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JPH0349107A - Conducting paste for aluminum nitride sintered body - Google Patents

  • ️Fri Mar 01 1991

JPH0349107A - Conducting paste for aluminum nitride sintered body - Google Patents

Conducting paste for aluminum nitride sintered body

Info

Publication number
JPH0349107A
JPH0349107A JP18307589A JP18307589A JPH0349107A JP H0349107 A JPH0349107 A JP H0349107A JP 18307589 A JP18307589 A JP 18307589A JP 18307589 A JP18307589 A JP 18307589A JP H0349107 A JPH0349107 A JP H0349107A Authority
JP
Japan
Prior art keywords
powder
metal
group
sintered body
aluminum nitride
Prior art date
1989-07-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18307589A
Other languages
Japanese (ja)
Inventor
Rieko Saitou
西塔　利江子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemi Con Corp
Original Assignee
Nippon Chemi Con Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1989-07-15
Filing date
1989-07-15
Publication date
1991-03-01
1989-07-15 Application filed by Nippon Chemi Con Corp filed Critical Nippon Chemi Con Corp
1989-07-15 Priority to JP18307589A priority Critical patent/JPH0349107A/en
1991-03-01 Publication of JPH0349107A publication Critical patent/JPH0349107A/en
Status Pending legal-status Critical Current

Links

  • PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 15
  • 239000000203 mixture Substances 0.000 claims abstract description 16
  • 239000000843 powder Substances 0.000 claims abstract description 16
  • 229910052751 metal Inorganic materials 0.000 claims abstract description 15
  • 239000002184 metal Substances 0.000 claims abstract description 15
  • 239000011521 glass Substances 0.000 claims abstract description 8
  • BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 9
  • CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
  • BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 4
  • 239000004020 conductor Substances 0.000 claims description 3
  • WPFGFHJALYCVMO-UHFFFAOYSA-L rubidium carbonate Chemical compound [Rb+].[Rb+].[O-]C([O-])=O WPFGFHJALYCVMO-UHFFFAOYSA-L 0.000 claims description 3
  • 229910000026 rubidium carbonate Inorganic materials 0.000 claims description 3
  • XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 2
  • 229910052808 lithium carbonate Inorganic materials 0.000 claims description 2
  • 229910000027 potassium carbonate Inorganic materials 0.000 claims description 2
  • 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
  • 239000000758 substrate Substances 0.000 abstract description 14
  • 239000011230 binding agent Substances 0.000 abstract description 5
  • 238000006243 chemical reaction Methods 0.000 abstract description 4
  • 239000001856 Ethyl cellulose Substances 0.000 abstract description 2
  • ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 abstract description 2
  • 229920001249 ethyl cellulose Polymers 0.000 abstract description 2
  • 235000019325 ethyl cellulose Nutrition 0.000 abstract description 2
  • 238000004898 kneading Methods 0.000 abstract description 2
  • 239000003960 organic solvent Substances 0.000 abstract description 2
  • 229910052763 palladium Inorganic materials 0.000 abstract description 2
  • 229910052709 silver Inorganic materials 0.000 abstract description 2
  • SKBXVAOMEVOTGJ-UHFFFAOYSA-N xi-Pinol Chemical compound CC1=CCC2C(C)(C)OC1C2 SKBXVAOMEVOTGJ-UHFFFAOYSA-N 0.000 abstract 2
  • 101100453572 Arabidopsis thaliana KCO3 gene Proteins 0.000 abstract 1
  • 229910012988 LiCo3 Inorganic materials 0.000 abstract 1
  • 101100453573 Oryza sativa subsp. japonica TPKC gene Proteins 0.000 abstract 1
  • 238000000034 method Methods 0.000 description 5
  • 239000000654 additive Substances 0.000 description 4
  • PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
  • 230000000694 effects Effects 0.000 description 3
  • 238000004519 manufacturing process Methods 0.000 description 3
  • 239000000463 material Substances 0.000 description 3
  • 238000005245 sintering Methods 0.000 description 3
  • VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
  • 239000000853 adhesive Substances 0.000 description 2
  • 230000001070 adhesive effect Effects 0.000 description 2
  • DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
  • 238000009413 insulation Methods 0.000 description 2
  • 239000007791 liquid phase Substances 0.000 description 2
  • 239000004065 semiconductor Substances 0.000 description 2
  • WUOACPNHFRMFPN-VIFPVBQESA-N (R)-(+)-alpha-terpineol Chemical compound CC1=CC[C@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-VIFPVBQESA-N 0.000 description 1
  • QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
  • RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
  • XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
  • QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
  • 235000013405 beer Nutrition 0.000 description 1
  • 239000007767 bonding agent Substances 0.000 description 1
  • 238000005219 brazing Methods 0.000 description 1
  • 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
  • 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
  • 150000001875 compounds Chemical class 0.000 description 1
  • 230000003247 decreasing effect Effects 0.000 description 1
  • 238000005516 engineering process Methods 0.000 description 1
  • 230000005496 eutectics Effects 0.000 description 1
  • 238000010304 firing Methods 0.000 description 1
  • 230000017525 heat dissipation Effects 0.000 description 1
  • 238000007654 immersion Methods 0.000 description 1
  • 239000012535 impurity Substances 0.000 description 1
  • 238000000691 measurement method Methods 0.000 description 1
  • 230000008018 melting Effects 0.000 description 1
  • 238000002844 melting Methods 0.000 description 1
  • 150000002739 metals Chemical class 0.000 description 1
  • 230000005012 migration Effects 0.000 description 1
  • 238000013508 migration Methods 0.000 description 1
  • 229910052750 molybdenum Inorganic materials 0.000 description 1
  • 229910052760 oxygen Inorganic materials 0.000 description 1
  • 239000001301 oxygen Substances 0.000 description 1
  • 239000011347 resin Substances 0.000 description 1
  • 229920005989 resin Polymers 0.000 description 1
  • 239000000377 silicon dioxide Substances 0.000 description 1
  • 239000011734 sodium Substances 0.000 description 1
  • 229910000679 solder Inorganic materials 0.000 description 1
  • 229910052721 tungsten Inorganic materials 0.000 description 1

