patents.google.com

WO2015106246A1 - Miniaturized and ruggedized wafer level mems force sensors - Google Patents

  • ️Thu Jul 16 2015

WO2015106246A1 - Miniaturized and ruggedized wafer level mems force sensors - Google Patents

Miniaturized and ruggedized wafer level mems force sensors Download PDF

Info

Publication number
WO2015106246A1
WO2015106246A1 PCT/US2015/011144 US2015011144W WO2015106246A1 WO 2015106246 A1 WO2015106246 A1 WO 2015106246A1 US 2015011144 W US2015011144 W US 2015011144W WO 2015106246 A1 WO2015106246 A1 WO 2015106246A1 Authority
WO
WIPO (PCT)
Prior art keywords
base
force sensor
cap
force
strain
Prior art date
2014-01-13
Application number
PCT/US2015/011144
Other languages
French (fr)
Inventor
Amnon Brosh
Ryan DIESTELHORST
Steven Nasiri
Original Assignee
Nextinput, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
2014-01-13
Filing date
2015-01-13
Publication date
2015-07-16
2015-01-13 Application filed by Nextinput, Inc. filed Critical Nextinput, Inc.
2015-01-13 Priority to CN201580004398.9A priority Critical patent/CN105934661B/en
2015-01-13 Priority to EP15735327.7A priority patent/EP3094950B1/en
2015-01-13 Priority to US15/111,044 priority patent/US9902611B2/en
2015-07-16 Publication of WO2015106246A1 publication Critical patent/WO2015106246A1/en
2018-02-26 Priority to US15/904,631 priority patent/US20180179050A1/en
2019-01-23 Priority to US16/254,968 priority patent/US20200024126A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0056—Adjusting the distance between two elements, at least one of them being movable, e.g. air-gap tuning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/205—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using distributed sensing elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief

Definitions

  • the present invention relates to MEMS force sensing dies used for converting force into strain, which is sensed by piezoresistive strain gauges.
  • the present invention pertains to a microelectromechanical (“MEMS") force sensor comprising multiple compact sensing elements positioned on the periphery of the die.
  • MEMS microelectromechanical
  • Each sensing element is comprised of a flexure and a piezoresistive strain gauge.
  • four sensing elements may be employed in each force die, although additional or fewer sensing elements may also be used.
  • the small sensing element reduces die size and the peripheral layout allows retaining walls to be included, which prevents dicing debris from entering the die and clogging the overload stop.
  • the peripheral layout allows the die to be fully sealed against debris from the external environment.
  • the dies may be manufactured by bonding a cap (typically Pyrex) wafer to a base (typically silicon) wafer.
  • the sensing elements may be formed by etching flexures on the top side of the silicon wafer. Some flexures may also require etching grooves or slots on the bottom side. Piezoresistive strain gauges may also be diffused on the flexures and interconnected to the contact pads on the bottom of the die.
  • the bond between the base and cap wafers includes a gap produced by protrusions sculptured either on the top of the base and/or on the bottom of the cap.
  • release slots are etched on the periphery of base.
  • the slots release a retaining wall, designed to prevent debris from entering the air gap, from the rest of the base.
  • the protrusions and retaining wall deflect with force, straining the piezoresistive strain gauges and producing an output signal proportional to the force.
  • the gap may be designed to limit the displacement of the cap in order to provide force overload protection.
  • Figure 1 is an isometric view of the MEMS force sensor.
  • Figure 2 is a top view of the MEMS force sensor.
  • Figure 3 is a side view of the MEMS force sensor.
  • Figure 4 is a bottom view of the MEMS force sensor.
  • Figure 5 is a top view of a wafer section comprising a 2x2 array of MEMS force sensors.
  • Figure 6 is an isometric view of the MEMS force sensor with a machined cap.
  • Figure 7 is a top view of the MEMS force sensor with a machined cap.
  • Figure 8 is an isometric view of the MEMS force sensor with a retaining wall.
  • Figure 9 is a top view of the MEMS force sensor with a retaining wall.
  • Figure 10 is an isometric view of the MEMS force sensor with a retaining wall and corner flexures.
  • Figure 11 is a top view of the MEMS force sensor with a retaining wall and corner flexures.
  • Figure 12 is an isometric view of the MEMS force sensor according to another exemplary embodiment.
  • Figure 13 is a top view of the MEMS force sensor according to another exemplary embodiment.
  • Figure 14 is a side view of the MEMS force sensor according to another exemplary embodiment.
  • Figure 15 is a bottom view of the MEMS force sensor according to another exemplary embodiment.
  • Figure 16 is an isometric bottom view of the MEMS force sensor according to another exemplary embodiment.
  • the present invention relates to a microelectromechanical system (“MEMS") force sensor device for measuring a force applied to at least a portion thereof.
  • the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 in the base 11.
  • a contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 to at least one flexure 15.
  • the base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.
  • the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device.
  • the base comprises a shelf 17 that is etched significantly below the air gap 16. The shelf 17 creates a distance between the dicing interface at the edge of the base 11 and the air gap 16 where debris will tend to collect, creating a channel for water to carry away debris and preventing mechanical interference with the functional range of the device.
  • the force sensor device comprises at least one deposited or implanted piezoresistive element on the bottom surface 18 of the base 11. As strain is induced in the at least one flexure 15 proportional to the force F, a localized strain is produced on the piezoresistive elements 19 (depicted schematically), such that the piezoresistive elements 19 experience compression, depending on their specific orientation.
  • the wafer section comprises two dicing lanes 21 to separate a 2x2 array of devices.
  • the at least one rigid boss are supported on two sides by bridges 22 which prevent the at least one flexure 15 from bending under the pressure of the bonding process that attaches the base 11 to the cap 12. Without the bridges 22, the at least one rigid boss 13 would only be supported by the at least one flexure 15. This would deform under pressure, causing the air gap 16 to close and resulting in the cap 12 bonding to the entire base 11, effectively eliminating the functional range of the device.
  • the bridges 22 are placed in the dicing lanes 21 such that they will be removed during dicing to release the at least one rigid boss 13 and allow it to move with applied force F.
  • the wafer section comprises etched holes 23 at the edges of the at least one flexure 15.
  • the holes 23 are etched into the base prior to dicing such that when the wafer is diced, the blade does not come into contact with the at least one flexure 15. This technique allows for smooth surface edges to be achieved by etching processes, which in turn increases the at least one flexure's 15 yield strength.
  • the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 in the base 11.
  • a contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 to at least one flexure 15.
  • the base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.
  • the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device.
  • the cap comprises quarter circle machined holes 24.
  • the holes 24 create a distance between the dicing interface at the edge of the base 11 and the air gap 16 where debris will tend to collect, creating a channel for water to carry away debris and preventing mechanical interference with the functional range of the device.
  • the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 and retaining wall 25 in the base 11.
  • a contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 and retaining wall 25 to at least one flexure 15.
  • the base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.
  • the base comprises a retaining wall 25.
  • the retaining wall 25 is released and allowed to move with respect to the rest of the base 11 due to slots 26 etched through the base.
  • the cap 12 and the base 11 are sealed together at the retaining wall 25 in order to prevent debris from entering the air gap 16 during dicing.
  • the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid corner 27 and retaining wall 25 in the base 11.
  • a contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid corner 27 and retaining wall 25 to at least one flexure 15.
  • the base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.
  • the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device.
  • the base comprises a retaining wall 25.
  • the retaining wall 25 is released and allowed to move with respect to the rest of the base 11 due to slots 26 etched through the base.
  • the cap 12 and the base 11 are sealed together at the retaining wall 25 in order to prevent debris from entering the air gap 16 during dicing.
  • Fig. 12 illustrates an isometric view of the MEMS force sensor according to another exemplary embodiment.
  • Fig. 12 illustrates a microelectromechanical system (“MEMS") force sensor device 110 for measuring a force applied to at least a portion thereof.
  • MEMS microelectromechanical system
  • the force sensor device includes a base 111 and a cap 112 adhered at the surfaces formed by at least one rigid boss 113 and an outer wall 114 in the base 111. The surfaces adhered between the base 111 and the cap 112 form a sealed cavity 115.
  • a contact surface 116 exists along the top surface of the cap 112 for receiving an applied force F and transmitting the force F through the at least one rigid boss 113 and outer wall 114 to at least one flexure 117.
  • the sealed cavity 115 may include an air gap 118 between the base 111 and cap 112 wherein the thickness of the air gap 118 may be determined by the breaking deflection of the at least one flexure 117, such that the air gap 118 between the base 111 and the cap 112 will close and stop further deflection before the at least one flexure 117 is broken.
  • the force sensor device includes at least one deposited or implanted piezoresistive element on the bottom surface 119 of the base 111.
  • a localized strain is produced on the piezoresistive elements 120 (depicted schematically), such that the piezoresistive elements 120 experience compression, depending on their specific orientation.
  • the piezoresistive elements compress and tense, their resistivity changes in opposite fashion, such that a Wheatstone bridge circuit containing four piezoresistive elements 120 (two of each orientation relative to strain) becomes unbalanced and produces a differential voltage across the positive signal terminal SPOS and the negative signal terminal SNEG.
  • This differential voltage is directly proportional to the applied force F on the contact surface 116, and may be measured through electrical terminals 121 that are connected to external circuitry.
  • the electrical terminals 121 may comprise solder bumps to allow flip-chip assembly.
  • the force sensor device may include grooves 122 sculptured into the bottom surface of the base 111.
  • the grooves 122 may serve to reduce the amount of force absorbed by the peripheral flexures around the outer electrical terminals 121 and increase the amount of force absorbed by one or more center flexures, thereby increasing the strain in the piezoresistive elements 120 and improving overall sensitivity of the force sensor device.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)

Abstract

Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.

