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TW202227887A - Backlight device - Google Patents

  • ️Sat Jul 16 2022

TW202227887A - Backlight device - Google Patents

Backlight device Download PDF

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Publication number
TW202227887A
TW202227887A TW110101251A TW110101251A TW202227887A TW 202227887 A TW202227887 A TW 202227887A TW 110101251 A TW110101251 A TW 110101251A TW 110101251 A TW110101251 A TW 110101251A TW 202227887 A TW202227887 A TW 202227887A Authority
TW
Taiwan
Prior art keywords
light
structures
millimeters
pyramid
backlight device
Prior art date
2021-01-13
Application number
TW110101251A
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Chinese (zh)
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TWI747710B (en
Inventor
劉古煥
楊凱翔
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云光科技股份有限公司
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2021-01-13
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2021-01-13
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2022-07-16
2021-01-13 Application filed by 云光科技股份有限公司 filed Critical 云光科技股份有限公司
2021-01-13 Priority to TW110101251A priority Critical patent/TWI747710B/en
2021-11-21 Application granted granted Critical
2021-11-21 Publication of TWI747710B publication Critical patent/TWI747710B/en
2022-07-16 Publication of TW202227887A publication Critical patent/TW202227887A/en

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Abstract

The invention discloses a backlight device. The backlight device includes a light source base, and a first light homogenizing member, a color conversion member, and a second light homogenizing member are sequentially arranged above the light source base. A plurality of first pyramid structures and a plurality of reflection structures are respectively provided on both sides of the first light homogenizing member. One side of the second light homogenizing member is provided with a plurality of second pyramid structures, and the other side is not provided with any reflective structure. The length of the base of each first pyramid structure and each second pyramid structure is 1/40 times to 1/2 times the width or length of each light emitting diode, and the outer diameter of each reflecting structure is the width of each light emitting diode or 1/15 times to 5 times the length, and the outer diameter of each reflective structure is not greater than 500 microns. Through the arrangement of the first light homogenizing member and the second light homogenizing member, the backlight device can have a more uniform light emitting effect.

Description

背光裝置Backlight device

本發明涉及一種背光裝置,特別是一種包含Mini LED的直下式背光裝置。The present invention relates to a backlight device, in particular to a direct type backlight device including Mini LED.

習知的Mini LED直下式背光裝置,常存在有在Mini LED上方出現有明顯的亮點的問題。為了解決此問題,部分廠商採用了於Mini LED的燈板上方額外設置擴散板,Mini LED所發出的光束通過擴散板中的擴散粒子的折射後,將可以相對均勻地向外輸出,如此,可以改善亮點的問題。The conventional Mini LED direct-lit backlight device often has a problem that there are obvious bright spots above the Mini LED. In order to solve this problem, some manufacturers use an additional diffuser plate above the Mini LED light board. After the light beam emitted by the Mini LED is refracted by the diffusing particles in the diffuser plate, it can be output relatively uniformly. In this way, it can be Improve highlight issues.

然,在實際應用中,擴散板必須到達預定的厚度,才能有效地解決亮點的問題。但,對於終端產品的廠商來說,追求的是終端產品輕薄化,因此,現有利用擴散板來解決亮點的技術手段,無法符合生產終端產品(例如筆記型電腦、平板電腦、智慧型手機等)的廠商對於產品薄化的需求。另外,若是增加擴散板的厚度,將會降低最終的出光亮度。Of course, in practical applications, the diffuser plate must reach a predetermined thickness in order to effectively solve the problem of bright spots. However, for terminal product manufacturers, the pursuit is to make the terminal product lighter and thinner. Therefore, the existing technical means of using diffuser plates to solve bright spots cannot meet the production of terminal products (such as notebook computers, tablet computers, smart phones, etc.) Manufacturers demand for product thinning. In addition, if the thickness of the diffuser plate is increased, the final light output brightness will be reduced.

本發明公開一種背光裝置,主要用以改善習知利用擴散板來解決包含Mini LED的背光裝置所存在的亮點的技術手段,無法符合生產終端產品的廠商對於產品薄化的需求。The invention discloses a backlight device, which is mainly used to improve the conventional technical means of using a diffuser plate to solve the bright spots of the backlight device including Mini LED, which cannot meet the requirements of manufacturers producing end products for product thinning.

本發明的其中一實施例公開一種背光裝置,其包含:一光源座、一第一均光構件、一色轉換組件及一第二均光構件。光源座包含一基板及多個發光二極體,多個發光二極體彼此間隔地設置於基板,各個發光二極體能發出波長介於420奈米至480奈米的光束;各個發光二極體的寬度、長度及高度分別不大於0.4公釐(mm)、0.4公釐(mm)及0.2公釐(mm);第一均光構件設置於光源座的上方,第一均光構件包含:一第一透明本體、多個第一角錐結構及多組第一反射群組。第一透明本體彼此相反的兩個寬側面分別定義為一第一內側面及一第一外側面;第一透明本體的厚度不大於2公釐(mm)。多個第一角錐結構形成於第一內側面,多個第一角錐結構面對多個發光二極體設置;各個第一角錐結構用以折射發光二極體所發出的光束;各個第一角錐結構的任一底邊的長度介於發光二極體的寬度或長度的1/40倍~1/2倍;各個第一角錐結構相對於第一內側面的垂直高度不大於50微米。各組第一反射群組包含多個反射結構,各個反射結構形成於第一外側面;各組第一反射群組所包含的多個反射結構,位於各個發光二極體的一頂出光面向第一外側面的方向正投影的一正投影區域內,位於各個正投影區域內的多個反射結構,越靠近正投影區域的一中心越密集地排列,越遠離正投影區域的中心越鬆散地排列;各個反射結構對發光二極體所發出的光束的反射率不低於90%;各個反射結構對於發光二極體所發出的光束的穿透率不高於10%;各個反射結構的高度不高於30微米(μm);各個反射結構的最大寬度不大於500微米(μm),且各個反射結構的最大寬度介於發光二極體的寬度或長度的1/15倍~5倍。第一均光構件設置於色轉換組件及光源座之間,而多個發光二極體所發出的藍光光束依序通過第一均光構件及色轉換組件後,將轉換為白光光束。色轉換組件設置於第二均光構件及第一均光構件之間,第二均光構件包含:一第二透明本體及多個第二角錐結構。第二透明本體面對色轉換組件的寬側面定義為一第二內側面;第二透明本體的厚度不大於2公釐(mm)。多個第二角錐結構形成於第二內側面,各個第二角錐結構用以折射通過色轉換組件的白光光束;各個第二角錐結構的任一底邊的長度介於發光二極體的寬度或長度的1/40倍~1/2倍,各個第二角錐結構相對於第一內側面的垂直高度不大於50微米。One of the embodiments of the present invention discloses a backlight device, which includes: a light source base, a first light homogenizing member, a color conversion assembly, and a second light homogenizing member. The light source base includes a substrate and a plurality of light-emitting diodes, the plurality of light-emitting diodes are arranged on the substrate at intervals, and each light-emitting diode can emit light beams with wavelengths ranging from 420 nm to 480 nm; The width, length and height are not greater than 0.4 millimeters (mm), 0.4 millimeters (mm) and 0.2 millimeters (mm) respectively; the first homogenizing member is arranged above the light source base, and the first homogenizing member includes: a A first transparent body, a plurality of first pyramid structures and a plurality of first reflection groups. The two opposite wide sides of the first transparent body are respectively defined as a first inner side and a first outer side; the thickness of the first transparent body is not greater than 2 millimeters (mm). A plurality of first pyramid structures are formed on the first inner side surface, and the plurality of first pyramid structures are arranged facing the plurality of light-emitting diodes; each first pyramid structure is used to refract the light beams emitted by the light-emitting diodes; each first pyramid The length of any bottom side of the structure is between 1/40 times to 1/2 times the width or length of the light emitting diode; the vertical height of each first pyramid structure relative to the first inner side surface is not greater than 50 microns. Each group of first reflection groups includes a plurality of reflection structures, and each reflection structure is formed on the first outer side surface; the plurality of reflection structures included in each group of first reflection groups are located on a top light surface of each light-emitting diode. In an orthographic projection area of an orthographic projection in the direction of an outer side, a plurality of reflective structures located in each orthographic projection area are arranged more densely as they are closer to a center of the orthographic projection area, and more loosely arranged as they are farther away from the center of the orthographic projection area ; The reflectivity of each reflective structure to the light beam emitted by the light-emitting diode is not less than 90%; the transmittance of each reflective structure to the light beam emitted by the light-emitting diode is not higher than 10%; the height of each reflective structure is not higher than 30 micrometers (μm); the maximum width of each reflective structure is not greater than 500 micrometers (μm), and the maximum width of each reflective structure is between 1/15 times to 5 times the width or length of the light-emitting diode. The first light homogenizing member is disposed between the color conversion component and the light source base, and the blue light beams emitted by the plurality of light emitting diodes are converted into white light beams after passing through the first light homogenization member and the color conversion component in sequence. The color conversion component is disposed between the second light-homing member and the first light-homing member, and the second light-homing member includes: a second transparent body and a plurality of second pyramid structures. The wide side of the second transparent body facing the color conversion component is defined as a second inner side; the thickness of the second transparent body is not greater than 2 millimeters (mm). A plurality of second pyramid structures are formed on the second inner side surface, and each second pyramid structure is used to refract the white light beam passing through the color conversion component; the length of any base of each second pyramid structure is between the width of the light-emitting diode or the width of the light-emitting diode. 1/40 times to 1/2 times the length, the vertical height of each second pyramid structure relative to the first inner side surface is not greater than 50 microns.