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks

Landscapes

  • Conductive Materials (AREA)

Abstract

PURPOSE:To obtain conducting paste with high connecting strength for an AlN sintered body by adding a specific quantity of a carbide of group IA metal to the basic composition containing specific quantities of Ag powder, Pd powder and glass frit. CONSTITUTION:A carbide of group IA metal 0.1-10 pts.wt. is added to the basic composition of Ag powder 70-95 pts.wt., Pd powder 5-30 pts.wt. and glass frit 0.5-10 pts.wt. One or two kinds of LiCo3, NaCo3, KCO3, and LbCo3 are used for the carbide of group IA metal. A binder used for kneading is dispersed with an organic vehicle such as ethyl cellulose in an organic solvent such as alpha-tar pinol. The O2 in the carbide of group IA metal oxidizes the surface of an AlN sintered body substrate when a conducting pattern is sintered, and the wettability with Ag and Pd in conducting paste is improved, the reaction on the boundary face is accelerated, and connecting strength is improved.

Description

【発明の詳細な説明】[Detailed description of the invention] 【産業上の利用分野】[Industrial application field]

この発明は、窒化アルミニウム焼結体基板上に形成され
る導電パターン、電極等に用いられる導電ペーストに関
する。The present invention relates to a conductive paste used for conductive patterns, electrodes, etc. formed on a sintered aluminum nitride substrate.

【従来の技術】[Conventional technology]

