JPH02184079A - Method of forming ferroelectric memory device - Google Patents
- ️Wed Jul 18 1990
JPH02184079A - Method of forming ferroelectric memory device - Google Patents
Method of forming ferroelectric memory deviceInfo
-
Publication number
- JPH02184079A JPH02184079A JP1004041A JP404189A JPH02184079A JP H02184079 A JPH02184079 A JP H02184079A JP 1004041 A JP1004041 A JP 1004041A JP 404189 A JP404189 A JP 404189A JP H02184079 A JPH02184079 A JP H02184079A Authority
- JP
- Japan Prior art keywords
- film
- ferroelectric
- memory device
- forming
- ferroelectric memory Prior art date
- 1989-01-11 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は強誘電体記憶装置の表面保護膜及び電極膜材料
構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface protection film and an electrode film material structure of a ferroelectric memory device.
従来、強誘電体記憶装置の表面保護膜は形成されないか
、あるいは形成されたとしてもＳｉＯ２膜であるのが通
例であった。Conventionally, a surface protective film of a ferroelectric memory device was not formed, or even if it was formed, it was usually a SiO2 film.
また従来、強誘電体記憶装置の’ｍ極膜は、通常Ａ１膜
を用いていた。Further, in the past, an A1 film was usually used as the m-pole film of a ferroelectric memory device.
しかし、」二記従来技術によると、強誘電体記憶装置に
おける強誘電体膜からの酸素等の成分離脱が防止できず
、強誘電体記憶装置の書き込み、消去回数が１０目回程
度に制限されるという課題があった０本発明はかかる従
来技術の課題を解決し、強誘電体記憶装置の書き込み、
消去回数をＩＱ１１回以上にする為に必要な強誘電体膜
表面の保護膜材寧゛１構成及び電（セ膜材料構成を提供
する事を目的とする。However, according to the prior art described in Section 2, it is not possible to prevent components such as oxygen from leaving the ferroelectric film in the ferroelectric memory device, and the number of times of writing and erasing of the ferroelectric memory device is limited to approximately 10 times. The present invention solves the problems of the prior art and improves the writing and writing of ferroelectric memory devices.
The object of the present invention is to provide a structure of a protective film material on the surface of a ferroelectric film and a structure of an electric film material necessary to increase the number of erasures to IQ 11 times or more.
上記課題を解決するために、本発明は強訴電体記憶装置
の形成法に関し、
（１）強誘電体膜の保護膜にアルカリ土類金属の弗化物
膜を形成する手段をとる事、及び（２）強誘電体膜の保
護膜として、りんガラス膜を形成する手段をとる事、及
び
（３）強誘電体膜の保護膜として、強誘電体組成成分の
酸化膜、あるいは窒化膜、あるいは弗化膜を形成する手
段をとる事、及び
（４）強誘電体記憶膜への形成？ｌｃ極膜として、Ｔｉ
Ｓ ｗ、Ｍｏ、Ｎｂ、Ｎｉ、ＣｒやＴｉＷ等の高融点金
属膜あるいは該高融点金属の硅化膜あるいは窒化膜を形
成する手段をとる事、等である。In order to solve the above problems, the present invention relates to a method for forming a ferroelectric memory device, which includes: (1) forming an alkaline earth metal fluoride film on a protective film of a ferroelectric film; 2) To form a phosphor glass film as a protective film for the ferroelectric film, and (3) to use an oxide film, a nitride film, or a fluoride film of the ferroelectric composition as a protective film for the ferroelectric film. (4) Formation into a ferroelectric memory film? As the lc polar film, Ti
For example, a method may be taken to form a film of a high melting point metal such as SW, Mo, Nb, Ni, Cr, or TiW, or a silicide film or nitride film of the high melting point metal.