綜上所述,本發明的背光裝置通過第一均光構件、多個第一角錐結構、多個反射結構、第二均光構件及多個第二角錐結構等設計,不但可以提升背光裝置的均光度,還可以達到生產終端產品的廠商對於產品薄化(例如是背光裝置整體的厚度小於5公釐的需求。To sum up, the backlight device of the present invention is designed through the first light-homing member, a plurality of first pyramid structures, a plurality of reflective structures, a second light-homing member, and a plurality of second pyramid structures, etc., which can not only improve the performance of the backlight device The uniform luminosity can also meet the requirements of manufacturers producing end products for product thinning (for example, the overall thickness of the backlight device is less than 5 mm.

為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, rather than make any claims to the protection scope of the present invention. limit.

於以下說明中,如有指出請參閱特定圖式或是如特定圖式所示,其僅是用以強調於後續說明中,所述及的相關內容大部份出現於該特定圖式中,但不限制該後續說明中僅可參考所述特定圖式。In the following description, if it is indicated to refer to a specific figure or as shown in a specific figure, it is only used for emphasis in the subsequent description, and most of the related content mentioned appears in the specific figure, However, it is not limited that only the specific drawings may be referred to in this subsequent description.

請一併參閱圖1及圖2,圖1顯示為本發發明的背光裝置100的側面示意圖,圖2為本發明的背光裝置的局部放大示意圖,於圖1中所示的各個第一角錐結構22、各個反射結構231及各個第二角錐結構42的尺寸與各個發光二極體12的尺寸,僅是示意圖而不代表真實的比例。本發明的背光裝置100包含一光源座1、一第一均光構件2、一色轉換組件3、一第二均光構件4及一稜鏡片5。第一均光構件2設置於光源座1的上方,色轉換組件3設置於第一均光構件2的上方,而第一均光構件2位於光源座1及色轉換組件3之間,第二均光構件4設置於色轉換組件3的上方,而色轉換組件3位於第一均光構件2及第二均光構件4之間,稜鏡片5設置於第二均光構件4的上方,而第二均光構件4位於稜鏡片5及色轉換組件3之間。Please refer to FIG. 1 and FIG. 2 together. FIG. 1 is a schematic side view of the backlight device 100 of the present invention, and FIG. 2 is a partial enlarged schematic view of the backlight device of the present invention. Each of the first pyramid structures shown in FIG. 1 22. The size of each reflection structure 231 and each second pyramid structure 42 and the size of each light emitting diode 12 are only schematic diagrams and do not represent real proportions. The backlight device 100 of the present invention includes a light source base 1 , a first light homogenizing member 2 , a color conversion component 3 , a second light homogenizing member 4 , and a lens 5 . The first light homogenizing member 2 is arranged above the light source base 1, the color conversion assembly 3 is disposed above the first light homogenizing member 2, and the first light homogenizing member 2 is located between the light source base 1 and the color conversion assembly 3. The light-homing member 4 is arranged above the color conversion assembly 3, and the color conversion assembly 3 is located between the first light-homing member 2 and the second light-homing member 4, the diaphanous sheet 5 is disposed above the second light-homing member 4, and The second light homogenizing member 4 is located between the lens 5 and the color conversion component 3 .

在不同的實施例中,背光裝置100也可以是不設置有所述稜鏡片5,或者,背光裝置100也可以是依據需求設置有其他構件,而不侷限於僅可設置有上述該些構件。需說明的是,於本實施例的圖1中,並未顯示出用來支撐第一均光構件2、色轉換組件3、第二均光構件4及稜鏡片5的構件,該等構件的外型、尺寸等皆可依據背光裝置100實際應用的產品的類型、外型、尺寸等進行設計,於此不加以限制。In different embodiments, the backlight device 100 may also not be provided with the iris sheet 5, or the backlight device 100 may also be provided with other components according to requirements, and is not limited to only be provided with the above-mentioned components. It should be noted that, in FIG. 1 of the present embodiment, the members used to support the first light-homing member 2, the color conversion assembly 3, the second light-homing member 4 and the lens 5 are not shown. The appearance, size, etc. can be designed according to the type, appearance, size, etc. of the product in which the backlight device 100 is actually applied, which is not limited herein.

光源座1包含:一基板11、多個發光二極體12及一封裝層13。多個發光二極體12彼此間隔地設置於基板11。基板11可以是依據需求為各式電路板,基板11的材料例如可以是包含玻璃、FR4(玻璃纖維板)、BT(樹脂)等,於此不加以限制。基板11上設置的發光二極體12的數量,可以是依據需求變化,於此不加以限制。The light source base 1 includes: a substrate 11 , a plurality of light emitting diodes 12 and an encapsulation layer 13 . The plurality of light emitting diodes 12 are provided on the substrate 11 at intervals. The substrate 11 can be various circuit boards according to requirements, and the material of the substrate 11 can include glass, FR4 (glass fiber board), BT (resin), etc., for example, which is not limited here. The number of the light emitting diodes 12 disposed on the substrate 11 can be changed according to requirements, which is not limited herein.

各個發光二極體12能發出藍光光束,且各個發光二極體12的寬度12W、長度12D及高度12H分別不大於0.4公釐(mm)、0.4公釐(mm)及0.2公釐(mm)。在具體的應用中,各個發光二極體12例如可以是覆晶式(flip chip)次毫米發光二極體晶片(Mini LED),但不以此為限。在其中一個較佳的實施例中,各個發光二極體12的寬度可以是介於0.1公釐(mm)至0.4公釐(mm),各個發光二極體12的長度可以是介於0.1公釐(mm)至0.4公釐(mm),各個發光二極體12的高度可以是介於0.05公釐(mm)至0.2公釐(mm),而彼此相鄰的兩個發光二極體12的中心光軸的距離L可以是介於2公釐至6公釐。Each light-emitting diode 12 can emit a blue light beam, and the width 12W, length 12D and height 12H of each light-emitting diode 12 are not greater than 0.4 millimeters (mm), 0.4 millimeters (mm) and 0.2 millimeters (mm), respectively. . In a specific application, each light-emitting diode 12 may be, for example, a flip chip sub-millimeter light-emitting diode chip (Mini LED), but not limited thereto. In one preferred embodiment, the width of each light-emitting diode 12 may be between 0.1 millimeters (mm) and 0.4 millimeters (mm), and the length of each light-emitting diode 12 may be between 0.1 mm millimeters (mm) to 0.4 millimeters (mm), the height of each light emitting diode 12 may be between 0.05 millimeters (mm) to 0.2 millimeters (mm), and the two light emitting diodes 12 adjacent to each other The distance L of the central optical axis may be between 2 mm and 6 mm.

