TWI484496B - Storage medium and floating detection method - Google Patents

儲存媒體及浮動偵測方法Storage medium and floating detection method

本發明係有關於一種儲存媒體，特別是有關於一種可偵測傳輸線是否為一浮動狀態的儲存媒體。The present invention relates to a storage medium, and more particularly to a storage medium capable of detecting whether a transmission line is in a floating state.

一般而言，儲存媒體可分成揮發性記憶體以及非揮發性記憶體。當電源供應中斷後，記憶體所儲存的資料便會消失的記憶體稱為揮發性記憶體。相反地，當電源供應中斷後，記憶體所儲存的資料並不會因而消失的記憶體稱為非揮發性記憶體。In general, storage media can be divided into volatile memory as well as non-volatile memory. When the power supply is interrupted, the memory in which the data stored in the memory disappears is called volatile memory. Conversely, when the power supply is interrupted, the memory in which the data stored in the memory does not disappear is called non-volatile memory.

不論是揮發性記憶體或是非揮發性記憶體，其內部均具有許多傳輸線(如字元線及位元線)。透過每一傳輸線，便可存取相對應的記憶胞。然而，當某一傳輸線發生異常(如斷線)時，便無法正常地存取異常傳輸線所對應的記憶胞。習知的解決方式係利用一備用傳輸線取代異常傳輸線。該備用傳輸線亦具有許多備用記憶胞，用以取代異常傳輸線所對應的記憶胞。Whether it is volatile memory or non-volatile memory, it has many transmission lines (such as word lines and bit lines) inside. Through each transmission line, the corresponding memory cell can be accessed. However, when an abnormality occurs in a transmission line (such as a disconnection), the memory cell corresponding to the abnormal transmission line cannot be normally accessed. A conventional solution is to replace the anomalous transmission line with a spare transmission line. The alternate transmission line also has a plurality of spare memory cells to replace the memory cells corresponding to the abnormal transmission line.

雖然備用傳輸線及備用記憶胞可取代異常的傳輸線及記憶胞，但異常傳輸線所對應的記憶胞仍具有電荷，並將成為一雜訊源，影響相鄰或所有傳輸線所對應的記憶胞所儲存的電荷，進而造成儲存媒體無法正常地存取資料。Although the alternate transmission line and the spare memory cell can replace the abnormal transmission line and the memory cell, the memory cell corresponding to the abnormal transmission line still has a charge, and will become a noise source, affecting the storage of the memory cell corresponding to the adjacent or all transmission lines. The charge, which in turn causes the storage medium to fail to access the data normally.

本發明提供一種儲存媒體，包括複數記憶胞、複數傳 輸線、一驅動模組以及一浮動偵測模組。記憶胞用以儲存資料。傳輸線耦接記憶胞。驅動模組透過傳輸線，存取記憶胞。浮動偵測模組包括，一重置單元、複數連接器以及一偵測器。重置單元耦接一偵測線。每一連接器耦接於一相對應傳輸線與偵測線之間。偵測器根據該偵測線的位準，得知傳輸線之至少一者的狀態是否為一浮動狀態。The invention provides a storage medium, which comprises a plurality of memory cells and a plurality of memories A transmission line, a drive module, and a floating detection module. Memory cells are used to store data. The transmission line is coupled to the memory cell. The driver module accesses the memory cell through the transmission line. The floating detection module includes a reset unit, a plurality of connectors, and a detector. The reset unit is coupled to a detection line. Each connector is coupled between a corresponding transmission line and the detection line. The detector knows whether the state of at least one of the transmission lines is a floating state according to the level of the detection line.

本發明另提供一種浮動偵測方法，適用於一儲存媒體。儲存媒體包括複數記憶胞、複數傳輸線、一驅動模組以及一浮動偵測模組。驅動模組透過傳輸線，存取記憶胞。傳輸線透過複數連接器，耦接到一偵測線。本發明之浮動偵測方法包括：設定偵測線的位準；判斷偵測線的位準是否等於一預設位準；以及當偵測線的位準不等於預設位準時，表示傳輸線之至少一者的狀態為一浮動狀態。The invention further provides a floating detection method suitable for a storage medium. The storage medium includes a plurality of memory cells, a plurality of transmission lines, a driving module, and a floating detection module. The driver module accesses the memory cell through the transmission line. The transmission line is coupled to a detection line through a plurality of connectors. The floating detection method of the present invention includes: setting a level of the detection line; determining whether the level of the detection line is equal to a preset level; and indicating that the transmission line is when the level of the detection line is not equal to the preset level At least one of the states is a floating state.

為讓本發明之特徵和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：In order to make the features and advantages of the present invention more comprehensible, the preferred embodiments are described below, and are described in detail with reference to the accompanying drawings.

第1圖為本發明之儲存媒體之一可能示意圖。如圖所示，儲存媒體100包括一驅動模組110、傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m 、記憶胞M₀₀ ~M_mn 、RM₀₀ ~RM_mk 以及一浮動偵測模組140。在本實施例中，傳輸線RWL₀ ~RWL_k 係為備用傳輸線，用以取代傳輸線WL₀ ~WL_n 中異常的傳輸線。Figure 1 is a schematic illustration of one of the storage media of the present invention. As shown, the storage medium 100 includes a drive module 110, transmission lines WL ₀ to WL _n , RWL ₀ to RWL _k , BL ₀ to BL _m , memory cells M ₀₀ to M _mn , RM ₀₀ to RM _{mk ,} and a float. The detection module 140. In the present embodiment, the transmission lines RWL ₀ to RWL _k are alternate transmission lines for replacing abnormal transmission lines in the transmission lines WL ₀ to WL _n .

