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US6154078A - Semiconductor buffer circuit with a transition delay circuit - Google Patents

  • ️Tue Nov 28 2000

US6154078A - Semiconductor buffer circuit with a transition delay circuit - Google Patents

Semiconductor buffer circuit with a transition delay circuit Download PDF

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Publication number
US6154078A
US6154078A US09/003,832 US383298A US6154078A US 6154078 A US6154078 A US 6154078A US 383298 A US383298 A US 383298A US 6154078 A US6154078 A US 6154078A Authority
US
United States
Prior art keywords
delay circuit
buffer
terminal connected
circuit
input signal
Prior art date
1998-01-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/003,832
Inventor
Eric J. Stave
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Bank NA
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1998-01-07
Filing date
1998-01-07
Publication date
2000-11-28
1998-01-07 Application filed by Micron Technology Inc filed Critical Micron Technology Inc
1998-01-07 Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: STAVE, ERIC J.
1998-01-07 Priority to US09/003,832 priority Critical patent/US6154078A/en
2000-04-25 Priority to US09/557,468 priority patent/US6278310B1/en
2000-11-28 Publication of US6154078A publication Critical patent/US6154078A/en
2000-11-28 Application granted granted Critical
2001-08-13 Priority to US09/928,732 priority patent/US6515529B2/en
2002-12-11 Priority to US10/316,361 priority patent/US6788126B2/en
2016-05-12 Assigned to U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT reassignment U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MICRON TECHNOLOGY, INC.
2016-06-02 Assigned to MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT reassignment MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT PATENT SECURITY AGREEMENT Assignors: MICRON TECHNOLOGY, INC.
2017-06-08 Assigned to U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT reassignment U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Assignors: MICRON TECHNOLOGY, INC.
2018-01-07 Anticipated expiration legal-status Critical
2018-08-23 Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
2019-10-09 Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Status Expired - Lifetime legal-status Critical Current

Links

  • 239000000872 buffer Substances 0.000 title claims abstract description 86
  • 230000007704 transition Effects 0.000 title claims abstract description 85
  • 239000004065 semiconductor Substances 0.000 title claims description 9
  • 239000003990 capacitor Substances 0.000 claims abstract description 55
  • 239000000969 carrier Substances 0.000 claims description 11
  • 238000004891 communication Methods 0.000 claims description 4
  • 238000000034 method Methods 0.000 abstract description 4
  • 238000010586 diagram Methods 0.000 description 23
  • 230000000630 rising effect Effects 0.000 description 19
  • 230000015654 memory Effects 0.000 description 7
  • 239000000758 substrate Substances 0.000 description 6
  • 230000001934 delay Effects 0.000 description 5
  • 230000003111 delayed effect Effects 0.000 description 4
  • 238000004088 simulation Methods 0.000 description 4
  • 230000008901 benefit Effects 0.000 description 3
  • 230000006870 function Effects 0.000 description 3
  • 230000000694 effects Effects 0.000 description 2
  • 238000012986 modification Methods 0.000 description 2
  • 230000004048 modification Effects 0.000 description 2
  • 230000000295 complement effect Effects 0.000 description 1
  • 238000013500 data storage Methods 0.000 description 1
  • 230000007423 decrease Effects 0.000 description 1
  • 238000005516 engineering process Methods 0.000 description 1
  • 230000006872 improvement Effects 0.000 description 1
  • 239000000463 material Substances 0.000 description 1
  • 229910044991 metal oxide Inorganic materials 0.000 description 1
  • 150000004706 metal oxides Chemical class 0.000 description 1