封裝層13形成於基板11上,且封裝層13包覆各個發光二極體12,而各個發光二極體12所發出的藍光光束是通過封裝層13向第一均光構件2的方向射出。封裝層13主要是用來保護各個發光二極體12,而避免各個發光二極體12直接暴露於外。封裝層13的材料例如可以是包含矽樹脂、環氧樹脂等。在不同的實施例中,封裝層13內可以是摻有擴散粒子,藉此使各個發光二極體12所發出的光束能夠更均勻地,由封裝層13相反於基板11的一側向外射出。在較佳的實施例中,封裝層13的厚度可以是介於0.1公釐至0.6公釐,且封裝層13的折射率可以是介於1.4~1.6。The encapsulation layer 13 is formed on the substrate 11 , and the encapsulation layer 13 covers each light emitting diode 12 , and the blue light beam emitted by each light emitting diode 12 is emitted toward the first light homogenizing member 2 through the encapsulation layer 13 . The encapsulation layer 13 is mainly used to protect the light emitting diodes 12 and prevent the light emitting diodes 12 from being directly exposed to the outside. The material of the encapsulation layer 13 may include, for example, silicone resin, epoxy resin, or the like. In different embodiments, the encapsulation layer 13 may be doped with diffusing particles, so that the light beams emitted by each light-emitting diode 12 can be more uniformly emitted from the side of the encapsulation layer 13 opposite to the substrate 11 . . In a preferred embodiment, the thickness of the encapsulation layer 13 may be between 0.1 mm and 0.6 mm, and the refractive index of the encapsulation layer 13 may be between 1.4 and 1.6.

在特殊的應用中,封裝層13也可以是包含磷光體、半導體奈米晶體(II-VI族或III-V族化合物)等材料,而各個發光二極體12所出發出的藍光光束通過封裝層13後,將轉換為白光光束。In special applications, the encapsulation layer 13 can also be made of materials such as phosphors, semiconductor nanocrystals (II-VI or III-V compounds), etc., and the blue light beams emitted by each light-emitting diode 12 pass through the encapsulation After layer 13, it will be converted into a white light beam.

如圖3所示,本發明的光源座1在不同的實施例中,基板11也可以是設置有多個封裝體14,各個封裝體14包覆單一個發光二極體12。而且,各個封裝體14可以是製作為半球狀,封裝體14可以作為光學透鏡,通過光學透鏡的設置,將可以進一步地提高發光二極體12的出光角度。當然,封裝體14也可以是摻有色轉換材料,而發光二極體12所發出的藍光光束,通過各個封裝體14後則轉換為白光光束。各個封裝體14例如可以是利用點膠等方式形成於發光二極體12的外圍,但不以此為限。As shown in FIG. 3 , in different embodiments of the light source base 1 of the present invention, the substrate 11 may also be provided with a plurality of packages 14 , and each package 14 covers a single light-emitting diode 12 . Moreover, each package body 14 can be made into a hemispherical shape, and the package body 14 can be used as an optical lens, and the light emitting angle of the light emitting diode 12 can be further improved by the arrangement of the optical lens. Of course, the package body 14 may also be doped with a color conversion material, and the blue light beam emitted by the light emitting diodes 12 is converted into a white light beam after passing through each package body 14 . Each package 14 may be formed on the periphery of the light emitting diode 12 by, for example, dispensing glue, but not limited thereto.

如圖4所示,在不同的實施例中,基板11還可以是設置有多個擋牆15,各個擋牆15位於彼此相鄰的兩個發光二極體12之間,而各個擋牆15是包圍其中一個發光二極體12。各個擋牆15面對發光二極體12的一側能反射發光二極體12所發出的藍光光束。通過擋牆15的設置,可以增加發光二極體12所發出的光束的利用率,而使發光二極體12所發出的大部分光束都是朝向遠離基板11的方向射出。各個擋牆15的高度可以是大致等於封裝體14的高度,但不以此為限。各個擋牆15的外型、尺寸不以圖中所示為限。各個擋牆15的材料例如可以是白色樹脂,且多個擋牆15例如可以是以點膠、模具成形等方式形成於基板11。As shown in FIG. 4 , in different embodiments, the substrate 11 may also be provided with a plurality of retaining walls 15 , each retaining wall 15 is located between two adjacent light emitting diodes 12 , and each retaining wall 15 is to surround one of the light-emitting diodes 12 . The side of each barrier wall 15 facing the light emitting diode 12 can reflect the blue light beam emitted by the light emitting diode 12 . By disposing the blocking wall 15 , the utilization rate of the light beams emitted by the light emitting diodes 12 can be increased, so that most of the light beams emitted by the light emitting diodes 12 are emitted in a direction away from the substrate 11 . The height of each blocking wall 15 may be approximately equal to the height of the package body 14 , but is not limited thereto. The appearance and size of each retaining wall 15 are not limited to those shown in the drawings. The material of each retaining wall 15 may be, for example, white resin, and the plurality of retaining walls 15 may be formed on the substrate 11 by, for example, glue dispensing, mold forming, or the like.

第一均光構件2包含:一第一透明本體21、多個第一角錐結構22及多組第一反射群組23。第一透明本體21的材料例如可以是包含聚碳酸酯(Polycarbonate, PC)、聚甲基丙烯酸甲酯(Polymethyl methacrylate, PMMA)或聚對苯二甲酸乙二醇脂(polyethylene terephthalate, PET)等,於此不加以限制。需說明的是,於此所指的第一透明本體21的「透明」,是指第一透明本體21中內部不摻有其他粒子,且第一透明本體21對於發光二極體12所發出的藍光光束的穿透率是不低於90%。換句話說,本發明所述的第一透明本體21與習知的擴散板不相同,習知的擴散板中摻有擴散粒子,而本發明的第一透明本體21則是不摻有任何擴散粒子。The first light homogenizing member 2 includes: a first transparent body 21 , a plurality of first pyramid structures 22 and a plurality of groups of first reflection groups 23 . The material of the first transparent body 21 may be, for example, including polycarbonate (Polycarbonate, PC), polymethyl methacrylate (PMMA) or polyethylene terephthalate (polyethylene terephthalate, PET), etc., There is no restriction here. It should be noted that the “transparency” of the first transparent body 21 referred to here means that the first transparent body 21 is not doped with other particles, and the first transparent body 21 emits light from the light-emitting diode 12 . The penetration rate of the blue light beam is not less than 90%. In other words, the first transparent body 21 of the present invention is different from the conventional diffuser plate. The conventional diffuser plate is mixed with diffusing particles, while the first transparent body 21 of the present invention is not mixed with any diffuser. particle.

第一透明本體21彼此相反的兩個寬側面分別定義為一第一內側面211及一第一外側面212。多個第一角錐結構22形成於第一內側面211,而多個第一角錐結構22是面對多個發光二極體12設置。各個第一角錐結構22用以折射發光二極體12所發出的光束。The two opposite wide sides of the first transparent body 21 are respectively defined as a first inner side 211 and a first outer side 212 . The plurality of first pyramid structures 22 are formed on the first inner side surface 211 , and the plurality of first pyramid structures 22 are disposed facing the plurality of light emitting diodes 12 . Each of the first pyramid structures 22 is used to refract the light beams emitted by the light emitting diodes 12 .

在實際應用中,各個第一角錐結構22與第一透明本體21是一體成型地設置,亦即,在第一透明本體21及多個第一角錐結構22是於製造過程中一次性地形成,而多個第一角錐結構22不是於第一透明本體21製造完成後,才利用黏合或是其他方式固定於第一透明本體21的第一內側面211。In practical applications, each of the first pyramid structures 22 and the first transparent body 21 are integrally formed, that is, the first transparent body 21 and the plurality of first pyramid structures 22 are formed at one time during the manufacturing process. The plurality of first pyramid structures 22 are not fixed to the first inner side surface 211 of the first transparent body 21 by bonding or other means after the first transparent body 21 is manufactured.

如圖1、圖2、圖5及圖6所示,在實際應用中,各個第一角錐結構22可以是正三角錐結構,而各個第一角錐結構22包含一正三角形底面221及三個斜側面222,任一個斜側面222與正三角形底面221的夾角可以是介於50度至70度。各個第一角錐結構22的任一底邊2211的長度2211D介於發光二極體的寬度12W或長度12D的1/40倍~1/2倍,且各個第一角錐結構22的任一底邊2211的長度2211D不大於100微米(μm),各個第一角錐結構22的頂點223與第一內側面211的垂直高度22H不大於50微米(μm),較佳地,各個第一角錐結構22的頂點223與第一內側面211的垂直高度22H介於10微米(μm)至50微米(μm)。較佳地,第一內側面211於任一個正投影區域A中形成有20~50個第一角錐結構22。As shown in FIG. 1 , FIG. 2 , FIG. 5 and FIG. 6 , in practical applications, each first pyramid structure 22 may be a regular triangle pyramid structure, and each first pyramid structure 22 includes a regular triangle bottom surface 221 and three inclined sides 222, the included angle between any inclined side surface 222 and the bottom surface 221 of the equilateral triangle may be between 50 degrees and 70 degrees. The length 2211D of any bottom edge 2211 of each first pyramid structure 22 is between 1/40 times to 1/2 times the width 12W or the length 12D of the light emitting diode, and any bottom edge of each first pyramid structure 22 The length 2211D of the 2211 is not more than 100 micrometers (μm), and the vertical height 22H between the vertex 223 of each first pyramid structure 22 and the first inner side surface 211 is not more than 50 micrometers (μm). The vertical height 22H of the vertex 223 and the first inner side surface 211 is between 10 micrometers (μm) and 50 micrometers (μm). Preferably, 20-50 first pyramid structures 22 are formed in any orthographic projection area A of the first inner side surface 211 .

