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EP1351491A1 - Reset function for image sensor - Google Patents

️Wed Oct 08 2003

EP1351491A1 - Reset function for image sensor - Google Patents

Reset function for image sensor Download PDF

Info

Publication number

EP1351491A1

EP1351491A1 EP02252403A EP02252403A EP1351491A1 EP 1351491 A1 EP1351491 A1 EP 1351491A1 EP 02252403 A EP02252403 A EP 02252403A EP 02252403 A EP02252403 A EP 02252403A EP 1351491 A1 EP1351491 A1 EP 1351491A1 Authority

European Patent Office

Prior art keywords

reset

image sensor

values

pixel

voltage

Prior art date

2002-04-02

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Withdrawn

Application number

EP02252403A

Other languages

German (de)

French (fr)

Inventor

Robert Henderson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics Ltd Great Britain

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics Ltd

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-04-02

Filing date

2002-04-02

Publication date

2003-10-08

2002-04-02 Application filed by SGS Thomson Microelectronics Ltd, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Ltd

2002-04-02 Priority to EP02252403A priority Critical patent/EP1351491A1/en

2003-04-01 Priority to US10/405,101 priority patent/US7280140B2/en

2003-10-08 Publication of EP1351491A1 publication Critical patent/EP1351491A1/en

Status Withdrawn legal-status Critical Current

Images

Classifications

- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

This invention relates to an image sensors with an active pixel array, suitable for fabrication in CMOS.
kT/C noise As is well known, one source of noise in active pixel image sensors is thermally generated or kT/C noise, which is generated when the active pixels are released from reset. As pixels are decreased in size, kT/C noise becomes the dominant temporal noise source. A typical 5.6 ⁇ m pixel with 3fF capacitance will have kT/C noise of 1.67mV rms.
One object of the present invention is to allow a reduction in the size of frame store in a system of this kind.
the present invention provides a method of operating an image sensor, as defined in claim 1.
the invention also provides an image sensor as defined in claim 4.
an image sensor has an array of active pixel, 3-transistor pixels one of which is seen at 10, each pixel comprising a photodiode 11 and transistors M1, M2, M3. Each column shares a reset voltage line VRT and a read line Vx.
the column has sampling capacitors 12 and 14 connected as inputs to a comparator 16.
FIG. 2 shows the timing of the previously proposed double read system.
Pixel row n is released form reset by the falling edge of reset[n].
Signals REFSMP and CDSSIG then pulse simultaneously to sample the black reference voltage Vblkref as Vblk and the pixel output voltage is Vsig.
the samples Vadc1 are placed in a frame store.
the output frame is produced by subtraction Vadc1 - Vadc2 for row n yielding the result Vsig.
the kT/C noise Vnrst is correlated between the two samples since the pixel row was not reset and so is cancelled by the subtraction.
Frame store size is determined by the spread of voltages in Vadc1.
the source follower transistors M3 In practical sensors with small pixels, the source follower transistors M3 must be small to maintain a large photosensitive area for high efficiency.
Vt variation is related to transistor gate area and so the variation of Vgsn due to the source follower devices can be large, up to about 300mV worst case.
Figures 4 and 5 show the reset frame line timing and the signal frame line timing, respectively, in one embodiment of the present invention.
Vnrst contains a DC offset due to capacitive coupling between the pixel and the reset(n) line and charge injected from the channel of the reset transistor M2. There is also a random distribution of Vnrst due to parasitic capacitance mismatches and variation of the amount of channel charge of M2 as a result of Vt mismatches. This variation has been determined experimentally to be quite low, around a few mV. The frame store must have enough bits to digitise the distribution of Vrst and the noise Vnrst.
Vrst DC contribution can be up to a few 100mV.
Figure 6 shows an example of how this can be accomplished, corresponding timings being shown in Figure 7.
a single slope ramp generator 18 is used in conjunction with a comparator output switch 20 to latch a count from a counter (not shown).
the signal PIXSMP is asserted during the inter-line period while read(n) is high.
the Vblk voltage is sampled with respect to Voff, the DC offset voltage, and the voltage across the capacitor 14 is then (Vblk-Voff).
the bottom plate of capacitor 12 is set to 0V and the top plate will be at Vblk-Voff.
AD conversion proceeds by applying the ramp output of ramp generator 18 to the bottom plate of capacitor 12.
Vsig+Vramp > Vblk-Voff the comparator 16,20 changes state and the digital count is latched.
the span of voltage to be converted can be reduced to the extremes of the distributions of Vrst and Vnrst, which is only a few mV.
the number of clock cycles over which the ramp generator requires to operate can be reduced to ⁇ 100.
a typical timing for a reset and a signal line can be seen in Figure 7.
the present invention thus permits a significant reduction in the size of frame store required to perform a "double read” operation of a 3-transsitor active pixel array.

