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JPS5612787A - Matrix indicator by light emitting diode and manufacture therefor - Google Patents

  • ️Sat Feb 07 1981

JPS5612787A - Matrix indicator by light emitting diode and manufacture therefor - Google Patents

Matrix indicator by light emitting diode and manufacture therefor

Info

Publication number
JPS5612787A
JPS5612787A JP8710079A JP8710079A JPS5612787A JP S5612787 A JPS5612787 A JP S5612787A JP 8710079 A JP8710079 A JP 8710079A JP 8710079 A JP8710079 A JP 8710079A JP S5612787 A JPS5612787 A JP S5612787A Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
evaporation
layers
matrix indicator
Prior art date
1979-07-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8710079A
Other languages
Japanese (ja)
Inventor
Tomio Nakaya
Masaki Kajita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1979-07-10
Filing date
1979-07-10
Publication date
1981-02-07
1979-07-10 Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
1979-07-10 Priority to JP8710079A priority Critical patent/JPS5612787A/en
1981-02-07 Publication of JPS5612787A publication Critical patent/JPS5612787A/en
Status Pending legal-status Critical Current

Links

  • 238000004519 manufacturing process Methods 0.000 title 1
  • 239000011159 matrix material Substances 0.000 title 1
  • 238000001704 evaporation Methods 0.000 abstract 3
  • 230000008020 evaporation Effects 0.000 abstract 3
  • 238000002955 isolation Methods 0.000 abstract 2
  • HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
  • 238000009792 diffusion process Methods 0.000 abstract 1
  • 238000005121 nitriding Methods 0.000 abstract 1
  • 239000004065 semiconductor Substances 0.000 abstract 1
  • 239000000758 substrate Substances 0.000 abstract 1
  • 239000011701 zinc Substances 0.000 abstract 1
  • 229910052725 zinc Inorganic materials 0.000 abstract 1

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To simplify wiring work and connection work by forming plural light emitting diodes by selective diffusion wherein line electrodes and row electrodes separated by insulating layers are formed on the surface by evaporation. CONSTITUTION:Dotted light emitting diodes 2 which formed plural P layers by selectively diffusing zinc or the like, for example, are formed on a semiconductor substrate 1. Each light emitting diode 2 is arranged by electrically separating by isolation layers 4. A nitriding films 3 are formed on the isolation layers 4. Then, row electrodes 5 are formed in a straight line by evaporation or the like. Line electrodes 6 are also formed in a straight line through oxide films 7 by evaporation or the like.

JP8710079A 1979-07-10 1979-07-10 Matrix indicator by light emitting diode and manufacture therefor Pending JPS5612787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8710079A JPS5612787A (en) 1979-07-10 1979-07-10 Matrix indicator by light emitting diode and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8710079A JPS5612787A (en) 1979-07-10 1979-07-10 Matrix indicator by light emitting diode and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS5612787A true JPS5612787A (en) 1981-02-07

Family

ID=13905521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8710079A Pending JPS5612787A (en) 1979-07-10 1979-07-10 Matrix indicator by light emitting diode and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5612787A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184988A (en) * 1982-04-02 1983-10-28 ジャン　ポラール Electro-optic image display
JP2014522126A (en) * 2011-08-08 2014-08-28 イルジン エルイーディー カンパニー リミテッド Nitride semiconductor light emitting device having excellent leakage current blocking effect and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184988A (en) * 1982-04-02 1983-10-28 ジャン　ポラール Electro-optic image display
JP2014522126A (en) * 2011-08-08 2014-08-28 イルジン エルイーディー カンパニー リミテッド Nitride semiconductor light emitting device having excellent leakage current blocking effect and method for manufacturing the same

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