舉例而言，當測試人員判斷得知傳輸線WL₀ 發生異常時，測試人員便以傳輸線RWL₀ 取代傳輸線WL₀ ，其中傳 輸線RWL₀ 所耦接的記憶胞RM₀₀ ~RM_m0 也將取代傳輸線WL₀ 耦接的記憶胞M₀₀ ~M_m0 。For example, when the tester is determined that the transmission line WL ₀ abnormal, the tester then to the transmission line RWL ₀ substituent transmission lines WL _0, wherein the transmission line RWL ₀ the coupled memory cell RM ₀₀ ~ RM _m0 will replace the transmission lines WL ₀ The coupled memory cells M ₀₀ ~M _m0 .

驅動模組110透過傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m ，存取記憶胞M₀₀ ~M_mn 、RM₀₀ ~RM_mk 。在本實施例中，驅動模組110包括一列驅動器120以及一行驅動器130。列驅動器120用以觸發傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 。在本實施例中，傳輸線WL₀ ~WL_n 係為字元線(wordline)，而傳輸線RWL₀ ~RWL_k 係為備用字元線(redundancy wordline)。The drive module 110 accesses the memory cells M ₀₀ to M _mn and RM ₀₀ to RM _mk through the transmission lines WL ₀ to WL _n , RWL ₀ to RWL _k , and BL ₀ to BL _m . In this embodiment, the driving module 110 includes a column of drivers 120 and a row of drivers 130. The column driver 120 is used to trigger the transmission lines WL ₀ to WL _n , RWL ₀ to RWL _k . In the present embodiment, the transmission lines WL ₀ to WL _n are word lines, and the transmission lines RWL ₀ to RWL _k are redundant word lines.

本發明並不限定列驅動器120的內部架構。在一可能實施例中，列驅動器120具有一解碼單元121以及輸出級OT₀ ~OT_n 、ROT₀ ~ROT_k 。解碼單元121解碼一位址信號101，並根據解碼結果，控制輸出級OT₀ ~OT_n 、ROT₀ ~ROT_k ，用以觸發傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k ，也就是控制傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 的狀態。The present invention does not limit the internal architecture of the column driver 120. In a possible embodiment, the column driver 120 has a decoding unit 121 and output stages OT ₀ ~OT _n , ROT ₀ ~ROT _k . The decoding unit 121 decodes the address signal 101, and according to the decoding result, controls the output stages OT ₀ ~ OT _n , ROT ₀ ~ ROT _k for triggering the transmission lines WL ₀ ~ WL _n , RWL ₀ ~ RWL _k , that is, controlling the transmission line The state of WL ₀ ~ WL _n , RWL ₀ ~ RWL _k .

在本實施例中，輸出級OT₀ ~OT_n 、ROT₀ ~ROT_k 係由一P型電晶體以及一N型電晶體所構成，但並非用以限制本發明。以輸出級OT₀ 為例，P型電晶體與N型電晶體係串聯於操作電壓V_DD 與V_NN 之間。在一可能實施例中，操作電壓V_DD 大於操作電壓V_NN ，並且操作電壓V_NN 可能為一負值。In the present embodiment, the output stages OT ₀ ~ OT _n , ROT ₀ ~ ROT _k are composed of a P-type transistor and an N-type transistor, but are not intended to limit the present invention. Taking the output stage OT ₀ as an example, the P-type transistor and the N-type transistor system are connected in series between the operating voltages V _DD and V _NN . In a possible embodiment, the operating voltage V _{DD is} greater than the operating voltage V _NN and the operating voltage V _NN may be a negative value.

第2圖為傳輸線發生異常狀態示意圖。事件1係指P型電晶體210與N型電晶體220的閘極發生斷路(open)。事件2A係指P型電晶體210的源極發生斷路。事件2B係指P型電晶體210的汲極發生斷路。事件3係指傳輸線WL₀ 發生斷路。事件4A係指N型電晶體220的汲極發生斷路。事件4B係指N型電晶體220的源極發生斷路。當事件1~4B之任一者發生時，列驅動器120將無法正常地控制傳輸線WL₀ 的狀態。因此，傳輸線WL₀ 的狀態為一浮動狀態。Figure 2 is a schematic diagram of the abnormal state of the transmission line. Event 1 refers to the opening of the gate of the P-type transistor 210 and the N-type transistor 220. Event 2A refers to the disconnection of the source of the P-type transistor 210. Event 2B refers to the occurrence of an open circuit of the P-type transistor 210. Event 3 means that the transmission line WL ₀ is broken. Event 4A refers to the tripping of the drain of the N-type transistor 220. Event 4B refers to the disconnection of the source of the N-type transistor 220. When any of the events 1 to 4B occurs, the column driver 120 will not be able to normally control the state of the transmission line WL ₀ . Therefore, the state of the transmission line WL ₀ is a floating state.

