current Ip, so the maximum of control load electric current can be carried out by the size controlling former limit peak current Ip, namely cross flow point.
So, when the electric current detected (voltage) is excessive, by the ON time (namely outputing signal duty ratio) of processor 11 by-pass cock pipe 12, thus regulating load electric current is in preset range, thus realizes overcurrent protection.
In the process detecting electric current, the conducting internal resistance of switching tube 12 and palladium-silver conduction band 13 form the effect of current sense resistor.Further, the sheet resistance of palladium-silver conduction band 13 is adjustable, and the test side SWN voltage threshold of processing unit 11 is fixing 0.5V, can also by regulating the mistake flow point of the number formulary regulating circuit of palladium-silver conduction band 13.
As the utility model one embodiment, this palladium-silver conduction band be rectangle or class rectangle there is the certain thickness bianry alloy conductor taking palladium as base and add silver, its resistance characteristic is be conductor resistance between 0.6-0.7um at thickness is 40m Ω/side, the adjustment therefore by regulating the number formulary of palladium-silver conduction band to realize the resistance of palladium-silver conduction band.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
Another object of the utility model embodiment is, provides a kind of DC/DC switching power circuit 2 based on thick-film technique, comprising:
Transformer T1, rectification unit 21, filter unit 22, electric capacity C4, and the current foldback circuit 1 based on thick-film technique in above-described embodiment;
The different name end of transformer T1 first coil N1 is by electric capacity C4 ground connection based on the input of the DC/DC switching power circuit 2 of thick-film technique, the Same Name of Ends of transformer T1 first coil N1 is connected with the test side of rectification unit 21, the Same Name of Ends of transformer T1 second coil N2 is connected with the input of rectification unit 21, the different name end ground connection of transformer T1 second coil N2, the output of rectification unit 21 is connected with the input of filter unit 22, and the output of filter unit 22 is the output of the DC/DC switching power circuit 2 based on thick-film technique;
Test side based on the current foldback circuit 1 of thick-film technique is connected with the Same Name of Ends of transformer T1 first coil N1; power end based on the current foldback circuit 1 of thick-film technique is connected with the different name end of transformer T1 first coil N1, and the output based on the current foldback circuit 1 of thick-film technique is connected with the output of rectification unit 21.
In the utility model embodiment, the course of work of boosting and step-down should be included based on the DC/DC switching power circuit 2 of thick-film technique, adopt SEPIC (single ended primary inductor converter) topological structure, its input voltage nominal value is 5V, in use procedure, input voltage likely changes between 3V-6V, output voltage is 3.3V, full-load current 2A, and crossing flow point is 2.5A-3A.
Processor 11 has current detecting port (SWN); the pressure drop on former limit circuit breaker in middle pipe 12 and palladium-silver conduction band 13 can be detected; if when this pressure drop exceeds the threshold voltage of processor 11 detection port (SWN); processor 11 turns off drive singal; former limit open circuit realizes overcurrent protection; restart subsequently and protect, entering hiccup protections pattern, having less overcurrent power consumption.
The utility model embodiment can finely tune the sheet resistance of palladium-silver conduction band 13 flexibly, such as: the welding conductors etc. by thickening to printing palladium-silver conduction band 13, on palladium-silver conduction band 13, the number formulary can also carrying out mating palladium-silver conductor in conjunction with the conducting internal resistance of switching tube 12 makes resistance adjustable, thus reaches the controlled object of flow point.
So, designing number formulary and the resistance of palladium-silver conduction band 13 with load current 3A, when load current 3A, is 6A by calculating former limit peak current.Processor 11 test side SWN threshold voltage is 0.5V, requires that the all-in resistance of switching tube 12 and palladium-silver conduction band 13 is: 0.5V/6A=83m Ω, and select conducting internal resistance to be the switching tube of 50m Ω, therefore palladium-silver conduction band 13 needs the impedance providing 33m Ω.According to the characteristic of palladium-silver conduction band 40m Ω/side (thickness 0.6 ~ 0.7um), add the palladium-silver conduction band of 1 side in circuit, and suitably thicken, make 1 sheet resistance value slightly be reduced to 33m Ω, to reach designing requirement.
Because extra introducing does not detect resistance; should be very little based on the volume of the DC/DC switching power circuit 2 of thick-film technique; requirement has overcurrent protection function; and flow point is 2.5 ~ 3A excessively; efficiency requirements is higher than 90%; output ripple voltage is less than 30mV (test bandwidth 20MHz), accords with the demands of the market completely.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
Fig. 2 shows the exemplary circuit structure of the current foldback circuit based on thick-film technique that the utility model embodiment provides and the DC/DC switching power circuit based on thick-film technique, for convenience of explanation, illustrate only the part relevant to the utility model.
