TWI393896B - The light emitting diode wafer temperature measurement system and measurement method - Google Patents
- ️Sun Apr 21 2013
Info
-
Publication number
- TWI393896B TWI393896B TW98137866A TW98137866A TWI393896B TW I393896 B TWI393896 B TW I393896B TW 98137866 A TW98137866 A TW 98137866A TW 98137866 A TW98137866 A TW 98137866A TW I393896 B TWI393896 B TW I393896B Authority
- TW
- Taiwan Prior art keywords
- emitting diode
- light
- temperature
- measuring
- current Prior art date
- 2009-11-06
Links
- 238000009529 body temperature measurement Methods 0.000 title claims description 4
- 238000000691 measurement method Methods 0.000 title description 3
- 238000012545 processing Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 27
- 238000012360 testing method Methods 0.000 claims description 18
- 238000012544 monitoring process Methods 0.000 claims description 4
- 210000004508 polar body Anatomy 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Landscapes
- Led Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
本發明係與發光二極體(light-emitting diode,LED)之量測有關,特別是關於一種發光二極體之晶片溫度量測系統及量測方法。The invention relates to the measurement of a light-emitting diode (LED), in particular to a wafer temperature measuring system and a measuring method for a light-emitting diode.
溫度是影響發光二極體之發光效率與使用壽命的關鍵因素。當一發光二極體受到電流功率影響下,該發光二極體之接面溫度亦會隨之升高,一旦長時間或持續增加之高溫影響則會改變材料之半導體接面特性,因此發光二極體之製成產品需設置有散熱功能之模組元件以避免高溫效應影響元件品質;然而,對於具有高功率操作特性之發光二極體,在長時間高電流的作用下,二極體接面溫度更會快速的增加,其累積熱能之速度往往不及散熱元件之散熱速度,使得一般高功率發光二極體往往因高溫影響而改變元件內部之材料特性,造成其發光效率降低及使用壽命衰減。因此,無論是低功率或高功率之運作條件,一發光二極體在受到驅動而正常發光之後的溫度,係為判別該發光二極體之性能的重要依據。Temperature is a key factor affecting the luminous efficiency and service life of light-emitting diodes. When a light-emitting diode is affected by current power, the junction temperature of the light-emitting diode will also increase, and the long-term or continuously increasing high-temperature effect will change the semiconductor junction characteristics of the material, so that the light-emitting diode In the case of a polar body, a module component with a heat dissipation function is required to prevent the high temperature effect from affecting the component quality; however, for a light emitting diode having high power operation characteristics, the diode is connected under the action of a long time and a high current. The surface temperature will increase rapidly, and the speed of accumulated thermal energy is often less than the heat dissipation speed of the heat dissipating component, so that the general high-power light-emitting diode often changes the material properties inside the component due to the influence of high temperature, resulting in a decrease in luminous efficiency and a decay in service life. . Therefore, regardless of the operating conditions of low power or high power, the temperature of a light-emitting diode after being driven to emit light is an important basis for judging the performance of the light-emitting diode.
由“LED照明標準及品質研發聯盟”擬定之“LED熱阻量測標準草案”,提出了量測發光二極體之接面溫度的方法,係先在一待測之發光二極體上施加一不會使其產生自發熱之量測電流,其建議範圍係在100μA至5mA之間;接著測量該發光二極體之順向電壓,為一初始順向電壓VF0 ;再以一加熱電流替代該量測電流而驅動該發光二極體,待達到熱穩定狀態後,快速地再以該量測電流替代該加熱電流而驅動該發光二極體,並測量其對應之順向電壓,為一工作順向電壓VFSS ;由於在一固定電流驅動之下,發光二極體之溫度係與其順向電壓呈線性關係,因此該發光二極體具有一順向電壓與溫度之關係係數K,最後可利用該係數K、該發光二極體之初始接面溫度TJ0 ,以及前述測量到的該等順向電壓VF0 、VFSS ,代入下列三方程式,計算出在受到該加熱電流驅動之後,該發光二極體之接面溫度TJ :The "LED Thermal Resistance Measurement Standard Draft" drafted by the "LED Lighting Standard and Quality R&D Alliance" proposes a method for measuring the junction temperature of a light-emitting diode, which is first applied to a light-emitting diode to be tested. A measurement current that does not cause self-heating, the recommended range is between 100μA and 5mA; then the forward voltage of the light-emitting diode is measured as an initial forward voltage V F0 ; and then a heating current Substituting the measuring current to drive the light emitting diode, after the thermal stable state is reached, the measuring current is quickly replaced by the measuring current to drive the light emitting diode, and the corresponding forward voltage is measured, a working forward voltage V FSS ; since the temperature of the light emitting diode is linearly related to the forward voltage thereof under a fixed current driving, the light emitting diode has a coefficient K of a forward voltage and a temperature, Finally, the coefficient K, the initial junction temperature T J0 of the light-emitting diode, and the measured forward voltages V F0 , V FSS are substituted into the following three equations to calculate that after being driven by the heating current , Junction temperature of the light emitting diode T J:
ΔVF =|VF0 -VFSS |;ΔV F =|V F0 -V FSS |;
ΔTJ =K×ΔVF ;ΔT J = K × ΔV F ;
TJ =TJ0 +ΔTJ 。T J = T J0 + ΔT J .
前述量測發光二極體接面溫度之方法中,求得該係數K之方法為先將該發光二極體置於一溫控箱中,控制其初始溫度Ti 穩定在接近室溫狀態,如25℃,並施予該發光二極體不會使其產生自發熱之該量測電流,隨即測量該發光二極體之順向電壓,為一室溫電壓值VFi ;接著使該溫控箱中的溫度增加到一典型高溫Th ,待達到熱穩定狀態後,測量該發光二極體之順向電壓,為一高溫電壓值VFh ;最後將前述該等電壓值與溫度代入下列一計算式,可求得該係數K:In the foregoing method for measuring the junction temperature of the light-emitting diode, the method for determining the coefficient K is to first place the light-emitting diode in a temperature control box, and control the initial temperature T i to be stabilized at a near-room temperature state. For example, at 25 ° C, and applying the light-emitting diode does not cause the self-heating measurement current, and then measuring the forward voltage of the light-emitting diode, which is a room temperature voltage value V Fi ; The temperature in the control box is increased to a typical high temperature T h . After the thermal stability state is reached, the forward voltage of the light emitting diode is measured as a high temperature voltage value V Fh ; finally, the aforementioned voltage value and temperature are substituted into the following A calculation formula can be used to obtain the coefficient K:
然而,前述該量測發光二極體接面溫度之方法,其主要的缺點在於並無具體之量測系統以供實際施行該量測方法;其再一缺點在於其所建議之量測電流係在100μA至5mA之間,意即,在該方法所建議的範圍內決定之量測電流有50倍之差距,而不同正常發光功率運作之差異,不同的發光二極體所適用之量測電流應不相同,若選用了不恰當的量測電流,例如一旦所供應之電流不足驅動功率而非位於實際發光二極體之正常工作特性曲線範圍,會造成量測到的電壓有不穩定的現象,因而影響所求得之該係數K,進而影響了計算出該LED溫度的準確性。However, the above-mentioned method for measuring the junction temperature of the light-emitting diode has the main disadvantage that there is no specific measurement system for actually performing the measurement method; another disadvantage is that the recommended current system is recommended. Between 100μA and 5mA, meaning that the measured current is within 50 times of the range recommended by the method, and the difference between different normal luminous power operations, the measuring current applicable to different LEDs It should be different. If an inappropriate measurement current is selected, for example, if the supplied current is insufficient for the driving power and not within the normal operating characteristic curve of the actual light-emitting diode, the measured voltage may be unstable. Therefore, the coefficient K obtained is affected, which in turn affects the accuracy of calculating the temperature of the LED.