請回到第1圖，行驅動器130透過傳輸線BL₀ ~BL_m ，擷取記憶胞M₀₀ ~M_mn 、RM₀₀ ~RM_mk 所儲存的資料，或是將資料寫入記憶胞M₀₀ ~M_mn 、RM₀₀ ~RM_mk 。在一可能實施例中，行驅動器130係為一偵測放大器(sense amplifier)，用以偵測並放大相對應記憶胞所儲存的資料。在本實施例中，傳輸線BL₀ ~BL_m 係為位元線(bitline)。Returning to FIG. 1, the row driver 130 captures the data stored in the memory cells M ₀₀ ~M _mn , RM ₀₀ ~RM _mk through the transmission lines BL ₀ BLBL _m , or writes the data into the memory cells M ₀₀ ~M _Mn , RM ₀₀ ~RM _mk . In a possible embodiment, the row driver 130 is a sense amplifier for detecting and amplifying data stored in the corresponding memory cell. In the present embodiment, the transmission lines BL ₀ to BL _m are bit lines.

記憶胞M₀₀ ~M_mn 、RM₀₀ ~RM_mk 均具有一開關SW以及一儲存電容Cs。當一傳輸線的狀態發生異常時，耦接該輸線的儲存電容的電荷將影響行驅動器130的擷取結果。舉例而言，當傳輸線WL₀ 發生異常(如斷線)時，列驅動器120無法正常地控制傳輸線WL₀ 的狀態。因此，測試人員利用傳輸線RWL₀ 取代傳輸線WL₀ 。此時，由於傳輸線WL₀ 的狀態為浮動狀態，由於傳輸線WL₀ 所對應的記憶胞M₀₀ ~M_m0 所儲存的電荷可能影響相鄰記憶胞M₀₁ ~M_m1 或是所有記憶胞所儲存的電荷，因此，傳輸線WL₀ 所對應的記憶胞M₀₀ ~M_m0 將成為一雜訊源。The memory cells M ₀₀ ~M _mn and RM ₀₀ ~RM _mk each have a switch SW and a storage capacitor Cs. When an abnormality occurs in the state of a transmission line, the charge of the storage capacitor coupled to the transmission line affects the result of the row driver 130. For example, when an abnormality (such as a disconnection) occurs in the transmission line WL ₀ , the column driver 120 cannot normally control the state of the transmission line WL ₀ . Thus, by using a transmission line tester transmission line RWL ₀ substituted WL _0. At this time, since the state of the transmission line WL ₀ is a floating state, the charge stored in the memory cells M ₀₀ to M _m0 corresponding to the transmission line WL ₀ may affect the memory cells of the adjacent memory cells M ₀₁ to M _m1 or all the memory cells. The charge, therefore, the memory cells M ₀₀ ~M _m0 corresponding to the transmission line WL ₀ will become a noise source.

在本實施例中，浮動偵測模組140偵測傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 的狀態，用以得知傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m 的狀態是否為浮動狀態。若是，則測試人員將儲存媒體100視為不良品。相反地，若傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m 的狀態 不為浮動狀態，則儲存媒體100為良品。In this embodiment, the floating detection module 140 detects the states of the transmission lines WL ₀ to WL _n and RWL ₀ to RWL _k for knowing the transmission lines WL ₀ to WL _n , RWL ₀ to RWL _k , and BL ₀ to BL. Whether the state of _m is floating. If so, the tester treats the storage medium 100 as a defective product. Conversely, if the states of the transmission lines WL ₀ to WL _n , RWL ₀ to RWL _k , and BL ₀ to BL _m are not in a floating state, the storage medium 100 is a good one.

如圖所示，浮動偵測模組140包括一重置單元141、連接器CN₁ ~CN_n 、RCN₀ ~RCN_k 以及一偵測器142。重置單元141耦接一偵測線143，用以在一重置期間，設定偵測線143的位準。As shown, the floating detection module 140 includes a reset unit 141, connectors CN ₁ -CN _n , RCN ₀ ~RCN _{k ,} and a detector 142. The reset unit 141 is coupled to a detection line 143 for setting the level of the detection line 143 during a reset.

本發明並不限定重置單元141的實施方式。在本實施例中，重置單元141係為一P型電晶體144。在一可能實施例中，P型電晶體144係整合於行驅動器130之中。如圖所示，P型電晶體144的閘極接收一重置信號S_RET ，其源極接收一操作電壓VH，其汲極耦接偵測線143。在其它實施例中，重置單元141可為一N型電晶體。The present invention does not limit the implementation of the reset unit 141. In the present embodiment, the reset unit 141 is a P-type transistor 144. In a possible embodiment, the P-type transistor 144 is integrated into the row driver 130. As shown, the gate of the P-type transistor 144 receives a reset signal S _RET , the source of which receives an operating voltage VH, and the drain of which is coupled to the detection line 143. In other embodiments, the reset unit 141 can be an N-type transistor.