Description

MINIATURIZED AND RUGGEDIZED WAFER LEVEL MEMS FORCE SENSORS

[0001] This application claims the benefit of U.S. Provisional Application No.

61/926,472, filed January 13, 2014, U.S. Provisional Application No. 61/937,509, filed February 8, 2014, and U.S. Provisional Application No. 62/004,264, filed May 29, 2014.

Field of Technology

[0002] The present invention relates to MEMS force sensing dies used for converting force into strain, which is sensed by piezoresistive strain gauges.

Background

[0003] Current technology MEMS force dies are based on linking the applied force to the center of a sensing diaphragm comprising four piezoresistive strain gauges. The contact pads are positioned around the diaphragm, which makes current force dies relatively large. In addition, current MEMS force dies are fragile, lack the robustness of other force sensing technologies, such as force sensitive resistors, and are susceptible to debris from the external environment.

[0004] Accordingly, there is a need in the pertinent art for a small, low-cost, silicon force sensor that may be sealed and that is robust against mechanical overload.

SUMMARY

[0005] The present invention pertains to a microelectromechanical ("MEMS") force sensor comprising multiple compact sensing elements positioned on the periphery of the die. Each sensing element is comprised of a flexure and a piezoresistive strain gauge. In one exemplary embodiment, four sensing elements may be employed in each force die, although additional or fewer sensing elements may also be used. The small sensing element reduces die size and the peripheral layout allows retaining walls to be included, which prevents dicing debris from entering the die and clogging the overload stop. In addition, in one embodiment, the peripheral layout allows the die to be fully sealed against debris from the external environment.

[0006] The dies may be manufactured by bonding a cap (typically Pyrex) wafer to a base (typically silicon) wafer. The sensing elements may be formed by etching flexures on the top side of the silicon wafer. Some flexures may also require etching grooves or slots on the bottom side. Piezoresistive strain gauges may also be diffused on the flexures and interconnected to the contact pads on the bottom of the die.

[0007] The bond between the base and cap wafers includes a gap produced by protrusions sculptured either on the top of the base and/or on the bottom of the cap. In exemplary embodiments, after the Pyrex wafer is bonded, release slots are etched on the periphery of base. In some embodiments, the slots release a retaining wall, designed to prevent debris from entering the air gap, from the rest of the base. The protrusions and retaining wall deflect with force, straining the piezoresistive strain gauges and producing an output signal proportional to the force. The gap may be designed to limit the displacement of the cap in order to provide force overload protection.

BRIEF DESCRIPTION OF THE FIGURES

[0008] These and other features of the preferred embodiments of the invention will become more apparent in the detailed description in which reference is made to the appended drawings wherein:

[0009] Figure 1 is an isometric view of the MEMS force sensor.

[0010] Figure 2 is a top view of the MEMS force sensor.

[001] ] Figure 3 is a side view of the MEMS force sensor.

[0012] Figure 4 is a bottom view of the MEMS force sensor.

[0013] Figure 5 is a top view of a wafer section comprising a 2x2 array of MEMS force sensors.

[0014] Figure 6 is an isometric view of the MEMS force sensor with a machined cap.

[0015] Figure 7 is a top view of the MEMS force sensor with a machined cap.

[0016] Figure 8 is an isometric view of the MEMS force sensor with a retaining wall.

[0017] Figure 9 is a top view of the MEMS force sensor with a retaining wall.

[0018] Figure 10 is an isometric view of the MEMS force sensor with a retaining wall and corner flexures.

[0019] Figure 11 is a top view of the MEMS force sensor with a retaining wall and corner flexures.

[0020] Figure 12 is an isometric view of the MEMS force sensor according to another exemplary embodiment.

[0021] Figure 13 is a top view of the MEMS force sensor according to another exemplary embodiment.

[0022] Figure 14 is a side view of the MEMS force sensor according to another exemplary embodiment.

[0023] Figure 15 is a bottom view of the MEMS force sensor according to another exemplary embodiment.

[0024] Figure 16 is an isometric bottom view of the MEMS force sensor according to another exemplary embodiment.

DETAILED DESCRIPTION

[0025] The present invention can be understood more readily by reference to the following detailed description, examples, drawings, and their previous and following description. However, before the present devices, systems, and/or methods are disclosed and described, it is to be understood that this invention is not limited to the specific devices, systems, and/or methods disclosed unless otherwise specified, and, as such, can, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting.

[0026] The following description of the invention is provided as an enabling teaching of the invention in its best, currently known embodiment. To this end, those skilled in the relevant art will recognize and appreciate that many changes can be made to the various aspects of the invention described herein, while still obtaining the beneficial results of the present invention. It will also be apparent that some of the desired benefits of the present invention can be obtained by selecting some of the features of the present invention without utilizing other features. Accordingly, those who work in the art will recognize that many modifications and adaptations to the present invention are possible and can even be desirable in certain circumstances and are a part of the present invention. Thus, the following description is provided as illustrative of the principles of the present invention and not in limitation thereof.

[0027] As used throughout, the singular forms "a," "an" and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a force sensor" can include two or more such force sensors unless the context indicates otherwise. [0028] Ranges can be expressed herein as from "about" one particular value, and/or to "about" another particular value. When such a range is expressed, another aspect includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent "about," it will be understood that the particular value forms another aspect. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.

[0029] As used herein, the terms "optional" or "optionally" mean that the subsequently described event or circumstance may or may not occur, and that the description includes instances where said event or circumstance occurs and instances where it does not.

[0030] The present invention relates to a microelectromechanical system ("MEMS") force sensor device for measuring a force applied to at least a portion thereof. In one aspect, as depicted in Figures 1-3, the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 in the base 11. A contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 to at least one flexure 15. The base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.

[0031] It is contemplated that the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device. To mitigate this effect, the base comprises a shelf 17 that is etched significantly below the air gap 16. The shelf 17 creates a distance between the dicing interface at the edge of the base 11 and the air gap 16 where debris will tend to collect, creating a channel for water to carry away debris and preventing mechanical interference with the functional range of the device.

[0032] Referring now to Figures 3 and 4, the side and bottom views of the device are shown, respectively. The force sensor device comprises at least one deposited or implanted piezoresistive element on the bottom surface 18 of the base 11. As strain is induced in the at least one flexure 15 proportional to the force F, a localized strain is produced on the piezoresistive elements 19 (depicted schematically), such that the piezoresistive elements 19 experience compression, depending on their specific orientation. As the piezoresistive elements compress and tense, their resistivity changes in opposite fashion, such that a Wheatstone bridge circuit containing four piezoresistive elements 19 (two of each orientation relative to strain) becomes unbalanced and produces a differential voltage across the positive signal terminal SPOS and the negative signal terminal SNEG. This differential voltage is directly proportional to the applied force F on the contact surface 14, and is measured through electrical terminals 20 that are connected to external circuitry.

[0033] Referring now to Figure 5, the top view of an undiced section of a wafer is shown. The wafer section comprises two dicing lanes 21 to separate a 2x2 array of devices. The at least one rigid boss are supported on two sides by bridges 22 which prevent the at least one flexure 15 from bending under the pressure of the bonding process that attaches the base 11 to the cap 12. Without the bridges 22, the at least one rigid boss 13 would only be supported by the at least one flexure 15. This would deform under pressure, causing the air gap 16 to close and resulting in the cap 12 bonding to the entire base 11, effectively eliminating the functional range of the device. The bridges 22 are placed in the dicing lanes 21 such that they will be removed during dicing to release the at least one rigid boss 13 and allow it to move with applied force F.

[0034] Referring still to Figure 5, the wafer section comprises etched holes 23 at the edges of the at least one flexure 15. The holes 23 are etched into the base prior to dicing such that when the wafer is diced, the blade does not come into contact with the at least one flexure 15. This technique allows for smooth surface edges to be achieved by etching processes, which in turn increases the at least one flexure's 15 yield strength.

[0035] Referring now to Figures 6 and 7, in another embodiment, the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 in the base 11. A contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 to at least one flexure 15. The base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.

[0036] It is contemplated that the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device. To mitigate this effect, the cap comprises quarter circle machined holes 24. The holes 24 create a distance between the dicing interface at the edge of the base 11 and the air gap 16 where debris will tend to collect, creating a channel for water to carry away debris and preventing mechanical interference with the functional range of the device.

[0037] Referring now to Figures 8 and 9, in yet another embodiment, the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid boss 13 and retaining wall 25 in the base 11. A contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid boss 13 and retaining wall 25 to at least one flexure 15. The base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.

[0038] It is contemplated that the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device. To mitigate this effect, the base comprises a retaining wall 25. The retaining wall 25 is released and allowed to move with respect to the rest of the base 11 due to slots 26 etched through the base. The cap 12 and the base 11 are sealed together at the retaining wall 25 in order to prevent debris from entering the air gap 16 during dicing.