強訴電体記憶装置における強誘電体膜の劣化の原因は、
例えば酸化物系強誘電体の場合には、主として、電界印
加による還元反応すなわち、酸素の離脱によるものと考
えられる。該酸素の離脱を防ぐには、まず、適当な保護
膜を形成する事であり、できれば該保護膜に過剰な酸素
等のガス成分を有しているものを用いるのも、又一方法
である。The cause of the deterioration of the ferroelectric film in the ferroelectric memory device is
For example, in the case of an oxide-based ferroelectric material, it is thought that the reduction reaction is mainly due to the application of an electric field, that is, the elimination of oxygen. In order to prevent the release of oxygen, it is first necessary to form an appropriate protective film, and if possible, it is another method to use a protective film that contains an excess gas component such as oxygen. .
又、強誘電体膜に形成する電極膜材料も大いに酸素等の
ガス成分の離脱と関係があり、Ａ１等の酸化され易い金
属膜を′ｒｒｊ、極膜に用いると、強誘電体膜からＡ１
が酸素を離脱させる訳で、該酸素等のガス成分の離脱を
防ぐには、高融点金属等が好ましい作用をなす訳である
。In addition, the material of the electrode film formed on the ferroelectric film is also closely related to the release of gas components such as oxygen, and if a metal film that is easily oxidized such as A1 is used for the electrode film, A1 will be removed from the ferroelectric film.
This means that oxygen is released, and a high melting point metal or the like has a preferable effect in order to prevent the release of gas components such as oxygen.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、チタン酸バリウム強誘電体膜表面にＣａＦ２等の
アルカリ土類金属の弗化物膜を形成するか、Ｍ ｇ Ｆ
２の如き、吸湿性のアルカリ土類金属の弗化物膜には
更に５ｉｓＮ４膜を積層に形成し、電極膜をＴｉ、
Ｗ、 Ｍｏ、 Ｎｂ、 Ｔａ、 Ｎｉ、 Ｃ
ｒ＋ ＴｉＷ、ＴｉＳｉ、ＷＳｉ、ＭｏＳｉ、ＮｂＳ
ｉ。Now, either a fluoride film of an alkaline earth metal such as CaF2 is formed on the surface of the barium titanate ferroelectric film, or M g F
2, a 5isN4 film is further formed in a laminated manner on the hygroscopic alkaline earth metal fluoride film, and the electrode film is made of Ti,
W, Mo, Nb, Ta, Ni, C
r+ TiW, TiSi, WSi, MoSi, NbS
i.
Ｔ ａ ３ ｉ、 Ｎ ｉ Ｓ ｉ、 Ｃｒ Ｓ
ｉ、 Ｔ ｉ Ｎ、 Ｗ Ｎ。T a 3 i, N i S i, Cr S
i, T i N, W N.
Ｍ ｏ Ｎ、 Ｎ ｂ Ｎ、 Ｔ ａ Ｎ、 Ｎ
ｉ Ｎ、 Ｃｒ Ｎ等の高融点金ｌ１ｉｉＩＩ！４
やその硅化膜や窒化膜を用いる事により、強誘電体膜に
電圧を印加して記憶の書き込み、消去を１０１５回以上
行なっても、記憶電圧の劣化は殆んど無くなる １０＋
ｓ回と言う書き込み、消去回数は、例えばＩＭＨ２で動
作させた場合、２５年間程度は連続して動作させる事が
出来るわけで、強誘電体記憶装置を一時的な記憶保持と
して用いるのみでなく、連続的に、不揮発なランダム・
アクセス・メモリとして作用させても良い事となる。M o N, N b N, T a N, N
High melting point gold such as iN, CrN, etc. 4
By using the silicide film or nitride film, there is almost no deterioration in the storage voltage even if a voltage is applied to the ferroelectric film and memory is written and erased more than 1015 times.10+
The number of times of writing and erasing, called s times, means that when operating with IMH2, for example, it can be operated continuously for about 25 years, so the ferroelectric memory device is not only used for temporary memory retention, but also Continuous, non-volatile random
It is also possible to use it as an access memory.