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Engineering & Computer Science (AREA)
Multimedia (AREA)
Signal Processing (AREA)
Transforming Light Signals Into Electric Signals (AREA)

Abstract

A solid state image sensor has an array of pixels (10) in which each column has a reset voltage line (VRT) and a read line (Vx). The sensor is reset and read a row at a time, with reset-related values held in a frame store for subsequent subtraction from read values. Reset-related values are derived in each column by sampling the voltage during reset on one capacitor (14) and the voltage on release of reset on a second capacitor (12), and differencing these values (16) to provide an output for the frame store. This gives a reduction in the size of frame store which would otherwise be required. <IMAGE>

Description

This invention relates to an image sensors with an active pixel array, suitable for fabrication in CMOS.

As is well known, one source of noise in active pixel image sensors is thermally generated or kT/C noise, which is generated when the active pixels are released from reset. As pixels are decreased in size, kT/C noise becomes the dominant temporal noise source. A typical 5.6µm pixel with 3fF capacitance will have kT/C noise of 1.67mV rms.

In our European Patent Application 01310582.0 filed 19 December 2001, we have proposed a "double read" system in which reset values for each line and signal values for each line are read out line-by-line and interleaved, with the reset values being held in a frame store for later subtraction from corresponding read values, the number of line periods separating the reset and read signals being selectable to control the image exposure.

Although this prior proposal is effective in reducing noise, it does require a relatively large frame store. One object of the present invention is to allow a reduction in the size of frame store in a system of this kind.

The present invention provides a method of operating an image sensor, as defined in claim 1. The invention also provides an image sensor as defined in claim 4.

Preferred features and advantages of the invention will be apparent from the following description and the remaining claims.

An embodiment of the invention will now be described, by way of example only, with reference to the drawings, in which:

Figure 1 is a schematic diagram illustrating part of an active pixel image sensor;

Figures 2 and 3 are timing diagrams showing the operation of the circuit of Figure 1 in a known manner;

Figures 3 and 4 are timing diagrams showing one example of operation in accordance with the present invention;

Figure 6 is a schematic diagram of a modified form of image sensor forming an alternative embodiment; and

Figure 7 is a timing diagram for the circuit of Figure 6.

Referring to Figure 1, an image sensor has an array of active pixel, 3-transistor pixels one of which is seen at 10, each pixel comprising a

photodiode

11 and transistors M1, M2, M3. Each column shares a reset voltage line VRT and a read line Vx. The column has

sampling capacitors

12 and 14 connected as inputs to a

comparator

16.

Figure 2 shows the timing of the previously proposed double read system. Pixel row n is released form reset by the falling edge of reset[n]. Signals REFSMP and CDSSIG then pulse simultaneously to sample the black reference voltage Vblkref as Vblk and the pixel output voltage is Vsig, The AD conversion processes the sampled differential voltage:

Vadc1 = Vblkref - (VRT - Vgsn - Vrst - Vnrst)

for each column, where Vgsn is the source follower gate-source voltage and Vnrst is the kT/C noise. The samples Vadc1 are placed in a frame store.

After an exposure time, row n is re-read and the timing is shown in Figure 3. The pixel is read prior to reset by pulsing REFSMP and CDSSIG simultaneously as before. Vblkref is sample as Vblk and the pixel output voltage is sampled as Vsig.
The ADC processes the difference:

Vadc2 = Vblkref - (VRT-Vgsn-Vrst-Vnrst-Vsig).

The output frame is produced by subtraction Vadc1 - Vadc2 for row n yielding the result Vsig. The kT/C noise Vnrst is correlated between the two samples since the pixel row was not reset and so is cancelled by the subtraction.

Frame store size is determined by the spread of voltages in Vadc1. In practical sensors with small pixels, the source follower transistors M3 must be small to maintain a large photosensitive area for high efficiency. Vt variation is related to transistor gate area and so the variation of Vgsn due to the source follower devices can be large, up to about 300mV worst case.

Figures 4 and 5 show the reset frame line timing and the signal frame line timing, respectively, in one embodiment of the present invention.

During the reset frame CDSBLK pulses while the reset line reset(n) is asserted. The voltage VRT-Vgsn is stored on the

Vblk CDS capacitor

14. Subsequently, reset(n) falls and the row of pixels is released from reset. CDSSIG pulses sampling voltage VRT-Vgsn-Vrst-Vnrst on the Vsig capacitor 12 (where Vrst is the charge injection and reset coupling voltage, typically around 300mV, and Vnrst is the kT/C reset noise). The ADC processes the difference:

Vadc1 = VRT-Vgsn-(VRT-Vgsn-Vrst-Vnrst).

This result is stored in the frame store ready for subsequent subtraction from the signal frame. However, the value that requires to be stored is

Vrst + Vnrst

which requires no Vgsn distribution, leading to reduced memory requirements for the frame store.

Vnrst contains a DC offset due to capacitive coupling between the pixel and the reset(n) line and charge injected from the channel of the reset transistor M2. There is also a random distribution of Vnrst due to parasitic capacitance mismatches and variation of the amount of channel charge of M2 as a result of Vt mismatches. This variation has been determined experimentally to be quite low, around a few mV. The frame store must have enough bits to digitise the distribution of Vrst and the noise Vnrst.