[0039] Referring now to Figures 10 and 11 , in yet another embodiment, the force sensor device comprises a base 11 and a cap 12 adhered at the surfaces formed by at least one rigid corner 27 and retaining wall 25 in the base 11. A contact surface 14 exists along the top surface of the cap 12 for receiving an applied force F and transmitting the force F through the at least one rigid corner 27 and retaining wall 25 to at least one flexure 15. The base 11 comprises an air gap 16 between the base 11 and cap 12 wherein the thickness of the air gap 16 is determined by the breaking deflection of the at least one flexure 15, such that the air gap 16 between the base 11 and the cap 12 will close and stop further deflection before the at least one flexible membrane 15 is broken.

[0040] It is contemplated that the air gap 16 formed between the base 11 and cap 12 could collect debris during the process of dicing the device. To mitigate this effect, the base comprises a retaining wall 25. The retaining wall 25 is released and allowed to move with respect to the rest of the base 11 due to slots 26 etched through the base. The cap 12 and the base 11 are sealed together at the retaining wall 25 in order to prevent debris from entering the air gap 16 during dicing.

[0041] Fig. 12 illustrates an isometric view of the MEMS force sensor according to another exemplary embodiment. In particular, Fig. 12 illustrates a microelectromechanical system ("MEMS") force sensor device 110 for measuring a force applied to at least a portion thereof. In one aspect, as depicted in Figures 12-14, the force sensor device includes a base 111 and a cap 112 adhered at the surfaces formed by at least one rigid boss 113 and an outer wall 114 in the base 111. The surfaces adhered between the base 111 and the cap 112 form a sealed cavity 115. A contact surface 116 exists along the top surface of the cap 112 for receiving an applied force F and transmitting the force F through the at least one rigid boss 113 and outer wall 114 to at least one flexure 117. The sealed cavity 115 may include an air gap 118 between the base 111 and cap 112 wherein the thickness of the air gap 118 may be determined by the breaking deflection of the at least one flexure 117, such that the air gap 118 between the base 111 and the cap 112 will close and stop further deflection before the at least one flexure 117 is broken.

[0042] Referring now to Figures 14 and 15, the side and bottom views of the device are shown, respectively. The force sensor device includes at least one deposited or implanted piezoresistive element on the bottom surface 119 of the base 111. As strain is induced in the at least one flexure 117 proportional to the force F, a localized strain is produced on the piezoresistive elements 120 (depicted schematically), such that the piezoresistive elements 120 experience compression, depending on their specific orientation. As the piezoresistive elements compress and tense, their resistivity changes in opposite fashion, such that a Wheatstone bridge circuit containing four piezoresistive elements 120 (two of each orientation relative to strain) becomes unbalanced and produces a differential voltage across the positive signal terminal SPOS and the negative signal terminal SNEG. This differential voltage is directly proportional to the applied force F on the contact surface 116, and may be measured through electrical terminals 121 that are connected to external circuitry. The electrical terminals 121 may comprise solder bumps to allow flip-chip assembly.

[0043] Referring now to Figure 16, an isometric view of the bottom of the device is shown. The force sensor device may include grooves 122 sculptured into the bottom surface of the base 111. The grooves 122 may serve to reduce the amount of force absorbed by the peripheral flexures around the outer electrical terminals 121 and increase the amount of force absorbed by one or more center flexures, thereby increasing the strain in the piezoresistive elements 120 and improving overall sensitivity of the force sensor device.

Claims

1. A force sensor, comprising: a cap wherein the cap is attached to the base at the surface defined by at least one rigid boss, wherein at least one flexure is formed in the base and around the at least one rigid boss by etching, wherein a portion of the base is etched to produce an overload stop between the base and the cap such that the flexures will not deform beyond their breaking point, wherein piezoresistors are deposited or implanted on the bottom surface of the base beneath the flexures to create a Wheatstone bridge, and arranged such that the Wheatstone bridge will output a voltage signal proportional to the strain induced in the piezoresistors. 2. The force sensor from Claim 1 , comprising: an etched shelf around the perimeter of the base to serve as a channel for extraction of debris during wafer dicing. 3. The force sensor from Claim 1, comprising: machined holes in the cap to serve as a channel for extraction of debris during wafer dicing. 4. The force sensor from Claim 1, comprising: a retaining wall around the periphery of the base released by slots etched into the base. 5. The force sensor from Claim 1, comprising: wherein at least one flexure is formed in the corners of the base. A wafer section of force sensors from Claim 1 , comprising: bridges to secure the bosses during attachment of the cap to the base and positioned to be removed during dicing.

7. A wafer section of force sensors from Claim 1 , comprising: etched holes at the edges of the flexures, such that a dicing blade will not come into contact with the flexures.

8. A force sensor, comprising: a cap attached to a base at the surface defined by at least one rigid boss and an outer wall, forming a sealed cavity, at least one flexure formed in the base and around the at least one rigid boss to convert force applied to the cap into strain, a gap between the base and the cap that narrows with the application of force to the cap such that the flexures will not deform beyond their breaking point, a means to sense strain on the bottom surface of the base.

9. The force sensor of claim 8, wherein the flexure is formed in the base and around the at least one rigid boss by etching.

10. The force sensor of claim 8, wherein the means to sense strain consist of piezoresistive, piezoelectric, or capacitive transducers.

11. The force sensor of claim 8, wherein the means to sense strain produce an electrical voltage, current, or charge signal proportional to the strain.

12. The force sensor of claim 8, wherein the electrical signal produced by the means to sense strain are routed to electrical terminals on the bottom surface of the base.

13. The force sensor of claim 8, wherein the electrical terminals on the bottom surface of the base consist of solder bumps.

14. The force sensor of claim 8, wherein the base has grooves to focus mechanical strain on one or more center flexure.

PCT/US2015/011144 2014-01-13 2015-01-13 Miniaturized and ruggedized wafer level mems force sensors WO2015106246A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201580004398.9A CN105934661B (en) 2014-01-13 2015-01-13 Miniature reinforcing wafer-level MEMS force snesor
EP15735327.7A EP3094950B1 (en) 2014-01-13 2015-01-13 Miniaturized and ruggedized wafer level mems force sensors
US15/111,044 US9902611B2 (en) 2014-01-13 2015-01-13 Miniaturized and ruggedized wafer level MEMs force sensors
US15/904,631 US20180179050A1 (en) 2014-01-13 2018-02-26 Miniaturized and ruggedized wafer level mems force sensors
US16/254,968 US20200024126A1 (en) 2014-01-13 2019-01-23 Miniaturized and ruggedized wafer level mems force sensors

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201461926472P 2014-01-13 2014-01-13
US61/926,472 2014-01-13
US201461937509P 2014-02-08 2014-02-08
US61/937,509 2014-02-08
US201461983553P 2014-04-24 2014-04-24
US61/983,553 2014-04-24
US201462004264P 2014-05-29 2014-05-29
US62/004,264 2014-05-29

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/111,044 A-371-Of-International US9902611B2 (en) 2014-01-13 2015-01-13 Miniaturized and ruggedized wafer level MEMs force sensors
US15/904,631 Division US20180179050A1 (en) 2014-01-13 2018-02-26 Miniaturized and ruggedized wafer level mems force sensors

Publications (1)

Publication Number Publication Date
WO2015106246A1 true WO2015106246A1 (en) 2015-07-16

Family

ID=53524414

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/011144 WO2015106246A1 (en) 2014-01-13 2015-01-13 Miniaturized and ruggedized wafer level mems force sensors

Country Status (4)

Country Link
US (3) US9902611B2 (en)
EP (1) EP3094950B1 (en)
CN (1) CN105934661B (en)
WO (1) WO2015106246A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3655740A4 (en) * 2017-07-19 2021-07-14 Nextinput, Inc. Strain transfer stacking in a mems force sensor
US11255737B2 (en) 2017-02-09 2022-02-22 Nextinput, Inc. Integrated digital force sensors and related methods of manufacture
US11423686B2 (en) 2017-07-25 2022-08-23 Qorvo Us, Inc. Integrated fingerprint and force sensor
US11579028B2 (en) 2017-10-17 2023-02-14 Nextinput, Inc. Temperature coefficient of offset compensation for force sensor and strain gauge
US11604104B2 (en) 2017-02-09 2023-03-14 Qorvo Us, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
US11609131B2 (en) 2017-07-27 2023-03-21 Qorvo Us, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US11874185B2 (en) 2017-11-16 2024-01-16 Nextinput, Inc. Force attenuator for force sensor

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9964460B2 (en) * 2014-02-24 2018-05-08 Kulite Semiconductor Products, Inc. Pressure sensor having a front seal
CN107848788B (en) 2015-06-10 2023-11-24 触控解决方案股份有限公司 Reinforced wafer level MEMS force sensor with tolerance trenches
EP3446200B1 (en) 2016-04-20 2023-05-31 Nextinput, Inc. Force-sensitive electronic device
US10203258B2 (en) * 2016-09-26 2019-02-12 Rosemount Inc. Pressure sensor diaphragm with overpressure protection
WO2019090057A1 (en) 2017-11-02 2019-05-09 Nextinput, Inc. Sealed force sensor with etch stop layer
US10962427B2 (en) 2019-01-10 2021-03-30 Nextinput, Inc. Slotted MEMS force sensor
CN114829947A (en) 2019-05-30 2022-07-29 触控解决方案股份有限公司 System and method for continuous mode force testing
US11175192B2 (en) 2019-09-20 2021-11-16 Measurement Specialties, Inc. Sensor assembly having an overload stop
CN114930138B (en) * 2019-12-20 2024-08-16 阿尔卑斯阿尔派株式会社 Force sensor
US11911904B2 (en) 2020-07-15 2024-02-27 Micron Technology, Inc. Apparatus and methods for enhanced microelectronic device handling
US20230127077A1 (en) * 2021-10-08 2023-04-27 Qorvo Us, Inc. Input structures for strain detection

