patents.google.com

JPS5730385A - Semiconductor light emitting element - Google Patents

  • ️Thu Feb 18 1982

JPS5730385A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS5730385A
JPS5730385A JP10416080A JP10416080A JPS5730385A JP S5730385 A JPS5730385 A JP S5730385A JP 10416080 A JP10416080 A JP 10416080A JP 10416080 A JP10416080 A JP 10416080A JP S5730385 A JPS5730385 A JP S5730385A Authority
JP
Japan
Prior art keywords
light emitting
layer
forming
semiconductor
bias electrode
Prior art date
1980-07-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10416080A
Other languages
Japanese (ja)
Inventor
Tatsuyuki Sanada
Osamu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1980-07-29
Filing date
1980-07-29
Publication date
1982-02-18
1980-07-29 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
1980-07-29 Priority to JP10416080A priority Critical patent/JPS5730385A/en
1982-02-18 Publication of JPS5730385A publication Critical patent/JPS5730385A/en
Status Pending legal-status Critical Current

Links

  • 239000004065 semiconductor Substances 0.000 title abstract 6
  • 239000000758 substrate Substances 0.000 abstract 4
  • 239000012535 impurity Substances 0.000 abstract 3
  • 239000013078 crystal Substances 0.000 abstract 2
  • 230000010354 integration Effects 0.000 abstract 2

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase the integration of a semiconductor light emitting element by forming a light emitting part on a semiconductor substrate having a bias electrode on the lower surface, forming an FET layer via an insulating layer having a grooved hole, and then forming a control electrode and other bias electrode. CONSTITUTION:Light emitting parts 12, 13, 15 forming a light emitting p-n junction 14 are formed on a semiconductor substrate 11 having a bias electrode 19 on the lower surface. After an FET layer 18 is formed via an insulating layer 16 having a grooved hole 17, a control electrode 21 and other bias electrode 20 are formed. A substrate 11 has one conductive type impurity, and a light emitting part is formed with the single crystal layer of the semiconductor containing the same conductive type impurity as the substrate as the lowermost layer. An FET layer is formed of signal crystal containing the same conductive type impurity as the semiconductor of the uppermost layer. Thus, the light signal is controlled directly, the integration is increased, and the reliability is improved.

JP10416080A 1980-07-29 1980-07-29 Semiconductor light emitting element Pending JPS5730385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10416080A JPS5730385A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10416080A JPS5730385A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5730385A true JPS5730385A (en) 1982-02-18

Family

ID=14373304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416080A Pending JPS5730385A (en) 1980-07-29 1980-07-29 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5730385A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067566A2 (en) * 1981-06-13 1982-12-22 Plessey Overseas Limited Integrated light detection or generation means and amplifying means
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS60140776A (en) * 1983-12-27 1985-07-25 Nec Corp Semiconductor laser triode
JPS6170782A (en) * 1984-09-14 1986-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS61101090A (en) * 1984-10-24 1986-05-19 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS61218194A (en) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5144377A (en) * 1991-04-04 1992-09-01 University Of Delaware High-speed heterojunction light-emitting diode
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210082A (en) * 1975-07-14 1977-01-26 Mitsubishi Electric Corp Semiconductor device
JPS52147087A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor light emitting display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210082A (en) * 1975-07-14 1977-01-26 Mitsubishi Electric Corp Semiconductor device
JPS52147087A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor light emitting display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0067566A2 (en) * 1981-06-13 1982-12-22 Plessey Overseas Limited Integrated light detection or generation means and amplifying means
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS60140776A (en) * 1983-12-27 1985-07-25 Nec Corp Semiconductor laser triode
JPS6170782A (en) * 1984-09-14 1986-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS61101090A (en) * 1984-10-24 1986-05-19 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS61218194A (en) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5100833A (en) * 1987-08-05 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5144377A (en) * 1991-04-04 1992-09-01 University Of Delaware High-speed heterojunction light-emitting diode

Similar Documents

Publication Publication Date Title
JPS5710992A (en) 1982-01-20 Semiconductor device and manufacture therefor
JPS5730385A (en) 1982-02-18 Semiconductor light emitting element
JPS5730384A (en) 1982-02-18 Semiconductor light emitting element
JPS5730386A (en) 1982-02-18 Semiconductor light emitting element
JPS57106084A (en) 1982-07-01 Amorphous silicon diode
JPS53118375A (en) 1978-10-16 Manufacture of semiconductor device
JPS5739571A (en) 1982-03-04 Constant current diode
JPS56112767A (en) 1981-09-05 Light emitting semiconductor device
JPS57191539A (en) 1982-11-25 Semiconductor ion sensor
JPS566480A (en) 1981-01-23 Semiconductor light emitting diode
JPS5575264A (en) 1980-06-06 Charge transfer element
JPS5543864A (en) 1980-03-27 Mis semiconductor device
JPS572519A (en) 1982-01-07 Manufacture of semiconductor device
JPS5779685A (en) 1982-05-18 Light emitting diode device
JPS5772373A (en) 1982-05-06 Semiconductor device
JPS6457631A (en) 1989-03-03 Tape carrier tape and manufacture thereof
JPS56114367A (en) 1981-09-08 Semiconductor device
JPS5730394A (en) 1982-02-18 Semiconductor light emitting device and manufacture thereof
JPS55145380A (en) 1980-11-12 Semiconductor photo coupler device
JPS5791557A (en) 1982-06-07 Manufacture of infrared ray detector
JPS5796586A (en) 1982-06-15 Manufacture of mesa striped semiconductor laser
JPS52104072A (en) 1977-09-01 High voltage semiconductor device
JPS5769784A (en) 1982-04-28 Manufacture of semiconductor light emitting device
JPS57211782A (en) 1982-12-25 Semiconductor device
JPS57134965A (en) 1982-08-20 Semiconductor device