JPS628937B2 - - Google Patents
- ️Wed Feb 25 1987
Info
-
Publication number
- JPS628937B2 JPS628937B2 JP54009697A JP969779A JPS628937B2 JP S628937 B2 JPS628937 B2 JP S628937B2 JP 54009697 A JP54009697 A JP 54009697A JP 969779 A JP969779 A JP 969779A JP S628937 B2 JPS628937 B2 JP S628937B2 Authority
- JP
- Japan Prior art keywords
- ink
- curing
- semiconductor wafer
- probing
- heating Prior art date
- 1979-02-01 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000001723 curing Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Printing Methods (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
この発明は半導体ウエーハ用プロービングイン
クの硬化方法にかかり、特に紫外線感光型の半導
体ウエーハ用プロービングインクの硬化方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of curing a probing ink for semiconductor wafers, and more particularly to a method of curing an ultraviolet-sensitive probing ink for semiconductor wafers.
半導体素子の製造においてその電気的特性をあ
る設定値によつて判定ないし選択するために、特
性測定時にインクづけが施されている。そしてイ
ンクづけを施したのち、ブレードダイサにて各々
のチツプに割断し、インクづけされたチツプを除
去する。上記において、ブレードダイサはダイシ
ングにあたり多量の純水を用いるためインクは水
性のものでは消去されて目的が達せられない。し
たがつてインクは非水溶性にしてプローブされな
いチツプにも悪影響を与えない材質のものに限定
される。この目的に適するインクとして紫外線感
光硬化インク（以降UVインクと称する）が多く
用いられている。 In the manufacture of semiconductor devices, inking is applied when measuring the characteristics in order to determine or select the electrical characteristics based on certain set values. After inking, the chips are cut into individual chips using a blade dicer, and the inked chips are removed. In the above, the blade dicer uses a large amount of pure water for dicing, so if the ink is water-based, it will be erased and the purpose will not be achieved. Therefore, the ink is limited to materials that are water-insoluble and do not adversely affect chips that are not probed. Ultraviolet photocurable ink (hereinafter referred to as UV ink) is often used as an ink suitable for this purpose.
UVインクの硬化乾燥は流動体に200〜400ｍμ
範囲の紫外光を照射して生ずる光重合反応により
達成される。これに用いられる乾燥機は上記硬化
に好適する如く、半導体ウエーハ１に塗着された
UVインク層２に対しこの上方に水銀ランプ３を
配置してなり、所定の時間加熱を施すものであ
る。かかる装置によるインクの硬化は第２図に示
す如く、UVインク層２に対し表層より生じ時間
の経過とともに内部に向け（図中矢印方向に）進
行することが判明した。これにより半導体ウエー
ハとインクとの接着部が最も硬化が遅れ接着力が
低く、ウエーハセパレーシヨン工程における熱
的、機械的シヨツクによつて剥離するに至るとい
う重大な欠点がある。 Curing and drying of UV ink is 200 to 400 mμ in fluid.
This is accomplished by a photopolymerization reaction that occurs upon irradiation with ultraviolet light in the range. The dryer used for this is suitable for curing the semiconductor wafer 1.
A mercury lamp 3 is placed above the UV ink layer 2 to heat it for a predetermined period of time. As shown in FIG. 2, it was found that ink curing by such an apparatus occurs from the surface of the UV ink layer 2 and progresses inward (in the direction of the arrow in the figure) as time passes. This has the serious drawback that the bond between the semiconductor wafer and the ink is the slowest to cure and has low adhesive strength, leading to peeling due to thermal or mechanical shock in the wafer separation process.
この発明は上記従来の欠点に対し、これを改良
する半導体ウエーハ用プロービングインクの硬化
方法を提供するものである。 The present invention provides a method for curing probing ink for semiconductor wafers that overcomes the above-mentioned conventional drawbacks.
この発明にかかる半導体ウエーハ用プロービン
グインクの硬化方法は、半導体ウエーハの表面に
紫外線硬化型のプロービングインクを塗着したの
ち、前記半導体ウエーハを介して加熱を施しなが
ら紫外線を照射しプロービングインクを硬化させ
るものである。以下、この発明の一実施例につき
詳細に説明する。 The method for curing probing ink for semiconductor wafers according to the present invention includes applying ultraviolet curable probing ink to the surface of a semiconductor wafer, and then irradiating ultraviolet rays while heating through the semiconductor wafer to cure the probing ink. It is something. Hereinafter, one embodiment of the present invention will be described in detail.