換言之,前述該量測發光二極體接面溫度之方法,仍有其不足之處,而有待改進。In other words, the method for measuring the junction temperature of the light-emitting diode has the disadvantages and needs to be improved.
有鑑於上述缺失,本發明之主要目的在於提供一種發光二極體之晶片溫度量測系統及量測方法,可具體地、簡便地,且準確地量測出在一發光二極體受到驅動而正常發光之後,該發光二極體之晶片溫度。In view of the above-mentioned deficiencies, the main object of the present invention is to provide a wafer temperature measuring system and a measuring method for a light-emitting diode, which can specifically, simply and accurately measure the driving of a light-emitting diode. The wafer temperature of the light-emitting diode after normal light emission.
為達成上述目的,依據本發明技術思想所提供之一種發光二極體之晶片溫度量測系統,包含有一電源供應裝置,係用以提供給待測之一發光二極體一量測電流;一溫控裝置,係供以放置該發光二極體,並提供給該發光二極體一可調節的環境溫度;一測試裝置,包含有一驅動單元與一切換電路,該驅動單元係用以提供該發光二極體正常發光所需之功率,而該切換電路係用以於該驅動單元與該電源供應裝置之間切換,使其中之一電性連接該發光二極體;以及一處理裝置,係與該電源供應裝置、該溫控裝置,以及該測試裝置電性連接,並藉由程式控制該電源供應裝置提供之電流、該溫控裝置提供之溫度,以及該測試裝置之切換電路於該驅動單元與該電源供應裝置之間的切換,該處理裝置更係用以量測該發光二極體之順向電壓,並藉由程式將該順向電壓轉換出該發光二極體之晶片溫度。藉由上述該量測系統,可具體地量測到一發光二極體之順向電壓,進而得知該發光二極體之晶片溫度。上述發光二極體之晶片溫度量測系統中,該處理裝置可包含有一量測單元與一處理單元,該量測單元係電性連接該發光二極體,可用以量測該發光二極體之順向電壓,該處理單元係與該電源供應裝置、該溫控裝置,以及該測試裝置電性連接,並對該等裝置進行控制。In order to achieve the above object, a wafer temperature measuring system for a light-emitting diode according to the technical idea of the present invention includes a power supply device for supplying a current to a light-emitting diode to be tested; a temperature control device for placing the light emitting diode and providing an adjustable ambient temperature to the light emitting diode; a test device comprising a driving unit and a switching circuit for providing the light emitting device The switching diode is configured to switch between the driving unit and the power supply device to electrically connect the light emitting diode to the light emitting diode; and a processing device And the power supply device, the temperature control device, and the test device are electrically connected, and the current supplied by the power supply device, the temperature provided by the temperature control device, and the switching circuit of the test device are controlled by the program Switching between the unit and the power supply device, the processing device is further configured to measure the forward voltage of the light emitting diode, and the program converts the forward voltage The wafer temperature of the light emitting diode. With the above measurement system, the forward voltage of a light-emitting diode can be specifically measured, and the wafer temperature of the light-emitting diode can be known. In the above-mentioned wafer temperature measuring system of the LED, the processing device may include a measuring unit and a processing unit, the measuring unit is electrically connected to the LED, and the LED may be used to measure the LED. The processing unit is electrically connected to the power supply device, the temperature control device, and the test device, and controls the devices.
上述發光二極體之晶片溫度量測系統中,該處理裝置更有一人機介面,可用以記錄該處理裝置接收到之訊號所對應之該發光二極體之順向電壓的數值,以及記錄該溫控裝置提供該發光二極體之環境溫度,並可隨時顯示出兩者之關係曲線,用以監控量測過程;藉此,繁複且冗長的量測過程,可利用該人機介面的記錄功能,而更簡便地完成。In the above-mentioned wafer temperature measuring system of the light-emitting diode, the processing device further has a human-machine interface, which can be used to record the value of the forward voltage of the light-emitting diode corresponding to the signal received by the processing device, and record the The temperature control device provides the ambient temperature of the light-emitting diode, and can display the relationship between the two at any time to monitor the measurement process; thereby, the complicated and lengthy measurement process can utilize the record of the human-machine interface Features are easier to accomplish.
依據本發明技術思想所提供之一種發光二極體之晶片溫度量測方法,係先找出待測之一發光二極體之一最佳量測電流;接著,在提供給該發光二極體該最佳量測電流之情況下,改變該發光二極體之晶片溫度,並量測該發光二極體之順向電壓,而得到該發光二極體之順向電壓與晶片溫度的關係特性;最後,可在該發光二極體於正常驅動功率條件下,即時切換至提供給該發光二極體該最佳量測電流之情況下,量測該發光二極體之順向電壓,並利用該關係特性,得知該發光二極體於正常驅動功率下所造成之晶片溫度改變。According to the technical idea of the present invention, a method for measuring a wafer temperature of a light-emitting diode first finds an optimum current of one of the light-emitting diodes to be tested; and then supplies the light-emitting diode to the light-emitting diode. In the case of the optimal current measurement, the wafer temperature of the light-emitting diode is changed, and the forward voltage of the light-emitting diode is measured to obtain the relationship between the forward voltage of the light-emitting diode and the wafer temperature. Finally, the forward voltage of the light emitting diode can be measured under the condition that the light emitting diode is switched to the optimal measuring current supplied to the light emitting diode under normal driving power conditions, and Using this relationship characteristic, the wafer temperature change caused by the light-emitting diode under normal driving power is known.
