Srivastava et al., 2023 - Google Patents
- ️Sun Jan 01 2023
Srivastava et al., 2023
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Document ID
- 5041956499544043658 Author
- Rajput A
- Pattanaik M
- Kaushal G Publication year
- 2023 Publication venue
- 2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID)
External Links
Snippet
In-Memory Computing (IMC) is emerging as a new paradigm to address the von Neumann bottleneck (VNB) in data-intensive applications. This research proposes a 10T SRAM-based IMC architecture that is both robustand energy-efficient. The write margin and read margin of …
Classifications
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- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction for memory cells of the field-effect type
- G11C11/419—Read-write circuits
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- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
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- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write (R-W) circuits
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- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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- G06F7/523—Multiplying only
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