As the utility model one embodiment, can pulse width modulator U1 be adopted based on the processor 11 in the current foldback circuit 1 of thick-film technique, for the turn-on and turn-off of control switch pipe, regulate duty ratio by feedback control loop.
As the utility model one embodiment, under the precondition that volume allows, the pipe 12 that opens the light should select conducting resistance little as far as possible, the N-type metal-oxide-semiconductor that On current is large, to reduce the conduction loss of switching tube, in order to avoid affect the operating efficiency of power supply.
The drain electrode of this N-type metal-oxide-semiconductor Q1 is the input of switching tube 12, and the source electrode of N-type metal-oxide-semiconductor Q1 is the output of switching tube 12, and the grid of N-type metal-oxide-semiconductor Q1 is the control end of switching tube 12.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
As the utility model one embodiment, can comprise based on the rectification unit 21 in the DC/DC switching power circuit 2 of thick-film technique:
Electric capacity C1 and diode D1;
One end of electric capacity C1 is that the input of rectification unit is connected with the anode of diode D1, and the other end of electric capacity C1 is the test side of rectification unit, and the negative electrode of diode D1 is the output of rectification unit.
Filter unit 22 can comprise:
Electric capacity C2 and electric capacity C3;
One end of electric capacity C2 is input and the output of filter unit simultaneously, is connected with one end of electric capacity C3, the other end of electric capacity C2 and the other end of electric capacity C3 ground connection simultaneously.
Another object of the utility model embodiment is, provides a kind of thick-film resistor equipment adopting the above-mentioned current foldback circuit based on thick-film technique.
The utility model embodiment detects load current by switching tube internal resistance and palladium-silver conduction band; when additionally not increasing current sense resistor; the impedance of regulating circuit is carried out by the number formulary changing palladium-silver conduction band; thus fine adjustment crosses flow point; realize the function of overcurrent protection; reduce circuit volume simultaneously, accord with the demands of the market.
These are only preferred embodiment of the present utility model, not in order to limit the utility model, all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (8)
1.一种基于厚膜工艺的过流保护电路，其特征在于，所述过流保护电路包括： 1. A kind of overcurrent protection circuit based on thick film technology, it is characterized in that, described overcurrent protection circuit comprises: 处理器、开关管、电容C7，以及钯银导带； Processor, switch tube, capacitor C7, and palladium-silver conduction band; 所述开关管的输入端为所述过流保护电路的检测端与所述处理器的检测端(SWN)连接，所述开关管的控制端与所述处理器的调节输出端(NDRV)连接，所述开关管的输出端与所述钯银导带的一端连接，所述钯银导带的另一端接地，所述处理器的功率输入端(VP)和电压输入端(VIN)同时为所述过流保护电路的电源端连接电源电压，所述处理器的电压输入端(VIN)还通过所述电容C7接地，所述处理器的电压输出端(VOUT)为所述过流保护电路的输出端。 The input terminal of the switch tube is connected to the detection terminal (SWN) of the processor for the detection terminal of the overcurrent protection circuit, and the control terminal of the switch tube is connected to the adjustment output terminal (NDRV) of the processor , the output end of the switch tube is connected to one end of the palladium-silver conduction band, the other end of the palladium-silver conduction band is grounded, and the power input terminal (VP) and the voltage input terminal (VIN) of the processor are simultaneously The power supply terminal of the overcurrent protection circuit is connected to the power supply voltage, the voltage input terminal (VIN) of the processor is also grounded through the capacitor C7, and the voltage output terminal (VOUT) of the processor is the power supply terminal of the overcurrent protection circuit. output terminal. 2.如权利要求1所述的过流保护电路，其特征在于，所述处理器为脉宽调制器。 2. The overcurrent protection circuit according to claim 1, wherein the processor is a pulse width modulator. 3.如权利要求1所述的过流保护电路，其特征在于，所述开关管为N型MOS管，所述N型MOS管的漏极为所述开关管的输入端，所述N型MOS管的源极为所述开关管的输出端，所述N型MOS管的栅极为所述开关管的控制端。 3. The overcurrent protection circuit according to claim 1, wherein the switch tube is an N-type MOS tube, the drain of the N-type MOS tube is the input terminal of the switch tube, and the N-type MOS tube The source of the tube is the output terminal of the switch tube, and the gate of the N-type MOS tube is the control terminal of the switch tube. 4.如权利要求1所述的过流保护电路，其特征在于，所述钯银导带的方阻和方数可调。 4. The overcurrent protection circuit according to claim 1, wherein the square resistance and square number of the palladium-silver conductive band are adjustable. 5.