上述發光二極體之晶片溫度量測方法中,找出該發光二極體之最佳量測電流之程序,係可先依照該發光二極體的功率,在一範圍之電流區間內,等間距地設定複數個量測電流;接著,連續地提供給該發光二極體該等量測電流,並分別量測該發光二極體對應於各該量測電流之順向電壓;再計算前述該等量測電流中,相鄰兩量測電流所對應之該等發光二極體之順向電壓的差,為一電壓差值;最後,可將該等量測電流中,該電壓差值小於一標準值者,其中之最小電流判定為該發光二極體之最佳量測電流。In the method for measuring the temperature of the above-mentioned light-emitting diode, the procedure for finding the optimum current of the light-emitting diode can be first according to the power of the light-emitting diode, in a range of current range, etc. Setting a plurality of measurement currents at intervals; then, continuously supplying the measurement currents to the light-emitting diodes, and respectively measuring the forward voltages of the light-emitting diodes corresponding to the respective measurement currents; In the measured currents, the difference between the forward voltages of the light-emitting diodes corresponding to the two adjacent currents is a voltage difference; finally, the voltage difference may be measured in the measured currents. If the value is less than a standard value, the minimum current is determined as the optimum current of the light-emitting diode.
有關本發明所提供之發光二極體之晶片溫度量測系統及量測方法的詳細構造、特點、組裝或使用方式,將於後續的實施方式詳細說明中予以描述。然而,在本發明領域中具有通常知識者應能瞭解,該等詳細說明以及實施本發明所列舉的特定實施例,僅係用於說明本發明,並非用以限制本發明之專利申請範圍。Detailed construction, features, assembly or use of the wafer temperature measuring system and measuring method of the light-emitting diode provided by the present invention will be described in the detailed description of the subsequent embodiments. However, it should be understood by those of ordinary skill in the art that the present invention is not limited by the scope of the invention.
以下將藉由所列舉之實施例配合隨附之圖式,詳細說明本發明之技術內容及特徵,其中:第一圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之示意圖;第二圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之測試裝置的電路示意圖,顯示其處於第一位置之態樣;第三圖係類同第二圖,惟顯示本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之測試裝置處於第二位置之態樣;第四圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之第一人機介面的示意圖;第五圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之第二人機介面的示意圖;第六圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測方法之第一個步驟到第二個步驟之方塊圖;以及第七圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測方法之第三個步驟之方塊圖。The technical content and features of the present invention will be described in detail below with reference to the accompanying drawings, wherein: FIG. 1 is a wafer temperature of a light-emitting diode according to a preferred embodiment of the present invention. A schematic diagram of a test device for a wafer temperature measurement system of a light-emitting diode according to a preferred embodiment of the present invention, showing a state in which it is in a first position; Similar to the second figure, the test device of the wafer temperature measuring system of the light emitting diode provided by the preferred embodiment of the present invention is in the second position; the fourth figure is a preferred embodiment of the present invention. A schematic diagram of a first human interface of a wafer temperature measuring system of a light emitting diode provided; a fifth figure is a second person of a wafer temperature measuring system for a light emitting diode according to a preferred embodiment of the present invention FIG. 6 is a block diagram of a first step to a second step of a method for measuring a temperature of a light-emitting diode according to a preferred embodiment of the present invention; and a seventh diagram of the present invention a better The third step of the block diagram of a method of measuring a temperature of a wafer of light emitting diodes provided in the embodiment.
請參閱第一圖至第三圖,本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統10,包含有一電源供應裝置20、一溫控裝置30、一量測單元40、一測試裝置50,以及一處理單元60。Referring to the first to third embodiments, a wafer temperature measuring system 10 for a light emitting diode according to a preferred embodiment of the present invention includes a power supply device 20, a temperature control device 30, and a measuring unit 40. , a test device 50, and a processing unit 60.
該電源供應裝置20係為一可提供1mA以下電流之裝置,並可與待測之一發光二極體70電性連接,用以提供給該發光二極體70穩定的直流電流。The power supply device 20 is a device capable of supplying a current of less than 1 mA, and is electrically connected to one of the light-emitting diodes 70 to be tested for providing a stable direct current to the light-emitting diode 70.
該溫控裝置30包含有一恆溫箱32與一溫控器34,該溫控器34可控制該恆溫箱32內部之溫度,且其精確度可達1℃以下;該發光二極體70係被放置於該恆溫箱32內部,因而該溫控裝置30可提供給該發光二極體70穩定且可調節的環境溫度。The temperature control device 30 includes an oven 32 and a temperature controller 34, the temperature controller 34 can control the temperature inside the oven 32, and the accuracy thereof can be less than 1 ° C; the light-emitting diode 70 is Placed inside the incubator 32, the temperature control device 30 can provide a stable and adjustable ambient temperature for the illuminating diode 70.
該量測單元40,係一可用以量測電壓之裝置,例如示波器;該量測單元40係與該發光二極體70電性連接,用以量測該發光二極體70之順向電壓,並輸出對應之訊號。The measuring unit 40 is a device for measuring voltage, such as an oscilloscope. The measuring unit 40 is electrically connected to the LEDs 70 for measuring the forward voltage of the LEDs 70. And output the corresponding signal.
該測試裝置50包含有一驅動單元52,以及二切換電路54;該驅動單元52可提供給該發光二極體70正常發光所需之電源,而該等切換電路54可於如第二圖所示意之第一位置,以及如第三圖所示意之第二位置之間切換,俾使該電源供應裝置20與該發光二極體70電性連接,並提供給該發光二極體70一最佳量測電流IM ,或使該驅動單元52與該發光二極體70電性連接,並提供給該發光二極體70一驅動電流IH 。The test device 50 includes a driving unit 52 and two switching circuits 54. The driving unit 52 can supply power to the LEDs 70 for normal illumination, and the switching circuits 54 can be as shown in the second figure. The first position and the second position as shown in the third figure are switched, so that the power supply device 20 is electrically connected to the light-emitting diode 70 and provided to the light-emitting diode 70. The current I M is measured, or the driving unit 52 is electrically connected to the LEDs 70 and supplied to the LEDs 70 for a driving current I H .
請參閱各圖式,該處理單元60包含有一如第四圖所示之第一人機介面62,以及一如第五圖所示之第二人機介面64,且該處理單元60係利用如GPIB介面之通訊傳輸匯流排與該電源供應裝置20電性連接,並利用如RS-232介面之通訊傳輸協定與該溫控裝置30之溫控器34、該量測單元40,以及該測試裝置50之驅動單元52與切換電路54電性連接;該處理單元60可藉由如LabVIEW等開發程式所開發之該等人機介面52、54控制該電源供應裝置20提供之電流、該溫控裝置30之恆溫箱32內部的溫度,以及該測試裝置50之驅動單元52與切換電路54;再者,該處理單元60更可接收該量測單元40輸出之對應該發光二極體70之順向電壓的訊號,並藉由程式將該訊號轉換出該發光二極體之晶片溫度。Referring to the drawings, the processing unit 60 includes a first human interface 62 as shown in the fourth figure, and a second human interface 64 as shown in the fifth figure, and the processing unit 60 utilizes The communication transmission bus of the GPIB interface is electrically connected to the power supply device 20, and utilizes a communication transmission protocol such as an RS-232 interface, a thermostat 34 of the temperature control device 30, the measurement unit 40, and the test device. The driving unit 52 of the 50 is electrically connected to the switching circuit 54. The processing unit 60 can control the current supplied by the power supply device 20 by the human-machine interfaces 52 and 54 developed by a development program such as LabVIEW. The temperature control device The temperature inside the incubator 32 of the 30, and the driving unit 52 of the testing device 50 and the switching circuit 54; further, the processing unit 60 can further receive the output of the measuring unit 40 corresponding to the illuminating diode 70 The signal of the voltage, and the signal is converted by the program to the temperature of the wafer of the light-emitting diode.