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices

Definitions

  • the present invention is directed generally to input buffer circuits, and, more particularly, to a transition delay circuit for use in input buffer circuits.
  • a buffer circuit which buffers the device input signals before they are communicated to the internal circuitry of the device.
  • a buffer circuit typically adapts the device input signals to internally required signal properties, such as signal voltage levels and transition delays, that must be present for the internal circuitry to operate correctly.
  • FIG. 1 illustrates a prior art buffer 10 constructed using complementary metal oxide semiconductor (CMOS) technology.
  • the buffer 10 is constructed as an inverter, with a p-type transistor 12 and an n-type transistor 14.
  • Input signal IN is input to the gate terminals of the transistor 12 and the transistor 14. If the signal IN exceeds a threshold voltage value, the transistor 14 is turned “on” and output signal OUT has a path to ground through the transistor 14. If the signal IN is below a certain threshold voltage value, the transistor 12 is turned “on” and the signal OUT is connected to VCC through the transistor 12.
  • CMOS complementary metal oxide semiconductor
  • the buffer 10 in FIG. 1 has the disadvantage that it is susceptible to noise and voltage surges.
  • the buffer 10 has the further disadvantage that improper operation of the buffer 10 due to variations in operating conditions cannot be effectively corrected after the buffer 10 is constructed.
  • FIG. 2 illustrates a prior art buffer 16 that was designed to eliminate certain of the disadvantages of the buffer 10 of FIG. 1.
  • the buffer 16 is constructed of a series of inverter circuits 18, 20, 22, and 24 which receive an input signal IN.
  • a p-type MOS capacitor 26 is connected between VCC and the output of the inverter 22.
  • An n-type MOS capacitor is connected between the output of the inverter 22 and GND.
  • the inverters 18, 20, and 22 and the capacitors 26 and 28 comprise a delay circuit 30.
  • the MOS capacitors introduce a delay into the delay circuit 30.
  • a node 29 which is connected to the gate terminals of the capacitors 26 and 28, transitions from a low logic state to a high logic state after a delay introduced by the inverters 18, 20, and 22.
  • the gate terminal of the n-type capacitor 26 pulls majority carriers (electrons) from the substrate causing capacitance to be formed. This capacitance introduces a delay into the delay circuit 30.
  • the node 29 transitions from a high logic state to a low logic state.
  • the gate terminal of the p-type capacitor 28 pulls majority carriers (holes) from the substrate causing capacitance to be formed. This capacitance introduces a delay into the delay circuit 30.
  • the MOS capacitors 26 and 28 provide for an adjustable delay in the delay circuit 30 because they may be "trimmed" of excess material to achieve the desired delay that is introduced by the capacitors 26 and 28.
  • the buffer 16 has the disadvantage that the delay, as measured by the time elapsed between the introduction of the input signal IN to the inverter 18 and the appearance of the output signal OUT at the output of the inverter 24, associated with low to high transitions of the signal IN is not consistent with the delay associated with high to low transitions of the signal IN.
  • transition delay circuit that may be incorporated into a buffer to provide similar low to high and high to low input transition delay times.
  • the present invention is directed to a transition delay circuit which includes a delay circuit that is responsive to an input signal.
  • the delay circuit produces an output signal at a common node.
  • the transition delay circuit also includes a first MOS capacitor connected between the input signal and the common node and a second MOS capacitor connected between the input signal and the common node.
  • the present invention also contemplates a buffer circuit which includes a transition delay circuit and an inverter responsive to the transition delay circuit.
  • a semiconductor device comprising a plurality of buffer circuits having transition delay circuits and a functional circuit responsive to the buffer circuit is also disclosed.
  • the present invention further contemplates a system which includes a processor having at least one buffer circuit, a memory controller having at least one buffer circuit, a plurality of memory devices, each having at least one buffer circuit, a first bus connecting the processor and the memory controller, and a second bus connecting the memory controller and the memory devices.
  • the buffer circuits include a transition delay circuit and an inverter responsive to the transition delay circuit.
  • the present invention also contemplates a method for delaying an input signal to a buffer circuit.
  • the method includes the steps of inputting the input signal to a delay circuit and two MOS capacitors. One of the MOS capacitors is charged to produce a delayed signal and the delayed signal is outputted.
  • the present invention represents a substantial advance over prior buffers. Because the present invention has a feed-forward transition delay circuit, the low to high and high to low transitions of the input signal have approximately the same delays as measured from the time the transitioning input signal is introduced to the buffer and the time the signal appears at the output of the buffer. This unexpected advantage, and other advantages and benefits of the present invention, will become apparent from t:he Detailed Description of the Preferred Embodiments hereinbelow.
  • FIG. 1 is a circuit diagram of a prior art buffer
  • FIG. 2 is a circuit diagram of a prior art buffer with a delay circuit
  • FIG. 3 is a circuit diagram of a semiconductor memory device that includes input buffers
  • FIG. 4 is a circuit diagram of a preferred embodiment of a buffer with transition delay circuit of the present invention.
  • FIG. 5 is a circuit diagram of another preferred embodiment of buffer with a transition delay circuit of the present invention.
  • FIG. 6 is a timing diagram illustrating the operation of the buffer of FIG. 4;
  • FIG. 7 is a timing diagram illustrating a portion of the timing diagram of FIG. 6 in higher resolution
  • FIG. 8 is a timing diagram illustrating the operation of the buffer of FIG. 2 with an inverter added
  • FIG. 9 is a timing diagram illustrating the operation of the buffer of FIG. 5;
  • FIG. 10 is a timing diagram illustrating the operation of the buffer of FIG. 2;
  • FIG. 11 is a timing diagram illustrating the operation of the buffer of FIG 5;
  • FIG. 12 is a timing diagram illustrating the operation of the buffer of FIG. 2.
  • FIG. 13 is a block diagram of a system in which the present invention may be used.
  • FIG. 3 illustrates a semiconductor device 2.
  • the semiconductor device 2 may be any type of semiconductor device, such as, for example, a memory device or a microprocessor.
  • Input signals enter the device 2 through input buffers 4, which adapt the input signals to the voltage levels required by the device 2.
  • the buffers 4 may include transition delay circuits, such as the type disclosed herein in conjunction with the present invention.
  • the buffers 4 provide signals, which are transmitted via a bus 6, to functional circuitry 8.
  • the circuitry 8 may perform a number of functions depending on the function of the device 2.
  • the circuitry 8 generates output signals which are transmitted outside the device 2.
  • FIG. 4 shows a circuit diagram of a buffer 32.
  • the buffer 32 may be any type of buffer, such as an input buffer, a leveling circuit, or a converter circuit, in which it is necessary to delay an input signal.
  • an inverter 34 receives an input signal IN.
  • the output of the inverter 34 is input to a transition delay circuit 36.
  • the transition delay circuit 36 has an inverter delay circuit 38, which delays the input signal IN.
  • the delay circuit 38 is comprised of a number of inverters, and, in the preferred embodiment shown in FIG. 3, is comprised of three inverters 40, 42, and 44.
  • the transition delay circuit 36 also includes a p-type MOS capacitor 46 and an n-type MOS capacitor 48.
  • the input signal IN is fed forward through feed-forward line 50 to the p-type capacitor 46 and through feed-forward line 52 to the n-type capacitor 48.