較佳地,任一個斜側面222與正三角形底面221的夾角介於55度至65度。舉例來說,各個第一角錐結構22的底邊2211的長度2211D可以是50微米、各個斜側面222的斜邊2221長度2221D可以是38.2微米,而第一角錐結構22的頂點223至正三角形底面221的垂直高度22H則可以是25微米,且任一個斜側面222與正三角形底面221的夾角則可以是60度。在另一個具體例子中,各個第一角錐結構22的底邊2211的長度2211D可以是50微米、各個斜側面222的斜邊2221長度2221D可以是42.3微米,而第一角錐結構22的頂點223至正三角形底面221的垂直高度22H則可以是31微米,且任一個斜側面222與正三角形底面221的夾角則可以是65度。Preferably, the included angle between any inclined side surface 222 and the bottom surface 221 of the equilateral triangle is between 55 degrees and 65 degrees. For example, the length 2211D of the base 2211 of each first pyramid structure 22 may be 50 μm, the length 2221D of the hypotenuse 2221 of each inclined side surface 222 may be 38.2 μm, and the vertex 223 of the first pyramid structure 22 reaches the bottom surface of an equilateral triangle. The vertical height 22H of the 221 may be 25 microns, and the included angle between any inclined side surface 222 and the bottom surface 221 of the equilateral triangle may be 60 degrees. In another specific example, the length 2211D of the bottom edge 2211 of each first pyramid structure 22 may be 50 μm, the length 2221D of the hypotenuse 2221 of each inclined side surface 222 may be 42.3 μm, and the vertex 223 of the first pyramid structure 22 to The vertical height 22H of the equilateral triangle bottom surface 221 may be 31 μm, and the included angle between any inclined side surface 222 and the equilateral triangle bottom surface 221 may be 65 degrees.

如圖5所示,各個第一角錐結構22是以最密排列的方式形成於第一透明本體21的第一內側面211,亦即,第一內側面211是佈滿第一角錐結構22,而彼此相鄰的任兩個第一角錐結構22之間不存在有間隙。As shown in FIG. 5 , each of the first pyramid structures 22 is formed on the first inner side surface 211 of the first transparent body 21 in a densely arranged manner, that is, the first inner side surface 211 is covered with the first pyramid structures 22 , However, there is no gap between any two first pyramid structures 22 adjacent to each other.

值得一提的是,在實際應用中,所述第一透明本體21的厚度21T是不大於2公釐(mm),而第一均光構件2整體的厚度2T則是小於0.5公釐。在習知技術中,若是採用厚度不大於2公釐(mm)的擴散板來取代本發明的第一均光構件2,申請人經實際實驗發現,光源座1所發出的光束通過該擴散板所輸出的面光源的均光度,明顯低於通過本發明的第一均光構件2所輸出的面光源的均光度,而且如果通過增加該擴散板中的擴散粒子,來使通過該擴散板所輸出的面光源的均光度到達通過本發明的第一均光構件2所輸出的面光源的均光度,則會發生通過該擴散板所輸出的面光源的亮度明顯低於通過本發明的第一均光構件2所輸出的面光源的亮度。It is worth mentioning that, in practical applications, the thickness 21T of the first transparent body 21 is not greater than 2 millimeters (mm), and the overall thickness 2T of the first homogenizing member 2 is less than 0.5 mm. In the prior art, if a diffuser plate with a thickness of not more than 2 millimeters (mm) is used to replace the first light homogenizing member 2 of the present invention, the applicant has found through actual experiments that the light beam emitted by the light source base 1 passes through the diffuser plate. The uniform luminosity of the output surface light source is significantly lower than the uniform luminosity of the surface light source outputted by the first uniform light member 2 of the present invention, and if the diffuser particles in the diffuser plate are increased, the diffuser plate can pass through the diffuser plate. If the uniform luminosity of the output surface light source reaches the uniform luminosity of the surface light source outputted by the first light-homing member 2 of the present invention, the brightness of the surface light source outputted by the diffuser will be significantly lower than that of the surface light source outputted by the first light-homing element 2 of the present invention. The brightness of the surface light source output by the light homogenizing member 2 .

也就是說,本發明的第一均光構件2在厚度不大於2公釐的情況下,對比於習知技術中厚度不大於2公釐(mm)的擴散板,無論在亮度或是均光度的表現都比較好,而習知技術中厚度不大於2公釐的擴散板,若要得到較佳的均光度,則亮度會相對變差,若要得到相對較佳的亮度,則均光度會相對變差,本發明的第一均光構件2則可以同時達到亮度及均光度的要求。That is to say, when the thickness of the first light homogenizing member 2 of the present invention is not more than 2 mm, compared with the diffuser plate with a thickness of not more than 2 mm (mm) in the prior art, no matter the brightness or the uniformity of light The performance of the diffuser is relatively good, and the diffuser plate with a thickness of not more than 2 mm in the prior art, if you want to obtain better uniform brightness, the brightness will be relatively poor, if you want to obtain relatively good brightness, the uniform brightness will be Relatively worse, the first light homogenizing member 2 of the present invention can meet the requirements of brightness and uniform light intensity at the same time.

如圖2、圖7及圖8所示,圖7為本發明的背光裝置的第一均光構件的第一外側面的俯視圖,圖8為圖7的局部放大示意圖。各組第一反射群組23包含多個反射結構231,各個反射結構231形成於第一外側面212。各組第一反射群組23所包含的多個反射結構231,位於各個發光二極體12的一頂出光面121向第一外側面212的方向正投影的一正投影區域A內。As shown in FIG. 2 , FIG. 7 and FIG. 8 , FIG. 7 is a top view of the first outer side surface of the first light homogenizing member of the backlight device of the present invention, and FIG. 8 is a partial enlarged schematic view of FIG. 7 . Each set of first reflection groups 23 includes a plurality of reflection structures 231 , and each reflection structure 231 is formed on the first outer side surface 212 . The plurality of reflection structures 231 included in each first reflection group 23 are located in an orthographic projection area A where the top light-emitting surface 121 of each light-emitting diode 12 is orthographically projected in the direction of the first outer side surface 212 .

如圖6所示,位於各個正投影區域A內的多個反射結構231,越靠近正投影區域的一中心C越密集地排列,越遠離正投影區域的中心C越鬆散地排列,也就是說,越靠近正投影區域A的中心C的任兩個相鄰的反射結構231彼此間的間距P越小,而越遠離正投影區域A的中心C的任兩個相鄰的反射結構231彼此間的間距P則越大。As shown in FIG. 6 , the plurality of reflective structures 231 located in each orthographic projection area A are arranged more densely as they are closer to a center C of the orthographic projection area, and more loosely arranged as they are farther away from the center C of the orthographic projection area. , the distance P between any two adjacent reflective structures 231 that are closer to the center C of the orthographic projection area A is smaller, and the distance P between any two adjacent reflective structures 231 that are farther from the center C of the orthographic projection area A is smaller. The distance P is larger.

於本實施例的圖式中,是以各個反射結構231為圓形結構為例,但反射結構231的外型不以圓形為限,各個反射結構231的外型例如也可以是矩形、三角形等。另外,於本實施例的圖式中,是以多個反射結構231大致以同心圓的方式排列設置,但反射結構231的排列方式不以此為限,只要多個反射結構231越靠近正投影區域A的中心C越密集地排列,越遠離正投影區域A的中心C越鬆散地排列,多個反射結構231以何種方式排列,皆可依據需求變化。In the drawings of this embodiment, it is used as an example that each reflection structure 231 is a circular structure, but the shape of the reflection structure 231 is not limited to a circle, and the shape of each reflection structure 231 can also be, for example, a rectangle or a triangle. Wait. In addition, in the drawings of this embodiment, the plurality of reflective structures 231 are arranged in approximately concentric circles, but the arrangement of the reflective structures 231 is not limited to this, as long as the plurality of reflective structures 231 are closer to the orthographic projection The center C of the area A is more densely arranged, and the farther away from the center C of the orthographic projection area A is, the more loosely arranged.