值得一提的是,本發明所提供之量測系統10中,該處理單元60主要係以發揮如上述之控制及運算功能為主,並不限定如本實施例第一圖所示之單一電腦處理裝置;更甚者,亦可以一具有控制、運算,以及量測功能之處理裝置取代本實施例之該量測單元40與該處理單元60。It is to be noted that, in the measurement system 10 provided by the present invention, the processing unit 60 is mainly used to perform the control and calculation functions as described above, and is not limited to a single computer as shown in the first embodiment of the present embodiment. The processing device; moreover, the measuring unit 40 and the processing unit 60 of the embodiment may be replaced by a processing device having a control, an operation, and a measuring function.
藉由前述該量測系統10,該發光二極體可在受到該驅動單元52於正常發光功率驅動狀態下,藉由該切換電路54即時切換至與該電源供應裝置20電性連接,即可量測該發光二極體之晶片溫度,請參閱第六圖與第七圖,其量測方法有三個步驟:第一個步驟是要找出該發光二極體70之最佳量測電流。With the above-mentioned measuring system 10, the LED can be electrically switched to the power supply device 20 by the switching circuit 54 when the driving unit 52 is driven by the normal lighting power. For measuring the temperature of the wafer of the LED, please refer to the sixth and seventh figures. The measurement method has three steps: the first step is to find the optimum current of the LED 70.
首先,依照該發光二極體70的功率,在0.1mA至5mA之範圍內,選擇一範圍較小之電流區間,並於該區間內等間距地設定複數個量測電流;接著,利用該溫控裝置30提供給置於其恆溫箱32內部之該發光二極體70穩定的環境溫度,係為一第一初始溫度Ti ,通常設定為接近室溫之25~30℃,因該恆溫箱32可使其內部維持於所設定之溫度,而可將當時該發光二極體70之晶片溫度視為該第一初始溫度Ti ;同時,利用電性連接於該發光二極體70之該電源供應裝置20,連續提供給該發光二極體70該等量測電流,並利用該量測單元40量測該發光二極體70之順向電壓,再計算出相鄰量測電流對應的順向電壓之間的差,為一電壓差值;依據發光二極體之電流對電壓的特性曲線可知,量測電流越大時,該電壓差值會越小,意即,所量測到的電壓越穩定;然而,使用越大的量測電流卻會使該發光二極體70操作在高功率特性,而越可能使該發光二極體70產生自發熱;因此,將該等量測電流中,該電壓差值小於一標準值者,其中之最小電流判定為該發光二極體之最佳量測電流IM 。First, according to the power of the light-emitting diode 70, in a range of 0.1 mA to 5 mA, a range of current ranges is selected, and a plurality of measurement currents are equally spaced in the interval; and then, the temperature is utilized. The ambient temperature of the light-emitting diode 70 provided by the control device 30 to the inside of the incubator 32 is a first initial temperature T i , which is usually set to be close to room temperature of 25 to 30 ° C, because the incubator The internal temperature of the light-emitting diode 70 can be regarded as the first initial temperature T i ; and the electrical connection to the light-emitting diode 70 The power supply device 20 continuously supplies the measured current to the light-emitting diode 70, and measures the forward voltage of the light-emitting diode 70 by using the measuring unit 40, and then calculates the corresponding current of the measuring current. The difference between the forward voltages is a voltage difference; according to the characteristic curve of the current of the light-emitting diodes to the voltage, the larger the measuring current is, the smaller the voltage difference is, that is, the measured value is The more stable the voltage is; however, the larger the current is measured, the more The light-emitting diode 70 is operated at a high power characteristic, and the LED element 70 is more likely to generate self-heating; therefore, among the measured currents, the voltage difference is less than a standard value, the smallest of which The current is determined as the optimum measurement current I M of the light-emitting diode.
前述該量測單元40會輸出對應所量測到之電壓的訊號至該處理單元60,藉由其內部程式進行該等電壓差值之計算,以及該發光二極體70之最佳量測電流的判別,並將該最佳量測電流IM 之數值顯示於該第一人機介面62之一量測電流欄621。The measuring unit 40 outputs a signal corresponding to the measured voltage to the processing unit 60, and the internal voltage program calculates the voltage difference and the optimal current of the LED 70. The determination is performed, and the value of the optimal measurement current I M is displayed on the measurement current column 621 of the first human interface 62.
第二個步驟是要得到在提供給該發光二極體70該最佳量測電流之情況下,該發光二極體70之順向電壓與晶片溫度的關係特性。The second step is to obtain the relationship between the forward voltage of the light-emitting diode 70 and the wafer temperature in the case where the optimum current is supplied to the light-emitting diode 70.