  • the MOS capacitors 46 and 48 introduce a delay into the transition delay circuit 36.
  • a source terminal 54 of the p-type capacitor 46 and a source terminal 56 of the n-type capacitor 48 transition from high logic states to low logic states after a delay introduced by the inverter 34.
  • the inverter 34 has a large delay.
  • a node 58 that is common to the gate terminals of the capacitors 46 and 48 transitions from a low logic state to a high logic state. As the node 58 transitions, the gate terminal of the p-type capacitor 46 pulls minority carriers (electrons) from the substrate.
  • the capacitor 46 operates relatively slowly and has a reduced effect on the delay of the delay circuit 36.
  • the gate terminal of the n-type capacitor 48 pulls majority carriers (electrons) from the substrate causing capacitance to be formed. This capacitance creates a delay in the delay circuit 36.
  • the source terminal 54 of the p-type capacitor 46 and the source terminal 56 of the n-type capacitor 48 transition from low logic states to high logic states after a delay introduced by the inverter 34.
  • the node 58 transitions from a high logic state to a low logic state.
  • the gate terminal of the n-type capacitor 48 pulls minority carriers (holes) from the substrate. Because minority carriers are being pulled, the capacitor 48 operates relatively slowly and has a reduced effect on the delay of the delay circuit 36.
  • the gate terminal of the p-type capacitor 46 pulls majority carriers (holes) from the substrate causing capacitance to be formed. This capacitance creates a delay in the delay circuit 36.
  • the signal After a delay introduced by the transition delay circuit 36, the signal is inverted by an inverter 59 to produce an output signal OUT.
  • FIG. 5 illustrates a circuit diagram of a buffer 78.
  • the buffer 78 is constructed similarly to the buffer 32 of FIG. 4. However, the buffer 78 differs from the buffer 32 in that the inverter 34 is removed.
  • the circuit operation of the buffer 78 is similar to the operation of the buffer 32 except the input signal IN is not inverted before it is input to the transition delay circuit 36.
  • FIG. 6 illustrates a timing diagram of the operation of the buffer 32 of FIG. 4.
  • the input signal IN is represented in FIG. 6 as waveform A
  • the voltage at node 58 is represented as waveform B
  • the voltage at node 54 is represented as waveform C
  • the output signal OUT is represented as waveform D.
  • the pulses of the input signal IN (A) were peaked at 2.9 volts.
  • FIG. 7 A portion of the timing diagram of FIG. 6 is shown in higher resolution in FIG. 7.
  • the input. signal IN (A) was pulsed at 2.9 volts and Vcc was set at 3.1 volts.
  • the node 54 signal (C) transitions from a high logic state to a low logic state.
  • the node 58 transitions from a low logic state to a high logic state after passing through the inverters 40, 42, and 44.
  • the signal reaches a high logic value at point E, as indicated in FIG. 7.
  • the output signal OUT (D) is present at the output of the inverter 59.
  • a high to low transition of the input signal IN (A) is also depicted in FIG. 7.
  • the node 54 signal (C) transitions from a low logic state to a high logic state after inversion by this inverter 34.
  • the node 58 (B) transitions from a high logic state to a low logic state after passing through the inverters 40, 42, and 44.
  • the output signal OUT (D) is created after inversion of the node 58 by the inverter 59. It can be seen from the figure that the transition time from high to low is substantially the same as the transition time from low to high.
  • FIG. 8 illustrates a timing diagram of the operation of a variation of the prior art buffer 16 of FIG. 2.
  • An inverter was added in series to the delay circuit 30 to bring the total number of inverters in the delay circuit 30 to 4.
  • the input signal IN is represented as waveform A in FIG. 8 and the output signal OUT is represented as waveform B in FIG. 8.
  • the input signal IN (A) was pulsed at 2.9 volts.
  • FIG. 9 illustrates a timing diagram of the buffer 78 of FIG. 5.
  • the first and third pulses of the input signal IN (A) of FIG. 9 were pulsed at 3.0 volts.
  • the second and fourth pulses of the input signal IN (A) of FIG. 9 were pulsed at 2.5 volts.
  • FIG. 10 is a timing diagram illustrating the operation of the prior art buffer 16 of FIG. 2.
  • the first and third pulses of the input signal IN (A) of FIG. 10 were pulsed at 3.0 volts.
  • the second and fourth pulses of the input signal IN (A) of FIG. 10 were pulsed at 2.5 volts.
  • FIG. 11 illustrates a timing diagram of the buffer 78 of FIG. 5.
  • the pulses of the input signal IN (A) of FIG. 11 were pulsed at 2.9 volts.
  • the signal at node 58 is represented as waveform C in FIG. 11. From this figure it can be seen that the transition time from high to low is substantially the same as the transition time from low to high.
  • FIG. 12 illustrates a timing diagram of the prior art buffer 16 of FIG. 2.
  • the pulses of the input signal IN (A) of FIG. 12 were pulsed at 2.9 volts.
  • the signal at node 29 is represented as waveform C in FIG. 12. From this figure it can be seen that the transition time from high to low and the transition time low to high in the prior art circuit are not as close to being the same value as the circuit of the present invention.
  • Simulations of the buffer 32 of FIG. 4 and the buffer 78 of FIG. 5 and simulations of the prior art buffer 16 of FIG. 2 and a variation thereof were run using the HSPICE circuit simulator.
  • the simulation results were measured after HSPICE optimized the size of the capacitors 46, 48 and 26, 28, respectively.
  • the delay between the time when the input signal IN transitioned and the output signal OUT transitioned was measured with various combinations of Vcc and input signal voltage levels. The delay times are illustrated in Tables 1 through 4.
  • the first column in Tables 1 through 4 identifies whether the buffer under simulation was the prior art buffer 16 of FIG. 2 or the buffers 32 of FIG. 4 or 78 of FIG. 5.
  • the second column in Tables 1 through 4 indicates whether the delay time was measured when the input signal IN was rising or falling.
  • the third column indicates the peak voltage value of the input signal IN and the fourth column indicates the Vcc power supply voltage.
  • the fifth column identifies the delay time and the sixth column indicates the difference between the output switching delay associated with the rising of the input signal IN and the output switching delay associated with the falling of the input signal IN.
  • the seventh column indicates the difference between the greater of the output switching delays associated with each buffer at each value of Vcc and the lesser of the output switching delays associated with each value of Vcc.
  • FIG. 13 illustrates a computer system 60.
  • the computer system 60 utilizes a memory controller 62 in communication with SDRAMs 64 through a bus 66.
  • the memory controller 62 is also in communication with a processor 68 through a bus 70.
  • the processor 68 can perform a plurality of functions based on information and data stored in the SDRAMs 64.
  • One or more input devices 72 such as a keypad or a mouse, are connected to the processor 68 to allow an operator to manually input data, instructions, etc.
  • One or more output devices 74 are provided to display or otherwise output data generated by the processor 68. Examples of output devices include printers and video display units.
  • One or more data storage devices 76 may be coupled to the processor 68 to store data on, or retrieve information from, external storage media.
  • Examples of storage devices 76 and storage media include drives that accept hard and floppy disks, tape cassettes, and CD read only memories.
  • the buffer and transition delay circuit of the present invention can be incorporated in circuits, such as input buffer circuits, on the processor 68, the memory controller 62, and the SDRAMs 64.
  • the present invention also contemplates a method for delaying an input signal to a buffer circuit, comprising the steps of inputting the input signal to a delay circuit and two MOS capacitors, charging one of the MOS capacitors to produce a delayed signal, and outputting the delayed signal.