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004113859A1 (en) * 2003-06-18 2004-12-29 Honeywell International Inc. Pressure sensor apparatus and method
US20050190152A1 (en) 2003-12-29 2005-09-01 Vladimir Vaganov Three-dimensional analog input control device
US20060272413A1 (en) 2005-06-04 2006-12-07 Vladimir Vaganov Three-axis integrated mems accelerometer
US20070277616A1 (en) * 2006-06-05 2007-12-06 Nikkel Eric L Micro Electrical Mechanical Systems Pressure Sensor
US20120144921A1 (en) * 2010-12-10 2012-06-14 Honeywell International Inc. Increased sensor die adhesion
US20120286379A1 (en) 2011-05-09 2012-11-15 Mitsubishi Electric Corporation Sensor element
US20130341742A1 (en) * 2012-06-21 2013-12-26 Nextinput, Inc. Wafer level mems force dies
US20140007705A1 (en) 2012-07-05 2014-01-09 Nextinput, Inc. Microelectromechanical load sensor and methods of manufacturing the same

Family Cites Families (304)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI69211C (en) * 1984-02-21 1985-12-10 Vaisala Oy CAPACITIVE STYCLE
US4658651A (en) * 1985-05-13 1987-04-21 Transamerica Delaval Inc. Wheatstone bridge-type transducers with reduced thermal shift
US4849730A (en) * 1986-02-14 1989-07-18 Ricoh Company, Ltd. Force detecting device
US4814856A (en) 1986-05-07 1989-03-21 Kulite Semiconductor Products, Inc. Integral transducer structures employing high conductivity surface features
US4914624A (en) 1988-05-06 1990-04-03 Dunthorn David I Virtual button for touch screen
US5320705A (en) 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
US4918262A (en) 1989-03-14 1990-04-17 Ibm Corporation Touch sensing display screen signal processing apparatus and method
US4933660A (en) 1989-10-27 1990-06-12 Elographics, Inc. Touch sensor with touch pressure capability
US4983786A (en) 1990-01-17 1991-01-08 The University Of British Columbia XY velocity controller
GB9008946D0 (en) 1990-04-20 1990-06-20 Crosfield Electronics Ltd Image processing apparatus
EP0527775B1 (en) 1990-05-07 1994-08-03 Robert Bosch Gmbh Process for the manufacture of a pressure force sensor
US5159159A (en) 1990-12-07 1992-10-27 Asher David J Touch sensor and controller
US5969591A (en) * 1991-03-28 1999-10-19 The Foxboro Company Single-sided differential pressure sensor
US5237879A (en) 1991-10-11 1993-08-24 At&T Bell Laboratories Apparatus for dynamically varying the resolution of a tactile sensor array
DE4137624A1 (en) 1991-11-15 1993-05-19 Bosch Gmbh Robert SILICON CHIP FOR USE IN A FORCE SENSOR
US5333505A (en) 1992-01-13 1994-08-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same
US6222525B1 (en) 1992-03-05 2001-04-24 Brad A. Armstrong Image controllers with sheet connected sensors
US5673066A (en) 1992-04-21 1997-09-30 Alps Electric Co., Ltd. Coordinate input device
US5889236A (en) 1992-06-08 1999-03-30 Synaptics Incorporated Pressure sensitive scrollbar feature
US5880411A (en) 1992-06-08 1999-03-09 Synaptics, Incorporated Object position detector with edge motion feature and gesture recognition
US6028271A (en) 1992-06-08 2000-02-22 Synaptics, Inc. Object position detector with edge motion feature and gesture recognition
US5543591A (en) 1992-06-08 1996-08-06 Synaptics, Incorporated Object position detector with edge motion feature and gesture recognition
KR940001227A (en) 1992-06-15 1994-01-11 에프. 제이. 스미트 Touch screen devices
US5351550A (en) 1992-10-16 1994-10-04 Honeywell Inc. Pressure sensor adapted for use with a component carrier
US5565657A (en) 1993-11-01 1996-10-15 Xerox Corporation Multidimensional user interface input device
US5510812A (en) 1994-04-22 1996-04-23 Hasbro, Inc. Piezoresistive input device
US7138984B1 (en) 2001-06-05 2006-11-21 Idc, Llc Directly laminated touch sensitive screen
US5483994A (en) 1995-02-01 1996-01-16 Honeywell, Inc. Pressure transducer with media isolation and negative pressure measuring capability
JP3317084B2 (en) * 1995-03-31 2002-08-19 株式会社豊田中央研究所 Force sensing element and method of manufacturing the same
US7766383B2 (en) 1998-11-17 2010-08-03 Automotive Technologies International, Inc. Vehicular component adjustment system and method
US7973773B2 (en) 1995-06-29 2011-07-05 Pryor Timothy R Multipoint, virtual control, and force based touch screen applications
US6351205B1 (en) 1996-07-05 2002-02-26 Brad A. Armstrong Variable-conductance sensor
US7629969B2 (en) 1996-08-12 2009-12-08 Tyco Electronics Corporation Acoustic condition sensor employing a plurality of mutually non-orthogonal waves
EP0929410B1 (en) 1996-10-03 2001-10-31 I.E.E. International Electronics & Engineering S.à.r.l. Method and device for determining several parameters of a seated person
US6243075B1 (en) 1997-08-29 2001-06-05 Xerox Corporation Graspable device manipulation for controlling a computer display
US9292111B2 (en) 1998-01-26 2016-03-22 Apple Inc. Gesturing with a multipoint sensing device
US6159166A (en) 1998-03-20 2000-12-12 Hypertension Diagnostics, Inc. Sensor and method for sensing arterial pulse pressure
KR100653904B1 (en) 1998-04-24 2006-12-05 니폰샤신인사츠가부시키가이샤 Touch panel device
US6429846B2 (en) 1998-06-23 2002-08-06 Immersion Corporation Haptic feedback for touchpads and other touch controls
US5921896A (en) 1998-09-04 1999-07-13 Boland; Kevin O. Exercise device
JP2002532717A (en) 1998-12-11 2002-10-02 サイミックス テクノロジーズ、インク Sensor array based system and method for rapid material characterization
US6331161B1 (en) 1999-09-10 2001-12-18 Hypertension Diagnostics, Inc Method and apparatus for fabricating a pressure-wave sensor with a leveling support element
US6360598B1 (en) 1999-09-14 2002-03-26 K.K. Holding Ag Biomechanical measuring arrangement
US7138983B2 (en) 2000-01-31 2006-11-21 Canon Kabushiki Kaisha Method and apparatus for detecting and interpreting path of designated position
AU2001245936A1 (en) 2000-03-23 2001-10-03 Cross Match Technologies, Inc. Piezoelectric identification device and applications thereof
US6313731B1 (en) 2000-04-20 2001-11-06 Telefonaktiebolaget L.M. Ericsson Pressure sensitive direction switches
AU2001257329A1 (en) 2000-04-28 2001-11-12 Armed L.L.C. Apparatus and method for mechanical imaging of breast
US6555235B1 (en) 2000-07-06 2003-04-29 3M Innovative Properties Co. Touch screen system
US6879318B1 (en) 2000-10-06 2005-04-12 Industrial Technology Research Institute Touch screen mounting assembly for LCD panel and method for fabrication
US7348964B1 (en) 2001-05-22 2008-03-25 Palm, Inc. Single-piece top surface display layer and integrated front cover for an electronic device
JP2002236542A (en) 2001-02-09 2002-08-23 Sanyo Electric Co Ltd Signal detector
JP3798637B2 (en) 2001-02-21 2006-07-19 インターナショナル・ビジネス・マシーンズ・コーポレーション Touch panel type entry medium device, control method thereof, and program
US6569108B2 (en) 2001-03-28 2003-05-27 Profile, Llc Real time mechanical imaging of the prostate
US6822640B2 (en) 2001-04-10 2004-11-23 Hewlett-Packard Development Company, L.P. Illuminated touch pad
US20020149571A1 (en) 2001-04-13 2002-10-17 Roberts Jerry B. Method and apparatus for force-based touch input
US6801191B2 (en) 2001-04-27 2004-10-05 Matsushita Electric Industrial Co., Ltd. Input device and inputting method with input device
FI117488B (en) 2001-05-16 2006-10-31 Myorigo Sarl Browsing information on screen
US6608618B2 (en) 2001-06-20 2003-08-19 Leapfrog Enterprises, Inc. Interactive apparatus using print media
KR100822185B1 (en) 2001-10-10 2008-04-16 삼성에스디아이 주식회사 Touch panel
JP3798287B2 (en) 2001-10-10 2006-07-19 Ｓｍｋ株式会社 Touch panel input device
KR101342812B1 (en) 2001-11-01 2013-12-17 임머숀 코퍼레이션 Method and apparatus for providing tactile sensations
US6995752B2 (en) 2001-11-08 2006-02-07 Koninklijke Philips Electronics N.V. Multi-point touch pad
FI115861B (en) 2001-11-12 2005-07-29 Myorigo Oy Method and apparatus for generating a response
US6915702B2 (en) * 2001-11-22 2005-07-12 Kabushiki Kaisha Toyota Chuo Kenkyusho Piezoresistive transducers
US6888537B2 (en) 2002-02-13 2005-05-03 Siemens Technology-To-Business Center, Llc Configurable industrial input devices that use electrically conductive elastomer
GB2386707B (en) 2002-03-16 2005-11-23 Hewlett Packard Co Display and touch screen
TWI234115B (en) 2002-04-03 2005-06-11 Htc Corp Method and device of setting threshold pressure for touch panel
FI115258B (en) 2002-04-23 2005-03-31 Myorigo Oy Method and electronic device for navigating the graphical user interface
US7425749B2 (en) 2002-04-23 2008-09-16 Sharp Laboratories Of America, Inc. MEMS pixel sensor
US6809280B2 (en) 2002-05-02 2004-10-26 3M Innovative Properties Company Pressure activated switch and touch panel
CA2391745C (en) 2002-06-25 2012-08-14 Albert Mark David Touch screen display using ultra-thin glass laminate
JP4115198B2 (en) 2002-08-02 2008-07-09 株式会社日立製作所 Display device with touch panel
AU2003264456A1 (en) 2002-10-30 2004-05-25 Sony Corporation Input device and process for manufacturing the same, portable electronic apparatus comprising input device
JP4028785B2 (en) 2002-11-05 2007-12-26 株式会社タニタ Load detection unit and electronic scale using the same
US20070155589A1 (en) 2002-12-04 2007-07-05 Philip Feldman Method and Apparatus for Operatively Controlling a Virtual Reality Scenario with an Isometric Exercise System
US6931938B2 (en) 2002-12-16 2005-08-23 Jeffrey G. Knirck Measuring pressure exerted by a rigid surface
US7685538B2 (en) 2003-01-31 2010-03-23 Wacom Co., Ltd. Method of triggering functions in a computer application using a digitizer having a stylus and a digitizer system
AU2003227020A1 (en) 2003-02-27 2004-09-17 Bang And Olufsen A/S Metal structure with translucent region
AU2003901532A0 (en) 2003-04-04 2003-05-01 Evolution Broadcast Pty Limited Broadcast control
EP1656607B1 (en) 2003-07-21 2009-06-17 Polymer Vision Limited Touch sensitive display for a portable device
US7460109B2 (en) 2003-10-20 2008-12-02 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Navigation and fingerprint sensor
US7218313B2 (en) 2003-10-31 2007-05-15 Zeetoo, Inc. Human interface system
US8164573B2 (en) 2003-11-26 2012-04-24 Immersion Corporation Systems and methods for adaptive interpretation of input from a touch-sensitive input device
JP4164676B2 (en) 2003-12-25 2008-10-15 株式会社デンソー Mechanical quantity sensor element structure and manufacturing method thereof
US8350345B2 (en) 2003-12-29 2013-01-08 Vladimir Vaganov Three-dimensional input control device
US7772657B2 (en) 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US7548758B2 (en) 2004-04-02 2009-06-16 Nortel Networks Limited System and method for peer-to-peer communication in cellular systems
FI116165B (en) 2004-05-07 2005-09-30 Myorigo Oy Procedure and arrangement for reinterpreting user input in a mobile device
JP2008508628A (en) 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Pressure-controlled navigation on a touch screen
CN101268436A (en) 2004-08-02 2008-09-17 皇家飞利浦电子股份有限公司 Touch screen slider for setting floating point value
JP2008508629A (en) 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Touch screen with pressure-dependent visual feedback
US7728821B2 (en) 2004-08-06 2010-06-01 Touchtable, Inc. Touch detecting interactive display
US7449758B2 (en) 2004-08-17 2008-11-11 California Institute Of Technology Polymeric piezoresistive sensors
JP4351599B2 (en) 2004-09-03 2009-10-28 パナソニック株式会社 Input device
US7159467B2 (en) 2004-10-18 2007-01-09 Silverbrook Research Pty Ltd Pressure sensor with conductive ceramic membrane
US7324095B2 (en) 2004-11-01 2008-01-29 Hewlett-Packard Development Company, L.P. Pressure-sensitive input device for data processing systems
JP2006134184A (en) 2004-11-08 2006-05-25 Honda Access Corp Remote control switch
US7273979B2 (en) 2004-12-15 2007-09-25 Edward Lee Christensen Wearable sensor matrix system for machine control
US7619616B2 (en) 2004-12-21 2009-11-17 Microsoft Corporation Pressure sensitive controls
EP1707931B1 (en) 2005-03-31 2013-03-27 STMicroelectronics Srl Analog data-input device provided with a microelectromechanical pressure sensor
US20060244733A1 (en) 2005-04-28 2006-11-02 Geaghan Bernard O Touch sensitive device and method using pre-touch information