在得知待測之該發光二極體70之最佳量測電流IM 之後,同樣地,利用該溫控裝置30提供給該發光二極體70該第一初始溫度Ti ,並視為當時該發光二極體70之溫度;同時,藉由該處理單元60控制該電源供應裝置20提供給該發光二極體70該最佳量測電流IM ,以及控制該量測單元40開始量測該發光二極體70之順向電壓,並將量測到的電壓值顯示於該第一人機介面62之一電壓顯示欄622;接著,藉由該處理單元60控制該溫控裝置30,將其提供給該發光二極體70之溫度逐漸提高至一典型高溫Th ,通常設定為100~110℃;在將該恆溫箱32內部溫度由該第一初始溫度Ti 提高至該典型高溫Th 的過程中,設定多數個介於該第一初始溫度Ti 與該典型高溫Th 之間的量測溫度,並於該恆溫箱32加溫至其內部溫度達到各該量測溫度時,暫停提高該恆溫箱32內部溫度而使其維持於該量測溫度,待足以使該發光二極體70之晶片溫度等同於該量測溫度之時間後,量取該發光二極體70之順向電壓,再使該恆溫箱32繼續加溫,如此進行至該發光二極體70之晶片溫度到達該典型高溫Th ,並將各該量測溫度,以及於該量測溫度之下量測到的順向電壓值,紀錄於該第一人機介面62上之一數據表624中,並同時以該人機介面62上之一監控圖625顯示出該發光二極體70之順向電壓與晶片溫度的關係曲線;藉由該監控圖625顯示之曲線可隨時監控該發光二極體70之順向電壓變化,由於發光二極體之順向電壓與晶片溫度係呈線性關係,因而可利用該數據表624所記錄到之數據,得知當該發光二極體70之晶片溫度為該第一初始溫度Ti 時,其順向電壓係為一第一初始電壓值Vi ,當該發光二極體70之晶片溫度為典型高溫Th 時,其順向電壓係為一高溫電壓值Vh ,再藉由該處理單元60內部之程式,將前述量測到之數據代入以下一第一方程式,可計算出該發光二極體70之順向電壓與晶片溫度之關係係數k:After learning the optimal measurement current I M of the light-emitting diode 70 to be tested, the first initial temperature T i is also supplied to the light-emitting diode 70 by the temperature control device 30, and is regarded as At the same time, the temperature of the light-emitting diode 70 is controlled; at the same time, the processing unit 60 controls the power supply device 20 to supply the optimum current I M to the light-emitting diode 70, and controls the amount of the measuring unit 40 to start. Measuring the forward voltage of the light-emitting diode 70, and displaying the measured voltage value in a voltage display field 622 of the first human-machine interface 62; then, the temperature control device 30 is controlled by the processing unit 60. The temperature supplied to the light-emitting diode 70 is gradually increased to a typical high temperature T h , which is usually set to 100 to 110 ° C; the internal temperature of the incubator 32 is raised from the first initial temperature T i to the typical During the high temperature T h , a plurality of measured temperatures between the first initial temperature T i and the typical high temperature T h are set, and the oven 32 is heated until the internal temperature reaches each of the measured temperatures. Suspending the internal temperature of the oven 32 to maintain the temperature at the measurement temperature. After the time of the wafer temperature of the light-emitting diode 70 is equal to the measured temperature, the forward voltage of the light-emitting diode 70 is measured, and then the oven 32 is further heated, so that the light-emitting diode is The wafer temperature of the polar body 70 reaches the typical high temperature T h , and each of the measured temperature and the forward voltage value measured under the measured temperature are recorded on the first human interface 62 The data in the data table 624 and the one of the monitors 625 on the human interface 62 show the relationship between the forward voltage of the LEDs 70 and the temperature of the wafer; the curve displayed by the monitor 625 can be monitored at any time. The forward voltage of the light-emitting diode 70 changes, and since the forward voltage of the light-emitting diode is linear with the temperature of the wafer, the data recorded by the data table 624 can be used to know when the light-emitting diode is used. When the wafer temperature of 70 is the first initial temperature T i , the forward voltage is a first initial voltage value V i , and the forward voltage of the light-emitting diode 70 when the wafer temperature is a typical high temperature T h system is a high-temperature voltage V h, and then by the processing unit 60 Section of the program, the amount of the measured data is substituted into the following first equation, calculated along the light emitting diode 70 of the voltage versus k wafer temperature coefficient of:
為使量測更加準確,亦可藉由該等量測溫度所對應之順向電壓的變化,將該發光二極體之順向電壓與晶片溫度呈現之曲線關係,以統計方式分析回歸曲線,得出線性條件對應之上述k值。In order to make the measurement more accurate, the curve of the forward voltage of the light-emitting diode and the temperature of the wafer can be statistically analyzed by the change of the forward voltage corresponding to the measured temperature, and the regression curve is statistically analyzed. The above k value corresponding to the linear condition is obtained.
第三個步驟則可量測在該發光二極體70受到該驅動單元52驅動而正常發光之後,該發光二極體70之晶片溫度。The third step can measure the wafer temperature of the light-emitting diode 70 after the light-emitting diode 70 is driven by the driving unit 52 to emit light normally.
首先,在環境溫度為一第二初始溫度T0 之情況下,將該發光二極體70設於該測試裝置50,並先使該切換電路54處於該第一位置,即該發光二極體70係電性連接該電源供應裝置20;接著由該處理單元60控制該電源供應裝置20提供上述第一個步驟所得之該最佳量測電流IM 給該發光二極體70,並控制該量測單元40開始量測該發光二極體70之順向電壓,同時顯示於該第二人機介面64之一電壓顯示欄642,以及紀錄於該第二人機介面64之一數據表643中;接下來,該處理單元60會控制該切換電路54啟動而切換到該第二位置,使該驅動單元52取代該電源供應裝置20而與該發光二極體70電性連接,該處理單元60並會控制該驅動單元52提供給該發光二極體70於正常運作所需之功率;如此一來,該發光二極體70之晶片溫度會逐漸升高,因而該發光二極體70之順向電壓會隨之產生線性變化,待預先設定於該人機介面54之一時間設定欄645之足以使該發光二極體70達熱穩定之時間後,該處理單元60會控制該切換電路54快速地再回復到該第一位置,而使該發光二極體70與該電源供應裝置20電性連接。First, in the case that the ambient temperature is a second initial temperature T 0 , the LED 6 is disposed in the testing device 50, and the switching circuit 54 is first placed in the first position, that is, the LED The power supply device 20 is electrically connected to the power supply device 20; the power supply device 20 is controlled by the processing unit 60 to provide the optimal measurement current I M obtained in the first step to the light emitting diode 70, and the The measuring unit 40 starts measuring the forward voltage of the LEDs 70, and displays them in a voltage display column 642 of the second human interface 64 and a data table 643 recorded in the second human interface 64. Next, the processing unit 60 controls the switching circuit 54 to be activated to switch to the second position, so that the driving unit 52 is electrically connected to the light emitting diode 70 instead of the power supply device 20, the processing unit 60, and the power required by the driving unit 52 for the normal operation of the light-emitting diode 70 is controlled; thus, the temperature of the wafer of the light-emitting diode 70 is gradually increased, and thus the light-emitting diode 70 is The forward voltage will change linearly with it. The processing unit 60 controls the switching circuit 54 to quickly return to the first position after the time setting bar 645 of the man-machine interface 54 is set to be sufficient for the LED to be thermally stable. The light emitting diode 70 is electrically connected to the power supply device 20.