如圖6所示,在其中一個較佳的實施例中,各個正投影區域A以其中心C為圓心,以一預定長度R為半徑所繪出的一虛擬圓形,將正投影區域A區隔為一密集區A1及一鬆散區A2,位於各個密集區A1內的多個反射結構231的一底面A3的面積總和,佔密集區A1的面積的至少80%以上,位於各個密集區A1內的多個反射結構231的底面A3的面積總和,佔鬆散區A2的面積的不高於5%。預定長度R不高於正投影區域A的寬度AW或長度AD的1/2倍。As shown in FIG. 6 , in one of the preferred embodiments, each orthographic projection area A has its center C as the center of the circle and a virtual circle drawn with a predetermined length R as the radius. Separated into a dense area A1 and a loose area A2, the total area of a bottom surface A3 of the plurality of reflective structures 231 located in each dense area A1 occupies at least 80% or more of the area of the dense area A1, and is located in each dense area A1 The total area of the bottom surfaces A3 of the plurality of reflective structures 231 accounts for no more than 5% of the area of the loose area A2. The predetermined length R is not higher than 1/2 times the width AW or the length AD of the orthographic projection area A. FIG.

在較佳的實施例中,位於各個密集區A1中彼此相鄰的兩個反射結構231彼此間的間距P不大於預定長度R的1/10倍;位於各個鬆散區A2中彼此相鄰的兩個反射結構231彼此間的間距P不小於預定長度R的1/2倍。在實際應用中,各個反射結構231的最大寬度(外徑)是發光二極體的1/15倍~5倍,且各反射結構231的最大寬度(外徑)不大於500微米(μm),較佳地,各個反射結構231外徑介於30微米(μm)至500微米(μm);另外,各個反射結構的高度不高於30微米(μm)。In a preferred embodiment, the distance P between the two reflective structures 231 adjacent to each other in each dense area A1 is not greater than 1/10 times of the predetermined length R; the two adjacent reflective structures 231 in each loose area A2 The spacing P between the reflective structures 231 is not less than 1/2 times the predetermined length R. In practical applications, the maximum width (outer diameter) of each reflective structure 231 is 1/15 times to 5 times that of the light-emitting diode, and the maximum width (outer diameter) of each reflective structure 231 is not greater than 500 micrometers (μm). Preferably, the outer diameter of each reflection structure 231 ranges from 30 micrometers (μm) to 500 micrometers (μm); in addition, the height of each reflection structure is not higher than 30 micrometers (μm).

在實際應用中,各個反射結構231對發光二極體12所發出的光束的反射率不低於90%,且各個反射結構對於發光二極體12所發出的光束的穿透率不高於10%。舉例來說,反射結構231的材料可以是包含氧化鈦、氧化鋁、氧化矽等金屬氧化物粒子所構成的樹脂,且各個反射結構231可以是利用印刷、噴塗等方式,直接形成於第一外側面212。In practical applications, the reflectivity of each reflection structure 231 to the light beam emitted by the light emitting diode 12 is not less than 90%, and the transmittance of each reflection structure to the light beam emitted by the light emitting diode 12 is not higher than 10% %. For example, the material of the reflective structure 231 may be a resin including metal oxide particles such as titanium oxide, aluminum oxide, silicon oxide, etc., and each reflective structure 231 may be directly formed on the first outer surface by printing, spraying, etc. Side 212.

請復參圖1,多個發光二極體12所發出的藍光光束依序通過第一均光構件2及色轉換組件3後,將轉換為白光光束。在實際應用中,色轉換組件3例如可以是包含一藍光穿透膜31及一色轉換膜32,藍光穿透膜31對波長介於420奈米至480奈米的光束的穿透率不低於90%,且藍光穿透膜31對波長介於550奈米至750奈米的光束的穿透率不大於5%。藍光穿透膜31設置於色轉換膜32與第一均光構件2之間。色轉換膜32可以包含磷光體、半導體奈米晶體(II-VI族或III-V族化合物)等材料,而通過藍光穿透膜31的藍光光束,將進入色轉換膜32中,並據以轉換為白光光束。在實際應用中,色轉換組件3所包含的藍光穿透膜31的厚度31T及色轉換膜32的厚度32T總和小於1公釐。Referring to FIG. 1 again, the blue light beams emitted by the plurality of light emitting diodes 12 will be converted into white light beams after passing through the first light homogenizing member 2 and the color conversion element 3 in sequence. In practical applications, the color conversion element 3 may include, for example, a blue light transmissive film 31 and a color conversion film 32 , and the transmittance of the blue light transmissive film 31 to light beams with wavelengths ranging from 420 nm to 480 nm is not lower than 90%, and the transmittance of the blue light transmission film 31 to light beams with wavelengths ranging from 550 nm to 750 nm is not more than 5%. The blue light transmission film 31 is disposed between the color conversion film 32 and the first light homogenizing member 2 . The color conversion film 32 may contain materials such as phosphors, semiconductor nanocrystals (II-VI or III-V compounds), and the blue light beam passing through the blue light penetrating film 31 will enter the color conversion film 32, and accordingly Converted to a beam of white light. In practical applications, the sum of the thickness 31T of the blue light transmission film 31 and the thickness 32T of the color conversion film 32 included in the color conversion element 3 is less than 1 mm.

請復參圖1、圖5及圖6,第二均光構件4包含:一第二透明本體41及多個第二角錐結構42。第二透明本體41面對色轉換組件3的彼此相反的兩個寬側面分別定義為一第二內側面411及一第二外側面412。第二內側面411形成多個第二角錐結構42,且多個第二角錐結構42面對第一均光構件2的多個反射結構231設置。各個第二角錐結構42用以折射通過色轉換組件3的白光光束。在實際應用中,各個第二角錐結構42是與第二透明本體41一體成型地設置,而多個第二角錐結構42不是通過黏貼或是其他方式固定於第二透明本體41。Referring to FIGS. 1 , 5 and 6 again, the second light homogenizing member 4 includes: a second transparent body 41 and a plurality of second pyramid structures 42 . The two opposite wide sides of the second transparent body 41 facing the color conversion element 3 are respectively defined as a second inner side 411 and a second outer side 412 . The second inner side surface 411 forms a plurality of second pyramid structures 42 , and the plurality of second pyramid structures 42 are disposed facing the plurality of reflection structures 231 of the first light homogenizing member 2 . Each of the second pyramid structures 42 is used to refract the white light beam passing through the color conversion element 3 . In practical applications, each of the second pyramid structures 42 is integrally formed with the second transparent body 41 , and the plurality of second pyramid structures 42 are not fixed to the second transparent body 41 by sticking or other means.

在具體的應用中,各個第二角錐結構42可以是正三角錐結構,而第二角錐結構42可以是包含一正三角形底面421及三個斜側面422,正三角形底面421與任一個斜側面422的夾角可以是介於50度至70度。較佳地,正三角形底面421與任一個斜側面422的夾角可以是介於55度至65度。各個第二角錐結構42的任一底邊4211的長度4211D不大於100微米(μm)。各個第二角錐結構42的任一底邊4211的長度4211D介於發光二極體12的寬度12W或長度12D的1/40倍~1/2倍,且各個第二角錐結構42的任一底邊4211的長度4211D不大於100微米(μm),各個第二角錐結構42的頂點423與第二內側面411的垂直高度42H不大於50微米(μm),較佳地,各個第二角錐結構42的頂點423與第二內側面411的垂直高度42H介於10微米(μm)至50微米(μm)。In a specific application, each of the second pyramid structures 42 may be a regular triangular pyramid structure, and the second pyramid structures 42 may include a regular triangle bottom surface 421 and three inclined sides 422 , and a regular triangle bottom surface 421 and any one inclined side surface 422 . The included angle may be between 50 degrees and 70 degrees. Preferably, the included angle between the bottom surface 421 of the equilateral triangle and any one of the inclined side surfaces 422 may be between 55 degrees and 65 degrees. The length 4211D of any bottom edge 4211 of each of the second pyramid structures 42 is not greater than 100 micrometers (μm). The length 4211D of any bottom edge 4211 of each second pyramid structure 42 is between 1/40 times to 1/2 times the width 12W or the length 12D of the light emitting diode 12 , and any bottom of each second pyramid structure 42 The length 4211D of the side 4211 is not more than 100 micrometers (μm), and the vertical height 42H between the vertex 423 of each second pyramid structure 42 and the second inner side surface 411 is not more than 50 micrometer (μm), preferably, each second pyramid structure 42 The vertical height 42H of the vertex 423 and the second inner side surface 411 is between 10 micrometers (μm) and 50 micrometers (μm).