JP2006345209A (en) 2005-06-08 2006-12-21 Sony Corp Input device, information processing apparatus, information processing method, and program
US20060284856A1 (en) 2005-06-10 2006-12-21 Soss David A Sensor signal conditioning in a force-based touch device
US7337085B2 (en) 2005-06-10 2008-02-26 Qsi Corporation Sensor baseline compensation in a force-based touch device
US7903090B2 (en) 2005-06-10 2011-03-08 Qsi Corporation Force-based input device
US20070035525A1 (en) 2005-08-11 2007-02-15 Via Technologies, Inc. Integrated touch screen control system for automobiles
US7928967B2 (en) 2005-08-19 2011-04-19 Silverbrook Research Pty Ltd Force sensor with angled coupling
US8081165B2 (en) 2005-08-30 2011-12-20 Jesterrad, Inc. Multi-functional navigational device and method
US7303935B2 (en) 2005-09-08 2007-12-04 Teledyne Licensing, Llc High temperature microelectromechanical (MEM) devices and fabrication method
US20070070046A1 (en) 2005-09-21 2007-03-29 Leonid Sheynblat Sensor-based touchscreen assembly, handheld portable electronic device having assembly, and method of determining touch location on a display panel
KR101226440B1 (en) 2005-09-26 2013-01-28 삼성디스플레이 주식회사 Display panel and display device having the same and method of detecting touch position of the display device
US7280097B2 (en) 2005-10-11 2007-10-09 Zeetoo, Inc. Human interface input acceleration system
US7649522B2 (en) 2005-10-11 2010-01-19 Fish & Richardson P.C. Human interface input acceleration system
US20070085837A1 (en) 2005-10-17 2007-04-19 Eastman Kodak Company Touch input device with display front
KR101244300B1 (en) 2005-10-31 2013-03-18 삼성전자주식회사 Apparatus and method for send recognition handwriting data in mobile communication terminal
US9001045B2 (en) 2005-11-08 2015-04-07 Nokia Corporation Cost efficient element for combined piezo sensor and actuator in robust and small touch screen realization and method for operation thereof
EP1788473A1 (en) 2005-11-18 2007-05-23 Siemens Aktiengesellschaft input device
US20070115265A1 (en) 2005-11-21 2007-05-24 Nokia Corporation Mobile device and method
CN1979371B (en) 2005-12-10 2010-11-10 鸿富锦精密工业（深圳）有限公司 Input device with locking function and locking method
US20070137901A1 (en) 2005-12-16 2007-06-21 E-Lead Electronic Co., Ltd. Micro-keyboard simulator
US20070152959A1 (en) 2005-12-29 2007-07-05 Sap Ag Pressure-sensitive button
JP4799237B2 (en) 2006-03-27 2011-10-26 三洋電機株式会社 Displacement detection sensor, displacement detection device, and terminal device
US20070235231A1 (en) 2006-03-29 2007-10-11 Tekscan, Inc. Control circuit for sensor array and related methods
US8497757B2 (en) * 2006-04-26 2013-07-30 Kulite Semiconductor Products, Inc. Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers
US7426873B1 (en) 2006-05-04 2008-09-23 Sandia Corporation Micro electro-mechanical system (MEMS) pressure sensor for footwear
EP2020025A4 (en) 2006-05-22 2011-08-24 Vladimir Vaganov Semiconductor input control device
US7791151B2 (en) 2006-05-24 2010-09-07 Vladimir Vaganov Force input control device and method of fabrication
US8237537B2 (en) 2006-06-15 2012-08-07 Kulite Semiconductor Products, Inc. Corrosion-resistant high temperature pressure transducer employing a metal diaphragm
US8269725B2 (en) 2006-06-28 2012-09-18 Microsoft Corporation Input simulation system for touch based devices
FR2903207B1 (en) 2006-06-28 2008-11-07 Jazzmutant Soc Par Actions Sim MULTIPOINT TOUCH SENSOR WITH ACTIVE MATRIX
US20080007532A1 (en) 2006-07-05 2008-01-10 E-Lead Electronic Co., Ltd. Touch-sensitive pad capable of detecting depressing pressure
US7969418B2 (en) 2006-11-30 2011-06-28 Cherif Atia Algreatly 3-D computer input device and method
US20080024454A1 (en) 2006-07-31 2008-01-31 Paul Everest Three-dimensional touch pad input device
JP2008033739A (en) 2006-07-31 2008-02-14 Sony Corp Touch screen interaction method and apparatus based on tactile force feedback and pressure measurement
JP2009545817A (en) 2006-07-31 2009-12-24 キュー・エス・アイ・コーポレーション Pressure-sensitive input device with raised contact surface
JP5243704B2 (en) 2006-08-24 2013-07-24 本田技研工業株式会社 Force sensor
KR20090077755A (en) 2006-09-09 2009-07-15 에프-오리진, 인크. Integrated Pressure Sensing Lens Assembly
US20080088600A1 (en) 2006-10-11 2008-04-17 Apple Inc. Method and apparatus for implementing multiple push buttons in a user input device
US20080106523A1 (en) 2006-11-07 2008-05-08 Conrad Richard H Ergonomic lift-clicking method and apparatus for actuating home switches on computer input devices
US7503221B2 (en) * 2006-11-08 2009-03-17 Honeywell International Inc. Dual span absolute pressure sense die
JP2008158909A (en) 2006-12-25 2008-07-10 Pro Tech Design Corp Tactile feedback controller
US10437459B2 (en) 2007-01-07 2019-10-08 Apple Inc. Multitouch data fusion
JP4345820B2 (en) 2007-01-22 2009-10-14 セイコーエプソン株式会社 Display device, display device manufacturing method, and electronic paper
KR100891099B1 (en) 2007-01-25 2009-03-31 삼성전자주식회사 How to improve usability on touch screens and touch screens
DE102008000128B4 (en) 2007-01-30 2013-01-03 Denso Corporation Semiconductor sensor device and its manufacturing method
US8269729B2 (en) 2007-01-31 2012-09-18 Perceptive Pixel Inc. Methods of interfacing with multi-point input devices and multi-point input systems employing interfacing techniques
EP2120136A4 (en) 2007-03-01 2013-01-23 Sharp Kk Display panel substrate, display panel, display device and method for manufacturing display panel substrate
KR101359921B1 (en) 2007-03-02 2014-02-07 삼성디스플레이 주식회사 Display device
WO2008110227A1 (en) 2007-03-14 2008-09-18 Axsionics Ag Pressure measurement device and corresponding method
US20080238884A1 (en) 2007-03-29 2008-10-02 Divyasimha Harish Edge sensors forming a touchscreen
US20080259046A1 (en) 2007-04-05 2008-10-23 Joseph Carsanaro Pressure sensitive touch pad with virtual programmable buttons for launching utility applications
US7973778B2 (en) 2007-04-16 2011-07-05 Microsoft Corporation Visual simulation of touch pressure
US8120586B2 (en) 2007-05-15 2012-02-21 Htc Corporation Electronic devices with touch-sensitive navigational mechanisms, and associated methods
JP2008305174A (en) 2007-06-07 2008-12-18 Sony Corp Information processor, information processing method, and program
JP4368392B2 (en) 2007-06-13 2009-11-18 東海ゴム工業株式会社 Deformation sensor system
KR101382557B1 (en) 2007-06-28 2014-04-08 삼성디스플레이 주식회사 Display apparatus
FR2918747A1 (en) 2007-07-12 2009-01-16 St Microelectronics Sa PRESSURE MICROSCAPTER
KR101395780B1 (en) 2007-07-27 2014-05-16 삼성전자주식회사 Pressure sensor arrary apparatus and method for tactility
US20090046110A1 (en) 2007-08-16 2009-02-19 Motorola, Inc. Method and apparatus for manipulating a displayed image
KR101386958B1 (en) 2007-08-21 2014-04-18 삼성디스플레이 주식회사 Method for discerning touch points and touch panel for carrying out the method
US8026906B2 (en) 2007-09-07 2011-09-27 F-Origin, Inc. Integrated force sensitive lens and software
US8098235B2 (en) 2007-09-28 2012-01-17 Immersion Corporation Multi-touch device having dynamic haptic effects
TWI352923B (en) 2007-09-29 2011-11-21 Htc Corp Method for determing pressed location of touch scr
US20090102805A1 (en) 2007-10-18 2009-04-23 Microsoft Corporation Three-dimensional object simulation using audio, visual, and tactile feedback
DE102007052008A1 (en) 2007-10-26 2009-04-30 Andreas Steinhauser Single- or multitouch-capable touchscreen or touchpad consisting of an array of pressure sensors and production of such sensors
WO2009067013A1 (en) 2007-11-23 2009-05-28 Polymer Vision Limited An electronic apparatus with improved functionality
US20090140985A1 (en) 2007-11-30 2009-06-04 Eric Liu Computing device that determines and uses applied pressure from user interaction with an input interface
US8803797B2 (en) 2008-01-18 2014-08-12 Microsoft Corporation Input through sensing of user-applied forces
US8004501B2 (en) 2008-01-21 2011-08-23 Sony Computer Entertainment America Llc Hand-held device with touchscreen and digital tactile pixels
US20090184936A1 (en) 2008-01-22 2009-07-23 Mathematical Inventing - Slicon Valley 3D touchpad
US20100127140A1 (en) 2008-01-23 2010-05-27 Gary Smith Suspension for a pressure sensitive touch display or panel
CN102124424A (en) 2008-01-31 2011-07-13 安普赛德股份有限公司 Data input device, data input method, data input program, and recording medium containing the program
US8022933B2 (en) 2008-02-21 2011-09-20 Sony Corporation One button remote control with haptic feedback
EP2247998B1 (en) 2008-02-28 2019-04-10 New York University Method and apparatus for providing input to a processor, and a sensor pad
US9018030B2 (en) 2008-03-20 2015-04-28 Symbol Technologies, Inc. Transparent force sensor and method of fabrication
US20090237374A1 (en) 2008-03-20 2009-09-24 Motorola, Inc. Transparent pressure sensor and method for using
BRPI0910042A8 (en) 2008-03-27 2017-05-09 Cryptera As SECURE NUMERIC KEYPAD SYSTEM
US20090243998A1 (en) 2008-03-28 2009-10-01 Nokia Corporation Apparatus, method and computer program product for providing an input gesture indicator
US8169332B2 (en) 2008-03-30 2012-05-01 Pressure Profile Systems Corporation Tactile device with force sensitive touch input surface
KR101032632B1 (en) 2008-04-01 2011-05-06 한국표준과학연구원 Method of providing user interface and recording medium according to the action force
WO2009121227A1 (en) 2008-04-03 2009-10-08 Dong Li Method and apparatus for operating multi-object touch handheld device with touch sensitive display
US20090256807A1 (en) 2008-04-14 2009-10-15 Nokia Corporation User interface
US8384677B2 (en) 2008-04-25 2013-02-26 Research In Motion Limited Electronic device including touch-sensitive input surface and method of determining user-selected input
US8476809B2 (en) * 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US7765880B2 (en) 2008-05-19 2010-08-03 Hong Kong Polytechnic University Flexible piezoresistive interfacial shear and normal force sensor and sensor array
TW200951597A (en) 2008-06-10 2009-12-16 Ind Tech Res Inst Functional device array with self-aligned electrode structures and fabrication methods thereof
TW200951793A (en) 2008-06-13 2009-12-16 Asustek Comp Inc Touch panel device and control method thereof
US8130207B2 (en) 2008-06-18 2012-03-06 Nokia Corporation Apparatus, method and computer program product for manipulating a device using dual side input devices
JP5106268B2 (en) 2008-06-24 2012-12-26 富士通コンポーネント株式会社 Touch panel
JP4885911B2 (en) 2008-06-27 2012-02-29 京セラ株式会社 Mobile device
KR101522974B1 (en) 2008-07-22 2015-05-27 삼성전자주식회사 Content management method and electronic device
US20100220065A1 (en) 2009-02-27 2010-09-02 Research In Motion Limited Touch-sensitive display including a force-sensor and portable electronic device including same
JP5100556B2 (en) 2008-07-30 2012-12-19 キヤノン株式会社 Information processing method and apparatus
TWI381294B (en) 2008-08-15 2013-01-01 Au Optronics Corp Touch sensing apparatus and sensing signal processing method thereof
TWI366784B (en) 2008-08-21 2012-06-21 Au Optronics Corp Matrix sensing apparatus
US20100053087A1 (en) 2008-08-26 2010-03-04 Motorola, Inc. Touch sensors with tactile feedback
US9477342B2 (en) 2008-08-26 2016-10-25 Google Technology Holdings LLC Multi-touch force sensing touch-screen devices and methods
US8780054B2 (en) 2008-09-26 2014-07-15 Lg Electronics Inc. Mobile terminal and control method thereof
CN101685212B (en) 2008-09-26 2012-08-29 群康科技(深圳)有限公司 Liquid crystal display panel
KR20100036850A (en) 2008-09-30 2010-04-08 삼성전기주식회사 Touch panel apparatus using tactile sensor
TWI372994B (en) 2008-10-21 2012-09-21 Altek Corp Pressure detection module, and touch panel with pressure detection module
JP4766101B2 (en) 2008-11-10 2011-09-07 ソニー株式会社 Tactile behavior recognition device, tactile behavior recognition method, information processing device, and computer program
TWI383312B (en) 2008-11-13 2013-01-21 Orise Technology Co Ltd Method for detecting touch point and touch panel using the same
CN101738768B (en) 2008-11-18 2012-12-19 深圳富泰宏精密工业有限公司 Touch screen and manufacturing method thereof