在前述過程中,該數據表643會記錄到該量測單元40所量測到的數值,包括一開始環境溫度為該第二初始溫度T0 時,該發光二極體70之順向電壓為一第二初始電壓值VF0 ,以及最後該切換電路54回復到該第一位置時,該發光二極體70之順向電壓為一工作電壓值VFS ;最後,藉由該處理單元60內部之程式,利用以下一第二方程式:In the foregoing process, the data table 643 records the value measured by the measuring unit 40, and includes a forward voltage of the light emitting diode 70 when the initial ambient temperature is the second initial temperature T 0 . a second initial voltage value V F0 , and finally the switching circuit 54 returns to the first position, the forward voltage of the light emitting diode 70 is an operating voltage value V FS ; finally, by the processing unit 60 The program uses the following second equation:
TS =T0 +k×(VFS -VF0 );T S =T 0 +k×(V FS -V F0 );
將該第二初始溫度T0 、該第二初始電壓值VF0 、該工作電壓值VFS ,以及該係數k代入該第二方程式,計算出在該發光二極體70受到該驅動單元52驅動而正常發光之後,該發光二極體70之晶片溫度TS 。Substituting the second initial temperature T 0 , the second initial voltage value V F0 , the operating voltage value V FS , and the coefficient k into the second equation, calculating that the light emitting diode 70 is driven by the driving unit 52 The wafer temperature T S of the light-emitting diode 70 after normal light emission.
藉由前述該發光二極體之晶片溫度量測系統10,以及其量測方法,可利用如LabVIEW等具有強大資料擷取與監控功能的開發程式,開發出多種人機介面,與該量測系統10之所有儀器硬體作溝通,以輔助進行繁複又冗長的量測過程;再者,藉由找出待測發光二極體之最佳量測電流,更可使計算出之晶片溫度更加準確。The wafer temperature measuring system 10 of the light emitting diode and the measuring method thereof can develop a plurality of human-machine interfaces by using a development program having powerful data acquisition and monitoring functions such as LabVIEW, and the measurement All the instrument hardware of the system 10 communicates to assist in the complicated and lengthy measurement process; furthermore, by finding the best measurement current of the LED to be tested, the calculated wafer temperature can be further improved. accurate.
最後,必須再次說明,本發明於前揭實施例中所揭露的構成元件,僅為舉例說明,並非用來限制本案之範圍,其他等效元件的替代或變化,亦應為本案之申請專利範圍所涵蓋。Finally, it is to be noted that the constituent elements disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention, and alternative or variations of other equivalent elements should also be the scope of the patent application of the present application. Covered.
10...發光二極體之晶片溫度量測系統10. . . LED temperature measuring system for light emitting diode
20...電源供應裝置20. . . Power supply unit
30...溫控裝置30. . . Temperature control device
32...恆溫箱32. . . temperate box
34...溫控器34. . . thermostat
40...量測單元40. . . Measuring unit
50...測試裝置50. . . Test device
52...驅動單元52. . . Drive unit
54...切換電路54. . . Switching circuit
60...處理單元60. . . Processing unit
62...第一人機介面62. . . First human machine interface
621...量測電流欄621. . . Measuring current bar
622...電壓顯示欄622. . . Voltage display
624...數據表624. . . data sheet
625...監控圖625. . . Monitoring chart
64...第二人機介面64. . . Second human interface
642...電壓顯示欄642. . . Voltage display
643...數據表643. . . data sheet
545...時間設定欄545. . . Time setting bar
70...發光二極體70. . . Light-emitting diode
第一圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之示意圖;The first figure is a schematic diagram of a wafer temperature measuring system for a light emitting diode according to a preferred embodiment of the present invention;
第二圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之測試裝置的電路示意圖,顯示其處於第一位置之態樣;2 is a circuit diagram of a test device for a wafer temperature measurement system of a light-emitting diode according to a preferred embodiment of the present invention, showing a state in which it is in a first position;
第三圖係類同第二圖,惟顯示本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之測試裝置處於第二位置之態樣;The third figure is similar to the second figure, but shows that the test device of the wafer temperature measuring system of the light-emitting diode according to a preferred embodiment of the present invention is in the second position;
第四圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之第一人機介面的示意圖;FIG. 4 is a schematic diagram of a first human-machine interface of a wafer temperature measuring system for a light-emitting diode according to a preferred embodiment of the present invention; FIG.
第五圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測系統之第二人機介面的示意圖;FIG. 5 is a schematic diagram showing a second human interface of a wafer temperature measuring system for a light emitting diode according to a preferred embodiment of the present invention; FIG.
第六圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測方法之第一個步驟到第二個步驟之方塊圖;以及FIG. 6 is a block diagram showing a first step to a second step of a method for measuring a temperature of a wafer of a light-emitting diode according to a preferred embodiment of the present invention;
第七圖為本發明一較佳實施例所提供之發光二極體之晶片溫度量測方法之第三個步驟之方塊圖。FIG. 7 is a block diagram showing a third step of a method for measuring a wafer temperature of a light-emitting diode according to a preferred embodiment of the present invention.
10...發光二極體之晶片溫度量測系統10. . . LED temperature measuring system for light emitting diode
20...電源供應裝置20. . . Power supply unit
30...溫控裝置30. . . Temperature control device
32...恆溫箱32. . . temperate box
34...溫控器34. . . thermostat
40...量測單元40. . . Measuring unit
60...處理單元60. . . Processing unit
70...發光二極體70. . . Light-emitting diode
Claims (10)
一種發光二極體之晶片溫度量測系統,包含有:一電源供應裝置,係用以提供給該發光二極體一量測電流;一溫控裝置,具有一恆溫箱及一溫控器,該恆溫箱係供以放置該發光二極體,該溫控器係用以控制該恆溫箱內部的溫度;一測試裝置,包含有一驅動單元及一切換電路,該驅動單元係用以驅動該發光二極體而使其發光;該切換電路係用以於該驅動單元與該電源供應裝置之間切換,使其中之一電性連接該發光二極體;以及一處理裝置,係與該電源供應裝置、該溫控裝置,以及該測試裝置電性連接,藉由程式對該等裝置進行下列控制:a)控制該電源供應裝置提供之電流;b)控制該溫控裝置的溫控器;以及c)控制該測試裝置之切換電路於該驅動單元與該電源供應裝置之間的切換;該處理裝置更係用以量測該發光二極體之順向電壓,並藉由程式將該順向電壓轉換出該發光二極體之晶片溫度。 A wafer temperature measuring system for a light emitting diode includes: a power supply device for supplying a current to the light emitting diode; and a temperature control device having an incubator and a temperature controller, The thermostat is configured to place the LED, the thermostat is used to control the temperature inside the incubator; a test device includes a driving unit and a switching circuit for driving the illumination The switching circuit is configured to switch between the driving unit and the power supply device to electrically connect one of the light emitting diodes; and a processing device and the power supply The device, the temperature control device, and the test device are electrically connected, and the device controls the device to: a) control the current supplied by the power supply device; b) control the temperature controller of the temperature control device; c) controlling the switching between the switching circuit of the test device and the power supply device; the processing device is further configured to measure the forward voltage of the light emitting diode, and the program is used to forward the forward voltage A down converter wafer temperature of the light emitting diode. 