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  • Nonlinear Science (AREA)
  • Pulse Circuits (AREA)
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  • Logic Circuits (AREA)

Abstract

The present invention is directed to a transition delay circuit. The transition delay circuit includes a delay circuit which is responsive to an input signal. The transition delay circuit produces an output signal at a common node. The transition delay circuit also includes a first MOS capacitor connected between the input signal and the common node and a second MOS capacitor connected between the input signal and the common node. A method for delaying an input signal to a buffer circuit is also disclosed.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is directed generally to input buffer circuits, and, more particularly, to a transition delay circuit for use in input buffer circuits.

2. Description of the Background

In a semiconductor device, it is desirable to include a buffer circuit which buffers the device input signals before they are communicated to the internal circuitry of the device. A buffer circuit typically adapts the device input signals to internally required signal properties, such as signal voltage levels and transition delays, that must be present for the internal circuitry to operate correctly.

FIG. 1 illustrates a prior art buffer 10 constructed using complementary metal oxide semiconductor (CMOS) technology. The buffer 10 is constructed as an inverter, with a p-

type transistor

12 and an n-

type transistor

14. Input signal IN is input to the gate terminals of the

transistor

12 and the

transistor

14. If the signal IN exceeds a threshold voltage value, the

transistor

14 is turned "on" and output signal OUT has a path to ground through the

transistor

14. If the signal IN is below a certain threshold voltage value, the

transistor

12 is turned "on" and the signal OUT is connected to VCC through the

transistor

12.

The buffer 10 in FIG. 1 has the disadvantage that it is susceptible to noise and voltage surges. The buffer 10 has the further disadvantage that improper operation of the buffer 10 due to variations in operating conditions cannot be effectively corrected after the buffer 10 is constructed.

FIG. 2 illustrates a

prior art buffer

16 that was designed to eliminate certain of the disadvantages of the buffer 10 of FIG. 1. The

buffer

16 is constructed of a series of

inverter circuits

18, 20, 22, and 24 which receive an input signal IN. A p-

type MOS capacitor

26 is connected between VCC and the output of the

inverter

22. An n-type MOS capacitor is connected between the output of the

inverter

22 and GND.

The

inverters

18, 20, and 22 and the

capacitors

26 and 28 comprise a

delay circuit

30. The MOS capacitors introduce a delay into the

delay circuit

30. Where the input signal IN transitions from a high logic state to a low logic state, a

node

29, which is connected to the gate terminals of the

capacitors

26 and 28, transitions from a low logic state to a high logic state after a delay introduced by the

inverters

18, 20, and 22. As the

node

29 transitions, the gate terminal of the n-

type capacitor

26 pulls majority carriers (electrons) from the substrate causing capacitance to be formed. This capacitance introduces a delay into the

delay circuit

30.

When the input signal IN transitions from a low logic state to a high logic state, the

node

29 transitions from a high logic state to a low logic state. As the

node

29 transitions, the gate terminal of the p-

type capacitor

28 pulls majority carriers (holes) from the substrate causing capacitance to be formed. This capacitance introduces a delay into the

delay circuit

30.

The

MOS capacitors

26 and 28 provide for an adjustable delay in the

delay circuit

30 because they may be "trimmed" of excess material to achieve the desired delay that is introduced by the

capacitors

26 and 28. The

buffer

16 has the disadvantage that the delay, as measured by the time elapsed between the introduction of the input signal IN to the

inverter

18 and the appearance of the output signal OUT at the output of the

inverter

24, associated with low to high transitions of the signal IN is not consistent with the delay associated with high to low transitions of the signal IN.

Thus, the need exists for a transition delay circuit that may be incorporated into a buffer to provide similar low to high and high to low input transition delay times.

SUMMARY OF THE INVENTION

The present invention, according to its broadest implementation, is directed to a transition delay circuit which includes a delay circuit that is responsive to an input signal. The delay circuit produces an output signal at a common node. The transition delay circuit also includes a first MOS capacitor connected between the input signal and the common node and a second MOS capacitor connected between the input signal and the common node.

The present invention also contemplates a buffer circuit which includes a transition delay circuit and an inverter responsive to the transition delay circuit. A semiconductor device comprising a plurality of buffer circuits having transition delay circuits and a functional circuit responsive to the buffer circuit is also disclosed.

The present invention further contemplates a system which includes a processor having at least one buffer circuit, a memory controller having at least one buffer circuit, a plurality of memory devices, each having at least one buffer circuit, a first bus connecting the processor and the memory controller, and a second bus connecting the memory controller and the memory devices. The buffer circuits include a transition delay circuit and an inverter responsive to the transition delay circuit.

The present invention also contemplates a method for delaying an input signal to a buffer circuit. The method includes the steps of inputting the input signal to a delay circuit and two MOS capacitors. One of the MOS capacitors is charged to produce a delayed signal and the delayed signal is outputted.