需特別說明的是,第二透明本體41的第二外側面412並未設置有任何反射結構231,若是於第二外側面412形成有反射結構231,則使用者於稜鏡片5外觀看背光裝置100時,將會看到設置於第二外側面412的反射結構231,如此,將會讓使用者有不好的觀看體驗。It should be noted that, the second outer side surface 412 of the second transparent body 41 is not provided with any reflective structure 231 . If the reflective structure 231 is formed on the second outer side surface 412 , the user can view the backlight device from the outside of the glazing sheet 5 . 100 , the reflective structure 231 disposed on the second outer side surface 412 will be seen, so that the user will have a bad viewing experience.

於此所指的各個第二角錐結構42與各個第一角錐結構22可以是完全相同的結構,而第一均光構件2及第二均光構件4兩者的差異僅在於第一均光構件2的第一外側面212設置有多個反射結構231,而第二均光構件4的第二外側面412則是不設置有任何反射結構。關於各個第二角錐結構42的斜側面422與正三角形底面421的夾角、斜邊4221的長度4221D、底邊4211的長度4211D、頂點423至正三角形底面421的垂直高度42H的具體的數值,請參閱前述第一角錐結構22所舉的例子,於此不再贅述。當然,在不同的實施例中,各個第二角錐結構42的外型也可以是與各個第一角錐結構22的外型不相同。Each of the second pyramid structures 42 and each of the first pyramid structures 22 referred to herein may be completely identical structures, and the difference between the first light homogenizing member 2 and the second light homogenizing member 4 is only in the first light homogenizing member The first outer side surface 212 of 2 is provided with a plurality of reflection structures 231, while the second outer side surface 412 of the second light homogenizing member 4 is not provided with any reflection structure. Regarding the specific values of the angle between the oblique side surface 422 of each second pyramid structure 42 and the bottom surface 421 of the equilateral triangle, the length 4221D of the oblique side 4221, the length 4211D of the bottom side 4211, and the vertical height 42H from the vertex 423 to the bottom surface 421 of the equilateral triangle, please refer to Please refer to the aforementioned examples of the first pyramid structure 22 , which will not be repeated here. Of course, in different embodiments, the shape of each second pyramid structure 42 may also be different from the shape of each first pyramid structure 22 .

需特別強調的是,第二透明本體41與習知的擴散板不相同,第二透明本體41是呈現為透明狀,而第二透明本體41內不額外設置有任何類似擴散粒子的粒子。在實際應用中,所述第二透明本體41的厚度41T是不大於2公釐(mm),而第二均光構件4整體的厚度4T則是小於0.5公釐。It should be emphasized that the second transparent body 41 is different from the conventional diffusion plate, the second transparent body 41 is transparent, and the second transparent body 41 is not provided with any particles similar to diffusion particles. In practical applications, the thickness 41T of the second transparent body 41 is not greater than 2 millimeters (mm), and the overall thickness 4T of the second light homogenizing member 4 is less than 0.5 mm.

依上所述,本發明的背光裝置100通過第一均光構件2及第二均光構件4的設計,可以在使背光裝置100整體厚度不大於5公釐的情況下,使背光裝置100輸出的面光源的均光度仍可達到75%以上。相對地,申請人經過實際實驗發現,若是將本發明的背光裝置100中所包含的第一均光構件2及第二均光構件4取代為兩張傳統的厚度不大於2公釐的擴散板,則背光裝置100所輸出的面光源的均光度將不高於70%,而若是增加兩張擴散板中的擴散粒子,以使背光裝置100所輸出的面光源的均光度高於80%,則背光裝置100所述輸出的面光源的亮度將會明顯低於包含第一均光構件2及第二均光構件4的背光裝置100的背光裝置100所輸出的面光源的亮度。According to the above, the backlight device 100 of the present invention can make the backlight device 100 output output under the condition that the overall thickness of the backlight device 100 is not greater than 5 mm through the design of the first light homogenizing member 2 and the second light homogenizing member 4 The average luminosity of the surface light source can still reach more than 75%. On the contrary, the applicant found through actual experiments that if the first light-homing member 2 and the second light-homing member 4 included in the backlight device 100 of the present invention are replaced by two traditional diffuser plates with a thickness of not more than 2 mm , the average luminosity of the surface light source output by the backlight device 100 will not be higher than 70%, and if the diffusion particles in the two diffuser plates are increased, the average luminosity of the surface light source output by the backlight device 100 will be higher than 80%, Then, the brightness of the surface light source output by the backlight device 100 will be significantly lower than the brightness of the surface light source output by the backlight device 100 including the first light homogenizing member 2 and the second light homogenizing member 4 .

另外,值得一提的是,經申請人實際實驗發現,本發明的背光裝置100,在同時設置有第一均光構件2及第二均光構件4的情況下,背光裝置100所輸出的面光源的亮度可以達到95%以上,且均光度可以達到80%以上,而若背光裝置100僅設置第一均光構件2,而不設置第二均光構件4,則背光裝置100所輸出的面光源的亮度雖然可以達到接近100%,但均光度將降低至60%以下。In addition, it is worth mentioning that, through actual experiments by the applicant, it is found that the backlight device 100 of the present invention, in the case where the first light homogenizing member 2 and the second light homogenizing member 4 are provided at the same time, the output surface of the backlight device 100 The brightness of the light source can reach more than 95%, and the uniform luminosity can reach more than 80%. If the backlight device 100 is only provided with the first light homogenizing member 2 without the second light homogenizing member 4, the output surface of the backlight device 100 Although the brightness of the light source can reach close to 100%, the average brightness will be reduced to below 60%.

綜上所述,本發明的背光裝置100,在採用尺寸接近Mini LED的發光二極體的情況下,通過第一均光構件2、第二均光構件4等設計,可以在使背光裝置100整體厚度小於5公釐的情況下,亮度仍可達到95%以上,而均光度仍可達到80%以上。反觀,習知採用擴散板的背光裝置,在整體厚度小於5公釐的情況下,亮度及均光度皆無法達到與本發明的背光裝置相同的效果。To sum up, in the backlight device 100 of the present invention, in the case of using light-emitting diodes with a size close to Mini LED, through the design of the first light-homing member 2, the second light-homing member 4, etc., the backlight device 100 can be When the overall thickness is less than 5 mm, the brightness can still reach more than 95%, and the average brightness can still reach more than 80%. On the contrary, when the overall thickness of the conventional backlight device using the diffuser plate is less than 5 mm, the brightness and uniformity of light cannot achieve the same effect as the backlight device of the present invention.

以上所述僅為本發明的較佳可行實施例,非因此侷限本發明的專利範圍,故舉凡運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的保護範圍內。The above descriptions are only preferred feasible embodiments of the present invention, which do not limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the protection scope of the present invention. .