如申請專利範圍第1項所述之發光二極體之晶片溫度量測系統,其中該處理裝置包含有一量測單元與一處理單元,該量測單元係電性連接該發光二極體,用以量測 該發光二極體之順向電壓,該處理單元係與該電源供應裝置、該溫控裝置,以及該測試裝置電性連接,並對該等裝置進行控制。 The wafer temperature measuring system of the light emitting diode according to the first aspect of the invention, wherein the processing device comprises a measuring unit and a processing unit, wherein the measuring unit is electrically connected to the light emitting diode, Measure The processing unit is electrically connected to the power supply device, the temperature control device, and the test device, and controls the devices. 如申請專利範圍第1項所述之發光二極體之晶片溫度量測系統,其中該處理裝置更包含有一人機介面,其具有一數值表,係用以記錄該溫控裝置提供該發光二極體之環境溫度以及該環境溫度所對應該發光二極體之順向電壓的數值。 The wafer temperature measuring system of the light-emitting diode according to claim 1, wherein the processing device further comprises a human-machine interface, which has a numerical value table for recording the temperature control device to provide the light-emitting diode The ambient temperature of the polar body and the value of the forward voltage of the LED that corresponds to the ambient temperature. 如申請專利範圍第3項所述之發光二極體之晶片溫度量測系統,其中該人機介面更具有一監控圖,係用以顯示該數值表中環境溫度與順向電壓之曲線關係,以供監控量測過程。 The wafer temperature measuring system of the light-emitting diode according to claim 3, wherein the human-machine interface has a monitoring chart for displaying a relationship between an ambient temperature and a forward voltage in the numerical value table. For monitoring measurement process. 一種發光二極體之晶片溫度量測方法,包含有下列步驟:a)找出待測之一發光二極體之一最佳量測電流;b)在提供給該發光二極體該最佳量測電流之情況下,改變該發光二極體之晶片溫度,並量測該發光二極體之順向電壓,而得到該發光二極體之順向電壓與晶片溫度的關係曲線,對應該關係曲線之斜率具有一關係係數k;以及c)改變該發光二極體之電流至一驅動電流,再將該發光二極體之電流切換為該最佳量測電流,量測該發光二極體之順向電壓,並利用該關係特性,得知該發光二極體之驅動電流所對應之晶片溫度。 A method for measuring a wafer temperature of a light-emitting diode comprises the steps of: a) finding an optimum current for measuring one of the light-emitting diodes to be tested; b) optimizing the light-emitting diode for the light-emitting diode In the case of measuring the current, changing the temperature of the wafer of the light-emitting diode and measuring the forward voltage of the light-emitting diode to obtain a curve of the forward voltage of the light-emitting diode and the temperature of the wafer, corresponding to The slope of the relationship curve has a relationship coefficient k; and c) changing the current of the LED to a driving current, and then switching the current of the LED to the optimal current, measuring the LED The forward voltage of the body, and using the relationship characteristic, the temperature of the wafer corresponding to the driving current of the light-emitting diode is known. 如申請專利範圍第5項所述之發光二極體之晶片溫度量測方法,其中步驟a)包含有下列程序:a1 )依照該發光二極體的功率,在一範圍之電流區間內,等間距地設定複數個量測電流;a2 )連續地提供給該發光二極體該等量測電流,並分別量測該發光二極體對應於各該量測電流之順向電壓;a3 )計算在步驟a2 )的過程中,相鄰兩量測電流所對應之該等發光二極體之順向電壓的差,為一電壓差值;以及a4 )將該等量測電流中,該電壓差值小於一標準值者,其中之最小電流判定為該發光二極體之最佳量測電流。The temperature measurement method of applying a light emitting diode chip in item 5 of the patent range, wherein step a) comprises the following procedure: a 1) in accordance with the power of the light emitting diode is within a range of the current interval, setting a plurality of equally spaced measuring current; a 2) is continuously supplied to the light-emitting diode such measuring currents, respectively, and measuring the light emitting diode corresponding to each of the measured currents a forward voltage; A 3 ) calculating, in the process of step a 2 ), the difference between the forward voltages of the light-emitting diodes corresponding to the two adjacent currents is a voltage difference; and a 4 ) measuring the currents Where the voltage difference is less than a standard value, wherein the minimum current is determined as the optimum measured current of the light emitting diode. 如申請專利範圍第5項所述之發光二極體之晶片溫度量測方法,其中步驟b)包含有下列程序:b1 )提供給該發光二極體穩定的環境溫度,係為一第一初始溫度Ti ,俾使該發光二極體達熱穩定狀態後,其晶片溫度即為該第一初始溫度Ti ;b2 )提供給該發光二極體該最佳量測電流;b3 )逐漸提高該發光二極體之環境溫度至一典型高溫Th ,使得該發光二極體之晶片溫度亦逐步提高至該典型高溫Th ;以及b4 )自該第一初始溫度Ti 至該典型高溫Th 的過程中,量測該發光二極體之順向電壓與環境溫度,而得到該發光二極體之順向電壓與晶片溫度的關係特性。The method for measuring a wafer temperature of a light-emitting diode according to claim 5, wherein the step b) comprises the following procedure: b 1 ) providing a stable ambient temperature to the light-emitting diode, which is a first The initial temperature T i , after the light-emitting diode reaches a thermal stable state, the wafer temperature is the first initial temperature T i ; b 2 ) is supplied to the light-emitting diode to optimize the current; b 3 Gradually increasing the ambient temperature of the light-emitting diode to a typical high temperature T h such that the wafer temperature of the light-emitting diode is gradually increased to the typical high temperature T h ; and b 4 ) from the first initial temperature T i to During the typical high temperature T h , the forward voltage of the light emitting diode and the ambient temperature are measured to obtain the relationship between the forward voltage of the light emitting diode and the wafer temperature. 如申請專利範圍第7項所述之發光二極體之晶片 溫度量測方法,其步驟b)中得到該發光二極體之順向電壓與晶片溫度之關係係數k,係利用環境溫度為該第一初始溫度Ti ,以及該典型高溫Th 時,量測該發光二極體之順向電壓,所分別得到之一第一初始電壓值Vi ,以及一高溫電壓值Vh ,藉由以下一第一方程式所求得: The method for measuring a wafer temperature of a light-emitting diode according to claim 7 is as follows: in step b), a coefficient k of a forward voltage of the light-emitting diode and a wafer temperature is obtained, and the ambient temperature is used. When the first initial temperature T i and the typical high temperature T h are measured, the forward voltage of the light emitting diode is measured, and a first initial voltage value V i and a high temperature voltage value V h are respectively obtained by The following first equation is obtained: 如申請專利範圍第5項所述之發光二極體之晶片溫度量測方法,係更用以量測在該發光二極體受到該驅動電流而正常發光之後,該發光二極體之晶片溫度,因而在步驟c)中,係使該發光二極體正常發光,待該發光二極體晶片溫度因而升高後,快速地改提供給該發光二極體該最佳量測電流,再量測其順向電壓。 