US20100123686A1 (en) 2008-11-19 2010-05-20 Sony Ericsson Mobile Communications Ab Piezoresistive force sensor integrated in a display
WO2010062901A1 (en) 2008-11-26 2010-06-03 Research In Motion Limited Touch-sensitive display method and apparatus
TWI376624B (en) 2008-12-23 2012-11-11 Integrated Digital Tech Inc Force-sensing modules for light sensitive screens
US8427441B2 (en) 2008-12-23 2013-04-23 Research In Motion Limited Portable electronic device and method of control
TWI478016B (en) 2008-12-24 2015-03-21 Prime View Int Co Ltd Display device with touch panel and fabricating method thereof
US9864513B2 (en) 2008-12-26 2018-01-09 Hewlett-Packard Development Company, L.P. Rendering a virtual input device upon detection of a finger movement across a touch-sensitive display
US8289288B2 (en) 2009-01-15 2012-10-16 Microsoft Corporation Virtual object adjustment via physical object detection
KR101637879B1 (en) 2009-02-06 2016-07-08 엘지전자 주식회사 Mobile terminal and operation method thereof
CN104035630B (en) 2009-04-22 2017-04-12 三菱电机株式会社 Position input apparatus
WO2010122813A1 (en) 2009-04-24 2010-10-28 京セラ株式会社 Input device
US8508498B2 (en) 2009-04-27 2013-08-13 Empire Technology Development Llc Direction and force sensing input device
US8427503B2 (en) 2009-05-18 2013-04-23 Nokia Corporation Method, apparatus and computer program product for creating graphical objects with desired physical features for usage in animation
CN101893977B (en) 2009-05-19 2012-07-25 北京京东方光电科技有限公司 Touch screen, color film base plate and manufacture method thereof
US20120068969A1 (en) 2009-05-29 2012-03-22 Matteo Paolo Bogana Method for determining multiple touch inputs on a resistive touch screen and a multiple touch controller
US9383881B2 (en) 2009-06-03 2016-07-05 Synaptics Incorporated Input device and method with pressure-sensitive layer
US8031518B2 (en) 2009-06-08 2011-10-04 Micron Technology, Inc. Methods, structures, and devices for reducing operational energy in phase change memory
US20120092250A1 (en) 2009-06-14 2012-04-19 Micropointing Ltd. Finger-operated input device
US20100321319A1 (en) 2009-06-17 2010-12-23 Hefti Thierry Method for displaying and updating a view of a graphical scene in response to commands via a touch-sensitive device
KR101071672B1 (en) 2009-06-23 2011-10-11 한국표준과학연구원 Brightness controllable electro luminescence device with tactile sensor sensing intensity of force or intensity of pressure, flat panel display having the same, mobile terminal keypad having the same
US8310457B2 (en) 2009-06-30 2012-11-13 Research In Motion Limited Portable electronic device including tactile touch-sensitive input device and method of protecting same
US20100328229A1 (en) 2009-06-30 2010-12-30 Research In Motion Limited Method and apparatus for providing tactile feedback
TWI421741B (en) 2009-07-01 2014-01-01 Au Optronics Corp Touch panel and sensing method thereof
US8638315B2 (en) 2009-07-13 2014-01-28 Cherif Atia Algreatly Virtual touch screen system
US8120588B2 (en) 2009-07-15 2012-02-21 Sony Ericsson Mobile Communications Ab Sensor assembly and display including a sensor assembly
US8289290B2 (en) 2009-07-20 2012-10-16 Sony Ericsson Mobile Communications Ab Touch sensing apparatus for a mobile device, mobile device and method for touch operation sensing
US8378798B2 (en) 2009-07-24 2013-02-19 Research In Motion Limited Method and apparatus for a touch-sensitive display
JP2011028635A (en) 2009-07-28 2011-02-10 Sony Corp Display control apparatus, display control method and computer program
US20110039602A1 (en) 2009-08-13 2011-02-17 Mcnamara Justin Methods And Systems For Interacting With Content On A Mobile Device
US8072437B2 (en) 2009-08-26 2011-12-06 Global Oled Technology Llc Flexible multitouch electroluminescent display
JP2011048671A (en) 2009-08-27 2011-03-10 Kyocera Corp Input device and control method of input device
JP2011048685A (en) 2009-08-27 2011-03-10 Kyocera Corp Input apparatus
WO2011024434A1 (en) 2009-08-27 2011-03-03 京セラ株式会社 Tactile sensation imparting device and control method of tactile sensation imparting device
JP2011048686A (en) 2009-08-27 2011-03-10 Kyocera Corp Input apparatus
JP2011048606A (en) 2009-08-27 2011-03-10 Kyocera Corp Input device
US8363020B2 (en) 2009-08-27 2013-01-29 Symbol Technologies, Inc. Methods and apparatus for pressure-based manipulation of content on a touch screen
JP2011048696A (en) 2009-08-27 2011-03-10 Kyocera Corp Input device
JP2011048669A (en) 2009-08-27 2011-03-10 Kyocera Corp Input device
JP4672075B2 (en) 2009-08-27 2011-04-20 京セラ株式会社 Input device
JP5482023B2 (en) 2009-08-27 2014-04-23 ソニー株式会社 Information processing apparatus, information processing method, and program
JP5304544B2 (en) 2009-08-28 2013-10-02 ソニー株式会社 Information processing apparatus, information processing method, and program
JP5593655B2 (en) 2009-08-31 2014-09-24 ソニー株式会社 Information processing apparatus, information processing method, and program
JP5182260B2 (en) 2009-09-02 2013-04-17 ソニー株式会社 Operation control device, operation control method, and computer program
JP2011053974A (en) 2009-09-02 2011-03-17 Sony Corp Device and method for controlling operation, and computer program
US8730199B2 (en) 2009-09-04 2014-05-20 Atmel Corporation Capacitive control panel
KR20110028834A (en) 2009-09-14 2011-03-22 삼성전자주식회사 Method and device for providing user interface using touch pressure of mobile terminal with touch screen
US8436806B2 (en) 2009-10-02 2013-05-07 Research In Motion Limited Method of synchronizing data acquisition and a portable electronic device configured to perform the same
US10068728B2 (en) 2009-10-15 2018-09-04 Synaptics Incorporated Touchpad with capacitive force sensing
JP5486271B2 (en) * 2009-11-17 2014-05-07 ラピスセミコンダクタ株式会社 Acceleration sensor and method of manufacturing acceleration sensor
US8387464B2 (en) 2009-11-30 2013-03-05 Freescale Semiconductor, Inc. Laterally integrated MEMS sensor device with multi-stimulus sensing
US8605053B2 (en) 2009-12-02 2013-12-10 Analog Devices, Inc. Method and device for detecting user input
US8633916B2 (en) 2009-12-10 2014-01-21 Apple, Inc. Touch pad with force sensors and actuator feedback
US8570297B2 (en) 2009-12-14 2013-10-29 Synaptics Incorporated System and method for measuring individual force in multi-object sensing
WO2011078043A1 (en) * 2009-12-25 2011-06-30 アルプス電気株式会社 Force sensor and method of manufacturing the same
JP5750875B2 (en) 2010-12-01 2015-07-22 ソニー株式会社 Information processing apparatus, information processing method, and program
US8669963B2 (en) 2010-02-03 2014-03-11 Interlink Electronics, Inc. Sensor system
DE102010002463A1 (en) 2010-03-01 2011-09-01 Robert Bosch Gmbh Micromechanical pressure sensor element and method for its production
DE102010012441B4 (en) 2010-03-23 2015-06-25 Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Technologie, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Millinewton micro force meter and method of making a Millinewton micro force meter
TWI544458B (en) 2010-04-02 2016-08-01 元太科技工業股份有限公司 Display panel
CN201653605U (en) * 2010-04-09 2010-11-24 无锡芯感智半导体有限公司 Silicon-bonding based pressure sensor
US20110267181A1 (en) 2010-04-29 2011-11-03 Nokia Corporation Apparatus and method for providing tactile feedback for user
US20110267294A1 (en) 2010-04-29 2011-11-03 Nokia Corporation Apparatus and method for providing tactile feedback for user
KR101084782B1 (en) 2010-05-06 2011-11-21 삼성전기주식회사 Touch screen device
US8466889B2 (en) 2010-05-14 2013-06-18 Research In Motion Limited Method of providing tactile feedback and electronic device
CN102473074A (en) 2010-05-20 2012-05-23 松下电器产业株式会社 Operation device, operation method, program, recording medium, and integrated circuit
US8669946B2 (en) 2010-05-28 2014-03-11 Blackberry Limited Electronic device including touch-sensitive display and method of controlling same
DE102010033514A1 (en) 2010-08-05 2012-02-09 Gm Global Technology Operations Llc (N.D.Ges.D. Staates Delaware) Operating element for operation by a user and control module
KR101187980B1 (en) 2010-08-13 2012-10-05 삼성전기주식회사 Haptic feedback device and electronic device including the same
JP5625612B2 (en) 2010-08-19 2014-11-19 株式会社リコー Operation display device and operation display method
JP5573487B2 (en) 2010-08-20 2014-08-20 ソニー株式会社 Information processing apparatus, program, and operation control method
US8884910B2 (en) 2010-08-30 2014-11-11 Microsoft Corporation Resistive matrix with optimized input scanning
TWI564757B (en) 2010-08-31 2017-01-01 萬國商業機器公司 Computer device with touch screen, method, and computer readable medium for operating the same
KR101739054B1 (en) 2010-09-08 2017-05-24 삼성전자주식회사 Motion control method and apparatus in a device
TW201214237A (en) 2010-09-16 2012-04-01 Asustek Comp Inc Touch display device and control method thereof
EP2628069B1 (en) 2010-10-12 2020-12-02 New York University Apparatus for sensing utilizing tiles, sensor having a set of plates, object identification for multi-touch surfaces, and method
US8743082B2 (en) 2010-10-18 2014-06-03 Qualcomm Mems Technologies, Inc. Controller architecture for combination touch, handwriting and fingerprint sensor
US20120105367A1 (en) 2010-11-01 2012-05-03 Impress Inc. Methods of using tactile force sensing for intuitive user interface
US9262002B2 (en) 2010-11-03 2016-02-16 Qualcomm Incorporated Force sensing touch screen
US10120446B2 (en) 2010-11-19 2018-11-06 Apple Inc. Haptic input device
US9223445B2 (en) 2010-12-02 2015-12-29 Atmel Corporation Position-sensing and force detection panel
TW201227454A (en) 2010-12-31 2012-07-01 Hong-Da Liu An active array having the touchable sensing matrix unit and a display having the active array
US20120162122A1 (en) 2010-12-27 2012-06-28 3M Innovative Properties Company Force sensitive device with force sensitive resistors
US20120169609A1 (en) 2010-12-29 2012-07-05 Nokia Corporation Methods and apparatuses for facilitating content navigation
US20120169617A1 (en) 2011-01-04 2012-07-05 Nokia Corporation Controlling of user input device
US8297127B2 (en) * 2011-01-07 2012-10-30 Honeywell International Inc. Pressure sensor with low cost packaging
KR20120086055A (en) 2011-01-25 2012-08-02 삼성전기주식회사 Touch screen apparatus detecting pressure of touching and electronic apparatus having thereof
US8674961B2 (en) 2011-01-31 2014-03-18 National Semiconductor Corporation Haptic interface for touch screen in mobile device or other device
US9389721B2 (en) 2011-02-09 2016-07-12 Apple Inc. Snap domes as sensor protection
US9035871B2 (en) 2011-02-11 2015-05-19 Blackberry Limited Input detecting apparatus, and associated method, for electronic device
US8402835B2 (en) 2011-02-16 2013-03-26 Silicon Microstructures, Inc. Compensation of stress effects on pressure sensor components
US20120319987A1 (en) 2011-06-15 2012-12-20 Synaptics Incorporated System and method for calibrating an input device
US8884892B2 (en) 2011-08-12 2014-11-11 Blackberry Limited Portable electronic device and method of controlling same
US8610684B2 (en) 2011-10-14 2013-12-17 Blackberry Limited System and method for controlling an electronic device having a touch-sensitive non-display area
US8436827B1 (en) 2011-11-29 2013-05-07 Google Inc. Disambiguating touch-input based on variation in characteristic such as speed or pressure along a touch-trail
FR2983955B1 (en) * 2011-12-09 2014-10-03 Openfield PRESSURE SENSOR FOR FLUID
JP5177311B1 (en) * 2012-02-15 2013-04-03 オムロン株式会社 Capacitance type sensor and manufacturing method thereof
US9886116B2 (en) 2012-07-26 2018-02-06 Apple Inc. Gesture and touch input detection through force sensing
KR101934310B1 (en) 2012-08-24 2019-01-03 삼성디스플레이 주식회사 touch display apparatus sensing touch force
CN102998037B (en) * 2012-09-15 2014-11-12 华东光电集成器件研究所 Dielectric isolation piezoresistive pressure sensor and method for manufacturing same
US8984951B2 (en) * 2012-09-18 2015-03-24 Kulite Semiconductor Products, Inc. Self-heated pressure sensor assemblies
CN107848788B (en) 2015-06-10 2023-11-24 触控解决方案股份有限公司 Reinforced wafer level MEMS force sensor with tolerance trenches