After m lines of exposure line n is read again.
This time the read sequence is as follows. CDSSIG pulses, sampling VRT-Vgsn-Vrst-Vsig-Vnrst onto the Vsig CDS capacitor 12 (where Vsig is the light-induced signal swing). Subsequently, reset(n) is asserted, resetting the pixel to VRT and then CDSBLK pulses, reading the voltage VRT-Vgsn onto the

Vblk CDS capacitor

14. The ADC converts the difference:

Vadc2 = VRT-Vgsn-(VRT-Vgsn-Vrst-Vsig-Vnrst)

which gives:

Vrst+Vsig+Vnrst

The results of the two AD conversions are subtracted (Vadc1-Vadc2) to yield the value Vsig. The contributions of Vrst and Vnrst are cancelled.

Note that the Vrst DC contribution can be up to a few 100mV. By subtracting a fixed DC offset from Vblk during sampling, the input range of the AD converter can be reduced. In a single slope column parallel AD converter this means that conversion can be achieved in fewer clock cycles and occupies less line time.

Figure 6 shows an example of how this can be accomplished, corresponding timings being shown in Figure 7. Here, a single

slope ramp generator

18 is used in conjunction with a comparator output switch 20 to latch a count from a counter (not shown).

The signal PIXSMP is asserted during the inter-line period while read(n) is high. The Vblk voltage is sampled with respect to Voff, the DC offset voltage, and the voltage across the

capacitor

14 is then (Vblk-Voff). During AD conversion PIXSMP=0 and RMPSMP=1. The bottom plate of

capacitor

12 is set to 0V and the top plate will be at Vblk-Voff. AD conversion proceeds by applying the ramp output of

ramp generator

18 to the bottom plate of

capacitor

12. When Vsig+Vramp > Vblk-Voff, the

comparator

16,20 changes state and the digital count is latched.

If the voltage Voff is correctly chosen the span of voltage to be converted can be reduced to the extremes of the distributions of Vrst and Vnrst, which is only a few mV. The number of clock cycles over which the ramp generator requires to operate can be reduced to <100. A typical timing for a reset and a signal line can be seen in Figure 7.

The foregoing scheme is sensitive to noise on the VRT reference voltage; any movement in VRT between the CDSSIG and CDSBLK pulses will introduce line noise in the image. However, an advantage of taking two closely spaced samples from the column is the removal of 1/f noise due to the source follower.

The present invention thus permits a significant reduction in the size of frame store required to perform a "double read" operation of a 3-transsitor active pixel array.

Claims (7)

A method of operating an image sensor, the image sensor having an array of pixels arranged in rows and columns; the method comprising:

reading reset-related values from the pixels a row at a time and storing these values in a frame store;

reading signal-related values from the pixels a row at a time, interleaved with reading of the rows of signal-related values;

the reading of said two values for a given row being offset by a number of row periods selected to control the exposure of the image sensor; and subtracting the reset-related value for each pixel from the signal-related value of the same pixel to give an output signal for that pixel;

and in which the reset-related values stored in the frame store are produced by differencing two pixel values which are sampled and stored during reset and on release from reset, respectively.
The method of claim 1, in which each pixel contains a source follower transistor and said differencing is effective to eliminate from the stored value the effect of the source follower gate-source voltage.
The method of claim 1 or claim 2, including the further step of subtracting a DC offset voltage from the black reference voltage during sampling.
An image sensor comprising an array of pixels arranged in rows and columns, each pixel comprising a photosensitive element and switching means operable to apply a reset voltage to the photosensitive element and to read signal voltages therefrom;
the image sensor further comprising timing and storage means operable to sample and hold pixel values during reset and release from reset, respectively,
and a difference circuit arranged to output to a frame store the difference between said sampled values.
An image sensor according to claim 4, in which each column of he array has a readout line connectable by a pair of switches to a pair of sample capacitors, said capacitors forming the input to said difference circuit.
An image sensor according to claim 5, including means for applying a DC offset voltage to one of said capacitors which in use holds a reset-related value.
An image sensor according to claim 6, , in which analogue-to-digital conversion is provided by a ramp generator arranged to apply a ramp voltage to the other capacitor.

EP02252403A 2002-04-02 2002-04-02 Reset function for image sensor Withdrawn EP1351491A1 (en)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
EP02252403A EP1351491A1 (en)	2002-04-02	2002-04-02	Reset function for image sensor
US10/405,101 US7280140B2 (en)	2002-04-02	2003-04-01	Image sensor reading during reset and reading on release from reset

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP02252403A EP1351491A1 (en)	2002-04-02	2002-04-02	Reset function for image sensor

Publications (1)

Publication Number	Publication Date
EP1351491A1 true EP1351491A1 (en)	2003-10-08

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Application Number	Title	Priority Date	Filing Date
EP02252403A Withdrawn EP1351491A1 (en)	2002-04-02	2002-04-02	Reset function for image sensor