The present invention represents a substantial advance over prior buffers. Because the present invention has a feed-forward transition delay circuit, the low to high and high to low transitions of the input signal have approximately the same delays as measured from the time the transitioning input signal is introduced to the buffer and the time the signal appears at the output of the buffer. This unexpected advantage, and other advantages and benefits of the present invention, will become apparent from t:he Detailed Description of the Preferred Embodiments hereinbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

For the present invention to be clearly understood and readily practiced, the present invention will be described in conjunction with the following figures, wherein:

FIG. 1 is a circuit diagram of a prior art buffer;

FIG. 2 is a circuit diagram of a prior art buffer with a delay circuit;

FIG. 3 is a circuit diagram of a semiconductor memory device that includes input buffers;

FIG. 4 is a circuit diagram of a preferred embodiment of a buffer with transition delay circuit of the present invention;

FIG. 5 is a circuit diagram of another preferred embodiment of buffer with a transition delay circuit of the present invention;

FIG. 6 is a timing diagram illustrating the operation of the buffer of FIG. 4;

FIG. 7 is a timing diagram illustrating a portion of the timing diagram of FIG. 6 in higher resolution;

FIG. 8 is a timing diagram illustrating the operation of the buffer of FIG. 2 with an inverter added;

FIG. 9 is a timing diagram illustrating the operation of the buffer of FIG. 5;

FIG. 10 is a timing diagram illustrating the operation of the buffer of FIG. 2;

FIG. 11 is a timing diagram illustrating the operation of the buffer of FIG 5;

FIG. 12 is a timing diagram illustrating the operation of the buffer of FIG. 2; and

FIG. 13 is a block diagram of a system in which the present invention may be used.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

It is to be understood that the figures and descriptions of the present invention have been simplified to illustrate elements that are relevant for a clear understanding of the present invention, while eliminating, for purposes of clarity, many other elements found in a typical buffer circuit. Those of ordinary skill in the art will recognize that other elements are desirable and/or required to implement a device, such as a memory device, incorporating the present invention. However, because such elements are well known in the art, and because they do not facilitate a better understanding of the present invention, a discussion of such elements is not provided herein.

FIG. 3 illustrates a

semiconductor device

2. The

semiconductor device

2 may be any type of semiconductor device, such as, for example, a memory device or a microprocessor. Input signals enter the

device

2 through

input buffers

4, which adapt the input signals to the voltage levels required by the

device

2. The

buffers

4 may include transition delay circuits, such as the type disclosed herein in conjunction with the present invention. The

buffers

4 provide signals, which are transmitted via a

bus

6, to

functional circuitry

8. The

circuitry

8 may perform a number of functions depending on the function of the

device

2. The

circuitry

8 generates output signals which are transmitted outside the

device

2.

FIG. 4 shows a circuit diagram of a

buffer

32. The

buffer

32 may be any type of buffer, such as an input buffer, a leveling circuit, or a converter circuit, in which it is necessary to delay an input signal.

In the

buffer

32 of FIG. 4, an

inverter

34 receives an input signal IN. The output of the

inverter

34 is input to a

transition delay circuit

36. The

transition delay circuit

36 has an

inverter delay circuit

38, which delays the input signal IN. The

delay circuit

38 is comprised of a number of inverters, and, in the preferred embodiment shown in FIG. 3, is comprised of three

inverters

40, 42, and 44.

The

transition delay circuit

36 also includes a p-

type MOS capacitor

46 and an n-

type MOS capacitor

48. The input signal IN is fed forward through feed-

forward line

50 to the p-

type capacitor

46 and through feed-

forward line

52 to the n-

type capacitor

48.

The

MOS capacitors

46 and 48 introduce a delay into the

transition delay circuit

36. When the input signal IN transitions from a low logic state to a high logic state, a

source terminal

54 of the p-

type capacitor

46 and a

source terminal

56 of the n-

type capacitor

48 transition from high logic states to low logic states after a delay introduced by the

inverter

34. In a preferred embodiment, the

inverter

34 has a large delay. After a delay introduced by the

delay circuit

38, a

node

58 that is common to the gate terminals of the

capacitors

46 and 48 transitions from a low logic state to a high logic state. As the

node

58 transitions, the gate terminal of the p-

type capacitor

46 pulls minority carriers (electrons) from the substrate. Because minority carriers are being pulled, the

capacitor

46 operates relatively slowly and has a reduced effect on the delay of the

delay circuit

36. As the

node

58 transitions and the voltage between the gate terminal of the n-

type capacitor

48 and the source terminal of the n-

type capacitor

48 increases, the gate terminal of the n-

type capacitor

48 pulls majority carriers (electrons) from the substrate causing capacitance to be formed. This capacitance creates a delay in the

delay circuit

36.

When the input signal IN transitions from a high logic state to a low logic state the

source terminal

54 of the p-

type capacitor

46 and the

source terminal

56 of the n-

type capacitor

48 transition from low logic states to high logic states after a delay introduced by the

inverter

34. After a delay introduced by the

delay circuit

38, the

node

58 transitions from a high logic state to a low logic state. As the

node

58 transitions, the gate terminal of the n-

type capacitor

48 pulls minority carriers (holes) from the substrate. Because minority carriers are being pulled, the

capacitor

48 operates relatively slowly and has a reduced effect on the delay of the

delay circuit

36. As the

node

58 transitions and the voltage between the gate terminal of the p-

type capacitor

46 and the source terminal of the p-

type capacitor

46 decreases, the gate terminal of the p-

type capacitor

46 pulls majority carriers (holes) from the substrate causing capacitance to be formed. This capacitance creates a delay in the

delay circuit

36.

After a delay introduced by the

transition delay circuit

36, the signal is inverted by an

inverter

59 to produce an output signal OUT.