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004113859A1 (en) * 2003-06-18 2004-12-29 Honeywell International Inc. Pressure sensor apparatus and method
US20050190152A1 (en) 2003-12-29 2005-09-01 Vladimir Vaganov Three-dimensional analog input control device
US20060272413A1 (en) 2005-06-04 2006-12-07 Vladimir Vaganov Three-axis integrated mems accelerometer
US20070277616A1 (en) * 2006-06-05 2007-12-06 Nikkel Eric L Micro Electrical Mechanical Systems Pressure Sensor
US20120144921A1 (en) * 2010-12-10 2012-06-14 Honeywell International Inc. Increased sensor die adhesion
US20120286379A1 (en) 2011-05-09 2012-11-15 Mitsubishi Electric Corporation Sensor element
US20130341742A1 (en) * 2012-06-21 2013-12-26 Nextinput, Inc. Wafer level mems force dies
US20140007705A1 (en) 2012-07-05 2014-01-09 Nextinput, Inc. Microelectromechanical load sensor and methods of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3094950A4

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11808644B2 (en) 2017-02-09 2023-11-07 Qorvo Us, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
US11255737B2 (en) 2017-02-09 2022-02-22 Nextinput, Inc. Integrated digital force sensors and related methods of manufacture
US11946817B2 (en) 2017-02-09 2024-04-02 DecaWave, Ltd. Integrated digital force sensors and related methods of manufacture
US11604104B2 (en) 2017-02-09 2023-03-14 Qorvo Us, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
US11221263B2 (en) 2017-07-19 2022-01-11 Nextinput, Inc. Microelectromechanical force sensor having a strain transfer layer arranged on the sensor die
EP3655740A4 (en) * 2017-07-19 2021-07-14 Nextinput, Inc. Strain transfer stacking in a mems force sensor
US11423686B2 (en) 2017-07-25 2022-08-23 Qorvo Us, Inc. Integrated fingerprint and force sensor
US11609131B2 (en) 2017-07-27 2023-03-21 Qorvo Us, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US11946816B2 (en) 2017-07-27 2024-04-02 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US11898918B2 (en) 2017-10-17 2024-02-13 Nextinput, Inc. Temperature coefficient of offset compensation for force sensor and strain gauge
US11579028B2 (en) 2017-10-17 2023-02-14 Nextinput, Inc. Temperature coefficient of offset compensation for force sensor and strain gauge
US12203819B2 (en) 2017-10-17 2025-01-21 Nextinput, Inc. Temperature coefficient of offset compensation for force sensor and strain gauge
US11874185B2 (en) 2017-11-16 2024-01-16 Nextinput, Inc. Force attenuator for force sensor