100:背光裝置 1:光源座 11:基板 12:發光二極體 121:頂出光面 12W:寬度 12D:長度 12H:高度 13:封裝層 14:封裝體 15:擋牆 2:第一均光構件 2T:厚度 21:第一透明本體 21T:厚度 211:第一內側面 212:第一外側面 22:第一角錐結構 221:正三角形底面 2211:底邊 2211D:長度 222:斜側面 2221:斜邊 2221D:長度 223:頂點 22H:高度 23:第一反射群組 231:反射結構 3:色轉換組件 31:藍光穿透膜 31T:厚度 32:色轉換膜 32T:厚度 4:第二均光構件 4T:厚度 41:第二透明本體 411:第二內側面 412:第二外側面 41T:厚度 42:第二角錐結構 421:正三角形底面 4211:底邊 4211D:長度 422:斜側面 4221:斜邊 4221D:長度 423:頂點 42H:高度 5:稜鏡片 A:正投影區域 A1:密集區 A2:鬆散區 A3:底面 AW:寬度 AD:長度 C:中心 R:預定長度 P:間距 L:距離 100: Backlight device 1: Light source seat 11: Substrate 12: Light Emitting Diodes 121: top out the glossy surface 12W: width 12D: Length 12H: height 13: Encapsulation layer 14: Package body 15: Retaining Wall 2: The first homogenizing member 2T: Thickness 21: The first transparent body 21T: Thickness 211: First inner side 212: First outer side 22: The first pyramid structure 221: The base of an equilateral triangle 2211: Bottom edge 2211D: Length 222: Oblique side 2221: hypotenuse 2221D: Length 223: Vertex 22H: height 23: The first reflection group 231: Reflective Structure 3: Color conversion components 31: Blue light penetrating film 31T: Thickness 32: Color conversion film 32T: Thickness 4: The second homogenizing member 4T: Thickness 41: Second transparent body 411: Second inner side 412: Second outer side 41T: Thickness 42: The second pyramid structure 421: base of equilateral triangle 4211: Bottom edge 4211D: Length 422: Oblique side 4221: hypotenuse 4221D: Length 423: Vertex 42H: height 5: Pills A: Orthographic projection area A1: dense area A2: loose area A3: Bottom AW: width AD: length C: Center R: predetermined length P: Pitch L: distance

圖1為本發明的背光裝置的側面示意圖。FIG. 1 is a schematic side view of the backlight device of the present invention.

圖2為本發明的背光裝置的光源座的局部放大示意圖。FIG. 2 is a partially enlarged schematic view of a light source seat of the backlight device of the present invention.

圖3為本發明的背光裝置的光源座的其中一實施例的側面示意圖。3 is a schematic side view of one embodiment of the light source base of the backlight device of the present invention.

圖4為本發明的背光裝置的光源座的其中一實施例的側面示意圖。FIG. 4 is a schematic side view of one embodiment of the light source base of the backlight device of the present invention.

圖5為本發明的背光裝置的第一均光構件(第二均光構件)的第一內側面(第二內側面)的俯視圖。5 is a plan view of the first inner side surface (second inner side surface) of the first light leveling member (second light leveling member) of the backlight device of the present invention.

圖6為本發明的背光裝置的第一均光構件(第二均光構件)的其中兩個第一角錐結構(第二角錐結構)的示意圖。6 is a schematic diagram of two first pyramid structures (second pyramid structures) of the first light homogenizing member (second light homogenizing member) of the backlight device of the present invention.

圖7為本發明的背光裝置的第一均光構件的第一外側面的俯視圖。7 is a plan view of the first outer side surface of the first light homogenizing member of the backlight device of the present invention.

圖8為圖7的局部放大示意圖。FIG. 8 is a partial enlarged schematic view of FIG. 7 .

100:背光裝置 100: Backlight device

1:光源座 1: Light source seat

11:基板 11: Substrate

12:發光二極體 12: Light Emitting Diodes

121:頂出光面 121: top out the glossy surface

13:封裝層 13: Encapsulation layer

2:第一均光構件 2: The first homogenizing member

2T:厚度 2T: Thickness

21:第一透明本體 21: The first transparent body

21T:厚度 21T: Thickness

211:第一內側面 211: First inner side

212:第一外側面 212: First outer side

22:第一角錐結構 22: The first pyramid structure

23:第一反射群組 23: The first reflection group

231:反射結構 231: Reflective Structure

3:色轉換組件 3: Color conversion components

31:藍光穿透膜 31: Blue light penetrating film

31T:厚度 31T: Thickness

32:色轉換膜 32: Color conversion film

32T:厚度 32T: Thickness

4:第二均光構件 4: The second homogenizing member

4T:厚度 4T: Thickness

41:第二透明本體 41: Second transparent body

411:第二內側面 411: Second inner side

412:第二外側面 412: Second outer side

41T:厚度 41T: Thickness

42:第二角錐結構 42: The second pyramid structure

5:稜鏡片 5: Pills

L:距離 L: distance

Claims (10)