また、チタン酸バリウム強誘電体膜表面にりんガラス膜
を保護膜として形成してもりんガラス膜中のＰ２Ｏ５が
酸素の供給源となり、強誘電体膜からの動作時の酸素の
離脱に対し、酸素の供給源となり、前記弗化物膜の例と
同様の効果がある。前例の弗化物膜の場合は、弗素が酸
素の離脱を埋めて代替する作用があり、強誘電体膜が弗
化物の場合には、強誘電体膜ｔｆｓの弗素の離脱を表面
弗化膜中の弗素が補給する作用がある。Furthermore, even if a phosphorous glass film is formed as a protective film on the surface of the barium titanate ferroelectric film, P2O5 in the phosphorous glass film becomes an oxygen supply source, and prevents oxygen from leaving the ferroelectric film during operation. It serves as an oxygen supply source and has the same effect as the fluoride film example. In the case of the fluoride film in the previous example, fluorine has the effect of filling and replacing the loss of oxygen, and in the case of a ferroelectric film made of fluoride, the loss of fluorine in the ferroelectric film tfs is absorbed by the surface fluoride film. The fluorine has a replenishing effect.
尚、りんガラス膜の場合には、吸湿性があるので更に表
面は耐湿性のある３ｉ＊Ｎａ膜を形成して用いるのが好
ましい。In the case of a phosphor glass film, since it has hygroscopic properties, it is preferable to form a moisture-resistant 3i*Na film on the surface.
また、チタン酸バリウム強誘電体膜を例にとると、チタ
ン酸バリウムの組成成分であるＴｉの酸化膜を保護膜と
して用いても同様の効果があり、更に、強誘電体膜は、
チタン酸バリウムに限らずＰＺＴ （Ｋ−Ｚｎ−Ｔｉ酸
化物）等の他の強誘電体膜であっても良い事は、本例以
前の例示の場合でも同様であり、ＰＺＴ強銹強請膜表面
に、酸化亜鉛膜等の保護膜を形成しても良く、又、組成
成分の酸化膜のみならず組成成分の窒化膜や弗化膜の中
で絶縁性のあるものを保護膜として用いても良い。又、
弗化物膜はアルカリ土類金属の弗化物膜に限らず、Ｃｒ
Ｆ、ＮｉＦ等他の金属弗化物膜であっても良い。Taking a barium titanate ferroelectric film as an example, a similar effect can be obtained by using an oxide film of Ti, which is a compositional component of barium titanate, as a protective film.
Not only barium titanate but also other ferroelectric films such as PZT (K-Zn-Ti oxide) may be used, as is the case with the examples given before this example. In addition, a protective film such as a zinc oxide film may be formed, or an insulating film among the nitride and fluoride films, as well as the oxide film of the compositional components, may be used as the protective film. good. or,
Fluoride films are not limited to alkaline earth metal fluoride films, but also Cr
Other metal fluoride films such as F and NiF may also be used.
更に、強誘電体膜が窒化物膜の場合には、５ｔｓＮ４膜
による保護膜はより効果的である。Furthermore, when the ferroelectric film is a nitride film, a protective film made of a 5tsN4 film is more effective.
本発明により、強訴電体記憶装置を一時的な不揮発メモ
リとしてのみならず、連続動作可能な不揮発メモリとし
て動作させる事ができる効果があると井に、例えば、半
導体集積回路基板上に、積層して形成することができる
効果等もある。According to the present invention, it is believed that the electronic memory device can be operated not only as a temporary non-volatile memory but also as a non-volatile memory that can operate continuously. There are also effects that can be created by
Claims (4)
【特許請求の範囲】[Claims]
（１）強誘電体膜の保護膜として、アルカリ土類金属の
弗化物膜を形成する事を特徴とする強誘電体記憶装置の
形成法。(1) A method for forming a ferroelectric memory device characterized by forming an alkaline earth metal fluoride film as a protective film for a ferroelectric film.
（２）強誘電体膜の保護膜として、りんガラス膜を形成
する事を特徴とする強誘電体記憶装置の形成法。(2) A method for forming a ferroelectric memory device characterized by forming a phosphor glass film as a protective film for a ferroelectric film.
（３）強誘電体膜の保護膜として、強誘電体組成成分の
酸化膜あるいは窒化膜あるいは弗化膜を形成する事を特
徴とする強誘電体記憶装置の形成法。(3) A method for forming a ferroelectric memory device characterized by forming an oxide film, a nitride film, or a fluoride film of a ferroelectric component as a protective film for a ferroelectric film.