従来から半導体装置の絶縁と放熱を兼ねた絶縁板として
、アルミナ（Ａ２□０．）焼結体基板が多用されてきた
。しかしながら最近の半導体装置の高出力化などの背景
から、熱伝導率の高い絶縁板が求められている。 窒化アルミニウム（ＡＩ２Ｎ）焼結体基板は、熱伝導率
が高く、２００Ｗ／−Ｋを越える高熱伝導率のものが実
用化されている。また窒化アルミニウムは、熱膨張係数
がＳｉに近いこと、絶縁特性が優れていることなど基板
材料として優れた面が多い。 しかし、この反面窒化アルミニウム焼結体基板は、いわ
ゆるぬれ性が悪く、また純度が高いので、液相反応を起
こし、接合強度向上に寄与するシリカ等の不純物を含ま
ないことと相まって、導電ペーストとの強固な接合が得
られないという欠点がある。 窒化アルミニウム焼結体基板の表面に、導電体を形成す
る手段としては、例えばＤＢＣ法と称されるＣｕ−０共
晶液相を利用してＣｕ箔を直接基板上へ張り付ける方法
。ペースト状のＷ、Ｍｏ等の高融点金属を焼結させる方
法。窒化アルミニウムと金属間にＴｉを添加したＡｇ−
Ｃｕ系のろう材を挿入して張り付ける方法などが試みら
れている。しかし、いずれの方法も焼結に高い温度を必
要としたり、工程が複雑であるなどの問題点があり、現
状の要求に十分に答えられる状態ではない。2. Description of the Related Art Conventionally, alumina (A2□0.) sintered substrates have been widely used as insulating plates for both insulation and heat dissipation in semiconductor devices. However, due to the recent trend toward higher output of semiconductor devices, there is a demand for insulating plates with high thermal conductivity. Aluminum nitride (AI2N) sintered substrates have high thermal conductivity, and those with high thermal conductivity exceeding 200 W/-K have been put into practical use. Furthermore, aluminum nitride has many advantages as a substrate material, such as a coefficient of thermal expansion close to that of Si and excellent insulation properties. However, on the other hand, aluminum nitride sintered substrates have poor wettability and high purity, so they do not contain impurities such as silica that cause liquid phase reactions and contribute to improving bonding strength. The disadvantage is that a strong bond cannot be obtained. As a means for forming a conductor on the surface of a sintered aluminum nitride substrate, for example, a method called DBC method, which utilizes a Cu-0 eutectic liquid phase, is used to directly attach a Cu foil onto the substrate. A method of sintering a paste-like high melting point metal such as W or Mo. Ag- with Ti added between aluminum nitride and metal
Attempts have been made to insert and paste a Cu-based brazing material. However, both methods have problems such as requiring high temperatures for sintering and complicated processes, and are not in a state where they can fully meet current demands.

【発明が解決しようとする課題】[Problem to be solved by the invention]

この発明は、従来からアルミナ用として用いられている
導電ペーストを基本組成とし、これに接合助剤を添加す
ることで、窒化アルミニウム焼結体基板に対しても十分
な接合強度が得られる導電ペーストを得ることを目的と
している。This invention uses a conductive paste conventionally used for alumina as its basic composition, and by adding a bonding agent to this, the conductive paste can provide sufficient bonding strength even to aluminum nitride sintered substrates. The purpose is to obtain.

【課題を解決するための手段】[Means to solve the problem]

この発明の導電ペーストは、Ａｇ粉末７０〜９５重量部
、Ｐｄ粉末５〜３０重量部、ガラスフリット０５〜ｌＯ
重量部の範囲の組成からなる基礎組成に対し、ＩＡ属金
属の炭酸化物を０．１〜１０重量部の範囲で添加したこ
とを特徴としている。 更にこの発明では、ＩＡ属金属の炭酸化物として、炭酸
リチウム（ＬｉＺＣＯｌ）、炭酸ナトリウム（Ｎ　ａ　
ｚ　ＣＯ＝　）　、炭酸カリウム（ＫｚＣｏ。 ）、炭酸ルビジウム（Ｒｂ２ＣＯ３）の中から選択され
た何れか一種もしくは二種以上を添加することも特徴と
している。 すなわちこの発明によれば、導電ペーストの基本組成と
してＡｇ粉末、Ｐｄ粉末およびガラスフリ、トの混合物
を基礎組成とし、これにＩＡｒＦＡ金属の炭酸化物を接
合助剤として添加することにより、この発明の目的を達
成している。 基礎組成の好ましい範囲とし７ては、Ａｇ粉末が７０な
いし９５重量部、Ｐｄ粉末を５ないＬ３０重量部、ガラ
スフリットを０．５ないし１０重量部の範囲一で選択し
た組成比のものを用いれば好適である。 このような組成とすることは、Ａｇ粉末が多過ぎるとマ
イグレーションや半田浸漬性が悪くなる。 またＰｄが多過ぎると導体の抵抗イーの増加や１′［１
１のぬれ性が悪くなる。またガラスフリソ１〜について
も量が多くなると、窒化アルミニウム焼結体との反応が
激しくなり、ペーストの特性が不安定乙こなるなどの理
由による。 この基礎組成に対し、この発明ではＩＡ属金属の炭酸化
物を０．１重量部から１０重量部の範囲で添加して用い
ればよい。 また混練に用いるバインダーについては、既知のものを
用いることができるが、具体例を例示するとα−ターピ
ノール、ジブチルフタレート、ブチルカルピトールアセ
テートなどの有機溶媒中にエチルセルロース、アルキン
ド樹脂などの有機ビヒクルを分散させたものなどが挙げ
られる。The conductive paste of this invention includes 70 to 95 parts by weight of Ag powder, 5 to 30 parts by weight of Pd powder, and 05 to 10 parts of glass frit.
It is characterized in that a group IA metal carbonate is added in an amount of 0.1 to 10 parts by weight to a basic composition consisting of a composition in a range of 0.1 to 10 parts by weight. Furthermore, in this invention, lithium carbonate (LiZCOl), sodium carbonate (Na
It is also characterized by the addition of one or more selected from among zCO= ), potassium carbonate (KzCo.), and rubidium carbonate (Rb2CO3). That is, according to the present invention, the basic composition of the conductive paste is a mixture of Ag powder, Pd powder, and glass frit, and by adding IArFA metal carbonate as a bonding aid, the object of the present invention can be achieved. has been achieved. A preferred range of the basic composition is 70 to 95 parts by weight of Ag powder, 5 to 30 parts by weight of Pd powder, and 0.5 to 10 parts by weight of glass frit. It is suitable if With such a composition, if too much Ag powder is used, migration and solder immersion properties will deteriorate. Also, if there is too much Pd, the resistance E of the conductor increases and 1'[1
The wettability of No. 1 deteriorates. Further, if the amount of glass fris 1 to 1 is increased, the reaction with the aluminum nitride sintered body becomes intense, and the properties of the paste become unstable. In the present invention, a group IA metal carbonate may be added in an amount of 0.1 to 10 parts by weight to this basic composition. As for the binder used for kneading, known binders can be used. To give specific examples, an organic vehicle such as ethyl cellulose or alkynd resin is dispersed in an organic solvent such as α-terpinol, dibutyl phthalate, or butyl carpitol acetate. Examples include things that were made.