FIG. 5 illustrates a circuit diagram of a buffer 78. The buffer 78 is constructed similarly to the

buffer

32 of FIG. 4. However, the buffer 78 differs from the

buffer

32 in that the

inverter

34 is removed. The circuit operation of the buffer 78 is similar to the operation of the

buffer

32 except the input signal IN is not inverted before it is input to the

transition delay circuit

36.

FIG. 6 illustrates a timing diagram of the operation of the

buffer

32 of FIG. 4. The input signal IN is represented in FIG. 6 as waveform A, the voltage at

node

58 is represented as waveform B, the voltage at

node

54 is represented as waveform C, and the output signal OUT is represented as waveform D. The pulses of the input signal IN (A) were peaked at 2.9 volts. The waveforms corresponding to the first pulse of the input signal IN (A) were genera-ed at Vcc=3.1 volts and the waveforms corresponding to the second pulse of the input signal IN (A) were generated at Vcc=3.6 volts.

A portion of the timing diagram of FIG. 6 is shown in higher resolution in FIG. 7. The input. signal IN (A) was pulsed at 2.9 volts and Vcc was set at 3.1 volts. As the input signal IN (A) transitions from a low logic state to a high logic state, the

node

54 signal (C) transitions from a high logic state to a low logic state. The

node

58 transitions from a low logic state to a high logic state after passing through the

inverters

40, 42, and 44. The signal reaches a high logic value at point E, as indicated in FIG. 7. The output signal OUT (D) is present at the output of the

inverter

59.

A high to low transition of the input signal IN (A) is also depicted in FIG. 7. As the signal IN transitions low, the

node

54 signal (C) transitions from a low logic state to a high logic state after inversion by this

inverter

34. The node 58 (B) transitions from a high logic state to a low logic state after passing through the

inverters

40, 42, and 44. The output signal OUT (D) is created after inversion of the

node

58 by the

inverter

59. It can be seen from the figure that the transition time from high to low is substantially the same as the transition time from low to high.

FIG. 8 illustrates a timing diagram of the operation of a variation of the

prior art buffer

16 of FIG. 2. An inverter was added in series to the

delay circuit

30 to bring the total number of inverters in the

delay circuit

30 to 4. The input signal IN is represented as waveform A in FIG. 8 and the output signal OUT is represented as waveform B in FIG. 8. The input signal IN (A) was pulsed at 2.9 volts. The output signal OUT (B) waveform corresponding to the first pulse of the input signal IN (A) in FIG. 8 was generated at Vcc=3.1 volts. The output signal OUT (B) waveform corresponding to the second pulse of the input signal IN (A) in FIG. 8 was generated at Vcc=3.6 volts. From this figure it can be seen that the transition time from high to low and the transition time from low to high in the prior art circuit are not as close to being the same value as in the circuit of the present invention.

FIG. 9 illustrates a timing diagram of the buffer 78 of FIG. 5. The first and third pulses of the input signal IN (A) of FIG. 9 were pulsed at 3.0 volts. The second and fourth pulses of the input signal IN (A) of FIG. 9 were pulsed at 2.5 volts. The output signal OUT (B) waveforms corresponding to the first and second pulses of the input signal IN (A) in FIG. 9 were generated at Vcc=3.1 volts. The output signal OUT (B) waveforms corresponding to the third and fourth pulses of the input signal IN (A) in FIG. 9 were generated at Vcc=3.6 volts. From this figure it can be seen that the transition time from high to low is substantially the same as the transition time from low to high.

FIG. 10 is a timing diagram illustrating the operation of the

prior art buffer

16 of FIG. 2. The first and third pulses of the input signal IN (A) of FIG. 10 were pulsed at 3.0 volts. The second and fourth pulses of the input signal IN (A) of FIG. 10 were pulsed at 2.5 volts. The output signal OUT (B) waveforms corresponding to the first and second pulses of the input signal IN (A) in FIG. 10 were generated at Vcc=3.1 volts. The output signal OUT (B) waveforms corresponding to the third and fourth pulses of the input signal IN (A) in FIG. 10 were generated at Vcc=3.6 volts. From this figure it can be seen that the transition tire from high to low and the transition time from low to high in the prior art circuit are not as close to being the same value as the circuit of the present invention.

FIG. 11 illustrates a timing diagram of the buffer 78 of FIG. 5. The pulses of the input signal IN (A) of FIG. 11 were pulsed at 2.9 volts. The output signal OUT (B) waveform corresponding to the first pulse of the input signal IN (A) in FIG. 11 was generated at Vcc=3.1 volts. The output signal OUT (B) waveforms corresponding to the second pulses of the input signal IN (A) in FIG. 11 was generated at Vcc=3.6 volts. The signal at

node

58 is represented as waveform C in FIG. 11. From this figure it can be seen that the transition time from high to low is substantially the same as the transition time from low to high.

FIG. 12 illustrates a timing diagram of the

prior art buffer

16 of FIG. 2. The pulses of the input signal IN (A) of FIG. 12 were pulsed at 2.9 volts. The output signal OUT (B) waveforms corresponding to the first pulse of the input signal IN (A) in FIG. 12 was generated at Vcc=3.1 volts. The output signal OUT (B) waveform corresponding to the second pulse of the input signal IN (A) in FIG. 12 was generated at Vcc=3.6 volts. The signal at

node

29 is represented as waveform C in FIG. 12. From this figure it can be seen that the transition time from high to low and the transition time low to high in the prior art circuit are not as close to being the same value as the circuit of the present invention.

Simulations of the

buffer

32 of FIG. 4 and the buffer 78 of FIG. 5 and simulations of the

prior art buffer

16 of FIG. 2 and a variation thereof were run using the HSPICE circuit simulator. The simulation results were measured after HSPICE optimized the size of the

capacitors

46, 48 and 26, 28, respectively. The delay between the time when the input signal IN transitioned and the output signal OUT transitioned was measured with various combinations of Vcc and input signal voltage levels. The delay times are illustrated in Tables 1 through 4.

