CN207623826U - A kind of control circuit of metal-oxide-semiconductor driving voltage - Google Patents

The utility model embodiment discloses a kind of control circuit of metal-oxide-semiconductor driving voltage, which includes the first metal-oxide-semiconductor, regulator circuit and microcontroller chip, further includes booster circuit and the second metal-oxide-semiconductor；First output end of wherein microcontroller chip is connected with the grid of the second metal-oxide-semiconductor, and the on off state of the second metal-oxide-semiconductor is controlled for exporting control signal；The second output terminal of microcontroller chip is connected with booster circuit, for exporting square-wave signal；The output end of booster circuit is connected with the drain electrode of the grid of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor respectively, the target drives voltage for generating the first metal-oxide-semiconductor according to square-wave signal；Target drives voltage is combined with the on off state of the second metal-oxide-semiconductor, the on off state for controlling the first metal-oxide-semiconductor.By using said program, the driving voltage of the first metal-oxide-semiconductor gets a promotion.When the first metal-oxide-semiconductor is connected, internal resistance reduces, resistance to temperature characterisitic enhancing, while also having achieved the effect that reduce power consumption.

Control circuit of MOS tube driving voltage

Technical Field

The embodiment of the utility model provides a relate to the control circuit field, especially relate to a MOS manages drive voltage's control circuit.

Background

The MOS transistor is a common component in various control systems as a switching device, and the MOS transistor can interrupt, conduct or flow current in a circuit to other circuits, so as to control the working state of the electromechanical device.

Generally, the supply voltage for most electronic components such as MOS transistors is 5V based on industry standards. For an NPN type MOS tube, when the voltage Vgs between a grid electrode and a source electrode is 5V, the MOS tube is conducted; when Vgs is 0V, the MOS tube is turned off.

However, when the operating voltage of the MOS transistor is 5V, the internal resistance of the MOS transistor is large, which in turn results in large thermal power of the MOS transistor. If the working current of the MOS tube is larger when the MOS tube is conducted, the MOS tube is easily burnt due to overhigh thermal power. Meanwhile, when the operating voltage of the MOS transistor is 5V, the internal resistance of the MOS transistor is greatly affected by the temperature, that is, when the temperature changes greatly, the internal resistance of the MOS transistor also changes greatly, which is not favorable for the stability of the performance of the MOS transistor. Therefore, referring to the power consumption and temperature resistance characteristics of the MOS transistor during operation, when the driving voltage of the MOS transistor is 5V, the power consumption of the MOS transistor is large, and the temperature resistance of the MOS transistor is also poor.

SUMMERY OF THE UTILITY MODEL

For solving relevant technical problem, the utility model provides a MOS manages drive voltage's control circuit for the drive voltage of MOS pipe increases, and then reduces the internal resistance of MOS pipe, promotes the temperature resistant characteristic of MOS pipe.

In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions:

in a first aspect, an embodiment of the present invention provides a control circuit for driving voltage of a MOS transistor, including: first MOS pipe, voltage stabilizing circuit and micro-control chip, wherein, still include: the boost circuit and the second MOS tube; the input end of the voltage stabilizing circuit is connected with a power supply, and the output end of the voltage stabilizing circuit is respectively connected with the micro-control chip and the booster circuit and is used for converting power supply voltage into power supply voltage to respectively supply power to the micro-control chip and the booster circuit;

the first output end of the micro-control chip is connected with the grid electrode of the second MOS tube and is used for outputting a control signal to control the on-off state of the second MOS tube; the second output end of the micro-control chip is connected with the booster circuit and used for outputting a square wave signal based on the power supply voltage;

the output end of the booster circuit is respectively connected with the grid electrode of the first MOS tube and the drain electrode of the second MOS tube and is used for generating a target driving voltage of the first MOS tube according to the square wave signal; the target driving voltage is combined with the switching state of the second MOS tube and used for controlling the switching state of the first MOS tube.