第３図は硬化に使用するブロツクヒータ４の表
面に選択的にUVインク層２，２′………が塗着さ
れた半導体ウエーハ１，１′………を載置した状
態を示す斜視図である。前記ブロツクヒータは加
熱面の均熱性の良好な、一例として±10℃以内に
なるものとする。また、UVインクは「ダイ・キ
ユア」（商品名、大日本インク化学工業K.K.製
「Daicure」（UV Curering Ink：Green）を用い
た。次に、第４図はUVインク層に対する加熱状
況を示す概略の断面図である。同図において破線
矢印は熱の伝達方向を類推表示するもので、UV
インク層２は半導体ウエーハ１を介して加熱され
るため硬化は半導体ウエーハとの接着側から進行
する。このため、UVインク層の接着性がきわめ
てすぐれたものであり、これは第５図に示される
接着強度の分布図に明らかである。この図におい
て分布Ａは従来方法によるもの、分布Ｂはこの発
明の一実施例方法によるものを夫々示す。 FIG. 3 is a perspective view showing a state in which semiconductor wafers 1, 1', on which UV ink layers 2, 2', etc. are selectively applied, are placed on the surface of a block heater 4 used for curing. It is. The block heater has a heating surface with good uniformity of temperature, for example, within ±10°C. In addition, the UV ink used was "Daicure" (product name, "Daicure" (UV Curing Ink: Green) manufactured by Dainippon Ink Chemical Industry KK).Next, Figure 4 shows the heating situation for the UV ink layer. This is a schematic cross-sectional view. In the same figure, the dashed arrow indicates the direction of heat transfer by analogy, and UV
Since the ink layer 2 is heated through the semiconductor wafer 1, curing proceeds from the side that is bonded to the semiconductor wafer. Therefore, the adhesiveness of the UV ink layer is extremely excellent, and this is clear from the adhesive strength distribution diagram shown in FIG. In this figure, distribution A shows the result by the conventional method, and distribution B shows the result by the method of one embodiment of the present invention.
上記ヒータのみによる加熱の場合、温度は180
゜±10℃、半導体ウエーハの表面温度にて150゜
〜200℃、加熱時間30分〜60分にて接着性、耐薬
品性、耐水性等において充分すぐれた性能を示
す。なお、硬化のための加熱不足では接着性、耐
薬品性、耐水性等がわるく、加熱過度では変質す
る。 When heating only with the above heater, the temperature is 180
It shows sufficiently excellent performance in terms of adhesion, chemical resistance, water resistance, etc. at a temperature of 150° to 200°C at a semiconductor wafer surface temperature of 30 to 60 minutes. Insufficient heating for curing will result in poor adhesion, chemical resistance, water resistance, etc., and excessive heating will cause deterioration.
なお、上記加熱硬化は紫外線照射を併用しても
硬化時間の短縮等の効果がある。 Note that the heat curing described above has the effect of shortening the curing time even if ultraviolet irradiation is used in combination.
さらに、この発明は実施が容易である利点もあ
る。 Furthermore, the invention has the advantage of being easy to implement.
第１図は従来の方法を説明するための側面断面
図、第２図は従来方法によるUVインク層の硬化
を説明するための断面図、第３図はこの発明方法
の一実施例を示す斜視図、第４図はこの発明方法
によるUVインク層の硬化を説明するための断面
図、第５図はこの発明の効果の一部の接着性を示
す分布図である。なお、図中同一符号は同一また
は相当部分を夫々示すものとする。
１，１′……半導体ウエーハ、２，２′……UV
インク層、４……ブロツクヒータ。
Fig. 1 is a side cross-sectional view for explaining the conventional method, Fig. 2 is a cross-sectional view for explaining curing of the UV ink layer by the conventional method, and Fig. 3 is a perspective view showing an example of the method of the present invention. FIG. 4 is a cross-sectional view for explaining the curing of the UV ink layer by the method of this invention, and FIG. 5 is a distribution diagram showing adhesiveness, which is part of the effects of this invention. Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively. 1, 1'...Semiconductor wafer, 2, 2'...UV
Ink layer, 4...Block heater.
Claims (1)
【特許請求の範囲】[Claims]
１ 半導体ウエーハの表面に紫外線硬化型のプロ
ービングインクを塗着したのち、前記半導体ウエ
ーハを介して加熱を施しながら紫外線を照射し、
プロービングインクを硬化させるプロービングイ
ンクの硬化方法。1 After applying an ultraviolet curable probing ink to the surface of a semiconductor wafer, irradiating ultraviolet rays while heating through the semiconductor wafer,
A probing ink curing method for curing probing ink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP969779A JPS55103736A (en) | 1979-02-01 | 1979-02-01 | Hardening method of proving ink for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP969779A JPS55103736A (en) | 1979-02-01 | 1979-02-01 | Hardening method of proving ink for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55103736A JPS55103736A (en) | 1980-08-08 |
| JPS628937B2 true JPS628937B2 (en) | 1987-02-25 |
Family
ID=11727410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP969779A Granted JPS55103736A (en) | 1979-02-01 | 1979-02-01 | Hardening method of proving ink for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55103736A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2623916A (en) * | 2021-08-05 | 2024-05-01 | Sekisui Kydex Llc | Systems and methods for an enclosed dye sublimation apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224637A (en) * | 1985-07-24 | 1987-02-02 | Matsushita Electronics Corp | Wafer making |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225576A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Exposure method of photo-resist |
| JPS5277671A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Method and equipment of masking |
| JPS52137267A (en) * | 1976-05-12 | 1977-11-16 | Hitachi Ltd | Sorting method for transistors and its device |
| JPS543473A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1979
- 1979-02-01 JP JP969779A patent/JPS55103736A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225576A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Exposure method of photo-resist |
| JPS5277671A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Method and equipment of masking |
| JPS52137267A (en) * | 1976-05-12 | 1977-11-16 | Hitachi Ltd | Sorting method for transistors and its device |
| JPS543473A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2623916A (en) * | 2021-08-05 | 2024-05-01 | Sekisui Kydex Llc | Systems and methods for an enclosed dye sublimation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55103736A (en) | 1980-08-08 |
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