【作　　　用］ この発明によれば、導電ペースト中に添加されたＩＡ属金属の炭酸化物が、導電パターンの焼成時に炭酸化物中の酸素が窒化アルミニウム焼結体基板の表面を酸化し、この結果導電ペースト中のＡｇ、Ｐｄ金属分とのぬれ性が良くなり界面での反応が促進され、接合強度が向上するものと思われる。 【実　施　例】[For production] According to the present invention, the carbonate of the group IA metal added to the conductive paste causes oxygen in the carbonate to oxidize the surface of the aluminum nitride sintered body substrate during firing of the conductive pattern, and as a result, the It is thought that wettability with Ag and Pd metal components improves, reaction at the interface is promoted, and bonding strength is improved. 【Example】

以下実施例に基づいて、この発明の詳細な説明する。 まず、導電ペーストの基礎組成として、Ａ　ｇ粉末８５
重量部、Ｐｄ粉末１５重量部、ガラスフリソ１〜５重量
部からなる混合物を作成し、これに以下の表に示す４つ
の炭酸化物粉末を添加量を変えて添加し、バインダーと
共に混練してペーストを作成した。 この各種ペーストをスクリーン印刷によって窒化アルミ
ニウム焼結体基板」二に２閤角のパターンを印刷し、レ
ベリング後、１２０°Ｃで乾燥させ、その後焼結炉で９
００°Ｃ，１０分間で焼結させた。 接合強度の測定は、いわゆるビール（引っ張り）強度測
定法に従った。焼結した２　ｍｍ角の導電ペーストパタ
ーン上に線径０　、８　ｍｍのネイルヘントビンを半田
付けし、これを基板に対して垂直方向に引っ張り、剥が
れる強さを測定した。この結果を以下の表に示す。 なお表中の添加量の単位は（重計部）、接合強度の単位
は（ｋｇ／４ｍ＋ｎ”　）である。 −表一 この結果かられかるように、ＩＡ属金属の炭酸化物を全
く添加しない場合の接着強度は低く、ＩＡ属金属の炭酸
化物を添加した場合であっても、添加量が００１重量部
未満の場合には、添加の効果が全くないか殆ど得られな
い。また添加量が１０重量部を越えると、接着強度は低
下することが認められた。 この結果から、添加量として好ましい範囲は、いずれの
添加物についてもＯ８１重量部から１０重量部であった
。 またこの実施例では、添加物を単独で添加したが、これ
らの添加物は二種以上を混合して添加してもよい。更に
この実施例で挙げた以外のＩＡｆｉＡ素化物であっても
、同様の効果が得られる。The present invention will be described in detail below based on examples. First, as the basic composition of the conductive paste, Ag powder 85
A mixture consisting of 15 parts by weight of Pd powder, and 1 to 5 parts by weight of glass friso was prepared, and to this was added the four carbonate powders shown in the table below in varying amounts, and the mixture was kneaded with a binder to form a paste. Created. These various pastes were screen-printed onto aluminum nitride sintered substrates to form a pattern with two angles, and after leveling, they were dried at 120°C, and then placed in a sintering furnace for 90°C.
It was sintered at 00°C for 10 minutes. The bonding strength was measured according to the so-called Beer (tensile) strength measurement method. A nail binder with a wire diameter of 0.8 mm was soldered onto a sintered 2 mm square conductive paste pattern, and the strength with which it could be peeled off was measured by pulling it in a direction perpendicular to the substrate. The results are shown in the table below. In addition, the unit of addition amount in the table is (gravimetric part), and the unit of joint strength is (kg/4m+n''). - Table 1 As can be seen from the results, no carbonates of group IA metals are added. Even if a group IA metal carbonate is added, if the amount added is less than 0.001 parts by weight, there will be no or almost no effect of the addition. It was observed that the adhesive strength decreased when the amount exceeded 10 parts by weight. From this result, the preferred range for the amount added was 1 to 10 parts by weight of O8 for all additives. Also, this example In this example, additives were added alone, but these additives may be added as a mixture of two or more types.Furthermore, even with IAfiA compounds other than those mentioned in this example, similar effects can be obtained. can get.

