patents.google.com

JPS53105366A - Manufacture for semiconductor element substrate - Google Patents

  • ️Wed Sep 13 1978

JPS53105366A - Manufacture for semiconductor element substrate - Google Patents

Manufacture for semiconductor element substrate

Info

Publication number
JPS53105366A
JPS53105366A JP1924677A JP1924677A JPS53105366A JP S53105366 A JPS53105366 A JP S53105366A JP 1924677 A JP1924677 A JP 1924677A JP 1924677 A JP1924677 A JP 1924677A JP S53105366 A JPS53105366 A JP S53105366A Authority
JP
Japan
Prior art keywords
manufacture
semiconductor element
element substrate
substrate
crystal
Prior art date
1977-02-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1924677A
Other languages
Japanese (ja)
Inventor
Koji Kozuka
Satoyoshi Kuroda
Masatoshi Matsuda
Masatake Kishino
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1977-02-25
Filing date
1977-02-25
Publication date
1978-09-13
1977-02-25 Application filed by Hitachi Ltd filed Critical Hitachi Ltd
1977-02-25 Priority to JP1924677A priority Critical patent/JPS53105366A/en
1978-09-13 Publication of JPS53105366A publication Critical patent/JPS53105366A/en
Status Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To manufacture the substrate crystal of high quality, by moving the substrate which forms no compound or solid solution with the semicondcutor crystal in melting condition and is coated with harmless metal of low melting point, in a given speed.

COPYRIGHT: (C)1978,JPO&Japio

JP1924677A 1977-02-25 1977-02-25 Manufacture for semiconductor element substrate Pending JPS53105366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1924677A JPS53105366A (en) 1977-02-25 1977-02-25 Manufacture for semiconductor element substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1924677A JPS53105366A (en) 1977-02-25 1977-02-25 Manufacture for semiconductor element substrate

Publications (1)

Publication Number Publication Date
JPS53105366A true JPS53105366A (en) 1978-09-13

Family

ID=11994043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1924677A Pending JPS53105366A (en) 1977-02-25 1977-02-25 Manufacture for semiconductor element substrate

Country Status (1)

Country Link
JP (1) JPS53105366A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162422A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Substrate temperature adjusting device
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS57162328A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Isolation valve
JPS583223A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS59177922A (en) * 1983-03-14 1984-10-08 エナージー・コンバーション・デバイセス・インコーポレーテッド Process gas introducing and feeding system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162422A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Substrate temperature adjusting device
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS57162328A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Isolation valve
JPH02216819A (en) * 1981-03-16 1990-08-29 Energy Conversion Devices Inc Separation valve
JPH02127028U (en) * 1981-03-16 1990-10-19
JPH0429559Y2 (en) * 1981-03-16 1992-07-17
JPS583223A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS59177922A (en) * 1983-03-14 1984-10-08 エナージー・コンバーション・デバイセス・インコーポレーテッド Process gas introducing and feeding system

Similar Documents

Publication Publication Date Title
JPS53105366A (en) 1978-09-13 Manufacture for semiconductor element substrate
JPS548462A (en) 1979-01-22 Manufacture for semiconductor
JPS5380985A (en) 1978-07-17 Semiconductor device
JPS52140269A (en) 1977-11-22 Formation of solder electrode
JPS5321570A (en) 1978-02-28 Bonding method of semiconductor substrates
JPS53104161A (en) 1978-09-11 Crystal growth method
JPS5267271A (en) 1977-06-03 Formation of through-hole onto semiconductor substrate
JPS5351964A (en) 1978-05-11 Selective growth method for semiconductor crystal
JPS5310266A (en) 1978-01-30 Production of soldred semiconductor wafers
JPS52141565A (en) 1977-11-25 Manufacture of semiconductor unit
JPS53114674A (en) 1978-10-06 Manufacture for compound semiconductor device
JPS5239373A (en) 1977-03-26 Dam for prevention of flowing of solder material
JPS5375771A (en) 1978-07-05 Manufacture for semiconductor device
JPS51138164A (en) 1976-11-29 Production method of package for semiconductor circuit element
JPS53104159A (en) 1978-09-11 Impurity diffusing method
JPS54873A (en) 1979-01-06 Manufacture of semiconductor device
JPS53142168A (en) 1978-12-11 Reproductive use of semiconductor substrate
JPS52106680A (en) 1977-09-07 Surface stabilized semiconductor element
JPS52155972A (en) 1977-12-24 Production of semiconductor device
JPS5332899A (en) 1978-03-28 Production of ferrite single crystal
JPS5399767A (en) 1978-08-31 Semic0nductor element of iii-v group compound
JPS53135267A (en) 1978-11-25 Production of semiconductor device
JPS53141590A (en) 1978-12-09 Manufacture of semiconductor device
JPS52144272A (en) 1977-12-01 Forming method of electrode in semiconductor device
JPS54101661A (en) 1979-08-10 Ingot for single crystal substrate