Also Published As

Publication number Publication date
EP3094950A1 (en) 2016-11-23
US20200024126A1 (en) 2020-01-23
US9902611B2 (en) 2018-02-27
US20180179050A1 (en) 2018-06-28
CN105934661B (en) 2019-11-05
US20160332866A1 (en) 2016-11-17
EP3094950A4 (en) 2017-09-13
CN105934661A (en) 2016-09-07
EP3094950B1 (en) 2022-12-21

Similar Documents

Publication Publication Date Title
US20200024126A1 (en) 2020-01-23 Miniaturized and ruggedized wafer level mems force sensors
US9493342B2 (en) 2016-11-15 Wafer level MEMS force dies
US10466119B2 (en) 2019-11-05 Ruggedized wafer level MEMS force sensor with a tolerance trench
EP1359402B1 (en) 2014-10-01 Pressure sensor
US7150195B2 (en) 2006-12-19 Sealed capacitive sensor for physical measurements
EP3256831B1 (en) 2019-10-16 Micro mechanical devices with an improved recess or cavity structure
US8375799B2 (en) 2013-02-19 Increased sensor die adhesion
US9321628B2 (en) 2016-04-26 MEMS device incorporating a fluidic path, and manufacturing process thereof
US9651441B2 (en) 2017-05-16 Pressure sensor device with high sensitivity and high accuracy
US7997142B2 (en) 2011-08-16 Low pressure sensor device with high accuracy and high sensitivity
US20090084182A1 (en) 2009-04-02 Micromechanical sensor element
EP3655740A1 (en) 2020-05-27 Strain transfer stacking in a mems force sensor
WO2019079420A1 (en) 2019-04-25 Temperature coefficient of offset compensation for force sensor and strain gauge
US9964458B2 (en) 2018-05-08 Pressure sensor device with anchors for die shrinkage and high sensitivity
WO2015057515A1 (en) 2015-04-23 Microelectromechanical pressure sensors
WO2018048788A1 (en) 2018-03-15 Buried cavity sense die diaphragm stop for force sensors
JP6759454B2 (en) 2020-09-23 High pressure ultra high pressure silicon die pressure sensor

Legal Events

Date Code Title Description
2015-09-02 121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15735327

Country of ref document: EP

Kind code of ref document: A1

2016-07-12 WWE Wipo information: entry into national phase

Ref document number: 15111044

Country of ref document: US

2016-07-13 NENP Non-entry into the national phase

Ref country code: DE

2016-08-09 REEP Request for entry into the european phase

Ref document number: 2015735327

Country of ref document: EP

2016-08-09 WWE Wipo information: entry into national phase

Ref document number: 2015735327

Country of ref document: EP