（４）強誘電体記憶膜への形成電極膜として、Ｔｉ、Ｗ
、Ｍｏ、Ｎｂ、Ｔａ、Ｎｉ、ＣｒやＴｉＷ等の高融点金
属膜あるいは、該高融点金属の硅化膜あるいは窒化膜を
形成する事を特徴とする強誘電体記憶装置の形成法。(4) As an electrode film formed on a ferroelectric memory film, Ti, W
, Mo, Nb, Ta, Ni, Cr, TiW, or other high melting point metal film, or a silicide film or nitride film of the high melting point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1004041A JPH02184079A (en) | 1989-01-11 | 1989-01-11 | Method of forming ferroelectric memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1004041A JPH02184079A (en) | 1989-01-11 | 1989-01-11 | Method of forming ferroelectric memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02184079A true JPH02184079A (en) | 1990-07-18 |
Family
ID=11573859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1004041A Pending JPH02184079A (en) | 1989-01-11 | 1989-01-11 | Method of forming ferroelectric memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02184079A (en) |
Cited By (7)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992003849A1 (en) * | 1990-08-21 | 1992-03-05 | Seiko Epson Corporation | Semiconductor device, semiconductor memory using the same, cmos semiconductor integrated circuit, and process for fabricating the semiconductor device |
| US5396095A (en) * | 1991-05-08 | 1995-03-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor |
| US5438023A (en) * | 1994-03-11 | 1995-08-01 | Ramtron International Corporation | Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like |
| EP0766319A2 (en) * | 1995-09-29 | 1997-04-02 | Sony Corporation | Capacitor having ferroelectric film for nonvolatile memory cell, and method of manufacturing the same |
| JPH09116115A (en) * | 1995-06-26 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Method for manufacturing capacitor of semiconductor device |
| EP0738009A3 (en) * | 1993-08-05 | 1998-04-15 | Matsushita Electronics Corporation | Semiconductor device having capacitor |
| US5902131A (en) * | 1997-05-09 | 1999-05-11 | Ramtron International Corporation | Dual-level metalization method for integrated circuit ferroelectric devices |
-
1989
- 1989-01-11 JP JP1004041A patent/JPH02184079A/en active Pending
Cited By (12)
* Cited by examiner, † Cited by third party| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992003849A1 (en) * | 1990-08-21 | 1992-03-05 | Seiko Epson Corporation | Semiconductor device, semiconductor memory using the same, cmos semiconductor integrated circuit, and process for fabricating the semiconductor device |
| US5523595A (en) * | 1990-08-21 | 1996-06-04 | Ramtron International Corporation | Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film |
| US5396095A (en) * | 1991-05-08 | 1995-03-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor |
| US5554559A (en) * | 1991-05-08 | 1996-09-10 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric |
| KR100285871B1 (en) * | 1991-05-08 | 2001-04-16 | 요트.게.아. 롤페즈 | Semiconductor device including capacitor having ferroelectric and manufacturing method thereof |
| EP0738009A3 (en) * | 1993-08-05 | 1998-04-15 | Matsushita Electronics Corporation | Semiconductor device having capacitor |
| US5438023A (en) * | 1994-03-11 | 1995-08-01 | Ramtron International Corporation | Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like |
| US5578867A (en) * | 1994-03-11 | 1996-11-26 | Ramtron International Corporation | Passivation method and structure using hard ceramic materials or the like |
| JPH09116115A (en) * | 1995-06-26 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Method for manufacturing capacitor of semiconductor device |
| EP0766319A2 (en) * | 1995-09-29 | 1997-04-02 | Sony Corporation | Capacitor having ferroelectric film for nonvolatile memory cell, and method of manufacturing the same |
| EP0766319A3 (en) * | 1995-09-29 | 1998-04-22 | Sony Corporation | Capacitor having ferroelectric film for nonvolatile memory cell, and method of manufacturing the same |
| US5902131A (en) * | 1997-05-09 | 1999-05-11 | Ramtron International Corporation | Dual-level metalization method for integrated circuit ferroelectric devices |
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