連接器CN₀ ~CN_n 及RCN₀ ~RCN_k 耦接於一相對應傳輸線與偵測線143之間。在本實施例中，浮動偵測模組140係用以偵測傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 的狀態，因此，連接器CN₀ ~CN_n 、RCN₀ ~RCN_k 係耦接字元線(如WL₀ ~WL_n 、RWL₀ ~RWL_k )。本發明並不限定連接器CN₀ ~CN_n 、RCN₀ ~RCN_k 的種類。在一可能實施例中，連接器CN₀ ~CN_n 、RCN₀ ~RCN_k 與記憶胞M₀₀ ~RM_mk 內的開關SW均為N型電晶體。The connectors CN ₀ ~ CN _n and RCN ₀ ~ RCN _{k are} coupled between a corresponding transmission line and the detection line 143. In this embodiment, the floating detection module 140 is configured to detect the states of the transmission lines WL ₀ to WL _n and RWL ₀ to RWL _k . Therefore, the connectors CN ₀ to CN _n and RCN ₀ to RCN _k are coupled. Word lines (such as WL ₀ ~ WL _n , RWL ₀ ~ RWL _k ). The present invention does not limit the types of connectors CN ₀ to CN _n and RCN ₀ to RCN _k . In a possible embodiment, the connectors CN ₀ ~ CN _n , RCN ₀ ~ RCN _k and the switches SW in the memory cells M ₀₀ ~ RM _mk are N-type transistors.

以連接器CN₀ 例，N型電晶體145的閘極耦接傳輸線WL₀ ，其汲極耦接偵測線143，其源極接收一操作電壓Vss。在本實施例中，操作電壓Vss小於操作電壓VH。在一可能實施例中，操作電壓Vss係為一接地電壓，或是小於接地電壓。在另一實施例中，操作電壓Vss大於操作電壓V_NN 。在其它實施例中，N型電晶體145的基極接收一基電壓 V_BB 。在一可能實施例中，操作電壓Vss等於基電壓V_BB 。In the case of the connector CN ₀ , the gate of the N-type transistor 145 is coupled to the transmission line WL ₀ , the drain of which is coupled to the detection line 143 , and the source thereof receives an operating voltage Vss . In the present embodiment, the operating voltage Vss is smaller than the operating voltage VH. In a possible embodiment, the operating voltage Vss is a ground voltage or less than the ground voltage. In another embodiment, the operating voltage Vss is greater than the operating voltage _VNN . In other embodiments, the base of the N-type transistor 145 receives a base voltage V _BB . In a possible embodiment, the operating voltage Vss is equal to the base voltage V _BB .

偵測器142根據偵測線143的位準，得知傳輸線WL₀ ~RWL_k 之至少一者的狀態是否為一浮動狀態。第3A圖為本發明之浮動偵測模組140的偵測方式。首先，列驅動器120不觸發傳輸線WL₀ ~RWL_k ，因此，傳輸線WL₀ ~WL_m 及RWL₀ ~RWL_k 為低位準狀態。The detector 142 knows whether the state of at least one of the transmission lines WL ₀ to RWL _k is a floating state according to the level of the detection line 143. FIG. 3A illustrates the detection method of the floating detection module 140 of the present invention. First, the column driver 120 does not trigger the transmission lines WL ₀ to RWL _k , and therefore, the transmission lines WL ₀ to WL _m and RWL ₀ to RWL _k are in a low level state.

在重置期間300，重置信號S_RET 為低位準，因而導通P型電晶體144，使得偵測線143的位準為高位準。當重置信號S_RET 由低位準變化至高位準時，偵測線143的位準應保持在一預設位準。舉例而言，偵測線143的位準應保持在高位準(如符號S_NOR 所示)。然而，當傳輸線WL₀ ~WL_m 及RWL₀ ~RWL_k 之一者的狀態異常時，偵測線143的位準將不等於預設位準。在一可能實施例中，偵測線143的位準可能變化至低位準(如符號S_ER 所示)。During the reset period 300, the reset signal S _RET is at a low level, thereby turning on the P-type transistor 144 such that the level of the detection line 143 is at a high level. When the reset signal S _RET changes from a low level to a high level, the level of the detection line 143 should be maintained at a predetermined level. For example, the level of the detection line 143 should be maintained at a high level (as indicated by the symbol S _NOR ). However, when the state of one of the transmission lines WL ₀ to WL _m and RWL ₀ to RWL _k is abnormal, the level of the detection line 143 will not be equal to the preset level. In a possible embodiment, the level of the detection line 143 may change to a low level (as indicated by the symbol S _ER ).

因此，在一偵測期間310，偵測器142偵測偵測線143的位準。當偵測線143的位準不等於一預設位準時(如符號S_ER 所示)，偵測器142判定傳輸線WL₀ ~WL_m 及RWL₀ ~RWL_k 之至少一者的狀態為浮動狀態。在一可能實施例中，浮動的傳輸線是因事件1、3、4A或4B所造成。Therefore, during a detection period 310, the detector 142 detects the level of the detection line 143. When the level of the detection line 143 is not equal to a predetermined level (as indicated by the symbol S _ER ), the detector 142 determines that the state of at least one of the transmission lines WL ₀ WL WL _m and RWL ₀ ～ RWL _k is a floating state. . In a possible embodiment, the floating transmission line is caused by event 1, 3, 4A or 4B.

第3B圖為本發明之浮動偵測模組140的另一偵測方式。當重置信號S_RET 由高位準變化至低位準時，表示開始設定偵測線143的位準。在偵測線143的位準保持在高位準後，重置信號S_RET 仍保持在低位準。在此例中，雖然P型電晶體144持續導通，但只要傳輸線WL₀ ~WL_m 及RWL₀ ~RWL_k 之至少一者的狀態為浮動狀態時，偵測線143 的位準便不再保持在高位準。如符號S_ER 所示，在偵測期間320，偵測線143的位準將逐漸下降。FIG. 3B illustrates another detection method of the floating detection module 140 of the present invention. When the reset signal S _RET changes from a high level to a low level, it indicates that the level of the detection line 143 is started to be set. After the level of the detection line 143 is maintained at a high level, the reset signal S _RET remains at a low level. In this example, although the P-type transistor 144 is continuously turned on, the level of the detection line 143 is no longer maintained as long as the state of at least one of the transmission lines WL ₀ to WL _m and RWL ₀ to RWL _k is in a floating state. At a high level. As indicated by symbol S _ER , during the detection period 320, the level of the detection line 143 will gradually decrease.