The first column in Tables 1 through 4 identifies whether the buffer under simulation was the

prior art buffer

16 of FIG. 2 or the

buffers

32 of FIG. 4 or 78 of FIG. 5. The second column in Tables 1 through 4 indicates whether the delay time was measured when the input signal IN was rising or falling. The third column indicates the peak voltage value of the input signal IN and the fourth column indicates the Vcc power supply voltage. The fifth column identifies the delay time and the sixth column indicates the difference between the output switching delay associated with the rising of the input signal IN and the output switching delay associated with the falling of the input signal IN. The seventh column indicates the difference between the greater of the output switching delays associated with each buffer at each value of Vcc and the lesser of the output switching delays associated with each value of Vcc.

From the tables it can be seen that the difference between the output switching delay associated with the rising of the input signal IN and the output switching delay associated with the falling of the input signal IN are generally substantially the same for the buffer circuit of the present invention and more disparate for the prior art buffer circuits. The magnitude of the improvement of the present invention is unexpected in that it is much greater than would have been predicted given the difference between the prior art buffer circuits and the buffer circuit of the present invention.

              TABLE 1                                                     
______________________________________                                    
                                    DEL- OVERALL                          
       INPUT                  DELAY TA   DELTA                            
BUFFER TRANSITION VIN    VCC  (ps)  (ps) (ps)                             
______________________________________                                    
32     Rising     2.9 V  3.1 V                                            
                              695   26    41                              
FIGS. 6,7                                                                 
32     Falling    2.9 V  3.1 V                                            
                              721                                         
FIGS. 6,7                                                                 
32     Rising     2.9 V  3.6 V                                            
                              703   23                                    
FIG. 6                                                                    
32     Falling    2.9 V  3.6 V                                            
                              680                                         
FIG. 6                                                                    
16 +   Rising     2.9 V  3.1 V                                            
                              682   91   127                              
inverter                                                                  
FIG. 8                                                                    
16 +   Falling    2.9 V  3.1 V                                            
                              773                                         
inverter                                                                  
FIG. 8                                                                    
16 +   Rising     2.9 V  3.6 V                                            
                              690   44                                    
inverter                                                                  
FIG. 8                                                                    
16 +   Falling    2.9 V  3.6 V                                            
                              646                                         
inverter                                                                  
FIG. 8                                                                    
______________________________________                                    
              TABLE 2                                                     
______________________________________                                    
                                    DEL- OVERALL                          
       INPUT                  DELAY TA   DELTA                            
BUFFER TRANSITION VIN    VCC  (ps)  (ps) (ps)                             
______________________________________                                    
78     Rising     3.0 V  3.1 V                                            
                              713   145  156                              
FIG. 9                                                                    
78     Falling    3.0 V  3.1 V                                            
                              568                                         
FIG. 9                                                                    
78     Rising     3.0 V  3.6 V                                            
                              624    67                                   
FIG. 9                                                                    
78     Falling    3.0 V  3.6 V                                            
                              557                                         
FIG. 9                                                                    
16     Rising     3.0 V  3.1 V                                            
                              629    29  160                              
FIG. 10                                                                   
16     Falling    3.0 V  3.1 V                                            
                              658                                         
FIG. 10                                                                   
16     Rising     3.0 V  3.6 V                                            
                              659   160                                   
FIG. 10                                                                   
16     Falling    3.0 V  3.6 V                                            
                              499                                         
FIG. 10                                                                   
______________________________________                                    
              TABLE 3                                                     
______________________________________                                    
                                    DEL- OVERALL                          
       INPUT                  DELAY TA   DELTA                            
BUFFER TRANSITION VIN    VCC  (ps)  (ps) (ps)                             
______________________________________                                    
78     Rising     2.5 V  3.1 V                                            
                              666    20  221                              
FIG. 9                                                                    
78     Falling    2.5 V  3.1 V                                            
                              646                                         
FIG. 9                                                                    
78     Rising     2.5 V  3.6 V                                            
                              604   159                                   
FIG. 9                                                                    
78     Falling    2.5 V  3.6 V                                            
                              445                                         
FIG. 9                                                                    
16     Rising     2.5 V  3.1 V                                            
                              747   159  401                              
FIG. 10                                                                   
16     Falling    2.5 V  3.1 V                                            
                              588                                         
FIG. 10                                                                   
16     Rising     2.5 V  3.6 V                                            
                              771   401                                   
FIG. 10                                                                   
16     Falling    2.5 V  3.6 V                                            
                              370                                         
FIG. 10                                                                   
______________________________________                                    
              TABLE 4                                                     
______________________________________                                    
                                    DEL- OVERALL                          
       INPUT                  DELAY TA   DELTA                            
BUFFER TRANSITION VIN    VCC  (ps)  (ps) (ps)                             
______________________________________                                    
78     Rising     2.9 V  3.1 V                                            
                              561   37   142                              
FIG. 11                                                                   
78     Falling    2.9 V  3.1 V                                            
                              524                                         
FTG. 11                                                                   
78     Rising     2.9 V  3.6 V                                            
                              517   98                                    
FIG. 11                                                                   
78     Falling    2.9 V  3.6 V                                            
                              419                                         
FIG. 11                                                                   
16     Rising     2.9 V  3.1 V                                            
                              537    8   225                              
FIG. 12                                                                   
16     Falling    2.9 V  3.1 V                                            
                              529                                         
FIG. 12                                                                   
16     Rising     2.9 V  3.6 V                                            
                              593   225                                   
FIG. 12                                                                   
16     Falling    2.9 V  3.6 V                                            
                              368                                         
FIG. 12                                                                   
______________________________________                                    