【発明の効果】【Effect of the invention】

以上述べたようにこの発明によれば、窒化アルミニウム
焼結体基板用の導電ペーストとして、高い接着強度が得
られる。 また基礎組成の導電ペーストは、アルミナ基４かへの流
用も可能であり、添加剤の配合のみによって、各種の絶
縁基板への適用が可能なため、製造現場においてペース
トの種類を少なくでき、生産効率が良くなる。As described above, according to the present invention, high adhesive strength can be obtained as a conductive paste for a sintered aluminum nitride substrate. In addition, the conductive paste with the basic composition can also be used for alumina-based materials, and can be applied to various insulating substrates just by adding additives, so the number of types of paste can be reduced at the manufacturing site, reducing production. Improved efficiency.

Claims (2)

【特許請求の範囲】[Claims] （１）Ａｇ粉末７０〜９５重量部、Ｐｄ粉末５〜３０重
量部、ガラスフリット０．５〜１０重量部の範囲の組成
からなる基礎組成に対し、ＩＡ属金属の炭酸化物を０．
１〜１０重量部の範囲で添加したことを特徴とする窒化
アルミニウム焼結体用導電ペースト。(1) For a basic composition consisting of 70 to 95 parts by weight of Ag powder, 5 to 30 parts by weight of Pd powder, and 0.5 to 10 parts by weight of glass frit, 0.5 parts of carbonate of group IA metal is added.
A conductive paste for an aluminum nitride sintered body, characterized in that the paste is added in an amount of 1 to 10 parts by weight. （２）ＩＡ属金属の炭酸化物が、炭酸リチウム、炭酸ナ
トリウム、炭酸カリウム、炭酸ルビジウムのいずれかか
ら選択された一種もしくは二種以上であるところの請求
項１記載の窒化アルミニウム焼結体用導電ペースト。(2) The conductive material for an aluminum nitride sintered body according to claim 1, wherein the carbonate of the Group IA metal is one or more selected from lithium carbonate, sodium carbonate, potassium carbonate, and rubidium carbonate. paste.

JP18307589A 1989-07-15 1989-07-15 Conducting paste for aluminum nitride sintered body Pending JPH0349107A (en)

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JP18307589A JPH0349107A (en) 1989-07-15 1989-07-15 Conducting paste for aluminum nitride sintered body

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Application Number Priority Date Filing Date Title
JP18307589A JPH0349107A (en) 1989-07-15 1989-07-15 Conducting paste for aluminum nitride sintered body

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JPH0349107A true JPH0349107A (en) 1991-03-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293331A (en) * 1992-06-01 1994-03-08 National Semiconductor Corporation High density EEPROM cell with tunnel oxide stripe
KR100685680B1 (en) * 1998-12-10 2007-02-23 가부시키가이샤 고마쓰 세이사쿠쇼 Air Conditioning Equipment of Construction Machinery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293331A (en) * 1992-06-01 1994-03-08 National Semiconductor Corporation High density EEPROM cell with tunnel oxide stripe
KR100685680B1 (en) * 1998-12-10 2007-02-23 가부시키가이샤 고마쓰 세이사쿠쇼 Air Conditioning Equipment of Construction Machinery

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