第4圖為本發明之浮動偵測模組140的另一偵測方式。在重置期間400A，重置信號S_RET 為低位準，因而導通P型電晶體144，使得偵測線143的位準S₁₄₃ 為高位準。在重置期間400A後，重置信號S_RET 為高位準，因而不導通P型電晶體144。此時，偵測線143的位準S₁₄₃ 應保持在一預設位準(如高位準)。FIG. 4 is another detection method of the floating detection module 140 of the present invention. During the reset period 400A, the reset signal S _RET is at a low level, thereby turning on the P-type transistor 144 such that the level S ₁₄₃ of the detection line 143 is at a high level. After the reset period 400A, the reset signal S _RET is at a high level, and thus the P-type transistor 144 is not turned on. At this time, the level S _{143 of the} detection line 143 should be maintained at a preset level (such as a high level).

在觸發期間440，列驅動器120觸發傳輸線WL₀ 。此時，連接器CN₀ 被導通。因此，偵測線143的位準S₁₄₃ 逐漸下降。接著，在重置期間400B，P型電晶體144被導通，因此，偵測線143的位準S₁₄₃ 會再上升至一預設位準(如高位準)。接著，在觸發期間450，列驅動器120觸發傳輸線WL₁ 。此時，連接器CN₁ 被導通。因此，偵測線143的位準S₁₄₃ 會再次逐漸下降。During the trigger 440, the column driver 120 to trigger the transmission line WL _0. At this time, the connector CN ₀ is turned on. Therefore, the level S _{143 of the} detection line ₁₄₃ gradually decreases. Then, during the reset period 400B, the P-type transistor 144 is turned on, and therefore, the level S _{143 of the} detection line 143 rises again to a predetermined level (such as a high level). Next, during the trigger period 450, the column driver 120 triggers the transmission line WL ₁ . At this time, the connector CN ₁ is turned on. Therefore, the level S _{143 of the} detection line 143 will gradually decrease again.

偵測器142根據偵測線143的位準S₁₄₃ ，便可判斷出傳輸線WL₀ ~RWL_k 的狀態是否為浮動狀態。在一可能實施例中，偵測器142在偵測期間410A判斷偵測線143的位準S₁₄₃ 。若偵測線143的位準S₁₄₃ 不等於一預設位準，表示事件1、3、4A或4B發生，因而造成傳輸線WL₀ ~RWL_k 之至少一者的狀態為浮動狀態。The detector 142 can determine whether the state of the transmission lines WL ₀ to RWL _k is a floating state based on the level S _{143 of the} detection line 143. In a possible embodiment, the detector 142 determines the level S _{143 of the} detection line 143 during the detection period 410A. If the level S _{143 of the} detection line 143 is not equal to a predetermined level, it indicates that the event 1, 3, 4A or 4B occurs, thereby causing the state of at least one of the transmission lines WL ₀ to RWL _{k to} be in a floating state.

接著，偵測器142在偵測期間410B，判斷偵測線143的位準S₁₄₃ 。若偵測線143的位準S₁₄₃ 等於預設位準，表示事件2A或2B發生，因而造成偵測線143的位準S₁₄₃ 無法下降。因此，測試人員根據偵測器142的偵測結果，便 可得知傳輸線WL₀ ~RWL_k 之至少一者的狀態為浮動狀態。Next, the detector 142 determines the level S _{143 of the} detection line 143 during the detection period 410B. If the level S _{143 of the} detection line 143 is equal to the preset level, it indicates that the event 2A or 2B occurs, and thus the level S _{143 of the} detection line ₁₄₃ cannot be lowered. Therefore, the tester can know that the state of at least one of the transmission lines WL ₀ to RWL _k is a floating state according to the detection result of the detector 142.

在本實施例中，在偵測期間410A、420A、430A中，偵測線143的位準S₁₄₃ 應該等於一預設位準，否則，就表示傳輸線WL₀ ~RWL_k 之至少一者的狀態為浮動狀態。另外，偵測期間410B、420B、430B中，偵測線143的位準S₁₄₃ 應該不等於預設位準，否則，就表示傳輸線WL₀ ~RWL_k 之至少一者的狀態為浮動狀態。In this embodiment, in the detection period 410A, 420A, 430A, the level S _{143 of the} detection line 143 should be equal to a preset level, otherwise, the state of at least one of the transmission lines WL ₀ ~ RWL _k is indicated. It is in a floating state. In addition, in the detection periods 410B, 420B, and 430B, the level S _{143 of the} detection line 143 should not be equal to the preset level; otherwise, the state of at least one of the transmission lines WL ₀ to RWL _k is a floating state.