FIG. 13 illustrates a

computer system

60. The

computer system

60 utilizes a

memory controller

62 in communication with

SDRAMs

64 through a

bus

66. The

memory controller

62 is also in communication with a

processor

68 through a

bus

70. The

processor

68 can perform a plurality of functions based on information and data stored in the

SDRAMs

64. One or

more input devices

72, such as a keypad or a mouse, are connected to the

processor

68 to allow an operator to manually input data, instructions, etc. One or

more output devices

74 are provided to display or otherwise output data generated by the

processor

68. Examples of output devices include printers and video display units. One or more

data storage devices

76 may be coupled to the

processor

68 to store data on, or retrieve information from, external storage media. Examples of

storage devices

76 and storage media include drives that accept hard and floppy disks, tape cassettes, and CD read only memories. The buffer and transition delay circuit of the present invention can be incorporated in circuits, such as input buffer circuits, on the

processor

68, the

memory controller

62, and the

SDRAMs

64.

The present invention also contemplates a method for delaying an input signal to a buffer circuit, comprising the steps of inputting the input signal to a delay circuit and two MOS capacitors, charging one of the MOS capacitors to produce a delayed signal, and outputting the delayed signal.

While the present invention has been described in conjunction with preferred embodiments thereof, many modifications and variations will be apparent to those of ordinary skill in the art. The foregoing description and the following claims are intended to cover all such modifications and variations.

Claims (11)

What is claimed is:

1. A transition delay circuit, comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a p-type MOS capacitor having a source terminal connected to said input terminal and a gate terminal connected to said common node; and

an n-type MOS capacitor having a source terminal connected to said input terminal and a gate terminal connected to said common node.

2. The transition delay circuit of claim 1 wherein said delay circuit comprises a plurality of inverters connected serially.

3. The transition delay circuit of claim 1 wherein said delay circuit comprises three inverters connected serially.

4. A transition delay circuit, comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a first capacitor having majority and minority carriers, said first capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

a second capacitor having majority and minority carriers opposite of said majority and minority carriers of said first capacitor, said second capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node.

5. A buffer circuit, comprising:

a transition delay circuit, said transition delay circuit comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a p-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an n-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an inverter responsive to said transition delay circuit.

6. The buffer circuit of claim 5 further comprising a second inverter responsive to said input signal and having an output terminal, wherein the source terminal of said p-type MOS capacitor is connected to the output terminal of said second inverter and the source terminal of said n-type MOS capacitor is connected to the output terminal of said second inverter.

7. The buffer circuit of claim 6 wherein said delay circuit comprises a plurality of inverters connected serially.

8. The buffer circuit of claim 6 wherein said delay circuit comprises three inverters connected serially.

9. A semiconductor device, comprising:

a buffer circuit comprising:

a transition delay circuit, said transition delay circuit comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a p-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an n-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an inverter responsive to said transition delay circuit; and

a functional circuit responsive to said buffer circuit.

10. A system comprising:

a processor; and

a memory device in communication with said processor, slid memory device having at least one buffer circuit;

said buffer circuit comprising:

a transition delay circuit, said transition delay circuit comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a p-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an n-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an inverter responsive to said transition delay circuit.

11. A system, comprising:

a processor; and

a memory device in communication with said processor,

wherein said processor includes a buffer circuit, said buffer circuit comprising:

a transition delay circuit, said transition delay circuit comprising:

a delay circuit having an input terminal responsive to an input signal and having an output terminal connected to a common node;

a p-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an n-type MOS capacitor having a source terminal connected to said input terminal and having a gate terminal connected to said common node; and

an inverter responsive to said transition delay circuit.

US09/003,832 1998-01-07 1998-01-07 Semiconductor buffer circuit with a transition delay circuit Expired - Lifetime US6154078A (en)

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US09/003,832 US6154078A (en) 1998-01-07 1998-01-07 Semiconductor buffer circuit with a transition delay circuit
US09/557,468 US6278310B1 (en) 1998-01-07 2000-04-25 Semiconductor buffer circuit with a transition delay circuit
US09/928,732 US6515529B2 (en) 1998-01-07 2001-08-13 Semiconductor buffer circuit with a transition delay circuit
US10/316,361 US6788126B2 (en) 1998-01-07 2002-12-11 Semiconductor buffer circuit with a transition delay circuit

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US6552716B1 (en) * 1999-05-05 2003-04-22 Logitech Europe, S.A. Transmission of differential optical detector signal over a single line
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US6977530B1 (en) 2004-02-04 2005-12-20 Sun Microsystems, Inc. Pulse shaper circuit for sense amplifier enable driver
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US6515529B2 (en) 1998-01-07 2003-02-04 Micron Technology, Inc. Semiconductor buffer circuit with a transition delay circuit
US6552716B1 (en) * 1999-05-05 2003-04-22 Logitech Europe, S.A. Transmission of differential optical detector signal over a single line
US6487648B1 (en) * 1999-12-15 2002-11-26 Xilinx, Inc. SDRAM controller implemented in a PLD
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US7365582B1 (en) * 2003-05-14 2008-04-29 Marvell International Ltd. Bootstrapped charge pump driver in a phase-lock loop
US6977530B1 (en) 2004-02-04 2005-12-20 Sun Microsystems, Inc. Pulse shaper circuit for sense amplifier enable driver
US20060170478A1 (en) * 2005-02-02 2006-08-03 Samsung Electronics Co., Ltd. Delay circuit for semiconductor device
US20090212838A1 (en) * 2008-02-25 2009-08-27 Samsung Electronics Co., Ltd. Delay Circuit Having Long Delay Time and Semiconductor Device Comprising the Same
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US20020011887A1 (en) 2002-01-31
US6278310B1 (en) 2001-08-21
US20030128063A1 (en) 2003-07-10
US6515529B2 (en) 2003-02-04
US6788126B2 (en) 2004-09-07

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