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SG116475A1 - Bonded soi wafer with <100> device layer and <110>substrate for performance improvement. - Google Patents

  • ️Mon Nov 28 2005
Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Info

Publication number
SG116475A1
SG116475A1 SG200300325A SG200300325A SG116475A1 SG 116475 A1 SG116475 A1 SG 116475A1 SG 200300325 A SG200300325 A SG 200300325A SG 200300325 A SG200300325 A SG 200300325A SG 116475 A1 SG116475 A1 SG 116475A1 Authority
SG
Singapore
Prior art keywords
substrate
device layer
soi wafer
performance improvement
bonded soi
Prior art date
2002-02-05
Application number
SG200300325A
Inventor
Chen Haur-Ywh
Chan Yi-Ling
Yang Kuo-Nan
Yang Fu-Liang
Hu Chen-Ming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
2002-02-05
Filing date
2003-02-05
Publication date
2005-11-28
2002-02-05 Priority claimed from TW91102030A external-priority patent/TW543150B/en
2003-01-31 Priority claimed from US10/355,872 external-priority patent/US6784071B2/en
2003-02-05 Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
2005-11-28 Publication of SG116475A1 publication Critical patent/SG116475A1/en

Links

  • 239000000758 substrate Substances 0.000 title 1
SG200300325A 2002-02-05 2003-02-05 Bonded soi wafer with <100> device layer and <110>substrate for performance improvement. SG116475A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91102030A TW543150B (en) 2002-02-05 2002-02-05 Structure of bonded wafer
US10/355,872 US6784071B2 (en) 2003-01-31 2003-01-31 Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement

Publications (1)

Publication Number Publication Date
SG116475A1 true SG116475A1 (en) 2005-11-28

Family

ID=35542878

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300325A SG116475A1 (en) 2002-02-05 2003-02-05 Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Country Status (1)

Country Link
SG (1) SG116475A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device

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