Further, when the first output end of the micro-control chip outputs a high level signal, the second MOS transistor is turned on; when the first output end of the micro-control chip outputs a low level signal, the second MOS tube is switched off.

Further, the boost circuit comprises a divider resistor which is respectively connected with the grid electrode of the first MOS tube and the drain electrode of the second MOS tube;

when the second MOS tube is conducted, the divider resistor is grounded through the second MOS tube, and the first MOS tube is switched off;

when the second MOS tube is switched off, the first MOS tube is switched on under the driving of the target driving voltage.

Further, the control circuit further includes: the motor is connected with the drain electrode of the first MOS tube;

when the first MOS tube is conducted, the motor is controlled to rotate;

and when the first MOS tube is switched off, controlling the motor to stop rotating.

Further, the boosting circuit is a voltage doubling rectifying circuit.

Furthermore, the power supply voltage of the output end of the voltage stabilizing circuit is 5V; through the voltage doubling rectifying circuit, the generated target driving voltage of the first MOS tube is 10V.

Further, the booster circuit includes: a first capacitor, a second capacitor, a first diode and a second diode, wherein,

the anode of the first diode is connected with the output end of the voltage stabilizing circuit, and the cathode of the first diode is connected with the anode of the second diode;

the cathode of the second diode is used as the output end of the booster circuit and is grounded through the second capacitor;

the input end of the first capacitor is connected with the micro-control chip, and the output end of the first capacitor is connected with the anode of the second diode.

Further, the voltage stabilizing circuit is a voltage stabilizer.

Further, the first MOS transistor and the second MOS transistor are both NPN-type MOS transistors.

The utility model discloses among the technical scheme, voltage stabilizing circuit's input links to each other with the power, and the output links to each other with micro-control chip and boost circuit respectively for turn into power supply voltage with mains voltage, give micro-control chip and boost circuit power supply respectively. The first output end of the micro-control chip is connected with the grid electrode of the second MOS tube and used for outputting a control signal to control the on-off state of the second MOS tube. The second output end of the micro control chip is connected with the booster circuit and used for outputting square wave signals based on the power supply voltage. The output end of the booster circuit is respectively connected with the grid electrode of the first MOS tube and the drain electrode of the second MOS tube and is used for generating a target driving voltage of the first MOS tube according to the square wave signal; the target driving voltage is combined with the switching state of the second MOS tube and used for controlling the switching state of the first MOS tube. Through adopting above-mentioned technical scheme, the target drive voltage that drives first MOS pipe and switch on obtains effectively promoting for prior art's drive voltage, and when first MOS pipe switched on, its internal resistance reduced, and the temperature resistant characteristic of first MOS pipe strengthens, and then is favorable to the stability of first MOS pipe performance. In addition, the reduction of the internal resistance of the first MOS tube can also achieve the effect of reducing power consumption.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a control circuit for driving a voltage of a MOS transistor according to a first embodiment of the present invention;

fig. 2 is a schematic diagram of a control circuit of a preferred MOS transistor driving voltage according to a first embodiment of the present invention;

fig. 3 is a schematic diagram of a boost circuit according to an embodiment of the present invention.

Detailed Description

In order to make the technical problems, technical solutions and technical effects achieved by the present invention more clear, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings, and obviously, the described embodiments are only some embodiments, not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.

Example one

Fig. 1 is a schematic structural diagram of a control circuit for driving voltage of a MOS transistor according to an embodiment of the present invention. As shown in fig. 1, the control circuit 100 includes a first MOS transistor 110, a voltage stabilizing circuit 120, a micro-control chip 130, a voltage boost circuit 140, and a second MOS transistor 150. Wherein,

the input end of the voltage stabilizing circuit 120 is connected to a power supply, and the output end is connected to the micro-control chip 130 and the voltage boost circuit 140, respectively, for converting the power supply voltage into a power supply voltage to supply power to the micro-control chip 130 and the voltage boost circuit 140, respectively.