第5A圖為本發明之浮動偵測模組140的另一偵測方式。第5A圖相似第3圖，不同之處在於第5A圖具有一起始期間520A。起始期間520A早於重置期間500。在起始期間，列驅動器120依序觸發傳輸線WL₀ ~RWL_k 。因此，偵測線143上的位準S₁₄₃ 應該為低位準(如符號S_NOR 所示)。FIG. 5A illustrates another detection method of the floating detection module 140 of the present invention. Figure 5A is similar to Figure 3, except that Figure 5A has a start period 520A. The start period 520A is earlier than the reset period 500. During the start, the column driver 120 sequentially triggers the transmission lines WL ₀ to RWL _k . Accordingly, the detection level S on the line ₁₄₃ 143 be a low level (e.g., symbol S shown _NOR).

接著，在重置期間500，重置信號S_RET 為低位準，因此，偵測線143上的位準S₁₄₃ 將由低位準變化至高位準。當重置信號S_RET 由低位準變化至高位準時，偵測線143的位準應該保持在高位準(如符號S_NOR 所示)。因此，在偵測期間510，偵測器142根據偵測線143的位準S₁₄₃ ，得知是否發生浮動狀態。然而，當偵測線143的位準S₁₄₃ 並未保持在高位準時(如符號S_ER 所示)，表示發生浮動狀態。Then, during the reset period 500, the reset signal S _RET is at a low level, and therefore, the level S ₁₄₃ on the detection line ₁₄₃ will change from a low level to a high level. When the reset signal S _RET changes from a low level to a high level, the level of the detection line 143 should be maintained at a high level (as indicated by the symbol S _NOR ). Therefore, during the detection period 510, the detector 142 determines whether a floating state occurs according to the level S _{143 of the} detection line 143. However, when the level S _{143 of the} detection line 143 is not maintained at the high level (as indicated by the symbol S _ER ), it indicates that a floating state has occurred.

第5B圖為本發明之浮動偵測模組140的另一偵測方式。第5B圖相似第5A圖，不同之處係在第5B圖的起始期間520B，驅動器120同時觸發傳輸線WL₀ ~RWL_k 。由於第5B圖的動作原理與第5A圖相似，故不再贅述。FIG. 5B is another detection manner of the floating detection module 140 of the present invention. Figure 5B is similar to Figure 5A, except that during the start period 520B of Figure 5B, the driver 120 simultaneously triggers the transmission lines WL ₀ ~ RWL _k . Since the operation principle of FIG. 5B is similar to that of FIG. 5A, it will not be described again.

第6圖為本發明之儲存媒體之另一可能實施例。第6圖相似第1圖，不同之處在於，第6圖的重置單元600包 括一電晶體610及一閂鎖器620。在本實施例中，電晶體610係為一P型電晶體，但並非用以限制本發明。在其它實施例中，電晶體610可為一N型電晶體。如圖所示，電晶體610的閘極接收一重置信號S_RET ，其源極接收一操作電壓VH，其汲極耦接偵測線143。Figure 6 is another possible embodiment of the storage medium of the present invention. Fig. 6 is similar to Fig. 1, except that the reset unit 600 of Fig. 6 includes a transistor 610 and a latch 620. In the present embodiment, the transistor 610 is a P-type transistor, but is not intended to limit the invention. In other embodiments, the transistor 610 can be an N-type transistor. As shown, the gate of the transistor 610 receives a reset signal S _RET , the source of which receives an operating voltage VH and the drain of which is coupled to the detection line 143.

閂鎖器620閂鎖偵測線143的位準。在本實施例中，閂鎖器620包括一反相器630以及一電晶體640。反相器630的輸入端及輸出端分別耦接電晶體640的汲極及閘極。電晶體640的源極接收操作電壓VH，其汲極耦接偵測線143。The latch 620 latches the level of the detection line 143. In the present embodiment, the latch 620 includes an inverter 630 and a transistor 640. The input terminal and the output terminal of the inverter 630 are respectively coupled to the drain and the gate of the transistor 640. The source of the transistor 640 receives the operating voltage VH, and its drain is coupled to the detecting line 143.

第7圖為本發明之儲存媒體之另一可能實施例。第7圖相似第1圖，不同之處在於浮動偵測模組700耦接傳輸線BL₀ ~BL_m ，用以判斷傳輸線BL₀ ~BL_m 之至少一者的狀態是否為浮動狀態。由於第7圖的動作原理與第1圖相同，故不再贅述。在一可能實施例中，可利用第6圖所示的重置單元600取代第7圖的重置單元710。在另一實施例中，可將第7圖的浮動偵測模組700應用於第1圖中。因此，儲存媒體將具有兩浮動偵測模組，分別偵測垂直傳輸線BL₀ ~BL_m 及水平傳輸線WL₀ ~WL_n 、RWL₀ ~RWL_k 的狀態。Figure 7 is another possible embodiment of the storage medium of the present invention. Figure 7 is similar to Figure 1, except that the floating detection module 700 is coupled to the transmission lines BL ₀ to BL _m for determining whether the state of at least one of the transmission lines BL ₀ to BL _m is a floating state. Since the operation principle of Fig. 7 is the same as that of Fig. 1, it will not be described again. In a possible embodiment, the reset unit 610 shown in FIG. 6 can be used instead of the reset unit 710 of FIG. In another embodiment, the floating detection module 700 of FIG. 7 can be applied to FIG. Therefore, the storage medium will have two floating detection modules for detecting the states of the vertical transmission lines BL ₀ to BL _m and the horizontal transmission lines WL ₀ to WL _n and RWL ₀ to RWL _k , respectively.