一種背光裝置,其包含: 一光源座,其包含一基板及多個發光二極體,多個所述發光二極體彼此間隔地設置於所述基板,各個所述發光二極體能發出波長介於420奈米至480奈米的光束;各個所述發光二極體的寬度、長度及高度分別不大於0.4公釐(mm)、0.4公釐(mm)及0.2公釐(mm); 一第一均光構件,其設置於所述光源座的上方,所述第一均光構件非為擴散板,所述第一均光構件包含: 一第一透明本體,其彼此相反的兩個寬側面分別定義為一第一內側面及一第一外側面;所述第一透明本體的厚度不大於2公釐(mm); 多個第一角錐結構,其形成於所述第一內側面,多個所述第一角錐結構面對多個所述發光二極體設置;各個所述第一角錐結構用以折射所述發光二極體所發出的光束;各個所述第一角錐結構的任一底邊的長度介於發光二極體的寬度或長度的1/40倍~1/2倍;各個所述第一角錐結構相對於所述第一內側面的垂直高度不大於50微米; 多組第一反射群組,各組所述第一反射群組包含多個反射結構,各個所述反射結構形成於所述第一外側面;各組所述第一反射群組所包含的多個所述反射結構,位於各個所述發光二極體的一頂出光面向所述第一外側面的方向正投影的一正投影區域內,位於各個所述正投影區域內的多個所述反射結構,越靠近所述正投影區域的一中心越密集地排列,越遠離所述正投影區域的所述中心越鬆散地排列;各個所述反射結構對所述發光二極體所發出的光束的反射率不低於90%;各個所述反射結構對於所述發光二極體所發出的光束的穿透率不高於10%;各個所述反射結構的高度不高於30微米(μm);各個所述反射結構的最大寬度不大於500微米(μm),且各個所述反射結構的最大寬度介於發光二極體的寬度或長度的1/15倍~5倍; 一色轉換組件,所述第一均光構件設置於所述色轉換組件及所述光源座之間,而多個所述發光二極體所發出的藍光光束依序通過所述第一均光構件及所述色轉換組件後,將轉換為白光光束; 一第二均光構件,所述色轉換組件設置於所述第二均光構件及所述第一均光構件之間,所述第二均光構件非為擴散板,所述第二均光構件包含: 一第二透明本體,其面對所述色轉換組件的寬側面定義為一第二內側面;所述第二透明本體的厚度不大於2公釐(mm); 多個第二角錐結構,其形成於所述第二內側面,各個所述第二角錐結構用以折射通過所述色轉換組件的白光光束;各個所述第二角錐結構的任一底邊的長度介於發光二極體的寬度或長度的1/40倍~1/2倍各個所述第二角錐結構相對於所述第一內側面的垂直高度不大於50微米。 A backlight device comprising: a light source base, which includes a substrate and a plurality of light emitting diodes, the plurality of light emitting diodes are disposed on the substrate spaced apart from each other, and each of the light emitting diodes can emit wavelengths ranging from 420 nm to 480 nm meters; the width, length and height of each of the light-emitting diodes are not greater than 0.4 millimeters (mm), 0.4 millimeters (mm) and 0.2 millimeters (mm), respectively; A first light homogenizing member disposed above the light source base, the first light homogenizing member is not a diffuser plate, and the first light homogenizing member includes: a first transparent body, the two opposite wide sides are respectively defined as a first inner side and a first outer side; the thickness of the first transparent body is not more than 2 millimeters (mm); a plurality of first pyramid structures, which are formed on the first inner side surface, and are arranged facing the plurality of the light-emitting diodes; each of the first pyramid structures is used to refract the light emission The light beam emitted by the diode; the length of any bottom side of each of the first pyramid structures is between 1/40 times to 1/2 times the width or length of the light-emitting diodes; each of the first pyramid structures The vertical height relative to the first inner side surface is not greater than 50 microns; A plurality of groups of first reflection groups, each group of the first reflection groups includes a plurality of reflection structures, each of the reflection structures is formed on the first outer side surface; each group of the first reflection groups includes a plurality of reflection structures; Each of the reflection structures is located in an orthographic projection area of each of the light-emitting diodes in a direction in which the top-out light faces the first outer side surface, and a plurality of the reflection structures located in each of the orthographic projection areas structure, the closer to a center of the orthographic projection area, the more densely arranged, and the farther away from the center of the orthographic projection area, the more loosely arranged; The reflectivity is not less than 90%; the transmittance of each of the reflective structures to the light beam emitted by the light-emitting diode is not higher than 10%; the height of each of the reflective structures is not higher than 30 micrometers (μm); The maximum width of each of the reflective structures is not greater than 500 micrometers (μm), and the maximum width of each of the reflective structures is between 1/15 times to 5 times the width or length of the light-emitting diode; A color conversion component, the first light-equalizing member is disposed between the color conversion component and the light source base, and the blue light beams emitted by the plurality of light-emitting diodes pass through the first light-equalizing member in sequence And after the color conversion component, it will be converted into a white light beam; a second light homogenizing member, the color conversion component is disposed between the second light homogenizing member and the first light homogenizing member, the second light homogenizing member is not a diffuser plate, the second light homogenizing member is Components include: a second transparent body, the wide side facing the color conversion element is defined as a second inner side; the thickness of the second transparent body is not more than 2 millimeters (mm); A plurality of second pyramid structures are formed on the second inner side surface, each of the second pyramid structures is used to refract the white light beam passing through the color conversion component; any bottom edge of each of the second pyramid structures The length is between 1/40 times to 1/2 times the width or length of the light emitting diode. The vertical height of each of the second pyramid structures relative to the first inner side surface is not greater than 50 microns. 如請求項1所述的背光裝置,其中,各個所述正投影區域以其中心為圓心,以一預定長度為半徑所繪出的一虛擬圓形,將所述正投影區域區隔為一密集區及一鬆散區,位於各個所述密集區內的多個所述反射結構的一底面的面積總和,佔所述密集區的面積的至少80%以上,位於各個所述密集區內的多個所述反射結構的所述底面的面積總和,佔所述鬆散區的面積的不高於5%;所述預定長度不高於正投影區域的寬度或長度的1/2倍。The backlight device according to claim 1, wherein each of the orthographic projection areas is a virtual circle drawn with its center as the center and a predetermined length as the radius, and the orthographic projection area is divided into a dense area and a loose area, the total area of a bottom surface of a plurality of the reflective structures located in each of the dense areas accounts for at least 80% of the area of the dense area, and a plurality of reflective structures located in each of the dense areas The total area of the bottom surface of the reflective structure accounts for no more than 5% of the area of the loose area; the predetermined length is no more than 1/2 times the width or length of the orthographic projection area. 如請求項2所述的背光裝置,其中,位於各個所述密集區中彼此相鄰的兩個所述反射結構彼此間的間距不大於所述預定長度的1/10倍;位於各個所述鬆散區中彼此相鄰的兩個所述反射結構彼此間的間距不小於所述預定長度的1/2倍。The backlight device according to claim 2, wherein the distance between the two reflective structures adjacent to each other in each of the dense areas is not greater than 1/10 times the predetermined length; The distance between the two reflective structures adjacent to each other in the region is not less than 1/2 times the predetermined length. 如請求項1所述的背光裝置,其中,各個所述第一角錐結構為正三角錐結構,而各個所述第一角錐結構包含一正三角形底面及三個斜側面,任一個所述斜側面與所述正三角形底面的夾角介於50度至70度。The backlight device according to claim 1, wherein each of the first pyramid structures is a regular triangular pyramid structure, and each of the first pyramid structures includes a regular triangle bottom surface and three inclined sides, any one of the inclined sides and The included angle of the bottom surface of the equilateral triangle is between 50 degrees and 70 degrees. 如請求項4所述的背光裝置,其中,任一個所述斜側面與所述正三角形底面的夾角介於55度至65度。The backlight device of claim 4, wherein an angle between any one of the inclined side surfaces and the bottom surface of the equilateral triangle is between 55 degrees and 65 degrees. 如請求項1所述的背光裝置,其中,各個所述第二角錐結構為正三角錐結構,而各個所述第二角錐結構包含一正三角形底面及三個斜側面,任一個所述斜側面與所述正三角形底面的夾角介於50度至70度。The backlight device according to claim 1, wherein each of the second pyramid structures is a regular triangular pyramid structure, and each of the second pyramid structures includes a regular triangle bottom surface and three inclined sides, any one of the inclined sides and The included angle of the bottom surface of the equilateral triangle is between 50 degrees and 70 degrees. 如請求項6所述的背光裝置,其中,任一個所述斜側面與所述正三角形底面的夾角介於55度至65度。The backlight device of claim 6, wherein an angle between any one of the inclined side surfaces and the bottom surface of the equilateral triangle is between 55 degrees and 65 degrees. 如請求項1所述的背光裝置,其中,所述色轉換組件包含一藍光穿透膜及一色轉換膜,所述藍光穿透膜對波長介於420奈米至480奈米的光束的穿透率不低於90%,且所述藍光穿透膜對波長介於550奈米至750奈米的光束的穿透率不大於5%;所述藍光穿透膜設置於所述色轉換膜與所述第一均光構件之間;所述背光裝置還包含一稜鏡片,所述第二均光構件設置於所述稜鏡片及所述色轉換膜之間。The backlight device of claim 1, wherein the color conversion element comprises a blue light transmissive film and a color conversion film, and the blue light transmissive film penetrates light beams with wavelengths ranging from 420 nm to 480 nm. The rate is not less than 90%, and the transmittance of the blue light penetrating film to the light beam with a wavelength of 550 nm to 750 nm is not more than 5%; the blue light penetrating film is arranged on the color conversion film and the color conversion film. between the first light homogenizing members; the backlight device further includes a diaphragm, and the second light homogenizing member is disposed between the diaphragm and the color conversion film. 如請求項8所述的背光裝置,其中,所述光源座還包含一封裝層,所述封裝層包覆各個所述發光二極體,而各個所述發光二極體所發出的藍光光束是通過所述封裝層向所述第一均光構件的方向射出;所述封裝層的厚度介於0.1公釐至0.6公釐,且所述封裝層的折射率介於1.4~1.6;彼此相鄰的兩個所述發光二極體的中心光軸的距離介於2公釐至6公釐。The backlight device according to claim 8, wherein the light source base further comprises an encapsulation layer, the encapsulation layer covers each of the light-emitting diodes, and the blue light beams emitted by each of the light-emitting diodes are Through the encapsulation layer, it is emitted in the direction of the first light homogenizing member; the thickness of the encapsulation layer is between 0.1 mm and 0.6 mm, and the refractive index of the encapsulation layer is between 1.4 and 1.6; adjacent to each other The distance between the central optical axes of the two light-emitting diodes is between 2 mm and 6 mm. 如請求項1所述的背光裝置,其中,各個所述發光二極體的寬度介於0.1公釐(mm)至0.4公釐(mm),各個所述發光二極體的長度介於0.1公釐(mm)至0.4公釐(mm),各個所述發光二極體的高度介於0.05公釐(mm)至0.2公釐(mm);所述第一透明本體的厚度介於0.1公釐(mm)至2公釐(mm),所述第二透明本體的厚度介於0.1公釐(mm)至2公釐(mm);各個所述第一角錐結構的任一個底邊的長度介於10微米(μm)至100微米(μm);各個所述第一角錐結構相對於所述第一內側面的高度介於10微米(μm)至50微米(μm),各個所述反射結構的外徑介於30微米(μm)至500微米(μm);各個所述第二角錐結構的任一個底邊的長度介於10微米(μm)至100微米(μm),各個所述第二角錐結構相對於所述第二內側面的高度介於10微米(μm)至50微米(μm)。The backlight device of claim 1, wherein the width of each of the light emitting diodes is between 0.1 millimeters (mm) and 0.4 millimeters (mm), and the length of each of the light emitting diodes is between 0.1 mm centimeters (mm) to 0.4 millimeters (mm), the height of each of the light-emitting diodes is between 0.05 millimeters (mm) to 0.2 millimeters (mm); the thickness of the first transparent body is between 0.1 millimeters (mm) to 2 millimeters (mm), the thickness of the second transparent body ranges from 0.1 millimeters (mm) to 2 millimeters (mm); the length of any bottom edge of each of the first pyramid structures is between 0.1 millimeters (mm) and 2 millimeters (mm); from 10 micrometers (μm) to 100 micrometers (μm); the height of each of the first pyramid structures relative to the first inner side surface is between 10 micrometers (μm) to 50 micrometers (μm), and the height of each of the reflective structures is The outer diameter is between 30 micrometers (μm) and 500 micrometers (μm); the length of any bottom edge of each of the second pyramid structures is between 10 micrometers (μm) and 100 micrometers (μm), and each of the second pyramid structures has a length between 10 micrometers (μm) and 100 micrometers (μm). The height of the structure relative to the second inner side is between 10 micrometers (μm) and 50 micrometers (μm).

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