The first output end of the micro-control chip 130 is connected to the gate of the second MOS transistor 150, and is configured to output a control signal to control the on-off state of the second MOS transistor 150; a second output terminal of the micro-control chip 130 is connected to the voltage boost circuit 140 for outputting a square wave signal based on the supply voltage.

The output end of the boost circuit 140 is respectively connected to the gate of the first MOS transistor 110 and the drain of the second MOS transistor 150, and is configured to generate the target driving voltage of the first MOS transistor 110 according to the square wave signal. The target driving voltage is combined with the switching state of the second MOS transistor to control the switching state of the first MOS transistor 110.

Illustratively, the micro control chip may be a micro control unit such as a single chip microcomputer. The control signal output by the first output end of the micro-control chip can be a high-low level signal similar to a square wave signal, and is used for controlling the on and off of the second MOS tube. For example, when the first output end of the micro-control chip outputs a high-level signal, the second MOS transistor is turned on; when the first output end of the micro-control chip outputs a low level signal, the second MOS tube is switched off.

Illustratively, the boost circuit may be a double-voltage rectifier circuit, that is, a lower ac voltage may be obtained through a rectifier diode and a capacitor with higher withstand voltage, so as to obtain a higher dc voltage. And if the input of the voltage-doubling rectifying circuit is direct-current voltage, the voltage-doubling rectifying circuit plays a role in the control circuit: the output voltage of the voltage doubling rectifying circuit is boosted, so that the output voltage is increased to be twice of the input voltage. For example, when the supply voltage at the output end of the voltage stabilizing circuit is 5V, the target driving voltage of the output first MOS transistor is 10V through the voltage doubling rectifying circuit. Therefore, the driving voltage of the first MOS tube is effectively improved through the voltage doubling rectifying circuit. When the driving voltage of the first MOS transistor is raised from 5V in the prior art to 10V (i.e., Vgs is 10V), the internal resistance of the first MOS transistor can be effectively reduced, for example, to one fifth of the original internal resistance. According to the temperature resistance of the MOS tube, when Vgs of the first MOS tube is 10V, the internal resistance of the MOS tube does not obviously change along with the temperature. When the temperature is greatly changed, the internal resistance of the MOS transistor can be kept stable, and the stability of the performance of the first MOS transistor is further enhanced. In addition, if when the first MOS tube is applied to a high-power scene such as an automobile, the reduction of the internal resistance of the first MOS tube can also effectively reduce the power consumption of the first MOS tube, so that the heat productivity of the first MOS tube is reduced, and the risk of burning the first MOS tube is reduced.

Further, fig. 2 is a schematic diagram of a control circuit of a preferred MOS transistor driving voltage according to an embodiment of the present invention. As shown in fig. 2, the voltage stabilizing circuit 120 in the embodiment of the present invention is a voltage regulator, which is used to provide a stable power supply voltage for the micro-control chip 130 and the voltage doubling rectifying circuit 140. The voltage boost circuit in this embodiment may include a voltage dividing resistor R1 and a voltage doubling rectifying circuit 140, and as shown in fig. 2, one end of the voltage dividing resistor R1 is connected to the voltage doubling rectifying circuit, and the other end is connected to the gate of the first MOS transistor 110 and the drain of the second MOS transistor 150, respectively. When the second MOS tube is conducted, the divider resistor R1 is grounded through the second MOS tube, and at the moment, the first MOS tube is turned off; when the second MOS tube is switched off, the first MOS tube is switched on under the drive of the target drive voltage.

Furthermore, the embodiment of the present invention provides a control circuit for controlling a motor. As shown in fig. 2, the motor 160 is connected to the drain of the first MOS transistor 110. When the first MOS transistor is turned on, the motor 160 may be controlled to rotate; when the first MOS transistor is turned off, the motor 160 may be controlled to stop rotating.

Further, the first MOS transistor and the second MOS transistor may both be NPN MOS transistors.

