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Develops 1Znm 16Gb DDR4 DRAM

Develops World's Fastest High Bandwidth Memory, HBM2E
Unveils "Gold S31" Consumer Solid-State Drive on Amazon

Starts Mass-Producing World's First 128-ayer 4D NAND

Shipped samples of 96-layer 1Tb QLC 4D NAND

Completed expanded fab (C2F) in Wuxi, China

Announced KRW 1.2 trillion support plans for mutual growth at the “Semiconductor Cluster”
Demonstrated industry’s first ZNS-based SSD solution for next-gen data centers

A Special Purpose Company (SPC) submitted an Investment Letter of Intent for a “Semiconductor Cluster” to Yongin city government

Broke ground for M16 at its headquarters in Icheon
Appointed Dr. Seok-hee Lee as the new Chief Executive Officer

Developed 1Ynm 16Gb DDR5 DRAM
Developed 1Ynm 8Gb DDR4 DRAM
Launched the world’s first ‘96-layer CTF-based 4D NAND Flash’

Introduced a new slogan “We Do Technology”
Held a ceremony celebrating the completion of M15 in Cheongju

Announced a construction plan of a new semiconductor fabrication plant in Icheon

Completed procedure to take over Toshiba Memory through consortium between Korea, America and Japan

Completion of Happy More, ‘Subsidiary Standard Workplace for People with Disabilities’

Introduction of outside director system and establishment of continuous management commission within the board of directors

Development of 4^th generation (72 phase) 3D NAND-based 4TByte SATA SSD for business use
Started 4^th generation (72 phase) NAND-based next generation PCIe eSSD customer certification

Operated “SK hynix Industrial Health Advancement Continuation Committee”

Presented construction plan for the Icheon Campus Research and Development Center
Investment decision for Toshiba Memory

Established ‘SK hynix System IC’, which is a subsidiary specializing in foundry

Introduced Industry’s Fastest 8Gb Graphics DRAM(GDDR6)
Introduced Industry’s Highest 72-Layer 3D NAND Flash

Launched the World’s First Highest Density of 8GB LPDDR4X

Announced Construction of a Cutting Edge NAND Flash FAB in Cheongju

Entered into an Agreement with Stanford University to R&D; ‘Artificial Neural Network Devices’
Joined the Nation's First 'Platinum Club' of CDP's the Best Honor

MOU for an Establishment of ‘Subsidiary Typed Standard Workplace’ with KEAD

Launched a Handball Team ‘SK Hawks’

Established M14 Line in Icheon
Expanded IP and Commercial Relationship with SanDisk

Introduced Industry's First Model of Wage Sharing with Biz. Partners

the World’s First Commercialization of 8Gb LPDDR4

Announced All-Time High Financial Results for FY2014

Signed a MOU for Joint Development of Nano Imprint Lithography with Toshiba

Developed the World’s First 16GB NVDIMM

Established a back-end Line in Chongqing, Sichuan Province, China
Listed on the DJSI World for 5 Consecutive Years
Developed the World’s First Wide IO2 Mobile DRAM

Acquired Firmware Division of Softeq Development FLLC.

Acquired PCIe Card Division of Violin Memory

Developed the World's First 128GB DDR4 Module

Developed the World's First 20nm Class LPDDR4
Developed the World's First TSV-based HBM

Established mass production system of 16nm NAND Flash

Developed the World’s First 20nm Class 6Gb LPDDR3

Opened an Integrated Analysis Center

Signed a Cross License Agreement with Samsung Electronics Co.

Signed a Patent License Agreement with Rambus
Developed the World’s First High Density 8Gb LPDDR3

Appointed Dr. Sung Wook Park as the new Chief Executive Officer

Developed Low-Voltage 4Gb Graphics DDR3
Launched the Flash Solution Design Center

Established M12 Line in Cheongju
Launched Client-side SSD
Acquired Link_A_Media Devices
Acquired Ideaflash S.r.l. and Established a Flash R&D Center in Europe
Signed Joint Development for PCRAM with IBM

Signed a Strategic Alliance with Spansion

Changed the Company name to 'SK hynix Inc.'

SK Telecom becomes Hynix’s largest shareholder
Appointed Mr. Tae-won Chey as the new Chairman & Chief Executive Office
Appointed Mr. Sung Min Ha as the Chairman of Board of Directors

SK Telecom Signed the Share Purchase Agreement with the Hynix Share Management Council

Signed Joint Development for MRAM with Toshiba

Appointed Mr. In-Baik Jeon as the Chairman of BOD

Developed 30nm Class 2Gb high performance DDR4 DRAM

Developed 40nm Class 16Gb DDR3 DRAM using TSV technology

Named to Dow Jones Sustainability World Index
Signed a joint development agreement with HP on Next Generation Memory Products, ReRAM

Completed construction of a back-end joint venture, HITECH Semiconductor Package & Test, in China

Appointed Mr. Oh Chul Kwon as the new Chief Executive Officer

Developed 20nm Class 64Gb NAND Flash

Developed the World’s First 40nm Class 2Gb Mobile Low Power DDR2 DRAM