一种基于厚膜工艺的开关电源电路，其特征在于，所述开关电源电路包括： 5. A switching power supply circuit based on thick film technology, characterized in that, the switching power supply circuit comprises: 变压器T1、整流单元、滤波单元、电容C4，以及如权利要求1至4任一项所述的基于厚膜工艺的过流保护电路； Transformer T1, rectification unit, filter unit, capacitor C4, and the overcurrent protection circuit based on thick film technology according to any one of claims 1 to 4; 所述变压器T1第一线圈N1的异名端为所述开关电源电路的输入端通过所述电容C4接地，所述变压器T1第一线圈N1的同名端与所述整流单元的检测端连接，所述变压器T1第二线圈N2的同名端与所述整流单元的输入端连接， 所述变压器T1第二线圈N2的异名端接地，所述整流单元的输出端与所述滤波单元的输入端连接，所述滤波单元的输出端为所述开关电源电路的输出端； The opposite end of the first coil N1 of the transformer T1 is the input end of the switching power supply circuit grounded through the capacitor C4, and the same end of the first coil N1 of the transformer T1 is connected to the detection end of the rectification unit, so The same-name end of the second coil N2 of the transformer T1 is connected to the input end of the rectifier unit, the opposite-name end of the second coil N2 of the transformer T1 is grounded, and the output end of the rectifier unit is connected to the input end of the filter unit , the output end of the filtering unit is the output end of the switching power supply circuit; 所述基于厚膜工艺的过流保护电路的检测端与所述变压器T1第一线圈N1的同名端连接，所述基于厚膜工艺的过流保护电路的电源端与所述变压器T1第一线圈N1的异名端连接，所述基于厚膜工艺的过流保护电路的输出端与所述整流单元的输出端连接。 The detection end of the overcurrent protection circuit based on thick film technology is connected to the end of the same name of the first coil N1 of the transformer T1, and the power supply end of the overcurrent protection circuit based on thick film technology is connected to the first coil of the transformer T1. The opposite end of N1 is connected, and the output end of the overcurrent protection circuit based on thick film technology is connected with the output end of the rectification unit. 6.如权利要求5所述的开关电源电路，其特征在于，所述整流单元包括： 6. The switching power supply circuit according to claim 5, wherein the rectification unit comprises: 电容C1和二极管D1； Capacitor C1 and diode D1; 所述电容C1的一端为所述整流单元的输入端与所述二极管D1的阳极连接，所述电容C1的另一端为所述整流单元的检测端，所述二极管D1的阴极为所述整流单元的输出端。 One end of the capacitor C1 is the input end of the rectification unit connected to the anode of the diode D1, the other end of the capacitor C1 is the detection end of the rectification unit, and the cathode of the diode D1 is the rectification unit output terminal. 7.如权利要求5所述的开关电源电路，其特征在于，所述滤波单元包括： 7. The switching power supply circuit according to claim 5, wherein the filtering unit comprises: 电容C2和电容C3； Capacitor C2 and capacitor C3; 所述电容C2的一端同时为所述滤波单元的输入端和输出端，与所述电容C3的一端连接，所述电容C2的另一端与所述电容C3的另一端同时接地。 One end of the capacitor C2 is both the input end and the output end of the filter unit, and is connected to one end of the capacitor C3, and the other end of the capacitor C2 is grounded simultaneously with the other end of the capacitor C3. 8.一种电子设备，其特征在于，所述电子设备包括如权利要求1至4任一项所述的基于厚膜工艺的过流保护电路。 8. An electronic device, characterized in that the electronic device comprises the overcurrent protection circuit based on a thick film process according to any one of claims 1 to 4.
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| CN201420870603.2U CN204464968U (en) | 2014-12-31 | 2014-12-31 | Overcurrent protection circuit, switching power supply circuit and electronic equipment based on thick film technology |
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| CN201420870603.2U CN204464968U (en) | 2014-12-31 | 2014-12-31 | Overcurrent protection circuit, switching power supply circuit and electronic equipment based on thick film technology |
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Cited By (2)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106370912A (en) * | 2016-08-18 | 2017-02-01 | 李鹏 | Method, system and motor-driving system for improving MOSFET tube current sampling accuracy |
| CN109845083A (en) * | 2016-10-12 | 2019-06-04 | 日立汽车系统株式会社 | Power inverter and the system for using the device |
-
2014
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Cited By (5)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106370912A (en) * | 2016-08-18 | 2017-02-01 | 李鹏 | Method, system and motor-driving system for improving MOSFET tube current sampling accuracy |
| CN106370912B (en) * | 2016-08-18 | 2020-02-11 | 李鹏 | Method and system for improving current sampling precision of MOSFET (metal oxide semiconductor field effect transistor) tube and motor driving system |
| CN109845083A (en) * | 2016-10-12 | 2019-06-04 | 日立汽车系统株式会社 | Power inverter and the system for using the device |
| CN109845083B (en) * | 2016-10-12 | 2021-10-22 | 日立安斯泰莫株式会社 | Power conversion device and power conversion system using the same |
| US11171576B2 (en) | 2016-10-12 | 2021-11-09 | Hitachi Astemo, Ltd. | Power conversion device and system using the same |
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