第8A圖為本發明之浮動偵測方法之一可能流程圖。本發明之浮動偵測方法可應用於第1、6及7圖所示的儲存媒體中。為方便說明，以下將以第1圖為例。首先，觸發傳輸線WL₀ ~RWL_k (步驟S800)。本發明並不限定觸發順序。在一可能實施例中，可同時或依序觸發傳輸線WL₀ ~RWL_k 。另外，步驟S800並非必要。在其它實施例中， 可省略步驟S800。FIG. 8A is a possible flowchart of one of the floating detection methods of the present invention. The floating detection method of the present invention can be applied to the storage medium shown in Figures 1, 6, and 7. For convenience of explanation, the following figure will be taken as an example. First, the transmission lines WL ₀ to RWL _{k are} triggered (step S800). The invention does not limit the triggering sequence. In a possible embodiment, the transmission lines WL ₀ to RWL _k can be triggered simultaneously or sequentially. In addition, step S800 is not necessary. In other embodiments, step S800 can be omitted.

接著，設定偵測線143的位準(步驟S810)。在一可能實施例中，可利用一重置單元(如141)，設定偵測線143的位準。接著，判斷偵測線的位準是否等於一預設位準(步驟S820)。Next, the level of the detection line 143 is set (step S810). In a possible embodiment, the level of the detection line 143 can be set by using a reset unit (such as 141). Next, it is determined whether the level of the detection line is equal to a preset level (step S820).

當偵測線143的位準不等於預設位準時，偵測器142輸出一第一偵測結果，表示傳輸線WL₀ ~RWL_k 之至少一者的狀態為一浮動狀態(步驟S830)。相反地，當偵測線143的位準等於預設位準時，偵測器142輸出一第二偵測結果，表示傳輸線WL₀ ~RWL_k 的狀態不為一浮動狀態(步驟S840)。When the level of the detection line 143 is not equal to the preset level, the detector 142 outputs a first detection result indicating that the state of at least one of the transmission lines WL ₀ to RWL _k is a floating state (step S830). Conversely, when the level of the detection line 143 is equal to the preset level, the detector 142 outputs a second detection result indicating that the states of the transmission lines WL ₀ to RWL _k are not in a floating state (step S840).

第8B圖為本發明之浮動偵測方法之另一可能流程圖。第8B圖相似第8A圖，不同之處在於省略步驟S800，並增加步驟S850及S860。當偵測線143的位準等於預設位準時，觸發傳輸線WL₀ ~RWL_k 中之第一傳輸線(步驟S850)，再判斷偵測線143的位準是否等於預設位準(步驟S860)。FIG. 8B is another possible flowchart of the floating detection method of the present invention. Fig. 8B is similar to Fig. 8A except that step S800 is omitted and steps S850 and S860 are added. When the level of the detection line 143 is equal to the preset level, the first transmission line of the transmission lines WL ₀ to RWL _k is triggered (step S850), and it is determined whether the level of the detection line 143 is equal to the preset level (step S860). .

當偵測線143的位準等於預設位準時，表示傳輸線WL₀ ~RWL_k 之至少一者的狀態為一浮動狀態(步驟S830)。當偵測線143的位準不等於預設位準時，表示傳輸線WL₀ ~RWL_k 不為浮動狀態(步驟S840)，因此，回到步驟S810，再次設定偵測線143的位準，並再次判斷偵測線143的位準是否等於預設位準(步驟S820)。When the level of the detection line 143 is equal to the preset level, it indicates that the state of at least one of the transmission lines WL ₀ to RWL _k is a floating state (step S830). When the level of the detection line 143 is not equal to the preset level, it indicates that the transmission lines WL ₀ to RWL _{k are} not in a floating state (step S840), and therefore, returning to step S810, the level of the detection line 143 is set again, and again. It is judged whether the level of the detection line 143 is equal to the preset level (step S820).

當偵測線143的位準等於預設位準時，觸發下一條傳輸線(步驟S850)，並判斷偵測線143的位準是否等於預設 位準(步驟S860)。當偵測線143的位準不等於預設位準，則回到步驟S810，並在步驟S820後，觸發下一條傳輸線，直到所有傳輸線均被觸發過。When the level of the detection line 143 is equal to the preset level, the next transmission line is triggered (step S850), and it is determined whether the level of the detection line 143 is equal to the preset. The level is determined (step S860). When the level of the detection line 143 is not equal to the preset level, the process returns to step S810, and after step S820, the next transmission line is triggered until all the transmission lines are triggered.

除非另作定義，在此所有詞彙(包含技術與科學詞彙)均屬本發明所屬技術領域中具有通常知識者之一般理解。此外，除非明白表示，詞彙於一般字典中之定義應解釋為與其相關技術領域之文章中意義一致，而不應解釋為理想狀態或過分正式之語態。Unless otherwise defined, all terms (including technical and scientific terms) are used in the ordinary meaning Moreover, unless expressly stated, the definition of a vocabulary in a general dictionary should be interpreted as consistent with the meaning of an article in its related art, and should not be interpreted as an ideal state or an overly formal voice.

雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧儲存媒體100‧‧‧Storage media

110‧‧‧驅動模組110‧‧‧Drive Module

140、700‧‧‧浮動偵測模組140, 700‧‧‧Floating detection module

120‧‧‧列驅動器120‧‧‧ column driver

130‧‧‧行驅動器130‧‧‧ line driver

121‧‧‧解碼單元121‧‧‧Decoding unit

101‧‧‧位址信號101‧‧‧ address signal

142‧‧‧偵測器142‧‧‧Detector

210、144、610、640‧‧‧P型電晶體210, 144, 610, 640‧‧‧P type transistor

220、145‧‧‧N型電晶體220, 145‧‧‧N type transistor

141、600、710‧‧‧重置單元141, 600, 710‧ ‧ reset unit

143‧‧‧偵測線143‧‧‧Detection line

300、400A、400B、400C、500‧‧‧重置期間300, 400A, 400B, 400C, 500‧‧‧Reset period

310、320、410A、410B、420A、420B、430A、430B、510‧‧‧偵測期間310, 320, 410A, 410B, 420A, 420B, 430A, 430B, 510‧‧

440、450、460、520A、520B‧‧‧觸發期間440, 450, 460, 520A, 520B‧‧‧ trigger period

600‧‧‧重置單元600‧‧‧Reset unit

620‧‧‧閂鎖器620‧‧‧Latch

630‧‧‧反相器630‧‧‧Inverter

WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m ‧‧‧傳輸線WL ₀ ~ WL _n , RWL ₀ ~ RWL _k , BL ₀ ~ BL _m ‧‧‧ transmission line

M₀₀ ~M_mn 、RM₀₀ ~RM_mk ‧‧‧記憶胞M ₀₀ ~M _mn , RM ₀₀ ~RM _mk ‧‧‧ memory cells

OT₀ ~OT_n 、ROT₀ ~ROT_k ‧‧‧輸出級OT ₀ ~ OT _n , ROT ₀ ~ ROT _k ‧‧‧ output stage

V_DD 、V_NN 、VH、Vss、V_BB ‧‧‧操作電壓V _DD , V _NN , VH , Vss , V _BB ‧ ‧ operating voltage

CN₀ ~CN_n 、RCN₀ ~RCN_k ‧‧‧連接器CN ₀ ~CN _n ,RCN ₀ ~RCN _k ‧‧‧Connector

S_RET ‧‧‧重置信號S _RET ‧‧‧Reset signal

SW‧‧‧開關SW‧‧ switch

S_ER ‧‧‧異常位準S _ER ‧‧‧Abnormal level

Cs‧‧‧儲存電容Cs‧‧‧ storage capacitor

S_NOR ‧‧‧正常位準S _NOR ‧‧‧ normal level

S₁₄₃ ‧‧‧位準S ₁₄₃ ‧‧‧

第1圖為本發明之儲存媒體之一可能示意圖。Figure 1 is a schematic illustration of one of the storage media of the present invention.

第2圖為傳輸線發生異常狀態示意圖。Figure 2 is a schematic diagram of the abnormal state of the transmission line.

第3A、3B、4、5A及5B圖為本發明之浮動偵測模組的可能偵測方式。3A, 3B, 4, 5A and 5B are diagrams of possible detection methods of the floating detection module of the present invention.

第6~7圖為本發明之儲存媒體之其它可能實施例。Figures 6-7 are other possible embodiments of the storage medium of the present invention.

第8A、8B圖為本發明之浮動偵測方法之可能流程圖。8A and 8B are diagrams showing possible flowcharts of the floating detection method of the present invention.

100‧‧‧儲存媒體100‧‧‧Storage media

110‧‧‧驅動模組110‧‧‧Drive Module

140‧‧‧浮動偵測模組140‧‧‧Floating detection module

120‧‧‧列驅動器120‧‧‧ column driver

130‧‧‧行驅動器130‧‧‧ line driver

121‧‧‧解碼單元121‧‧‧Decoding unit

101‧‧‧位址信號101‧‧‧ address signal

144‧‧‧P型電晶體144‧‧‧P type transistor

145‧‧‧N型電晶體145‧‧‧N type transistor

141‧‧‧重置單元141‧‧‧Reset unit

142‧‧‧偵測器142‧‧‧Detector

143‧‧‧偵測線143‧‧‧Detection line

WL₀ ~WL_n 、RWL₀ ~RWL_k 、BL₀ ~BL_m ‧‧‧傳輸線WL ₀ ~ WL _n , RWL ₀ ~ RWL _k , BL ₀ ~ BL _m ‧‧‧ transmission line

M₀₀ ~M_mn 、RM₀₀ ~RM_mk ‧‧‧記憶胞M ₀₀ ~M _mn , RM ₀₀ ~RM _mk ‧‧‧ memory cells

OT₀ ~OT_n 、ROT₀ ~ROT_k ‧‧‧輸出級OT ₀ ~ OT _n , ROT ₀ ~ ROT _k ‧‧‧ output stage

V_DD 、V_NN 、VH、Vss、V_BB ‧‧‧操作電壓V _DD , V _NN , VH , Vss , V _BB ‧ ‧ operating voltage

CN₀ ~CN_n 、RCN₀ ~RCN_k ‧‧‧連接器CN ₀ ~CN _n ,RCN ₀ ~RCN _k ‧‧‧Connector

S_RET ‧‧‧重置信號S _RET ‧‧‧Reset signal

Cs‧‧‧儲存電容Cs‧‧‧ storage capacitor

SW‧‧‧開關SW‧‧ switch