The method for measuring the temperature of a light-emitting diode according to the fifth aspect of the invention is further for measuring a wafer temperature of the light-emitting diode after the light-emitting diode is normally illuminated by the driving current. Therefore, in step c), the light-emitting diode is normally illuminated, and after the temperature of the light-emitting diode wafer is raised, the optimum current is quickly supplied to the light-emitting diode, and then the amount is measured. Measure its forward voltage. 如申請專利範圍第9項所述之發光二極體之晶片溫度量測方法,步驟c之前,先量測當時該發光二極體之環境溫度,視為該發光二極體之一第二初始溫度T0 ,並同時以該最佳量測電流量測該發光二極體之順向電壓,為一第二初始電壓值VF0 ,則在步驟c)量測到該發光二極體之順向電壓,為一工作電壓值VFS 後,利用該第二初始溫度T0 、該第二初始電壓值VF0 、該工作電壓值VFS ,以及該係數k,藉由以下一第二方程式,計算出在該發光二極體受到驅動而正常發光之後,該發光二極體之晶片溫度TS :TS =T0 +k×(VFS -VF0 )。The method for measuring the temperature of the light-emitting diode according to claim 9 of the patent application, before measuring step c, first measuring the ambient temperature of the light-emitting diode at the time, and is regarded as a second initial of the light-emitting diode Temperature T 0 , and simultaneously measuring the forward voltage of the light-emitting diode with the optimal measured current as a second initial voltage value V F0 , measuring the smoothness of the light-emitting diode in step c) After the voltage is an operating voltage value V FS , using the second initial temperature T 0 , the second initial voltage value V F0 , the operating voltage value V FS , and the coefficient k, by using the following second equation, The wafer temperature T S of the light-emitting diode is calculated after the light-emitting diode is driven to emit light normally: T S = T 0 + k × (V FS - V F0 ).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW98137866A TWI393896B (en) | 2009-11-06 | 2009-11-06 | The light emitting diode wafer temperature measurement system and measurement method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW98137866A TWI393896B (en) | 2009-11-06 | 2009-11-06 | The light emitting diode wafer temperature measurement system and measurement method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201116835A TW201116835A (en) | 2011-05-16 |
TWI393896B true TWI393896B (en) | 2013-04-21 |
Family
ID=44934983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW98137866A TWI393896B (en) | 2009-11-06 | 2009-11-06 | The light emitting diode wafer temperature measurement system and measurement method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI393896B (en) |
Citations (5)
* Cited by examiner, † Cited by third partyPublication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040207424A1 (en) * | 1998-08-27 | 2004-10-21 | The Micromanipulator Company, Inc. | High resolution analytical probe station |
TW200506375A (en) * | 2003-05-16 | 2005-02-16 | Tokyo Electron Ltd | Inspection apparatus |
TWI286602B (en) * | 2002-10-31 | 2007-09-11 | Harald Philipp | Charge transfer capacitive position sensor |
TW200913298A (en) * | 2007-09-13 | 2009-03-16 | Asia Optical Co Inc | Photo-sensing system and method capable of adjusting working voltage according to the variation of temperature |
TWI312221B (en) * | 2006-06-22 | 2009-07-11 | Kao Golden Cit |
-
2009
- 2009-11-06 TW TW98137866A patent/TWI393896B/en active
Patent Citations (5)
* Cited by examiner, † Cited by third partyPublication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040207424A1 (en) * | 1998-08-27 | 2004-10-21 | The Micromanipulator Company, Inc. | High resolution analytical probe station |
TWI286602B (en) * | 2002-10-31 | 2007-09-11 | Harald Philipp | Charge transfer capacitive position sensor |
TW200506375A (en) * | 2003-05-16 | 2005-02-16 | Tokyo Electron Ltd | Inspection apparatus |
TWI312221B (en) * | 2006-06-22 | 2009-07-11 | Kao Golden Cit | |
TW200913298A (en) * | 2007-09-13 | 2009-03-16 | Asia Optical Co Inc | Photo-sensing system and method capable of adjusting working voltage according to the variation of temperature |
Also Published As
Publication number | Publication date |
---|---|
TW201116835A (en) | 2011-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20110084701A1 (en) | 2011-04-14 | Testing of leds |
CN101701854B (en) | 2011-02-16 | Method for detecting junction temperature of chip of LED lamp |
KR101209082B1 (en) | 2012-12-06 | Real time aging test equipment for LED device |
US8471565B2 (en) | 2013-06-25 | System and method for output flux measurement of light emitting diode |
US8075182B2 (en) | 2011-12-13 | Apparatus and method for measuring characteristic and chip temperature of LED |
CN101266280A (en) | 2008-09-17 | High-power light-emitting diode thermal resistance and junction temperature test system |
CN103162856B (en) | 2016-03-23 | A kind of contactless great power LED method for testing junction temperature |
CN103076551B (en) | 2015-10-21 | A kind of LED lamp thermal resistance forms proving installation and method |
US20110031903A1 (en) | 2011-02-10 | System and method for estimating the junction temperature of a light emitting diode |
CN102221667B (en) | 2013-05-15 | Measuring device and method for diode chip |
CN102072783B (en) | 2012-08-29 | Method for testing junction temperature of LED |
EP2523008B1 (en) | 2015-07-22 | Method of characterising an LED device |
TWI392882B (en) | 2013-04-11 | Apparatus and method for measuring diode chip |
US8773158B2 (en) | 2014-07-08 | Inspection method |
CN107024648A (en) | 2017-08-08 | LED junction temperature measurement device and method based on impulse method |
CN103411702A (en) | 2013-11-27 | Device for non-contact measurement of junction temperature of white LED by use of peak wavelength displacement method |
US7839158B2 (en) | 2010-11-23 | Method of detecting abnormality in burn-in apparatus |
Della Corte et al. | 2020 | Temperature sensing characteristics and long term stability of power LEDs used for voltage vs. Junction temperature measurements and related procedure |
TWI393896B (en) | 2013-04-21 | The light emitting diode wafer temperature measurement system and measurement method |
CN111999630A (en) | 2020-11-27 | Method and system for testing working junction temperature of power device |
Poppe et al. | 2010 | Emerging standard for thermal testing of power LEDs and its possible implementation |
CN217717585U (en) | 2022-11-01 | Thermal interface material thermal performance detection system and detection equipment |
WO2010049882A2 (en) | 2010-05-06 | Lighting unit with temperature protection |
KR101552205B1 (en) | 2015-09-11 | Method for calculated thermal resistance of LED |
CN104006898A (en) | 2014-08-27 | Method for representing junction temperature of GaN-based LED through weighting width |