The embodiment of the utility model provides a MOS manages drive voltage's control circuit links to each other with boost circuit through the second output with little accuse chip, and little accuse chip exportable square wave signal can control the target drive voltage of the first MOS pipe grid of boost circuit output. For the drive voltage of the MOS pipe that prior art provided, the embodiment of the utility model provides a through increasing boost circuit on prior art's basis, can be so that the target drive voltage of first MOS pipe grid is greater than the drive voltage that prior art provided. When the first MOS tube is conducted, the internal resistance of the first MOS tube can be reduced, and the temperature resistance of the first MOS tube is improved. In addition, the increase of the driving voltage of the first MOS tube can also achieve the effect of effectively reducing the power consumption of the first MOS tube.

Example two

The present embodiment is further refined on the basis of the above-mentioned embodiment, fig. 3 is a schematic diagram of a boost circuit provided in the second embodiment of the present invention, and the boost circuit in the present embodiment specifically describes a voltage-doubling rectifying circuit as an example. As shown in fig. 3, the booster circuit includes: a first capacitor C1, a second capacitor C2, a first diode D1, and a second diode D2, wherein,

the anode of the first diode D1 is connected with the output end of the voltage stabilizing circuit, and the cathode of the first diode D1 is connected with the anode of the second diode D2; the cathode of the second diode D2 is used as the output end of the booster circuit and is grounded through the second capacitor C2; the input end of the first capacitor C1 is connected to the micro control chip (shown as MCU), and the second end is connected to the anode of the second diode D2.

Illustratively, in this embodiment, the voltage at the output terminal of the voltage stabilizing circuit is 5V, and the voltage across the second capacitor (i.e., the output voltage of the voltage-doubling rectifying circuit) is 10V through the voltage-doubling rectifying circuit.

Specifically, the specific operating principle of the boost circuit provided in this embodiment is as follows: when the MCU outputs a low level signal, the first diode D1 and the second diode D2 are both conducted, the voltage stabilizing circuit outputs a voltage (5V in the figure) to the anode of the first diode D1, and the first capacitor C1 and the second capacitor C2 are charged through the first diode D1 and the second diode D2 until the voltage is charged to 5V. In addition, the voltage on the left side of the first capacitor C1 is 0V, and the voltage on the right side is 5V.

When the MCU outputs a high level, the voltage difference between the two ends of the first capacitor C1 cannot change abruptly, and the voltage on the left side of the first capacitor is 5V and the voltage on the right side is 10V. At this time, since the voltage (5V) of the anode of the first diode D1 is lower than the voltage (10V) of the cathode, the first diode D1 is not turned on. The voltage on the right side of the first capacitor C1 charges the second capacitor C2 through the second diode D2 until 10V is charged. When the voltage across the second capacitor C2 is 10V, the second diode D2 is turned off because the voltage of the anode and the cathode of the second diode D2 are both 10V. At this time, the voltage output from the booster circuit is 10V.

It should be noted that the voltage across the second capacitor cannot really reach 10V in the first few cycles of the square wave signal, but since the MCU always outputs the square wave signal to the voltage boost circuit, the voltage across the second capacitor can gradually stabilize to 10V after a few cycles, that is, the constant voltage output by the voltage boost circuit is 10V, that is, the target driving voltage of the first MOS transistor is increased to 10V. When the first MOS tube is conducted, because the voltage between the grid electrode and the source electrode (Vgs) of the first MOS tube is 10V, at the moment, when the Vgs is 5V, the internal resistance of the first MOS tube is effectively reduced, the temperature resistance of the first MOS tube is enhanced, and meanwhile, the power consumption of the first MOS tube is also effectively reduced.

In this embodiment, the above embodiments are refined, and if the voltage at the output end of the voltage regulator circuit is 5V, the boost circuit can output a stable voltage of 10V as the target driving voltage of the first MOS transistor. When the first MOS tube is conducted, the internal resistance of the first MOS tube is effectively reduced, and the effects of enhancing the temperature resistance of the first MOS tube and reducing the power consumption of the first MOS tube are achieved.

It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.